Infineon Technologies 产品

IRG4BC30UDPBF

Infineon Technologies

IGBT 600V 23A 100W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 23A
• Current - Collector Pulsed (Icm): 92A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: 380µJ (on), 160µJ (off)
• Input Type: Standard
• Gate Charge: 50nC
• Td (on/off) @ 25°C: 40ns/91ns
• Test Condition: 480V, 12A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

IRF7811ATR

Infineon Technologies

MOSFET N-CH 28V 11.4A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 28V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

BTS247ZE3062AATMA2

Infineon Technologies

MOSFET N-CH 55V 33A TO220-5

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Temperature Sensing Diode
• Power Dissipation (Max): 120W (Tc)
• Rds On (Max) @ Id, Vgs: 18 mOhm @ 12A, 10V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-5
• Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

IRFS3207PBF

Infineon Technologies

MOSFET N-CH 75V 170A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFR3410PBF

Infineon Technologies

MOSFET N-CH 100V 31A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 110W (Tc)
• Rds On (Max) @ Id, Vgs: 39 mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

BSC046N10NS3GATMA1

Infineon Technologies

MOSFET N-CH 100V 100A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 120µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 156W (Tc)
• Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

BC857CWE6327BTSA1

Infineon Technologies

TRANS PNP 45V 0.1A SOT-323

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

封装: SC-70, SOT-323

BTS52312GSXUMA1

Infineon Technologies

IC PWR SWITCH HISIDE PGDSO-14-31

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 4.5 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.8A
• Rds On (Typ): 140 mOhm (Max)
• Input Type: Non-Inverting
• Features: Auto Restart, Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-14

封装: 14-SOIC (0.154", 3.90mm Width)

TLE824523SAAUMA1

Infineon Technologies

IC SW SMART MULTICHAN DSO36

• Switch Type: Relay, Solenoid Driver
• Number of Outputs: 4
• Ratio - Input:Output: 1:2
• Output Configuration: High Side or Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 8 V ~ 17 V
• Voltage - Supply (Vcc/Vdd): 4.75 V ~ 5.25 V
• Current - Output (Max): 1.5A
• Rds On (Typ): 250 mOhm (Max)
• Input Type: -
• Features: Slew Rate Controlled, Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 36-BSSOP (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-36

封装: 36-BSSOP (0.295", 7.50mm Width)

BTS500551TMAATMA1

Infineon Technologies

IC SWITCH PWR HISIDE TO220-7

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5 V ~ 34 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 55A
• Rds On (Typ): 4.4 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
• Supplier Device Package: PG-TO220-7

封装: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

BCR402RE6433HTMA1

Infineon Technologies

IC LED DRIVER LIN 60MA SOT143R-4

• Type: Linear
• Topology: -
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 1.2V
• Voltage - Supply (Max): 18V
• Voltage - Output: 16V
• Current - Output / Channel: 60mA
• Frequency: -
• Dimming: -
• Applications: Lighting
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SOT-143R
• Supplier Device Package: PG-SOT143R-4

封装: SOT-143R

IR21531STR

Infineon Technologies

IC DRVR HALF BRDG SELF-OSC 8SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 2
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 10 V ~ 15.6 V
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): -
• Input Type: RC Input Circuit
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 45ns
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

IR21094S

Infineon Technologies

IC DRIVER HALF-BRIDGE 14-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.9V
• Current - Peak Output (Source, Sink): 200mA, 350mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 150ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SOIC

封装: 14-SOIC (0.154", 3.90mm Width)

PEF 2054 N V2.1

Infineon Technologies

IC CONTROLLER PCM 44LCC

• Function: PCM Interface Controller
• Interface: ISDN, PCM
• Number of Circuits: 1
• Voltage - Supply: 5V
• Current - Supply: 9.5mA
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 44-LCC (J-Lead)
• Supplier Device Package: P-LCC-44

