|
|
Infineon Technologies |
IGBT 600V 17A 45W TO220FP
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 17A
- Current - Collector Pulsed (Icm): 34A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
- Power - Max: 45W
- Switching Energy: 600µJ (on), 580µJ (off)
- Input Type: Standard
- Gate Charge: 67nC
- Td (on/off) @ 25°C: 60ns/160ns
- Test Condition: 480V, 16A, 23 Ohm, 15V
- Reverse Recovery Time (trr): 42ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220AB Full-Pak
|
封装: TO-220-3 Full Pack |
库存54,000 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9575pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 106A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,168 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 59A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,816 |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 162A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存108,408 |
|
|
|
Infineon Technologies |
MOSFET P-CH 30V 20A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存334,548 |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 50A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 50A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 50A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
|
封装: Die |
库存6,960 |
|
|
|
Infineon Technologies |
IC REG LIN 3.3V 400MA SOT223-4
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.2V @ 300mA
- Current - Output: 400mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 220µA ~ 30mA
- PSRR: 60dB (100Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
|
封装: TO-261-4, TO-261AA |
库存26,298 |
|
|
|
Infineon Technologies |
IC SWITCH CTRLR 10/100 128-FQFP
- Protocol: -
- Function: -
- Interface: -
- Standards: -
- Voltage - Supply: 2.8 V ~ 3.465 V
- Current - Supply: -
- Operating Temperature: 0°C ~ 115°C
- Package / Case: 128-BFQFP
- Supplier Device Package: PG-BFQFP-128
|
封装: 128-BFQFP |
库存4,880 |
|
|
|
Infineon Technologies |
IC MCU 16BIT 192KB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 80MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 75
- Program Memory Size: 192KB (192K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 26K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 11x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-100-8
|
封装: 100-LQFP Exposed Pad |
库存4,320 |
|
|
|
Infineon Technologies |
IC MCU 16BIT 1MB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16/32-Bit
- Speed: 128MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: DMA, I2S, POR, PWM, WDT
- Number of I/O: 76
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 90K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-100-8
|
封装: 100-LQFP Exposed Pad |
库存6,096 |
|
|
|
Infineon Technologies |
IC REG LIN 2.5V 400MA SOT223-4
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 2.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 2V @ 300mA
- Current - Output: 400mA
- Current - Quiescent (Iq): 220µA
- Current - Supply (Max): 30mA
- PSRR: 60dB (100Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
|
封装: TO-261-4, TO-261AA |
库存3,584 |
|
|
|
Infineon Technologies |
MOSFET P-CH 40V 73A TO252-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-313
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
封装: - |
库存26,742 |
|
|
|
Infineon Technologies |
IC CLOCK GEN PROG 3.3V 16-TSSOP
- Type: Spread Spectrum Clock Generator
- PLL: Yes with Bypass
- Input: Clock, Crystal
- Output: Clock
- Number of Circuits: 1
- Ratio - Input:Output: 1:6
- Differential - Input:Output: No/No
- Frequency - Max: 200MHz
- Divider/Multiplier: Yes/No
- Voltage - Supply: 2.375V ~ 2.625V, 3.135V ~ 3.465V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
IGBT MODULE 1200V 380A
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 380 A
- Power - Max: 870 W
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 250A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-HYBRIDD-2
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
STD THYR/DIODEN DISC BG-T7526K-1
- Structure: -
- Number of SCRs, Diodes: -
- Voltage - Off State: -
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- Current - Hold (Ih) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
INFINEON
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
IC MCU 32BIT 1MB FLASH 68QFN
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 150MHz
- Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
- Number of I/O: 53
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 512K x 8
- Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
- Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 68-VFQFN Exposed Pad
- Supplier Device Package: 68-QFN (8x8)
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
- Number of I/O: 84
- Program Memory Size: 384KB (384K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
IC PSRAM 64MBIT HYPERBUS 24FBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 64Mbit
- Memory Interface: HyperBus
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
IC MCU 32BT 2.0625MB FLSH 100QFP
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 160MHz
- Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
- Number of I/O: 78
- Program Memory Size: 2.0625MB (2.0625M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 128K x 8
- RAM Size: 256K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 57x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x14)
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
IC FLASH 512MBIT HYPERBUS 24FBGA
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: HyperBus
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 1.7ms
- Access Time: 5.45 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
MULTI-MARKET MCUS
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit
- Speed: 40MHz
- Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
- Peripherals: DMA, LCD, LVD, POR, PWM, WDT
- Number of I/O: 51
- Program Memory Size: 96KB (96K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
- Data Converters: A/D 12x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-LQFP (12x12)
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
SCR MODULE 2800V 4600A DO200AE
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 2.8 kV
- Current - On State (It (AV)) (Max): 2400 A
- Current - On State (It (RMS)) (Max): 4600 A
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
- Current - Hold (Ih) (Max): 300 mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
IC MEMORY FLASH NOR
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
IGBT MOD 1200V 675A 2250W
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 675 A
- Power - Max: 2250 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
|
封装: - |
库存3 |
|
|
|
Infineon Technologies |
IC MCU 32BIT 2MB FLASH 128TQFP
- Core Processor: ARM® Cortex®-M4F
- Core Size: 32-Bit
- Speed: 150MHz
- Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
- Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
- Number of I/O: 102
- Program Memory Size: 2MB (2M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 1M x 8
- Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
- Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 128-LQFP
- Supplier Device Package: 128-TQFP (14x20)
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
IC FLASH 64MBIT PARALLEL 56TSOP
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR
- Memory Size: 64Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 60ns
- Access Time: 90 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 56-TSOP
|
封装: - |
Request a Quote |
|
|
|
Infineon Technologies |
MOSFET N-CH 80V 75A TO220-FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 155µA
- Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
|
封装: - |
库存1,008 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 37A/366A HSOG-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSMD, Gull Wing
|
封装: - |
库存2,289 |
|
|
|
Infineon Technologies |
MOSFET N-CH 500V 14.1A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Vgs(th) (Max) @ Id: 3.5V @ 260µA
- Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 73W (Tc)
- Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
|
封装: - |
Request a Quote |
|