页 485 - Infineon Technologies 产品 | 深圳黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  485/567
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IKQ100N60TAXKSA1
Infineon Technologies

IGBT 600V TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: 714W
  • Switching Energy: 3.1mJ (on), 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 610nC
  • Td (on/off) @ 25°C: 30ns/290ns
  • Test Condition: 400V, 100A, 3.6 Ohm, 15V
  • Reverse Recovery Time (trr): 225ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
封装: TO-247-3
库存2,352
AUIRFR9024N
Infineon Technologies

MOSFET P-CH 55V 11A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,328
AUIRFS4610
Infineon Technologies

MOSFET N-CH 100V 73A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,400
SPI100N03S2-03
Infineon Technologies

MOSFET N-CH 30V 100A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存2,480
IRLR8503TRRPBF
Infineon Technologies

MOSFET N-CH 30V 44A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,104
BCP5216E6327HTSA1
Infineon Technologies

TRANS PNP 60V 1A SOT-223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 125MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
封装: TO-261-4, TO-261AA
库存5,392
BC 817-40W E6327
Infineon Technologies

TRANS NPN 45V 0.5A SOT-323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
  • Power - Max: 250mW
  • Frequency - Transition: 170MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封装: SC-70, SOT-323
库存4,496
IRD3CH9DF6
Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
库存4,816
IRU1010-25CSTR
Infineon Technologies

IC REG LINEAR 2.5V 1A 8SOIC

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 7V
  • Voltage - Output (Min/Fixed): 2.5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.3V @ 1A
  • Current - Output: 1A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: 70dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存2,976
TLE7183QUXUMA1
Infineon Technologies

IC MOTOR CONTROLLER PAR 48TQFP

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushless DC (BLDC)
  • Function: Controller - Commutation, Direction Management
  • Output Configuration: Pre-Driver - Half Bridge (3)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: Automotive
  • Current - Output: -
  • Voltage - Supply: 5.5 V ~ 20 V
  • Voltage - Load: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TQFP Exposed Pad
  • Supplier Device Package: 48-TQFP (7x7)
封装: 48-TQFP Exposed Pad
库存2,864
hot ICE3A2065Z
Infineon Technologies

IC OFFLINE CTRLR SMPS CM 7DIP

  • Output Isolation: Isolated
  • Internal Switch(s): Yes
  • Voltage - Breakdown: 650V
  • Topology: Flyback
  • Voltage - Start Up: 15V
  • Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
  • Duty Cycle: 72%
  • Frequency - Switching: 100kHz
  • Power (Watts): 57W
  • Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
  • Control Features: Soft Start
  • Operating Temperature: -25°C ~ 130°C (TJ)
  • Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
  • Supplier Device Package: PG-DIP-7-1
  • Mounting Type: Through Hole
封装: 8-DIP (0.300", 7.62mm), 7 Leads
库存4,960
TLE8458GV33XUMA1
Infineon Technologies

IC LDO VREG/LIN TXRX 8DSO

  • Type: Transceiver
  • Protocol: LIN
  • Number of Drivers/Receivers: 1/1
  • Duplex: Full
  • Receiver Hysteresis: -
  • Data Rate: 20kbps
  • Voltage - Supply: 7 V ~ 27 V
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,168
XC228796F80LACKXUMA1
Infineon Technologies

IC MCU 16BIT 768KB FLASH 144LQFP

  • Core Processor: C166SV2
  • Core Size: 16/32-Bit
  • Speed: 80MHz
  • Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
  • Peripherals: DMA, I2S, POR, PWM, WDT
  • Number of I/O: 118
  • Program Memory Size: 768KB (768K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 82K x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
  • Data Converters: A/D 24x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 144-LQFP Exposed Pad
  • Supplier Device Package: 144-LQFP (20x20)
封装: 144-LQFP Exposed Pad
库存6,160
hot PVI1050NS-TPBF
Infineon Technologies

OPTOISO 2.5KV 2CH PHVOLT 8-SMT

  • Number of Channels: 2
  • Voltage - Isolation: 2500Vrms
  • Current Transfer Ratio (Min): -
  • Current Transfer Ratio (Max): -
  • Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
  • Rise / Fall Time (Typ): -
  • Input Type: DC
  • Output Type: Photovoltaic
  • Voltage - Output (Max): 5V
  • Current - Output / Channel: 5µA
  • Voltage - Forward (Vf) (Typ): -
  • Current - DC Forward (If) (Max): -
  • Vce Saturation (Max): -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD (4 Leads), Gull Wing
  • Supplier Device Package: 8-SMD
封装: 8-SMD (4 Leads), Gull Wing
库存28,704
40060325
Infineon Technologies

