页 101 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
IRG4PH40KPBF	Infineon Technologies	IGBT 1200V 30A 160W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A Power - Max: 160W Switching Energy: 730µJ (on), 1.66mJ (off) Input Type: Standard Gate Charge: 94nC Td (on/off) @ 25°C: 30ns/200ns Test Condition: 960V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	封装: TO-247-3	库存5,664
IRG7U200HF12B	Infineon Technologies	MOD IGBT 1200V 200A POWIR 62 IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 400A Power - Max: 1130W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A Current - Collector Cutoff (Max): 2mA Input Capacitance (Cies) @ Vce: 20nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: POWIR? 62 Module Supplier Device Package: POWIR? 62	封装: POWIR? 62 Module	库存7,248
BSC059N03ST	Infineon Technologies	MOSFET N-CH 30V 50A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TDSON-8 Package / Case: 8-PowerVDFN	封装: 8-PowerVDFN	库存4,960
IRF7807VPBF	Infineon Technologies	MOSFET N-CH 30V 8.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,920
IRF7483MTRPBF	Infineon Technologies	MOSFET N-CH 40V 135A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3913pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 81A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DirectFET? Isometric MF Package / Case: DirectFET? Isometric MF	封装: DirectFET? Isometric MF	库存7,744
IRFS7437TRLPBF	Infineon Technologies	MOSFET N CH 40V 195A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.9V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存14,772
IRFP250NPBF	Infineon Technologies	MOSFET N-CH 200V 30A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2159pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	封装: TO-247-3	库存164,928
BSS126H6327XTSA2	Infineon Technologies	MOSFET N-CH 600V 0.021A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	封装: TO-236-3, SC-59, SOT-23-3	库存81,972
IPB042N10N3 G	Infineon Technologies	MOSFET N-CH 100V 100A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存45,102
BCR116E6433HTMA1	Infineon Technologies	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封装: TO-236-3, SC-59, SOT-23-3	库存5,920
SIDC56D120E6	Infineon Technologies	DIODE GEN PURP 1.2KV 75A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 75A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 75A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封装: Die	库存3,456
IDH08G120C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 1200V 8A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.95V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 40µA @ 1200V Capacitance @ Vr, F: 365pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存8,172
IRS27951STRPBF	Infineon Technologies	IC REG CTRLR BUCK/HALF-BRG 8SOIC Output Type: Transistor Driver Function: Step-Down, Step-Up/Step-Down Output Configuration: Positive, Isolation Capable Topology: Buck, Half-Bridge Number of Outputs: 2 Output Phases: 2 Voltage - Supply (Vcc/Vdd): 12 V ~ 18 V Frequency - Switching: Up to 500kHz Duty Cycle (Max): 50% Synchronous Rectifier: Yes Clock Sync: No Serial Interfaces: - Control Features: Enable, Frequency Control Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,472
IRS25801DSTRPBF	Infineon Technologies	IC POWER FACTOR CORRECT PFC Mode: - Frequency - Switching: - Current - Startup: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,304
TLV49613TAXBXA1	Infineon Technologies	MAGNETIC SWITCH LATCH TO92-3 Function: Latch Technology: Hall Effect Polarization: South Pole Sensing Range: 7.5mT Trip, -7.5mT Release Test Condition: 25°C Voltage - Supply: 3 V ~ 26 V Current - Supply (Max): 2.5mA Current - Output (Max): 25mA Output Type: Open Drain Features: Temperature Compensated Operating Temperature: -40°C ~ 125°C (TA) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA)	库存5,544
PVG612S-T	Infineon Technologies	IC RELAY PHOTOVO 60V 1A 6-SMD Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 500 mOhm Load Current: 1A Voltage - Input: 1.2VDC Voltage - Load: 0 ~ 60 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 6-SMD (0.300", 7.62mm) Supplier Device Package: 6-SMT Relay Type: Relay	封装: 6-SMD (0.300", 7.62mm)	库存12,072
1ED44175N01BXTSA1	Infineon Technologies	IC GATE DRVR LOW-SIDE SOT23-6 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 12.7V ~ 20V Logic Voltage - VIL, VIH: 1.2V, 1.9V Current - Peak Output (Source, Sink): 2.6A, 2.6A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 5ns, 5ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: PG-SOT23-6-3	封装: -	库存10,362
