页 237 - Infineon Technologies 产品 | 深圳黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  237/567
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IRF1404ZGPBF
Infineon Technologies

MOSFET N-CH 40V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 220W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存4,656
hot IRLR2703TRLPBF
Infineon Technologies

MOSFET N-CH 30V 23A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存18,516
IPB070N06L G
Infineon Technologies

MOSFET N-CH 60V 80A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,312
hot IPP04N03LA
Infineon Technologies

MOSFET N-CH 25V 80A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3877pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 55A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存103,464
BSP296E6327
Infineon Technologies

MOSFET N-CH 100V 1.1A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.79W (Ta)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存4,176
hot IRF7807D2TR
Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存46,200
IRFSL5615PBF
Infineon Technologies

MOSFET N-CH 150V 33A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 144W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存3,392
IRFU7740PBF
Infineon Technologies

MOSFET N CH 75V 87A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4430pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 52A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存6,928
IPD50R2K0CEAUMA1
Infineon Technologies

MOSFET N-CH 500V 2.4A PG-TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 124pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 Ohm @ 600mA, 13V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存7,856
IPT007N06NATMA1
Infineon Technologies

MOSFET N-CH 60V 300A 8HSOF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 216nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 16000pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.75 mOhm @ 150A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-1
  • Package / Case: 8-PowerSFN
封装: 8-PowerSFN
库存3,248
hot IPB65R190CFD
Infineon Technologies

MOSFET N-CH 650V 17.5A TO263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 151W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存12,960
IDK04G65C5XTMA2
Infineon Technologies

DIODE SCHOTTKY 650V 4A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 670µA @ 650V
  • Capacitance @ Vr, F: 130pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,808
hot IR3563BMTRPBF
Infineon Technologies

IC REG CTRLR BUCK PWM 48QFN

  • Applications: Controller, Intel VR12, VR12.5
  • Voltage - Input: 3.3V
  • Number of Outputs: 1
  • Voltage - Output: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: 48-QFN (6x6)
封装: 48-VFQFN Exposed Pad
库存65,088
BTS721L1T
Infineon Technologies

IC SWITCH HI-SIDE 4-CH DSO-20

  • Switch Type: General Purpose
  • Number of Outputs: 4
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 5 V ~ 34 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2.5A
  • Rds On (Typ): 85 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart, Status Flag
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: P-DSO-20
封装: 20-SOIC (0.295", 7.50mm Width)
库存3,744
TLE7183FXUMA9
Infineon Technologies

IC MOTOR CONTROLLER PAR 48VQFN

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushless DC (BLDC)
  • Function: Controller - Commutation, Direction Management
  • Output Configuration: Pre-Driver - Half Bridge (3)
  • Interface: Parallel
  • Technology: Power MOSFET
  • Step Resolution: -
  • Applications: Automotive
  • Current - Output: -
  • Voltage - Supply: 5.5 V ~ 20 V
  • Voltage - Load: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VQFN Exposed Pad
  • Supplier Device Package: PG-VQFN-48
封装: 48-VQFN Exposed Pad
库存2,592
SAK-XC886CM-6FFI 5V AC
Infineon Technologies

IC MCU 8BIT 24KB FLASH 48TQFP

  • Core Processor: XC800
  • Core Size: 8-Bit
  • Speed: 24MHz
  • Connectivity: CAN, SSI, UART/USART
  • Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
  • Number of I/O: 34
  • Program Memory Size: 24KB (24K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 1.75K x 8
  • Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
  • Data Converters: A/D 8x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 48-TQFP
  • Supplier Device Package: 48-TQFP (7x7)
封装: 48-TQFP
库存6,784
XC8866FFI5VACFXUMA1
Infineon Technologies

IC MCU 8BIT 24KB FLASH 48TQFP

  • Core Processor: XC800
  • Core Size: 8-Bit
  • Speed: 24MHz
  • Connectivity: SSI, UART/USART
  • Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
  • Number of I/O: 34
  • Program Memory Size: 24KB (24K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 1.75K x 8
  • Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
  • Data Converters: A/D 8x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 48-TQFP
  • Supplier Device Package: 48-TQFP (7x7)
封装: 48-TQFP
库存3,248
SP370251160XTMA3
Infineon Technologies

BOARD MOUNT PRESSURE SENSOR

  • Sensor Type: Tire Pressure Monitoring (TPMS)
  • Output Type: RF
  • Operating Temperature: -40°C ~ 125°C (TA)
封装: -
库存5,112
PVR2300NPBF
Infineon Technologies

IC RELAY PHOTOV 200V 165MA 16DIP

  • Circuit: DPST (2 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 24 Ohm
  • Load Current: 165mA
  • Voltage - Input: 1.2VDC
  • Voltage - Load: 0 ~ 200 V
  • Mounting Type: Through Hole
  • Termination Style: PC Pin
  • Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
  • Supplier Device Package: 16-DIP
  • Relay Type: Relay
封装: 16-DIP (0.300", 7.62mm), 10 Leads
库存5,724
TLE92623BQXV33XUMA1
Infineon Technologies

IC SBC 48VQFN

  • Applications: Automotive
  • Interface: SPI
  • Voltage - Supply: 28V
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: PG-VQFN-48-31
  • Mounting Type: Surface Mount
封装: 48-VFQFN Exposed Pad
库存5,728
ISP12DP06NMXTSA1
Infineon Technologies

MOSFET P-CH 60V 2.8A SOT223-4

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 520µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
封装: -
库存4,914
CY8CTMA616AE-22T
Infineon Technologies

IC TRUETOUCH CAPSENSE 100TQFP

  • Applications: -
  • Core Processor: -
  • Program Memory Type: -
  • Controller Series: -
  • RAM Size: -
  • Interface: -
  • Number of I/O: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
SIGC14T60SNCX1SA4
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 31ns/261ns
  • Test Condition: 400V, 15A, 21Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
BC857CB5000
Infineon Technologies

BIPOLAR TRANSISTOR TRANSISTOR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 330 mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3-1
封装: -
Request a Quote
S6BP401AM2SN1B200
Infineon Technologies

PMIC AUTO ANALOG

  • Topology: -
  • Function: -
  • Number of Outputs: -
  • Frequency - Switching: -
  • Voltage/Current - Output 1: -
  • Voltage/Current - Output 2: -
  • Voltage/Current - Output 3: -
  • w/LED Driver: -
  • w/Supervisor: -
  • w/Sequencer: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
S25FL128SAGBHEA00
Infineon Technologies

IC FLASH 128MBIT SPI/QUAD 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
封装: -
Request a Quote
AUIRFSL8408
Infineon Technologies

MOSFET N-CH 40V 195A TO262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 294W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
封装: -
Request a Quote
FF100R12YT3B60BOMA1
Infineon Technologies

FF100R12YT3B60BO- IGBT MOD 1.2kV

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 140 A
  • Power - Max: 1650 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封装: -
Request a Quote
FS200R12KT4RPB51BPSA1
Infineon Technologies

FS200R12 - IGBT MODULE

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
CY8C614ABZI-S2F04
Infineon Technologies

IC MCU 32BIT 2MB FLASH 124VFBGA

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 150MHz
  • Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
  • Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
  • Number of I/O: 100
  • Program Memory Size: 2MB (2M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 1M x 8
  • Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
  • Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 124-VFBGA
  • Supplier Device Package: 124-VFBGA (9x9)
封装: -
库存1,560