INFINEON

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
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IPC60R160C6UNSAWNX6SA1
Infineon Technologies

MOSFET N-CH BARE DIE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
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CY9AF314NAPMC-G-MNE2
Infineon Technologies

IC MM MCU 100LQFP

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit
  • Speed: 40MHz
  • Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
  • Peripherals: DMA, LVD, POR, PWM, WDT
  • Number of I/O: 83
  • Program Memory Size: 256KB (256K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 32K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 16x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x14)
封装: -
库存2,700
BSM50GP60GBOSA1
Infineon Technologies

IGBT MODULE 600V 70A 250W

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 70 A
  • Power - Max: 250 W
  • Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
  • Current - Collector Cutoff (Max): 500 µA
  • Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
CY8C624ABZI-S2D44T
Infineon Technologies

IC MCU 32BIT 2MB FLASH 124VFBGA

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 150MHz
  • Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
  • Peripherals: Brown-out Detect/Reset, CapSense, I2S, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 100
  • Program Memory Size: 2MB (2M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 1M x 8
  • Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
  • Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 124-VFBGA
  • Supplier Device Package: 124-VFBGA (9x9)
封装: -
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T640N18TOFXPSA1
Infineon Technologies

SCR MODULE 1800V 1250A DO200AA

  • Structure: Single
  • Number of SCRs, Diodes: 1 SCR
  • Voltage - Off State: 1.8 kV
  • Current - On State (It (AV)) (Max): 644 A
  • Current - On State (It (RMS)) (Max): 1250 A
  • Voltage - Gate Trigger (Vgt) (Max): 2.2 V
  • Current - Gate Trigger (Igt) (Max): 250 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
  • Current - Hold (Ih) (Max): 300 mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
封装: -
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S29GL01GS10TFA013
Infineon Technologies

IC FLASH 1GBIT CFI 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: CFI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 100 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
封装: -
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S6J32FELSNSC20000
Infineon Technologies

TRAVEO-55NM

  • Core Processor: ARM® Cortex®-R5F
  • Core Size: 32-Bit
  • Speed: 240MHz
  • Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
  • Peripherals: DMA, I2S, LVD, POR, PWM, WDT
  • Number of I/O: 128
  • Program Memory Size: 4.171875MB (4.171875M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 2.125M x 8
  • Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
  • Data Converters: A/D 50x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 208-LQFP Exposed Pad
  • Supplier Device Package: 208-TEQFP (28x28)
封装: -
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IPB65R065C7ATMA2
Infineon Technologies

MOSFET N-CH 650V 33A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 171W (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存15,651
PSB7530
Infineon Technologies

PSB7530

  • Type: -
  • Applications: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
94-4344PBF
Infineon Technologies

IC MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
CY15V104QI-20LPXIT
Infineon Technologies

IC FRAM 4MBIT SPI 20MHZ 8GQFN

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 4Mbit
  • Memory Interface: SPI
  • Clock Frequency: 20 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20 ns
  • Voltage - Supply: 1.71V ~ 1.89V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UQFN
  • Supplier Device Package: 8-GQFN (3.23x3.28)
封装: -
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IPW50R250CPFKSA1
Infineon Technologies

MOSFET N-CH 500V 13A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 520µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 114W (Tc)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-1
  • Package / Case: TO-247-3
封装: -
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DDB6U104N16RRB37BOSA1
Infineon Technologies

MOD DIODE BRIDGE ECONO2-7

  • Diode Type: -
  • Technology: -
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
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TZ530N36KOFS01HPSA1
Infineon Technologies

SCR MODULE 3.6KV 1500A MODULE

  • Structure: Single
  • Number of SCRs, Diodes: 1 SCR
  • Voltage - Off State: 3.6 kV
  • Current - On State (It (AV)) (Max): 955 A
  • Current - On State (It (RMS)) (Max): 1500 A
  • Voltage - Gate Trigger (Vgt) (Max): 2 V
  • Current - Gate Trigger (Igt) (Max): 250 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 22A @ 50Hz
  • Current - Hold (Ih) (Max): 500 mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
封装: -
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TT310N20KOFHPSA1
Infineon Technologies

SCR MODULE 2KV 700A MODULE

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 2 kV
  • Current - On State (It (AV)) (Max): 446 A
  • Current - On State (It (RMS)) (Max): 700 A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5 V
  • Current - Gate Trigger (Igt) (Max): 250 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 10000A @ 50Hz
  • Current - Hold (Ih) (Max): 300 mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
封装: -
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