CY9AF314MPMC-G-MJE1	Infineon Technologies	IC MM MCU 64LQFP Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 40MHz Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 66 Program Memory Size: 256KB (256K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 12x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-LQFP (12x12)	封装: -	库存3,570
BSC084P03NS3GATMA1	Infineon Technologies	MOSFET P-CH 30V 14.9A 8TDSON FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.1V @ 105µA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	封装: -	库存26,904
AIMBG120R120M1XTMA1	Infineon Technologies	SIC_DISCRETE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote
IRU3073CQTR	Infineon Technologies	IC CTRLR PWM W/REG LDO 16-QSOP Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1) Function: - Number of Outputs: 2 Frequency - Switching: 210kHz ~ 400kHz Voltage/Current - Output 1: Controller Voltage/Current - Output 2: 0.8V ~ 22.5V, 65mA Voltage/Current - Output 3: - w/LED Driver: No w/Supervisor: No w/Sequencer: Yes Voltage - Supply: 4.4V ~ 25V Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 16-SSOP (0.154", 3.90mm Width) Supplier Device Package: 16-QSOP	封装: -	Request a Quote
T740N26TOFXPSA1	Infineon Technologies	SCR MODULE 2600V 1500A DO200AB Structure: Single Number of SCRs, Diodes: 1 SCR Voltage - Off State: 2.6 kV Current - On State (It (AV)) (Max): 745 A Current - On State (It (RMS)) (Max): 1500 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz Current - Hold (Ih) (Max): 300 mA Operating Temperature: -40°C ~ 125°C Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK	封装: -	Request a Quote
S25FL512SDSBHBC10	Infineon Technologies	IC FLASH 512MBIT SPI/QUAD 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 80 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (8x6)	封装: -	Request a Quote
CYT2B63BADQ0AZEGS	Infineon Technologies	IC MCU 32BIT 576KB FLASH 64LQFP Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Core Size: 32-Bit Dual-Core Speed: 80MHz Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Number of I/O: 49 Program Memory Size: 576KB (576K x 8) Program Memory Type: FLASH EEPROM Size: 64K x 8 RAM Size: 64K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 22x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	封装: -	库存4,644
CY8C6247FDI-D02T	Infineon Technologies	IC MCU 32BIT 1MB FLASH 80WLCSP Core Processor: ARM® Cortex®-M4/M0 Core Size: 32-Bit Dual-Core Speed: 100MHz, 150MHz Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, WDT Number of I/O: 62 Program Memory Size: 1MB (1M x 8) Program Memory Type: FLASH EEPROM Size: 32K x 8 RAM Size: 288K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b, 1x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 80-XFBGA, WLCSP Supplier Device Package: 80-WLCSP (3.68x3.19)	封装: -	库存5,994
IPTG017N12NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 3.6V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 395W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOG-8-1 Package / Case: 8-PowerSMD, Gull Wing	封装: -	Request a Quote
IPD034N06N3GATMA1	Infineon Technologies	MOSFET N-CH 60V 100A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存21,240
CY95F011HNPMC-G101UN-YE2	Infineon Technologies	MULTI-MARKET MCUS Core Processor: - Core Size: - Speed: - Connectivity: - Peripherals: - Number of I/O: - Program Memory Size: - Program Memory Type: - EEPROM Size: - RAM Size: - Voltage - Supply (Vcc/Vdd): - Data Converters: - Oscillator Type: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,570
CY8C4149AZI-S548	Infineon Technologies	IC MCU 32BIT 384KB FLASH 64LQFP Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 48MHz Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT Number of I/O: 84 Program Memory Size: 384KB (384K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	封装: -	Request a Quote
CY9AF111LAPMC1-G-105NE2	Infineon Technologies	IC MCU 32BIT 64KB FLASH 64LQFP Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Single-Core Speed: 40MHz Connectivity: CSIO, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 51 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 9x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	封装: -	Request a Quote

