Infineon Technologies 产品

SPP80N03S2-03

Infineon Technologies

MOSFET N-CH 30V 80A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

封装: TO-220-3

IRF7420PBF

Infineon Technologies

MOSFET P-CH 12V 11.5A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 3529pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

94-2113

Infineon Technologies

MOSFET N-CH 30V 116A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 180W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPI50R140CPXKSA1

Infineon Technologies

HIGH POWER_LEGACY

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

IRF6621TRPBF

Infineon Technologies

MOSFET N-CH 30V 12A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 55A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 12A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? SQ
• Package / Case: DirectFET? Isometric SQ

封装: DirectFET? Isometric SQ

IRLR3717TRPBF

Infineon Technologies

MOSFET N-CH 20V 120A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.45V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 89W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF8788TRPBF

Infineon Technologies

MOSFET N-CH 30V 24A 8-SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5720pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 24A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

IRFB4227PBF

Infineon Technologies

MOSFET N-CH 200V 65A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 330W (Tc)
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 46A, 10V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

BSO604NS2XUMA1

Infineon Technologies

MOSFET 2N-CH 55V 5A 8DSO

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 5A
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id: 2V @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: P-DSO-8

封装: 8-SOIC (0.154", 3.90mm Width)

TLE82642EXUMA3

Infineon Technologies

IC SYSTEM BASIS CHIP DSO-36

• Type: -
• Applications: -
• Mounting Type: Surface Mount
• Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-36

封装: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad

IR36021MTRPBF

Infineon Technologies

IC REG CTRLR BUCK PMBUS 32QFN

• Output Type: PWM Signal
• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Number of Outputs: 3
• Output Phases: 2
• Voltage - Supply (Vcc/Vdd): 3.3V
• Frequency - Switching: 200kHz ~ 2MHz
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: I2C, PMBus
• Control Features: Enable, Power Good
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: 32-MLPQ (5x5)

封装: 32-VFQFN Exposed Pad

IPS1031STRLPBF

Infineon Technologies

IC IPS SW LOW SIDE D2PAK

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 28V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3.3A
• Rds On (Typ): 40 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TLE6212XUMA1

Infineon Technologies

IC SENSOR FOR ABS/TC/ESC 64LQFP

• Type: Sensor Interface
• Input Type: Voltage
• Output Type: Voltage
• Interface: SPI
• Current - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: PG-LQFP-64

封装: 64-LQFP

TLE8457ALEXUMA1

Infineon Technologies

IC LIN TRANSCEIVER TSON-8

• Type: Transceiver
• Protocol: LIN
• Number of Drivers/Receivers: 1/1
• Duplex: -
• Receiver Hysteresis: 175mV
• Data Rate: -
• Voltage - Supply: 5V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

SAK-XE164KN-16F80L AA

Infineon Technologies

IC MCU 16BIT 128KB FLASH 100LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 75
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 18K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 11x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-8

封装: 100-LQFP Exposed Pad

XE167F48F66LACFXQMA1

Infineon Technologies

IC MCU 16BIT 384KB FLASH 144LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 66MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 118
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 34K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 24x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 144-LQFP Exposed Pad
• Supplier Device Package: 144-LQFP (20x20)

封装: 144-LQFP Exposed Pad

BGB 741L7ESD E6327

Infineon Technologies

IC AMP MMIC LNA TSLP7-1

• Frequency: 50MHz ~ 5.5GHz
• P1dB: -6.5dBm (0.2mW)
• Gain: 19.5dB
• Noise Figure: 1dB
• RF Type: Cellular, RKE, WiFi
• Voltage - Supply: 1.8 V ~ 4 V
• Current - Supply: 30mA
• Test Frequency: 1.5GHz
• Package / Case: 6-XFDFN Exposed Pad
• Supplier Device Package: TSLP-7-1

