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IXYS |
IGBT 600V 75A 300W TO264
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
- Power - Max: 300W
- Switching Energy: 3.3mJ (off)
- Input Type: Standard
- Gate Charge: 167nC
- Td (on/off) @ 25°C: 70ns/150ns
- Test Condition: 480V, 50A, 2.7 Ohm, 15V
- Reverse Recovery Time (trr): 50ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264AA(IXSK)
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封装: TO-264-3, TO-264AA |
库存6,880 |
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IXYS |
IGBT 330V 90A 200W TO3P
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 330V
- Current - Collector (Ic) (Max): 90A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 45A
- Power - Max: 200W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 69nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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封装: TO-3P-3, SC-65-3 |
库存5,712 |
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IXYS |
IGBT 600V 66A 190W TO247AD
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 66A
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A
- Power - Max: 190W
- Switching Energy: 340µJ (on), 650µJ (off)
- Input Type: Standard
- Gate Charge: 62nC
- Td (on/off) @ 25°C: 19ns/125ns
- Test Condition: 400V, 24A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 25ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存422,328 |
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IXYS |
MODULE IGBT CBI E1
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 11A
- Power - Max: 50W
- Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 10A
- Current - Collector Cutoff (Max): 65µA
- Input Capacitance (Cies) @ Vce: 0.22nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E1
- Supplier Device Package: E1
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封装: E1 |
库存3,584 |
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IXYS |
MOSFET N-CH 100V 280A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 280A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 440nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 770W (Tc)
- Rds On (Max) @ Id, Vgs: 5 mOhm @ 140A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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封装: SOT-227-4, miniBLOC |
库存5,168 |
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IXYS |
MOSFET N-CH 85V 152A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存6,976 |
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IXYS |
MOSFET N-CH 500V 80A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 80A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 890W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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封装: SOT-227-4, miniBLOC |
库存5,328 |
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IXYS |
MOSFET N-CH 40V 500A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 405nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 25000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1000W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存7,040 |
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IXYS |
MOSFET N-CH 500V 21A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 280W (Tc)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 10.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存5,248 |
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IXYS |
MOSFET N-CH TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 660W (Tc)
- Rds On (Max) @ Id, Vgs: 420 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存6,528 |
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IXYS |
MOSFET N-CH 900V 56A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 56A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1000W (Tc)
- Rds On (Max) @ Id, Vgs: 135 mOhm @ 28A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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封装: SOT-227-4, miniBLOC |
库存78,384 |
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IXYS |
MOSFET 2N-CH 600V 47A ISOPLUS264
- FET Type: 2 N-Channel (Dual)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 47A
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
- Power - Max: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUS264?
- Supplier Device Package: ISOPLUS264?
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封装: ISOPLUS264? |
库存3,200 |
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IXYS |
DIODE AVALANCHE 1.2KV 25A DO203
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA
- Operating Temperature - Junction: -40°C ~ 180°C
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封装: DO-203AA, DO-4, Stud |
库存7,600 |
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IXYS |
DIODE GEN PURP 1.4KV 60A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 230ns
- Current - Reverse Leakage @ Vr: 200µA @ 1200V
- Capacitance @ Vr, F: 32pF @ 1200V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 150°C
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封装: TO-247-2 |
库存17,892 |
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IXYS |
DIODE ARRAY 600V 30A ISOPLUS247
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.48V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
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封装: ISOPLUS247? |
库存4,576 |
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IXYS |
RECT BRIDGE 3PH 58A 1400V FO-F-B
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1400V
- Current - Average Rectified (Io): 58A
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 150A
- Current - Reverse Leakage @ Vr: 300µA @ 1400V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-F-B
- Supplier Device Package: FO-F-B
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封装: FO-F-B |
库存6,288 |
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IXYS |
RECT BRIDGE 3PH 25A 1600V FO-B
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 2.2V @ 150A
- Current - Reverse Leakage @ Vr: 300µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 5-Square, FO-B
- Supplier Device Package: PWS-E1
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封装: 5-Square, FO-B |
库存4,272 |
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IXYS |
IC GATE DRIVER SGL 9A 6-DFN
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 9A, 9A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 23ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: 6-DFN (4x5)
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封装: 6-VDFN Exposed Pad |
库存3,312 |
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IXYS |
IC GATE DRIVER DUAL 2A 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 7.5ns, 6.5ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存37,236 |
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IXYS |
IC DIODE MODULE BOD 0.2A 1900V
- Voltage - Clamping: 1900V (1.9kV)
- Technology: Mixed Technology
- Number of Circuits: 2
- Number of Circuits: 2
- Applications: High Voltage
- Mounting Type: PCB, Through Hole
- Package / Case: Radial
- Supplier Device Package: BOD
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封装: Radial |
库存3,726 |
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IXYS |
IC MOSF DRIVER
- Applications: Transformer Driver
- Current - Supply: 1mA
- Voltage - Supply: 14 V ~ 15.5 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 28-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 28-TSSOP
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封装: 28-TSSOP (0.173", 4.40mm Width) |
库存6,112 |
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IXYS |
POWER MOSFET TO-3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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封装: - |
Request a Quote |
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IXYS |
IGBT 2500V 29A TO247HV
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 2500 V
- Current - Collector (Ic) (Max): 29 A
- Current - Collector Pulsed (Icm): 70 A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
- Power - Max: 280 W
- Switching Energy: 2.6mJ (on), 1.07mJ (off)
- Input Type: Standard
- Gate Charge: 45 nC
- Td (on/off) @ 25°C: 11ns/180ns
- Test Condition: 1250V, 8A, 15Ohm, 15V
- Reverse Recovery Time (trr): 5 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: TO-247HV
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封装: - |
库存9 |
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IXYS |
MOSFET N-CH 100V 67A TO204AE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-204AE
- Package / Case: TO-204AE
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封装: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 800V 10A TO252AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Operating Temperature - Junction: -55°C ~ 175°C
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封装: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 1.6KV 80A TO247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 80A
- Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 80 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
- Capacitance @ Vr, F: 43pF @ 400V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
- Operating Temperature - Junction: -55°C ~ 150°C
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封装: - |
库存102 |
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IXYS |
DIODE GEN PURP 600V 15A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 600 V
- Capacitance @ Vr, F: 12pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2PAK)
- Operating Temperature - Junction: -55°C ~ 175°C
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封装: - |
Request a Quote |
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IXYS |
MOSFET ULTRA JCT 600V 98A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 49A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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封装: - |
Request a Quote |
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IXYS |
IGBT 650V 150A SOT227B
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 360 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
- Power - Max: 600 W
- Switching Energy: 2mJ (on), 950µJ (off)
- Input Type: Standard
- Gate Charge: 122 nC
- Td (on/off) @ 25°C: 26ns/93ns
- Test Condition: 400V, 60A, 3Ohm, 15V
- Reverse Recovery Time (trr): 65 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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封装: - |
Request a Quote |
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IXYS |
BIPOLAR MODULE - THYRISTOR Y4-M
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 2.2 kV
- Current - On State (It (AV)) (Max): 220 A
- Current - On State (It (RMS)) (Max): 345 A
- Voltage - Gate Trigger (Vgt) (Max): 2 V
- Current - Gate Trigger (Igt) (Max): 150 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A, 7780A
- Current - Hold (Ih) (Max): 200 mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
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封装: - |
库存15 |
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