IRG4PH40KPBF

Infineon Technologies

IGBT 1200V 30A 160W TO247AC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Power - Max: 160W
Switching Energy: 730µJ (on), 1.66mJ (off)
Input Type: Standard
Gate Charge: 94nC
Td (on/off) @ 25°C: 30ns/200ns
Test Condition: 960V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

封装: TO-247-3

库存5,664

IRG7U200HF12B

Infineon Technologies

MOD IGBT 1200V 200A POWIR 62

IGBT Type: -
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 400A
Power - Max: 1130W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 20nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR? 62 Module
Supplier Device Package: POWIR? 62

封装: POWIR? 62 Module

库存7,248

BSC059N03ST

Infineon Technologies

MOSFET N-CH 30V 50A TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: P-TDSON-8
Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

库存4,960

IRF7807VPBF

Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,920

IRF7483MTRPBF

Infineon Technologies

MOSFET N-CH 40V 135A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3913pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 81A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DirectFET? Isometric MF
Package / Case: DirectFET? Isometric MF

封装: DirectFET? Isometric MF

库存7,744

IRFS7437TRLPBF

Infineon Technologies

MOSFET N CH 40V 195A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AB
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存14,772

IRFP250NPBF

Infineon Technologies

MOSFET N-CH 200V 30A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2159pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 75 mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

封装: TO-247-3

库存164,928

BSS126H6327XTSA2

Infineon Technologies

MOSFET N-CH 600V 0.021A SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs(th) (Max) @ Id: 1.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 25V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存81,972

IPB042N10N3 G

Infineon Technologies

MOSFET N-CH 100V 100A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存45,102

BCR116E6433HTMA1

Infineon Technologies

TRANS PREBIAS NPN 200MW SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

库存5,920

SIDC56D120E6

Infineon Technologies

DIODE GEN PURP 1.2KV 75A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 75A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 75A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封装: Die

库存3,456

IDH08G120C5XKSA1

Infineon Technologies

DIODE SCHOTTKY 1200V 8A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.95V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 40µA @ 1200V
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存8,172

IRS27951STRPBF

Infineon Technologies

IC REG CTRLR BUCK/HALF-BRG 8SOIC

Output Type: Transistor Driver
Function: Step-Down, Step-Up/Step-Down
Output Configuration: Positive, Isolation Capable
Topology: Buck, Half-Bridge
Number of Outputs: 2
Output Phases: 2
Voltage - Supply (Vcc/Vdd): 12 V ~ 18 V
Frequency - Switching: Up to 500kHz
Duty Cycle (Max): 50%
Synchronous Rectifier: Yes
Clock Sync: No
Serial Interfaces: -
Control Features: Enable, Frequency Control
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,472

IRS25801DSTRPBF

Infineon Technologies

IC POWER FACTOR CORRECT PFC

Mode: -
Frequency - Switching: -
Current - Startup: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,304

TLV49613TAXBXA1

Infineon Technologies

MAGNETIC SWITCH LATCH TO92-3

Function: Latch
Technology: Hall Effect
Polarization: South Pole
Sensing Range: 7.5mT Trip, -7.5mT Release
Test Condition: 25°C
Voltage - Supply: 3 V ~ 26 V
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Output Type: Open Drain
Features: Temperature Compensated
Operating Temperature: -40°C ~ 125°C (TA)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA)

库存5,544

PVG612S-T

Infineon Technologies

IC RELAY PHOTOVO 60V 1A 6-SMD

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 500 mOhm
Load Current: 1A
Voltage - Input: 1.2VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 6-SMD (0.300", 7.62mm)
Supplier Device Package: 6-SMT
Relay Type: Relay

