Infineon Technologies 产品

IRF7607TRPBF

Infineon Technologies

MOSFET N-CH 20V 6.5A MICRO8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Micro8?
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

AUIRF1324WL

Infineon Technologies

MOSFET N-CH 24V 240A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 24V
• Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7630pF @ 19V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 195A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262-3 Wide
• Package / Case: TO-262-3 Wide Leads

封装: TO-262-3 Wide Leads

IPD200N15N3GATMA1

Infineon Technologies

MOSFET N-CH 150V 50A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 4V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

PTFA081501E V1

Infineon Technologies

FET RF 65V 900MHZ H-30248-2

• Transistor Type: LDMOS
• Frequency: 900MHz
• Gain: 18dB
• Voltage - Test: 28V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 950mA
• Power - Output: 150W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads, Flanged
• Supplier Device Package: H-30248-2

封装: 2-Flatpack, Fin Leads, Flanged

BC847CWE6327BTSA1

Infineon Technologies

TRANS NPN 45V 0.1A SOT-323

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

封装: SC-70, SOT-323

BB914E6327HTSA1

Infineon Technologies

DIODE VAR CAP 18V 50MA SOT-23

• Capacitance @ Vr, F: 19.75pF @ 8V, 1MHz
• Capacitance Ratio: 2.42
• Capacitance Ratio Condition: C2/C8
• Voltage - Peak Reverse (Max): 18V
• Diode Type: 1 Pair Common Cathode
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

BB639E7904HTSA1

Infineon Technologies

DIODE VAR CAP 30V 20MA SOD-323

• Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
• Capacitance Ratio: 14.7
• Capacitance Ratio Condition: C1/C28
• Voltage - Peak Reverse (Max): 30V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: PG-SOD323-2

封装: SC-76, SOD-323

SIDC32D170H

Infineon Technologies

DIODE GEN PURP 1.7KV 50A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1700V
• Current - Average Rectified (Io): 50A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27µA @ 1700V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -55°C ~ 150°C

封装: Die

BAS21UE6433HTMA1

Infineon Technologies

DIODE ARRAY GP 200V 250MA SC74-6

• Diode Configuration: 3 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 250mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: PG-SC74-6

封装: SC-74, SOT-457

TLE4286GNTSA1

Infineon Technologies

IC REG LINEAR 5V 15MA SCT595-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 42V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.1V @ 10mA
• Current - Output: 15mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 100µA
• PSRR: 60dB (100Hz)
• Control Features: Inhibit
• Protection Features: Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (5 Leads), Gull Wing
• Supplier Device Package: PG-SCT595-5

封装: 6-SMD (5 Leads), Gull Wing

TLE75602EMHXUMA1

Infineon Technologies

MC RELAY + LED

• Switch Type: Relay, Solenoid Driver
• Number of Outputs: 8
• Ratio - Input:Output: 1:8
• Output Configuration: High Side or Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 3 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Current - Output (Max): 330mA
• Rds On (Typ): 1 Ohm
• Input Type: -
• Features: -
• Fault Protection: Open Loop, Over Load, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-SSOP-24-9

封装: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad

PEB 24911 H V1.3

Infineon Technologies

IC NETWORK TERM QUAD MQFP64

• Function: Echo Cancellation
• Interface: IOM-2, ISDN
• Number of Circuits: 4
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 64-QFP
• Supplier Device Package: P-64-MQFP

封装: 64-QFP

TLE4941-1-HT

Infineon Technologies

MAGNET SWITCH SPEC PURP SSO-2-2

• Function: Special Purpose
• Technology: Hall Effect
• Polarization: -
• Sensing Range: -
• Test Condition: -
• Voltage - Supply: 4.5 V ~ 20 V
• Current - Supply (Max): 16.8mA
• Current - Output (Max): -
• Output Type: Current Source
• Features: -
• Operating Temperature: -
• Package / Case: 2-SIP, SSO-2-2
• Supplier Device Package: P-SSO-2-2

封装: 2-SIP, SSO-2-2

TLE5012BDE1200XUMA1

Infineon Technologies

SPEED SENSORS 16TDSO

• Function: -
• Technology: -
• Polarization: -
• Sensing Range: -
• Test Condition: -
• Voltage - Supply: -
• Current - Supply (Max): -
• Current - Output (Max): -
• Output Type: -
• Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

ICL5102XUMA1

Infineon Technologies

LED LIGHTING

• Type: AC DC Offline Switcher
• Topology: Half-Bridge
• Internal Switch(s): No
• Number of Outputs: 1
• Voltage - Supply (Min): 8.5V
• Voltage - Supply (Max): 18V
• Voltage - Output: -
• Current - Output / Channel: -
• Frequency: 1.3MHz
• Dimming: No
• Applications: LED Lighting
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-16

