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IXYS |
IGBT 1000V 50A 200W TO247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1000V
- Current - Collector (Ic) (Max): 50A
- Current - Collector Pulsed (Icm): 100A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
- Power - Max: 200W
- Switching Energy: 5mJ (off)
- Input Type: Standard
- Gate Charge: 130nC
- Td (on/off) @ 25°C: 100ns/500ns
- Test Condition: 800V, 25A, 33 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存117,912 |
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IXYS |
IGBT 650V 30A 160W TO220
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 30A
- Current - Collector Pulsed (Icm): 54A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: 160W
- Switching Energy: 240µJ (on), 110µJ (off)
- Input Type: Standard
- Gate Charge: 18nC
- Td (on/off) @ 25°C: 20ns/77ns
- Test Condition: 400V, 10A, 50 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封装: TO-220-3 |
库存5,984 |
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IXYS |
IGBT 3000V 50A 250W TO268
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 3000V
- Current - Collector (Ic) (Max): 50A
- Current - Collector Pulsed (Icm): 140A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
- Power - Max: 250W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 105nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 1.35µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存4,416 |
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IXYS |
MOD IGBT SGL SWITCH 6500V E11
- IGBT Type: NPT
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 6500V
- Current - Collector (Ic) (Max): 600A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 600A
- Current - Collector Cutoff (Max): 120mA
- Input Capacitance (Cies) @ Vce: 150nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E11
- Supplier Device Package: E11
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封装: E11 |
库存5,456 |
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IXYS |
MODULE IGBT CBI
- IGBT Type: Trench
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 17A
- Power - Max: 70W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
- Current - Collector Cutoff (Max): 600µA
- Input Capacitance (Cies) @ Vce: 0.6nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: MiniPack2
- Supplier Device Package: MiniPack2
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封装: MiniPack2 |
库存3,504 |
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IXYS |
MOSFET N-CH PLUS247
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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封装: - |
库存4,960 |
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IXYS |
MOSFET N-CH 1000V 14A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存390,000 |
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IXYS |
MOSFET N-CH 100V 590A MODULE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 590A
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 2000nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 50000pF @ 25V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Supplier Device Package: Module
- Package / Case: Module
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封装: Module |
库存3,280 |
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IXYS |
MOSFET N-CH 500V 48A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 48A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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封装: SOT-227-4, miniBLOC |
库存5,584 |
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IXYS |
MOSFET N-CH 100V 130A TO-263AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 65A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXFA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,088 |
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IXYS |
MOSFET N-CH 40V 220A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6820pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存116,736 |
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IXYS |
MOSFET N-CH 1000V 750MA TO-251
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 17 Ohm @ 375mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存3,072 |
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IXYS |
MOSFET N-CH 100V 60A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存68,568 |
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IXYS |
MOSFET N-CH 170V 260A SOT227
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 170V
- Current - Continuous Drain (Id) @ 25°C: 260A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 45000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1070W (Tc)
- Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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封装: SOT-227-4, miniBLOC |
库存7,800 |
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IXYS |
MOD THYRISTOR/DIODE 1800V Y1-CU
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1800V
- Current - On State (It (AV)) (Max): 250A
- Current - On State (It (RMS)) (Max): 450A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9600A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y1-CU
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封装: Y1-CU |
库存3,376 |
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IXYS |
RECT BRIDGE 3PH 1200V PWS-E-2
- Structure: Bridge, 3-Phase - All SCRs
- Number of SCRs, Diodes: 6 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 167A
- Current - On State (It (RMS)) (Max): 89A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-E2
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封装: PWS-E2 |
库存7,056 |
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IXYS |
MOD THYRISTOR DUAL 1800V Y2-DCB
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1800V
- Current - On State (It (AV)) (Max): 250A
- Current - On State (It (RMS)) (Max): 400A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 9000A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y2-DCB
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封装: Y2-DCB |
库存3,600 |
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IXYS |
DIODE GEN PURP 250V 60A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 250V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 1.31V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 650µA @ 250V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
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封装: TO-247-2 |
库存4,128 |
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IXYS |
DIODE AVALANCHE 1.2KV 11A DO203
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 11A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 36A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA
- Operating Temperature - Junction: -40°C ~ 180°C
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封装: DO-203AA, DO-4, Stud |
库存5,584 |
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IXYS |
DIODE MODULE 12KV 1.7A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 12000V
- Current - Average Rectified (Io) (per Diode): 1.7A
- Voltage - Forward (Vf) (Max) @ If: 12V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 12000V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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封装: Module |
库存5,568 |
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IXYS |
DIODE ARRAY GP 1200V 10A TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 2.22V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 10µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封装: TO-220-3 |
库存6,256 |
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IXYS |
DIODE MODULE 1.2KV 260A Y4-M6
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 260A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 260A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 12mA @ 1200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
- Supplier Device Package: Y4-M6
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封装: Y4-M6 |
库存4,544 |
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IXYS |
IC MOSFET DRVR DUAL 2A 8-DIP
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 35 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 8ns, 8ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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封装: 8-DIP (0.300", 7.62mm) |
库存4,960 |
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IXYS |
DIODE AVAL 1.8KV 10A TO263HV
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
- Capacitance @ Vr, F: 4pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
- Operating Temperature - Junction: -55°C ~ 175°C
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封装: - |
Request a Quote |
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IXYS |
BIPOLAR MODULE - THYRISTOR TO-24
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1.8 kV
- Current - On State (It (AV)) (Max): 110 A
- Current - On State (It (RMS)) (Max): 170 A
- Voltage - Gate Trigger (Vgt) (Max): 1.5 V
- Current - Gate Trigger (Igt) (Max): 150 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
- Current - Hold (Ih) (Max): 200 mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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封装: - |
Request a Quote |
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IXYS |
MOSFET N-CH 150V 170A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7620 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 520W (Tc)
- Rds On (Max) @ Id, Vgs: 6.7mOhm @ 85A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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封装: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 4.8KV 2899A W54
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4800 V
- Current - Average Rectified (Io): 2899A
- Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8600 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 48 µs
- Current - Reverse Leakage @ Vr: 50 mA @ 4800 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AC, K-PUK
- Supplier Device Package: W54
- Operating Temperature - Junction: -40°C ~ 160°C
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封装: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 2.5KV 955A W4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2500 V
- Current - Average Rectified (Io): 955A
- Voltage - Forward (Vf) (Max) @ If: 2.07 V @ 1900 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3.4 µs
- Current - Reverse Leakage @ Vr: 50 mA @ 2500 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W4
- Operating Temperature - Junction: -40°C ~ 125°C
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封装: - |
Request a Quote |
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IXYS |
IGBT 1200V 40A GENX4 XPT TO-247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 140 A
- Current - Collector Pulsed (Icm): 275 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
- Power - Max: 600 W
- Switching Energy: 2.3mJ (on), 3.75mJ (off)
- Input Type: Standard
- Gate Charge: 90 nC
- Td (on/off) @ 25°C: 22ns/204ns
- Test Condition: 600V, 32A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXYH)
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封装: - |
Request a Quote |
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IXYS |
MOSFET N-CH 300V 56A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 320W (Tc)
- Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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封装: - |
库存1,212 |
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