封装: 6-SMD (0.300", 7.62mm)

库存12,072

1ED44175N01BXTSA1

Infineon Technologies

IC GATE DRVR LOW-SIDE SOT23-6

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 12.7V ~ 20V
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 5ns, 5ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: PG-SOT23-6-3

封装: -

库存10,362

CY9AF314MPMC-G-MJE1

Infineon Technologies

IC MM MCU 64LQFP

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 40MHz
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 66
Program Memory Size: 256KB (256K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 12x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-LQFP (12x12)

封装: -

库存3,570

BSC084P03NS3GATMA1

Infineon Technologies

MOSFET P-CH 30V 14.9A 8TDSON

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-5
Package / Case: 8-PowerTDFN

封装: -

库存26,904

AIMBG120R120M1XTMA1

Infineon Technologies

SIC_DISCRETE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

IRU3073CQTR

Infineon Technologies

IC CTRLR PWM W/REG LDO 16-QSOP

Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Function: -
Number of Outputs: 2
Frequency - Switching: 210kHz ~ 400kHz
Voltage/Current - Output 1: Controller
Voltage/Current - Output 2: 0.8V ~ 22.5V, 65mA
Voltage/Current - Output 3: -
w/LED Driver: No
w/Supervisor: No
w/Sequencer: Yes
Voltage - Supply: 4.4V ~ 25V
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Supplier Device Package: 16-QSOP

封装: -

Request a Quote

T740N26TOFXPSA1

Infineon Technologies

SCR MODULE 2600V 1500A DO200AB

Structure: Single
Number of SCRs, Diodes: 1 SCR
Voltage - Off State: 2.6 kV
Current - On State (It (AV)) (Max): 745 A
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK

封装: -

Request a Quote

S25FL512SDSBHBC10

Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 80 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)

封装: -

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CYT2B63BADQ0AZEGS

Infineon Technologies

IC MCU 32BIT 576KB FLASH 64LQFP

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Core Size: 32-Bit Dual-Core
Speed: 80MHz
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Number of I/O: 49
Program Memory Size: 576KB (576K x 8)
Program Memory Type: FLASH
EEPROM Size: 64K x 8
RAM Size: 64K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 22x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

封装: -

库存4,644

CY8C6247FDI-D02T

Infineon Technologies

IC MCU 32BIT 1MB FLASH 80WLCSP

Core Processor: ARM® Cortex®-M4/M0
Core Size: 32-Bit Dual-Core
Speed: 100MHz, 150MHz
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, WDT
Number of I/O: 62
Program Memory Size: 1MB (1M x 8)
Program Memory Type: FLASH
EEPROM Size: 32K x 8
RAM Size: 288K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b, 1x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-XFBGA, WLCSP
Supplier Device Package: 80-WLCSP (3.68x3.19)

封装: -

库存5,994

IPTG017N12NM6ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOG-8-1
Package / Case: 8-PowerSMD, Gull Wing

封装: -

Request a Quote

IPD034N06N3GATMA1

Infineon Technologies

MOSFET N-CH 60V 100A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存21,240

CY95F011HNPMC-G101UN-YE2

Infineon Technologies

MULTI-MARKET MCUS

Core Processor: -
Core Size: -
Speed: -
Connectivity: -
Peripherals: -
Number of I/O: -
Program Memory Size: -
Program Memory Type: -
EEPROM Size: -
RAM Size: -
Voltage - Supply (Vcc/Vdd): -
Data Converters: -
Oscillator Type: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,570

CY8C4149AZI-S548

Infineon Technologies

IC MCU 32BIT 384KB FLASH 64LQFP

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 48MHz
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
Number of I/O: 84
Program Memory Size: 384KB (384K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

封装: -

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CY9AF111LAPMC1-G-105NE2

Infineon Technologies

IC MCU 32BIT 64KB FLASH 64LQFP

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit Single-Core
Speed: 40MHz
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 51
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 9x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

封装: -

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