封装: 16-SOIC (0.154", 3.90mm Width)

TLE9185QXXUMA1

Infineon Technologies

IC MOTOR DVR 3PH 5V 250MA 48VQFN

• Motor Type - Stepper: Multiphase
• Motor Type - AC, DC: Brushless DC (BLDC)
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Pre-Driver - Half Bridge (3)
• Interface: SPI
• Technology: NMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 250mA
• Voltage - Supply: 4.5V ~ 28V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-29

封装: -

2ED2181S06FXUMA1

Infineon Technologies

IC HALF BRIDGE GATE DRIVER 650V

• Driven Configuration: High-Side or Low-Side
• Channel Type: Synchronous
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10V ~ 20V
• Logic Voltage - VIL, VIH: 1.1V, 1.7V
• Current - Peak Output (Source, Sink): 2.5A, 2.5A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 650 V
• Rise / Fall Time (Typ): 15ns, 15ns
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8-53

封装: -

CY9BF167RPMC-GNE2

Infineon Technologies

IC MCU 32BIT 800KB FLASH 120LQFP

• Core Processor: ARM® Cortex®-M4F
• Core Size: 32-Bit Single-Core
• Speed: 160MHz
• Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 100
• Program Memory Size: 800KB (800K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 96K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 24x12b SAR; D/A 2x12b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 120-LQFP
• Supplier Device Package: 120-LQFP (16x16)

封装: -

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CYAT817L-128AA72

Infineon Technologies

PSOC BASED - TRUETOUCH

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, SPI, UART/USART
• Peripherals: PWM
• Number of I/O: 29
• Program Memory Size: 48KB (48K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 128-LQFP
• Supplier Device Package: PG-TQFP-128-800

封装: -

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FF450R17ME4PBOSA1

Infineon Technologies

IGBT MOD 1700V 900A 20MW

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 900 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
• Current - Collector Cutoff (Max): 3 mA
• Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

IGLR60R340D1XUMA1

Infineon Technologies

GAN HV

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 1.6V @ 530µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 87.7 pF @ 400 V
• Vgs (Max): -10V
• FET Feature: -
• Power Dissipation (Max): 41.6W (Tc)
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSON-8-7
• Package / Case: 8-PowerTDFN

封装: -

F1225R12KT4GBOSA1

Infineon Technologies

IGBT MOD 1200V 25A 160W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 25 A
• Power - Max: 160 W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

SIDC14D60C8X7SA1

Infineon Technologies

DIODE GEN PURP 600V 50A DIE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die
• Operating Temperature - Junction: -40°C ~ 175°C

封装: -

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CY15B116QN-40BKXIT

Infineon Technologies

FRAM

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 16Mbit
• Memory Interface: SPI
• Clock Frequency: 40 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 9 ns
• Voltage - Supply: 1.8V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-FBGA (6x8)

封装: -

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64-4125PBF

Infineon Technologies

MOSFET

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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IRSM505-015PAALMA1

Infineon Technologies

IC HALF BRIDGE DRIVER 1.2A 23SOP

• Output Configuration: Half Bridge (3)
• Applications: AC Motors
• Interface: Logic, PWM
• Load Type: Inductive
• Technology: MOSFET (Metal Oxide)
• Rds On (Typ): 5Ohm LS, 5Ohm HS
• Current - Output / Channel: 1.2A
• Current - Peak Output: -
• Voltage - Supply: 13.5V ~ 16.5V
• Voltage - Load: 400V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: UVLO
• Mounting Type: Surface Mount
• Package / Case: 23-PowerSMD Module
• Supplier Device Package: 23-SOP

封装: -

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FF600R12IE4PNOSA1

Infineon Technologies

IGBT MOD 1200V 600A 3350W

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 600 A
• Power - Max: 3350 W
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

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AIDW10S65C5XKSA1

Infineon Technologies

DIODE SIL CARB 650V 10A TO247-3

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 60 µA @ 650 V
• Capacitance @ Vr, F: 303pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-41
• Operating Temperature - Junction: -40°C ~ 175°C

封装: -

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ISC012N04LM6ATMA1

Infineon Technologies

TRENCH <= 40V PG-TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 238A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8 FL
• Package / Case: 8-PowerTDFN

封装: -

TLT9251VLEXUMA1

Infineon Technologies

IC TRANSCEIVER HALF 1/1 TSON-8

• Type: Transceiver
• Protocol: CANbus
• Number of Drivers/Receivers: 1/1
• Duplex: Half
• Receiver Hysteresis: 30 mV
• Data Rate: 5Mbps
• Voltage - Supply: 4.5V ~ 5.5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 8-TDFN Exposed Pad
• Supplier Device Package: PG-TSON-8-1

封装: -