Infineon Technologies 产品

FS400R07A3E3BOMA1

Infineon Technologies

IGBT MODULES

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

BSP295L6327HTSA1

Infineon Technologies

MOSFET N-CH 60V 1.8A SOT-223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 400µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 368pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

IRL2203NSTRRPBF

Infineon Technologies

MOSFET N-CH 30V 116A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 180W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF520NSPBF

Infineon Technologies

MOSFET N-CH 100V 9.7A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF3707ZSTRL

Infineon Technologies

MOSFET N-CH 30V 59A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 57W (Tc)
• Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 21A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPU60R600C6AKMA1

Infineon Technologies

MOSFET N-CH 600V 7.3A TO251

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 63W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251-3
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

IPD65R650CEATMA1

Infineon Technologies

MOSFET N-CH 650V 10.1A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 0.21mA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): 86W (Tc)
• Rds On (Max) @ Id, Vgs: 650 mOhm @ 2.1A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

BSO150N03MD G

Infineon Technologies

MOSFET 2N-CH 30V 8A 8DSO

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 9.3A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
• Power - Max: 1.4W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

封装: 8-SOIC (0.154", 3.90mm Width)

BFR 183W E6327

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
• Gain: 18.5dB
• Power - Max: 450mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
• Current - Collector (Ic) (Max): 65mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

封装: SC-70, SOT-323

111-4043PBF

Infineon Technologies

IC CTRL XPHASE3 VR11.0 32-MLPQ

• Applications: Processor
• Current - Supply: 6.5mA
• Voltage - Supply: 4.75 V ~ 7.5 V
• Operating Temperature: 0°C ~ 100°C
• Mounting Type: Surface Mount
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: 32-MLPQ (5x5)

封装: 32-VFQFN Exposed Pad

BTS5482SFXUMA2

Infineon Technologies

IC PWR SWITCH HISIDE PG-DSO-36

• Switch Type: General Purpose
• Number of Outputs: 4
• Ratio - Input:Output: 3:4
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 4.5 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Current - Output (Max): -
• Rds On (Typ): 4 mOhm, 15 mOhm
• Input Type: -
• Features: Slew Rate Controlled
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 36-BSSOP (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-36-43

封装: 36-BSSOP (0.295", 7.50mm Width)

AUIPS7145R

Infineon Technologies

IC SW IPS 1CH HIGH SIDE DPAK-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 6 V ~ 60 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.1A
• Rds On (Typ): 75 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Supplier Device Package: D-Pak

封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD

BTS716G

Infineon Technologies

SWITCH 4-CHAN HIGH SIDE P-DSO20

• Switch Type: General Purpose
• Number of Outputs: 4
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5.5 V ~ 40 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.3A
• Rds On (Typ): 110 mOhm
• Input Type: Non-Inverting
• Features: Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-20

封装: 20-SOIC (0.295", 7.50mm Width)

TLE82092SAAUMA1

Infineon Technologies

IC MOTOR DRIVER SPI 20DSO

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushless DC (BLDC) Servo, Brushed DC Servo
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: SPI
• Technology: Power MOSFET
• Step Resolution: -
• Applications: Automotive
• Current - Output: 8.6A
• Voltage - Supply: 4.4 V ~ 5.25 V
• Voltage - Load: 4.5 V ~ 28 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-20-65

封装: 20-SOIC (0.433", 11.00mm Width) Exposed Pad

IR2302STRPBF

Infineon Technologies

IC DVR HALF BRIDGE 8-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 5 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.9V
• Current - Peak Output (Source, Sink): 200mA, 350mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 130ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

SAF-XE164H-24F66L AC

Infineon Technologies

IC MCU 16BIT 192KB FLASH 100LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 66MHz
• Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 75
• Program Memory Size: 192KB (192K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 24K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: 100-LQFP (14x14)

封装: 100-LQFP Exposed Pad

C161PILFCAFXUMA1

Infineon Technologies

IC MCU 16BIT ROMLESS 100TQFP

• Core Processor: C166
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: EBI/EMI, I2C, SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 76
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 3K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