封装: 6-XFDFN Exposed Pad

T1620N65TOFXPSA1

Infineon Technologies

SCR MODULE 6500V 2530A DO200AE

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 6.5 kV
• Current - On State (It (AV)) (Max): 2290 A
• Current - On State (It (RMS)) (Max): 2530 A
• Voltage - Gate Trigger (Vgt) (Max): 2.5 V
• Current - Gate Trigger (Igt) (Max): 350 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 36000A @ 50Hz
• Current - Hold (Ih) (Max): 350 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: DO-200AE

封装: -

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IPA65R660CFDXKSA2

Infineon Technologies

MOSFET N-CH 700V 6A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 700 V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 27.8W (Tc)
• Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220 Full Pack
• Package / Case: TO-220-3 Full Pack

封装: -

CY27410LTXI-016T

Infineon Technologies

INFINEON

• Type: -
• PLL: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Divider/Multiplier: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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TT820N16KS20HPSA1

Infineon Technologies

THYR / DIODE MODULE DK

• Structure: -
• Number of SCRs, Diodes: -
• Voltage - Off State: -
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• Current - Hold (Ih) (Max): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -

封装: -

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SPI15N60CFD

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 750µA
• Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 156W (Tc)
• Rds On (Max) @ Id, Vgs: 330mOhm @ 9.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3-1
• Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

封装: -

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CY8C4148AZSS565XQLA1

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

封装: -

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IRSM505-065PATRAUMA1

Infineon Technologies

IC HALF BRIDGE DRIVER 2.6A SOP23

• Output Configuration: Half Bridge (3)
• Applications: AC Motors
• Interface: Logic, PWM
• Load Type: Inductive
• Technology: MOSFET (Metal Oxide)
• Rds On (Typ): 1Ohm LS, 1Ohm HS
• Current - Output / Channel: 2.6A
• Current - Peak Output: -
• Voltage - Supply: 13.5V ~ 16.5V
• Voltage - Load: 400V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: UVLO
• Mounting Type: Surface Mount
• Package / Case: 23-PowerSMD Module
• Supplier Device Package: PG-DIP-23-901/SOP 29x12F

封装: -

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CY7C65211A24LQXSTXUMA1

Infineon Technologies

USB-DATA

• Protocol: USB
• Function: Bridge, USB to I2C
• Interface: UART
• Standards: USB 2.0
• Voltage - Supply: 1.71V ~ 5.5V
• Current - Supply: 20mA
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: -
• Supplier Device Package: -

封装: -

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SGW25N120FKSA1

Infineon Technologies

IGBT 1200V 46A 313W TO247-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 46 A
• Current - Collector Pulsed (Icm): 84 A
• Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 25A
• Power - Max: 313 W
• Switching Energy: 3.7mJ
• Input Type: Standard
• Gate Charge: 225 nC
• Td (on/off) @ 25°C: 45ns/730ns
• Test Condition: 800V, 25A, 22Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-1

封装: -

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IRSM515-025DAAKMA1

Infineon Technologies

IC HALF BRIDGE DRIVER 1.5A 23DIP

• Output Configuration: Half Bridge (3)
• Applications: AC Motors
• Interface: Logic, PWM
• Load Type: Inductive
• Technology: MOSFET (Metal Oxide)
• Rds On (Typ): 3Ohm LS, 3Ohm HS
• Current - Output / Channel: 1.5A
• Current - Peak Output: -
• Voltage - Supply: 13.5V ~ 16.5V
• Voltage - Load: 400V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: UVLO
• Mounting Type: Through Hole
• Package / Case: 23-DIP Module (0.573", 14.55mm)
• Supplier Device Package: 23-DIP

封装: -

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BSZ0905PNSATMA1

Infineon Technologies

MOSFET P-CH 30V 40A TDSON-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 1.9V @ 105µA
• Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 15 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 69W (Ta)
• Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

封装: -

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FZ2400R12HP4PHPSA1

Infineon Technologies

IGBT MOD 1200V 3460A AGIHMB130-2

• IGBT Type: Trench
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 3460 A
• Power - Max: 12500 W
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 2.4kA
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: -
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-IHMB130-2

封装: -

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SIGC18T60NCX1SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 20 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 21ns/110ns
• Test Condition: 300V, 20A, 13Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封装: -

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