图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8
|
封装: 8-PowerTDFN |
库存4,912 |
|
MOSFET (Metal Oxide) | 30V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 93nC @ 10V | 7200pF @ 15V | ±20V | - | 2.5W (Ta), 96W (Tc) | 2 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 40V 70A TO220-3
|
封装: TO-220-3 |
库存6,976 |
|
MOSFET (Metal Oxide) | 40V | 70A (Tc) | 10V | 4V @ 200µA | 41nC @ 10V | 3300pF @ 25V | ±20V | - | 79W (Tc) | 4.8 mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 51A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,924 |
|
MOSFET (Metal Oxide) | 55V | 51A (Tc) | 10V | 4V @ 250µA | 46nC @ 10V | 1460pF @ 25V | ±20V | - | 82W (Tc) | 13.6 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 25V 33A TDSON-8
|
封装: 8-PowerTDFN |
库存4,048 |
|
MOSFET (Metal Oxide) | 25V | 33A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 30nC @ 10V | 2000pF @ 12V | ±16V | - | 2.5W (Ta), 50W (Tc) | 1.5 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3-1
|
封装: TO-220-3 |
库存2,416 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 53µA | 66nC @ 10V | 5260pF @ 25V | ±20V | - | 94W (Tc) | 3.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 50A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,880 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 2.5V @ 100µA | 49nC @ 4.5V | 3779pF @ 50V | ±16V | - | 143W (Tc) | 6.8 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 55V 80A TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,792 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 2V @ 93µA | 80nC @ 10V | 2075pF @ 25V | ±20V | - | 158W (Tc) | 10.7 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 100V 4.5A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存6,304 |
|
MOSFET (Metal Oxide) | 100V | 4.5A (Ta) | 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | ±30V | - | 2.5W (Ta) | 60 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 650V 6A TO252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,616 |
|
MOSFET (Metal Oxide) | 650V | 6A (Tc) | 10V | 4.5V @ 200µA | 22nC @ 10V | 615pF @ 100V | ±20V | - | 62.5W (Tc) | 660 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 650V 6A TO252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,208 |
|
MOSFET (Metal Oxide) | 650V | 6A (Tc) | 10V | 4.5V @ 200µA | 22nC @ 10V | 615pF @ 100V | ±20V | - | 62.5W (Tc) | 660 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3
|
封装: TO-220-3 |
库存3,600 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 2V @ 125µA | 105nC @ 10V | 2620pF @ 25V | ±20V | - | 190W (Tc) | 8.5 mOhm @ 52A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 600V TO-252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,816 |
|
MOSFET (Metal Oxide) | 600V | 3.1A (Tc) | 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | ±20V | - | 28W (Tc) | 1.5 Ohm @ 1.1A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 60V 80A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,944 |
|
MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 4V @ 40µA | 56nC @ 10V | 4500pF @ 25V | ±20V | - | 79W (Tc) | - | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 30V 80A TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存4,752 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 130µA | 80nC @ 10V | 5700pF @ 25V | +5V, -16V | - | 88W (Tc) | 7.2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET P-CH 30V 80A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,872 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 130µA | 80nC @ 10V | 5700pF @ 25V | +5V, -16V | - | 88W (Tc) | 6.9 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 40V 70A TO220-3-1
|
封装: TO-220-3 |
库存4,368 |
|
MOSFET (Metal Oxide) | 40V | 70A (Tc) | 10V | 4V @ 26µA | 32nC @ 10V | 2550pF @ 25V | ±20V | - | 58W (Tc) | 6.5 mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
LOW POWER_LEGACY
|
封装: - |
库存2,544 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 650V 7.3A TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,048 |
|
MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | ±20V | - | 63W (Tc) | 600 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 650V 7.3A TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,552 |
|
MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | ±20V | - | 63W (Tc) | 600 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 8TDSON
|
封装: 8-PowerVDFN |
库存5,024 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 60µA | 71nC @ 10V | 5720pF @ 25V | ±20V | - | 100W (Tc) | 3.3 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-23 | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 100V 32A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存6,736 |
|
MOSFET (Metal Oxide) | 100V | 32A (Tc) | 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | ±20V | - | 130W (Tc) | 44 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
CONSUMER
|
封装: - |
库存3,632 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET P-CH TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,312 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 2.2V @ 150µA | 104nC @ 10V | 6580pF @ 25V | +5V, -16V | - | 88W (Tc) | 6.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET P-CH TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存6,416 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 150µA | 89nC @ 10V | 6085pF @ 25V | ±20V | - | 88W (Tc) | 7.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET P-CH TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,216 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 2.2V @ 150µA | 104nC @ 10V | 6580pF @ 25V | ±16V | - | 88W (Tc) | 6.4 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,984 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 150µA | 89nC @ 10V | 6085pF @ 25V | ±20V | - | 88W (Tc) | 7.4 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 19A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存537,672 |
|
MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 2.25V @ 250µA | 44nC @ 4.5V | 3710pF @ 15V | ±20V | - | 2.5W (Ta) | 4.5 mOhm @ 19A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 600V 5.7A TO220
|
封装: TO-220-3 |
库存2,480 |
|
MOSFET (Metal Oxide) | 600V | 5.7A (Tc) | 10V | 3.5V @ 170µA | 17.2nC @ 10V | 373pF @ 100V | ±20V | - | 48W (Tc) | 750 mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 5.9A DIRECTFET
|
封装: DirectFET? Isometric SC |
库存7,264 |
|
MOSFET (Metal Oxide) | 100V | 5.9A (Ta), 24A (Tc) | 10V | 5V @ 50µA | 21nC @ 10V | 910pF @ 25V | ±20V | - | 2.5W (Ta), 41W (Tc) | 31 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET? SC | DirectFET? Isometric SC |
||
Infineon Technologies |
MOSFET N-CH 12V 84A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,432 |
|
MOSFET (Metal Oxide) | 12V | 84A (Tc) | 2.8V, 4.5V | 1.9V @ 250µA | 41nC @ 5V | 2490pF @ 6V | ±12V | - | 88W (Tc) | 8.5 mOhm @ 15A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |