页 217 - Infineon Technologies 产品 | 深圳黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  217/567
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hot IRG4PH40UPBF
Infineon Technologies

IGBT 1200V 41A 160W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 82A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
  • Power - Max: 160W
  • Switching Energy: 1.04mJ (on), 3.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 86nC
  • Td (on/off) @ 25°C: 24ns/220ns
  • Test Condition: 960V, 21A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存5,200
BSL302SNL6327HTSA1
Infineon Technologies

MOSFET N-CH 30V 7.1A TSOP-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSOP6-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: SOT-23-6 Thin, TSOT-23-6
库存7,040
IRF7459PBF
Infineon Technologies

MOSFET N-CH 20V 12A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存6,608
hot IRFR2905ZTRR
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存62,388
IRFR3707TR
Infineon Technologies

MOSFET N-CH 30V 61A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 87W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存4,080
IPC302N20N3X1SA1
Infineon Technologies

MOSFET N-CH 200V BARE DIE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 260µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Sawn on foil
  • Package / Case: Die
封装: Die
库存3,088
hot SPW15N60C3
Infineon Technologies

MOSFET N-CH 650V 15A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 675µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存121,836
hot IRF7503TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 2.4A MICRO8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8?
封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
库存91,512
IRAM538-0865A
Infineon Technologies

POWER DRIVER MOD 600V 8A LFRAME

  • Type: IGBT
  • Configuration: 3 Phase
  • Current: 8A
  • Voltage: 600V
  • Voltage - Isolation: -
  • Package / Case: -
封装: -
库存6,752
BAR 88-02LRH E6433
Infineon Technologies

DIODE PIN SGL 80V 100MA TSLP-2-7

  • Diode Type: PIN - Single
  • Voltage - Peak Reverse (Max): 80V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
  • Resistance @ If, F: 600 mOhm @ 10mA, 100MHz
  • Power Dissipation (Max): 250mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SOD-882
  • Supplier Device Package: PG-TSLP-2
封装: SOD-882
库存7,696
IFX54441LDV33XUMA1
Infineon Technologies

IC REG LINEAR 3.3V 300MA 10TSON

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 20V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.4V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 60µA ~ 12mA
  • PSRR: 65dB (120Hz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature, Reverse Polarity
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 10-TFDFN Exposed Pad
  • Supplier Device Package: PG-TSON-10
封装: 10-TFDFN Exposed Pad
库存7,344
hot IRU1160CPTR
Infineon Technologies

IC REG LIN POS ADJ 516-UTHINPAK

  • Output Configuration: Positive
  • Output Type: Adjustable
  • Number of Regulators: 1
  • Voltage - Input (Max): 7V
  • Voltage - Output (Min/Fixed): 1.25V
  • Voltage - Output (Max): 5.5V
  • Voltage Dropout (Max): 1.3V @ 6A
  • Current - Output: 6A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 10mA
  • PSRR: 70dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: 0°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-6, DPak (5 Leads + Tab)
  • Supplier Device Package: 516-Ultra Thin-Pak?
封装: TO-252-6, DPak (5 Leads + Tab)
库存168,000
XMC1100T038F0064AAXUMA1
Infineon Technologies

IC MCU 32BIT 64KB FLASH 38TSSOP

  • Core Processor: ARM? Cortex?-M0
  • Core Size: 32-Bit
  • Speed: 32MHz
  • Connectivity: I2C, LIN, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
  • Number of I/O: 26
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
  • Data Converters: A/D 12x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 38-TFSOP (0.173", 4.40mm Width)
  • Supplier Device Package: PG-TSSOP-38-9
封装: 38-TFSOP (0.173", 4.40mm Width)
库存3,568
XMC1302T038X0200AAXUMA1
Infineon Technologies

IC MCU 32BIT 200KB FLASH 38TSSOP

  • Core Processor: ARM? Cortex?-M0
  • Core Size: 32-Bit
  • Speed: 32MHz
  • Connectivity: I2C, LIN, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
  • Number of I/O: 26
  • Program Memory Size: 200KB (200K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
  • Data Converters: A/D 16x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: 38-TFSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 38-TSSOP
封装: 38-TFSOP (0.173", 4.40mm Width)
库存3,920
TLE9831QV
Infineon Technologies

