Infineon Technologies 产品

SGD04N60BUMA1

Infineon Technologies

IGBT 600V 9.4A 50W TO252-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 9.4A
• Current - Collector Pulsed (Icm): 19A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
• Power - Max: 50W
• Switching Energy: 131µJ
• Input Type: Standard
• Gate Charge: 24nC
• Td (on/off) @ 25°C: 22ns/237ns
• Test Condition: 400V, 4A, 67 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRGPC40U

Infineon Technologies

IGBT UFAST 600V 40A TO-247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
• Power - Max: 160W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封装: TO-247-3

IPUH6N03LB G

Infineon Technologies

MOSFET N-CH 30V 50A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 40µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251-3
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

IRF3707ZS

Infineon Technologies

MOSFET N-CH 30V 59A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 57W (Tc)
• Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 21A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFS31N20DTRR

Infineon Technologies

MOSFET N-CH 200V 31A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 200W (Tc)
• Rds On (Max) @ Id, Vgs: 82 mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPA60R600C6XKSA1

Infineon Technologies

MOSFET N-CH 600V 7.3A TO220-FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 28W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-FP
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

IRFS7534TRL7PP

Infineon Technologies

MOSFET N CH 60V 240A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9990pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 290W (Tc)
• Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (7-Lead)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

封装: TO-263-7, D2Pak (6 Leads + Tab)

IRF540ZSTRLPBF

Infineon Technologies

MOSFET N-CH 100V 36A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 92W (Tc)
• Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF7205TRPBF

Infineon Technologies

MOSFET P-CH 30V 4.6A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Tc)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 4.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

PTVA127002EVV1R0XTMA1

Infineon Technologies

IC AMP RF LDMOS H-36275-4

• Transistor Type: -
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: -
• Package / Case: -
• Supplier Device Package: -

封装: -

BBY 65-02V E6327

Infineon Technologies

DIODE TUNING 15V 50MA SC-79

• Capacitance @ Vr, F: 2.8pF @ 4.7V, 1MHz
• Capacitance Ratio: 10.9
• Capacitance Ratio Condition: C0.3/C4.7
• Voltage - Peak Reverse (Max): 15V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: PG-SC79-2

封装: SC-79, SOD-523

IRSM505-055DA

Infineon Technologies

IC MOTOR DRIVER 500V 23DIP

• Output Configuration: Half Bridge (3)
• Applications: AC Motors
• Interface: Logic
• Load Type: Inductive
• Technology: UMOS
• Rds On (Typ): 1.3 Ohm
• Current - Output / Channel: 2.4A
• Current - Peak Output: 15A
• Voltage - Supply: 13.5 V ~ 16.5 V
• Voltage - Load: 400V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: UVLO
• Mounting Type: Through Hole
• Package / Case: 32-PowerDIP Module, 23 Leads
• Supplier Device Package: 23-DIP

封装: 32-PowerDIP Module, 23 Leads

IRSM515-024PA

Infineon Technologies

IC MOTOR DRIVER 250V 23SOP

• Output Configuration: Half Bridge (3)
• Applications: AC Motors
• Interface: Logic
• Load Type: Inductive
• Technology: UMOS
• Rds On (Typ): 1.8 Ohm
• Current - Output / Channel: 1.6A
• Current - Peak Output: 7A
• Voltage - Supply: 13.5 V ~ 16.5 V
• Voltage - Load: 200V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: UVLO
• Mounting Type: Surface Mount
• Package / Case: 32-PowerSMD Module, 23 Leads
• Supplier Device Package: 23-SOP

封装: 32-PowerSMD Module, 23 Leads

BGS14GA14E6327XTSA1

Infineon Technologies

RF SWITCH

• Frequency - Lower: 100MHz
• Frequency - Upper: 6GHz
• Isolation @ Frequency: 27dB @ 6GHz (typ)
• Insertion Loss @ Frequency: 0.65dB @ 6GHz
• IIP3: -
• Topology: -
• Circuit: SP4T
• P1dB: -
• Features: -
• Impedance: 50 Ohm
• Operating Temperature: -30°C ~ 85°C
• Voltage - Supply: 3V
• RF Type: -
• Package / Case: 14-UFQFN Exposed Pad
• Supplier Device Package: ATSLP-14-5

封装: 14-UFQFN Exposed Pad

PVG612APBF

Infineon Technologies

IC RELAY PHOTOVO 60V 2A 6-DIP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 100 mOhm
• Load Current: 2A
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 60 V
• Mounting Type: Through Hole
• Termination Style: PC Pin
• Package / Case: 6-DIP (0.300", 7.62mm)
• Supplier Device Package: 6-DIP
• Relay Type: Relay

封装: 6-DIP (0.300", 7.62mm)

PX8897EDQGR2ER1242AXUMA1

Infineon Technologies

IC REGULATOR PG-VQFN-48-34

• Applications: -
• Voltage - Input: -
• Number of Outputs: -
• Voltage - Output: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

TLE7237SLXUMA2

Infineon Technologies

IC DRIVER SPI RELAY CTRL 24SSOP

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

PLF2800EV1-2

Infineon Technologies

PLF2800 PURPLE L2+ ETHERNET SWIT

• Data Format: -
• Baud Rates: -
• Voltage - Supply: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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TDB6HK180N16RRBPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2B-411

• Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
• Number of SCRs, Diodes: 3 SCRs, 3 Diodes
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 100 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
• Current - Hold (Ih) (Max): 220 mA
• Operating Temperature: 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

封装: -

TLE9877QTW40XUMA1

Infineon Technologies

IC MCU 32BIT 64KB FLASH 48TQFP

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: LINbus, SPI, SSC, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
• Number of I/O: 10
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: 4K x 8
• RAM Size: 6K x 8
• Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
• Data Converters: A/D 5x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-TQFP Exposed Pad
• Supplier Device Package: 48-TQFP (7x7)

封装: -

CG9059AM

Infineon Technologies

IC

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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CY9AF311LPMC1-GE1

Infineon Technologies

IC MCU 32BIT 64KB FLASH 64LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 51
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 9x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

封装: -

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FF400R17KE4HOSA1

Infineon Technologies

IGBT MODULE 1700V 400A

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 400 A
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

S26HL02GTFGBHM040

Infineon Technologies

IC FLASH 2GBIT HYPERBUS 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 2Gbit
• Memory Interface: HyperBus
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

封装: -

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CYAT827AZA64-22002

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封装: -

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S80KS2564GACHI040

Infineon Technologies

IC PSRAM 256MBIT HYPERBUS 49FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 256Mbit
• Memory Interface: HyperBus
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 49-VBGA
• Supplier Device Package: 49-FBGA (8x8)

封装: -

ISC015N04NM5ATMA1

Infineon Technologies

40V 1.5M OPTIMOS MOSFET SUPERSO8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 206A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
• Vgs(th) (Max) @ Id: 3.4V @ 60µA
• Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 115W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8 FL
• Package / Case: 8-PowerTDFN

封装: -

51-20632Z01-A

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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CYT2B93BACQ0AZEGS

Infineon Technologies

IC MCU 32BT 2.0625MB FLSH 64LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 160MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 49
• Program Memory Size: 2.0625MB (2.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 256K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 45x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

封装: -

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BAS70-06WE6327

Infineon Technologies

DIODE ARR SCHOTT 70V 70MA SOT323

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 70 V
• Current - Average Rectified (Io) (per Diode): 70mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 100 ps
• Current - Reverse Leakage @ Vr: 100 nA @ 50 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3-1

封装: -

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