封装: 44-LCC (J-Lead)

XMC1402Q040X0032AAXUMA1

Infineon Technologies

IC MCU 32BIT 32KB FLASH 40VQFN

• Core Processor: ARM? Cortex?-M0
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
• Number of I/O: 27
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 12x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-40-17

封装: 40-VFQFN Exposed Pad

TC267D40F200SBCKXUMA1

Infineon Technologies

IC MCU 32BIT 2.5MB FLASH 292LFBG

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

CY8C4125LQA-S423

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 34
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

封装: -

Request a Quote

S26HL01GTFPBHB030

Infineon Technologies

IC FLASH 1GBIT HYPERBUS 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: HyperBus
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 6.5 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

封装: -

Request a Quote

TT330N12KOFHPSA2

Infineon Technologies

THYR / DIODE MODULE DK

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 330 A
• Current - On State (It (RMS)) (Max): 520 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 200 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 130°C
• Mounting Type: Chassis Mount
• Package / Case: Module

封装: -

Request a Quote

FF8MR12W1M1HB11BPSA1

Infineon Technologies

SIC 1200V AG-EASY1B

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY1B

封装: -

Request a Quote

CY8C6145FNI-S3F71T

Infineon Technologies

IC MCU 32BIT 512KB FLASH 49WLCSP

• Core Processor: ARM® Cortex®-M4F
• Core Size: 32-Bit
• Speed: 150MHz
• Connectivity: CANbus, eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
• Number of I/O: 37
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 256K x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 49-XBGA, WLCSP
• Supplier Device Package: 49-WLCSP (2.88x3.1)

封装: -

Request a Quote

IDK08G120C5XTMA1

Infineon Technologies

DIODE SIC 1.2KV 22.8A TO263-1

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 22.8A
• Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 8 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
• Capacitance @ Vr, F: 365pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-2-1
• Operating Temperature - Junction: -55°C ~ 175°C

封装: -

TD520N22KOFHPSA2

Infineon Technologies

SCR MODULE 2.2KV 1050A MODULE

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 520 A
• Current - On State (It (RMS)) (Max): 1050 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

封装: -

Request a Quote

16-3745-01-T

Infineon Technologies

IC GATE NOR

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

Request a Quote

S25FS064SDSBHI023

Infineon Technologies

IC FLASH 64MBIT SPI/QUAD 24BGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 64Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 80 MHz
• Write Cycle Time - Word, Page: 2ms
• Access Time: 6 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-BGA (8x6)

封装: -

Request a Quote

AIMZH120R040M1TXKSA1

Infineon Technologies

SIC_DISCRETE

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
• Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
• Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
• Vgs (Max): +23V, -5V
• FET Feature: -
• Power Dissipation (Max): 268W (Tc)
• Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-4-11
• Package / Case: TO-247-4

封装: -

T1601N36TOFXPSA1

Infineon Technologies

SCR MODULE 3600V 2990A DO200AE

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 3.6 kV
• Current - On State (It (AV)) (Max): 2700 A
• Current - On State (It (RMS)) (Max): 2990 A
• Voltage - Gate Trigger (Vgt) (Max): 2.5 V
• Current - Gate Trigger (Igt) (Max): 350 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
• Current - Hold (Ih) (Max): 350 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AF

封装: -

Request a Quote

FS100R12W2T7PBPSA1

Infineon Technologies

LOW POWER EASY AG-EASY2B-711

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 70 A
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): 9 µA
• Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-EASY2B

封装: -

CY8C4245AZS-M443T

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, LCD, LVD, POR, PWM, SmartSense, Temp Sensor, WDT
• Number of I/O: 38
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR; D/A 4x7/8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP
• Supplier Device Package: 48-TQFP (7x7)

封装: -

Request a Quote

BSM300GA160DN13CB7HOSA1

Infineon Technologies

BSM300GA160 - INSULATED GATE BIP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

Request a Quote