Infineon Technologies 产品

IKD03N60RFATMA1

Infineon Technologies

IGBT 600V 6.5A 53.6W TO252

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 6.5A
• Current - Collector Pulsed (Icm): 7.5A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
• Power - Max: 53.6W
• Switching Energy: 50µJ (on), 40µJ (off)
• Input Type: Standard
• Gate Charge: 17.1nC
• Td (on/off) @ 25°C: 10ns/128ns
• Test Condition: 400V, 2.5A, 68 Ohm, 15V
• Reverse Recovery Time (trr): 31ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRLR8729PBF

Infineon Technologies

MOSFET N-CH 30V 58A D-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 55W (Tc)
• Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IPB10N03LB G

Infineon Technologies

MOSFET N-CH 30V 50A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1639pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 58W (Tc)
• Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

封装: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

BTS113AE3064NKSA1

Infineon Technologies

MOSFET N-CH 60V 11.5A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 170 mOhm @ 5.8A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: P-TO220AB
• Package / Case: TO-220-3

封装: TO-220-3

IPA50R500CEXKSA2

Infineon Technologies

MOSFET N-CH 500V 5.4A TO-220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 13V
• Vgs(th) (Max) @ Id: 3.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 18.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 433pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 28W (Tc)
• Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.3A, 13V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Full Pack
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

IRFH8337TRPBF

Infineon Technologies

MOSFET N-CH 30V 12A 5X6 PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.2W (Ta), 27W (Tc)
• Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 16.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PQFN (5x6)
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

IPW60R190P6

Infineon Technologies

MOSFET N-CH 600V 20.2A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 630µ
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 151W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

封装: TO-247-3

BCR 148T E6327

Infineon Technologies

TRANS PREBIAS NPN 250MW SC75

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 70mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 100MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: PG-SC-75

封装: SC-75, SOT-416

SIDC03D120F6

Infineon Technologies

DIODE GEN PURP 1.2KV 2A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 2A (DC)
• Voltage - Forward (Vf) (Max) @ If: 2.1V @ 2A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -55°C ~ 150°C

封装: Die

TLE4294GV50HTSA1

Infineon Technologies

IC REG LINEAR 5V 30MA SCT595-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.4V @ 20mA
• Current - Output: 30mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 200µA ~ 4mA
• PSRR: 60dB (100Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (5 Leads), Gull Wing
• Supplier Device Package: PG-SCT595-5

封装: 6-SMD (5 Leads), Gull Wing

PBL38650/2QNS

Infineon Technologies

IC LINE INTERFACE SLIC PLCC-28

• Function: Subscriber Line Interface Concept (SLIC)
• Interface: -
• Number of Circuits: 1
• Voltage - Supply: 5V
• Current - Supply: 2.8mA
• Power (Watts): 730mW
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-LCC (J-Lead)
• Supplier Device Package: P/PG-LCC-28

封装: 28-LCC (J-Lead)

XC836M2FRIABFXUMA1

Infineon Technologies

IC MCU 8BIT 8KB FLASH 28TSSOP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 24MHz
• Connectivity: I2C, SSC, UART/USART
• Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
• Number of I/O: 23
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 512 x 8
• Voltage - Supply (Vcc/Vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 28-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 28-TSSOP

封装: 28-TSSOP (0.173", 4.40mm Width)

XMC1201Q040F0200ABXUMA1

Infineon Technologies

IC MCU 32BIT 200KB FLASH 40VQFN

• Core Processor: ARM? Cortex?-M0
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I2C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
• Number of I/O: 27
• Program Memory Size: 200KB (200K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-40-13

封装: 40-VFQFN Exposed Pad

SLE66R35RMCC8IXHSA1

Infineon Technologies

IC SECURITY CHIP CARD CTLR SMD

• Applications: Security
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: ISO14443-3 Type A
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -25°C ~ 70°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