IC MOTOR DRIVER 48VQFN

  • Applications: Automotive
  • Core Processor: XC800
  • Program Memory Type: FLASH (36 kB)
  • Controller Series: -
  • RAM Size: 3.25K x 8
  • Interface: LIN, SSI, UART
  • Number of I/O: 5
  • Voltage - Supply: 3 V ~ 27 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: PG-VQFN-48-31
封装: 48-VFQFN Exposed Pad
库存3,680
DF1000R17IE4PBPSA1
Infineon Technologies

PP IHM I XHP 1 7KV

  • IGBT Type: Trench Field Stop
  • Configuration: Single Chopper
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 1000 A
  • Power - Max: 1000000 W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-PRIME3-1
封装: -
Request a Quote
CG7732AA
Infineon Technologies

IC EMI REDUCTION PREMIS SSCG

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
CY8C4146AZA-S245
Infineon Technologies

PSOC4 - GENERAL

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 24MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
  • Number of I/O: 54
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 8K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16, 20x10/12b SAR
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
封装: -
Request a Quote
S29GL512T11FHIV43
Infineon Technologies

IC FLASH 512MBIT PARALLEL 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 110 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
封装: -
Request a Quote
IHW40N60RFFKSA1
Infineon Technologies

IGBT TRENCH 600V 80A TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 305 W
  • Switching Energy: 560µJ (off)
  • Input Type: Standard
  • Gate Charge: 220 nC
  • Td (on/off) @ 25°C: -/175ns
  • Test Condition: 400V, 40A, 5.6Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
封装: -
Request a Quote
CYT3BB5CEBQ1AEEGS
Infineon Technologies

TRAVEO-2 BODY HIGH-END

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 250MHz
  • Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
  • Number of I/O: 72
  • Program Memory Size: 4.0625MB (4.0625M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 256K x 8
  • RAM Size: 768K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 55x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP Exposed Pad
  • Supplier Device Package: 100-TEQFP (14x14)
封装: -
库存2,700
STK14C88C-1XWI
Infineon Technologies

IC

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 32-CDIP
封装: -
Request a Quote
IAUS300N10S5N015TATMA1
Infineon Technologies

MOSFET N-CH 100V 300A HDSOP-16-2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 275µA
  • Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-16-2
  • Package / Case: 16-PowerSOP Module
封装: -
库存5,730
RP111H191D-T1-FE
Infineon Technologies

RP111H - Low Voltage Good Load T

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.25V
  • Voltage - Output (Min/Fixed): 1.9V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.41V @ 500mA
  • Current - Output: 500mA
  • Current - Quiescent (Iq): 125 µA
  • Current - Supply (Max): -
  • PSRR: 75dB (10kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-89-5/6
  • Supplier Device Package: SOT-89-5
封装: -
Request a Quote
CY8C4025AZQ-S413
Infineon Technologies

IC MCU 32BIT 32KB FLASH 48TQFP

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 24MHz
  • Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 36
  • Program Memory Size: 32KB (32K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 4K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x10b Sigma-Delta; D/A 2x7/8b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-LQFP
  • Supplier Device Package: 48-TQFP (7x7)
封装: -
库存1,464
CYAT817AZA98-53002
Infineon Technologies

PSOC BASED - TRUETOUCH

  • Touchscreen: 2 Wire Capacitive
  • Resolution (Bits): -
  • Interface: I2C, SPI
  • Voltage Reference: -
  • Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
  • Current - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 128-LQFP
  • Supplier Device Package: 128-TQFP (14x20)
封装: -
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IPP60R520C6XKSA1
Infineon Technologies

MOSFET N-CH 600V 8.1A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
封装: -
Request a Quote
IQE036N08NM6CGATMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
FS300R12OE4B81BPSA1
Infineon Technologies

MEDIUM POWER ECONO

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 300 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONOPP
封装: -
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IPD30N03S4L09ATMA1
Infineon Technologies

MOSFET N-CH 30V 30A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存144,219