SLE 4432 M3.2

Infineon Technologies

IC EEPROM 256BYTE M3.2 PKG

• Applications: Security
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: -
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: M3.2 Chip Card Module
• Supplier Device Package: M3.2 Chip Card Module

封装: M3.2 Chip Card Module

TLE9867QXA20XUMA2

Infineon Technologies

IC SOC MOTOR DRIVER 48VQFN

• Applications: Automotive
• Core Processor: ARM? Cortex?-M3
• Program Memory Type: FLASH (64 kB)
• Controller Series: -
• RAM Size: 6K x 8
• Interface: LIN, SSI, UART
• Number of I/O: 10
• Voltage - Supply: 5.5 V ~ 28 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

SLB9665TT20FW500XUMA2

Infineon Technologies

SECURITY IC'S/AUTHENTICATION IC'

• Applications: Embedded Security Trusted Computing
• Core Processor: 16-Bit
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: LPC
• Number of I/O: 1
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -20°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: PG-TSSOP-28-2

封装: 28-TSSOP (0.173", 4.40mm Width)

SLE66R04SMCC8ZZZA1

Infineon Technologies

IC MEMORY CHIP MCC8-2

• Type: RFID Transponder
• Frequency: 13.56MHz
• Standards: ISO 14443
• Interface: -
• Voltage - Supply: -
• Operating Temperature: -
• Package / Case: MCC8 Chip Card Module
• Supplier Device Package: -

封装: MCC8 Chip Card Module

IMC099TT038XUMA1

Infineon Technologies

IC MOTOR CONTROL TSSOP-38

• Motor Type - Stepper: -
• Motor Type - AC, DC: AC, Synchronous
• Function: Controller
• Output Configuration: -
• Interface: Analog, PWM
• Technology: -
• Step Resolution: -
• Applications: Home Appliance
• Current - Output: 50mA
• Voltage - Supply: 3V ~ 5.5V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 38-TFSOP (0.173", 4.40mm Width)
• Supplier Device Package: PG-TSSOP-38-9

封装: 38-TFSOP (0.173", 4.40mm Width)

KX164CS16F40FBB

Infineon Technologies

LEGACY 16-BIT MCU

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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D1821SH45TS05XOSA1

Infineon Technologies

DIODE GP 4.5KV 1710A D10026K-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4500 V
• Current - Average Rectified (Io): 1710A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200, Variant
• Supplier Device Package: BG-D10026K-1
• Operating Temperature - Junction: -

封装: -

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CY25482SXI-013

Infineon Technologies

IC

• Type: Spread Spectrum Clock Generator
• PLL: Yes
• Input: LVCMOS, Crystal
• Output: Clock
• Number of Circuits: 1
• Ratio - Input:Output: 1:3
• Differential - Input:Output: No/No
• Frequency - Max: 166MHz
• Divider/Multiplier: Yes/No
• Voltage - Supply: 2.25V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: -

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CY15V104QSN-108LPXIT

Infineon Technologies

IC FRAM 4MBIT SPI/QUAD 8GQFN

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 4Mbit
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 108 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.71V ~ 1.89V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UQFN
• Supplier Device Package: 8-GQFN (3.23x3.28)

封装: -

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CY95F636KNWQN-G-UNE1

Infineon Technologies

IC MCU 8BIT 36KB FLASH 24BGA

• Core Processor: F²MC-8FX
• Core Size: 8-Bit
• Speed: 16.25MHz
• Connectivity: I2C, LINbus, SIO, UART/USART
• Peripherals: LVD, POR, PWM, WDT
• Number of I/O: 25
• Program Memory Size: 36KB (36K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 1K x 8
• Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
• Data Converters: A/D 8x8/10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-BGA (8x6)

封装: -

SLE-66C168PE-MFC5-8

Infineon Technologies

IC SECURITY CTRLR 8/16BIT MFC5.8

• Applications: -
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: -
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: S-MFC5.8-8-1
• Supplier Device Package: S-MFC5.8-8

封装: -

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IRF7555TR

Infineon Technologies

MOSFET 2P-CH 20V 4.3A MICRO8

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.3A
• Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V
• Power - Max: 1.25W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: Micro8™

封装: -

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IPI052NE7N3G

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.8V @ 91µA
• Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

封装: -

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