V23826-C18-C64

Infineon Technologies

TXRX SINGLE MODE 155MBD 1X9

• Data Rate: 155Mbps
• Wavelength: 1300nm
• Applications: Ethernet
• Voltage - Supply: 4.75 V ~ 5.25 V
• Connector Type: SC
• Mounting Type: Through Hole

封装: -

SAK-XC2267M-104F80L AB

Infineon Technologies

IC MCU 16BIT 100LQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

DD200S33K2CC1NOSA1

Infineon Technologies

DIODE MOD GP 3300V 200A AIHV73-3

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 3300 V
• Current - Average Rectified (Io) (per Diode): 200A (DC)
• Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 200 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: A-IHV73-3

封装: -

Request a Quote

TLF35584QVHS2XUMA1

Infineon Technologies

OPTIREG PMIC

• Applications: Industrial Safety
• Voltage - Input: 3V ~ 40V
• Number of Outputs: 8
• Voltage - Output: Multiple
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48

封装: -

CYT2B93CACQ0AZEGS

Infineon Technologies

IC MCU 32BT 2.0625MB FLSH 64LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 160MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 49
• Program Memory Size: 2.0625MB (2.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 256K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 45x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

封装: -

DDB2U20N12W1RFB11BPSA1

Infineon Technologies

LOW POWER EASY AG-EASY1B-2311

• Diode Type: Single Phase
• Technology: Silicon Carbide Schottky
• Voltage - Peak Reverse (Max): 1.2 kV
• Current - Average Rectified (Io): 20 A
• Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
• Current - Reverse Leakage @ Vr: 58 µA @ 1200 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY1B-1

封装: -

D1461S45TXPSA2

Infineon Technologies

DIODE GEN PURP 1720A D10026K-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): 1720A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 mA @ 4500 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200, Variant
• Supplier Device Package: BG-D10026K-1
• Operating Temperature - Junction: -40°C ~ 140°C

封装: -

Request a Quote

FP50R06W2E3BOMA1

Infineon Technologies

IGBT MODULE 600V 65A 175W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 65 A
• Power - Max: 175 W
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

CG8832AMT

Infineon Technologies

IC

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

Request a Quote

CY8C6336LQI-BLF02

Infineon Technologies

IC MCU 32BIT 512KB FLASH 68QFN

• Core Processor: ARM® Cortex®-M4F
• Core Size: 32-Bit
• Speed: 150MHz
• Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
• Number of I/O: 36
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 68-VFQFN Exposed Pad
• Supplier Device Package: 68-QFN (8x8)

封装: -

Request a Quote

CY8C4147LQS-S453

Infineon Technologies

IC MCU 32BIT 128KB FLASH 40QFN

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
• Number of I/O: 34
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 20x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

封装: -

Request a Quote

IPDQ60R022S7AXTMA1

Infineon Technologies

MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 12V
• Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
• Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
• Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 416W (Tc)
• Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HDSOP-22-1
• Package / Case: 22-PowerBSOP Module

封装: -

Request a Quote

IPB016N08NF2SATMA1

Infineon Technologies

TRENCH 40<-<100V PG-TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 267µA
• Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 1.65mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

IPZA60R120P7XKSA1

Infineon Technologies

MOSFET N-CH 600V 26A TO247-4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 410µA
• Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 95W (Tc)
• Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-4
• Package / Case: TO-247-4

封装: -

IFF450B12ME4PB11BPSA1

Infineon Technologies

IGBT MOD 1200V 450A 40W

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 450 A
• Power - Max: 40 W
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
• Current - Collector Cutoff (Max): 3 mA
• Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

SLS32AIA010MKUSON10XTMA3

Infineon Technologies

SECURITY ICS / AUTHENTICATION IC

• Applications: Security
• Core Processor: 16-Bit
• Program Memory Type: NVSRAM
• Controller Series: -
• RAM Size: 10K x 8
• Interface: I2C
• Number of I/O: -
• Voltage - Supply: 1.62V ~ 5.5V
• Operating Temperature: -25°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 10-UFDFN Exposed Pad
• Supplier Device Package: PG-USON-10-2

封装: -

Request a Quote