页 51 - Fairchild/ON Semiconductor 产品 - 晶体管 - FET，MOSFET - 单

FDP047N08_F102

Fairchild/ON Semiconductor

PT3 75V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9415pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 268W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存5,328

MOSFET (Metal Oxide)

75V

164A (Tc)

10V

4.5V @ 250µA

152nC @ 10V

9415pF @ 25V

±20V

-

268W (Tc)

-

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

FCB199N65S3

Fairchild/ON Semiconductor

SUPERFET3 650V 199MOHM D2PAK PKG

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存5,152

-

HUF75639G3

Fairchild/ON Semiconductor

MOSFET N-CH 100V 56A TO-247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

封装: TO-247-3

库存498,828

MOSFET (Metal Oxide)

100V

56A (Tc)

10V

4V @ 250µA

130nC @ 20V

2000pF @ 25V

±20V

-

200W (Tc)

25 mOhm @ 56A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247

TO-247-3

FDP8870

Fairchild/ON Semiconductor

MOSFET N-CH 30V 156A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 35A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存167,028

MOSFET (Metal Oxide)

30V

19A (Ta), 156A (Tc)

4.5V, 10V

2.5V @ 250µA

132nC @ 10V

5200pF @ 15V

±20V

-

160W (Tc)

4.1 mOhm @ 35A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

FCP190N65S3

Fairchild/ON Semiconductor

SUPERFET3 650V 190 MOHM, TO220F

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存7,968

-

FDP047N10

Fairchild/ON Semiconductor

MOSFET N-CH 100V 120A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 15265pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存267,804

MOSFET (Metal Oxide)

100V

120A (Tc)

10V

4.5V @ 250µA

210nC @ 10V

15265pF @ 25V

±20V

-

375W (Tc)

4.7 mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

FQB25N33TM_F085

Fairchild/ON Semiconductor

MOSFET N-CH 330V 25A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 330V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 230 mOhm @ 12.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (TO-263AB)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存2,624

MOSFET (Metal Oxide)

330V

25A (Tc)

10V

5V @ 250µA

75nC @ 15V

2010pF @ 25V

±30V

-

3.1W (Ta), 250W (Tc)

230 mOhm @ 12.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D2PAK (TO-263AB)

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FCP11N60N_F102

Fairchild/ON Semiconductor

FCP11N60N IN TO220 F102 T/F OPTI

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 299 mOhm @ 5.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存6,000

MOSFET (Metal Oxide)

600V

10.8A (Tc)

10V

4V @ 250µA

35.6nC @ 10V

1505pF @ 100V

±30V

-

94W (Tc)

299 mOhm @ 5.4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

FCPF11N60T

Fairchild/ON Semiconductor

MOSFET N-CH 600V 11A TO-220F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存5,472

MOSFET (Metal Oxide)

600V

11A (Tc)

10V

5V @ 250µA

52nC @ 10V

1490pF @ 25V

±30V

-

36W (Tc)

380 mOhm @ 5.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

FDB9406L_F085

Fairchild/ON Semiconductor

N-CHANNEL POWERTRENCH MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存4,208

-

FDB8860

Fairchild/ON Semiconductor

MOSFET N-CH 30V 80A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 214nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 12585pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (TO-263AB)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存15,120

MOSFET (Metal Oxide)

30V

80A (Tc)

4.5V, 10V

3V @ 250µA

214nC @ 10V

12585pF @ 15V

±20V

-

254W (Tc)

2.3 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK (TO-263AB)

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDMS8350LET40

Fairchild/ON Semiconductor

PT8 40V/20V NCH POWERTRENCH MOSF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 219nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 16590pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.33W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.85 mOhm @ 47A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Power56
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存5,824

MOSFET (Metal Oxide)

40V

49A (Ta), 300A (Tc)

4.5V, 10V

3V @ 250µA

219nC @ 10V

16590pF @ 20V

±20V

-

3.33W (Ta), 125W (Tc)

0.85 mOhm @ 47A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

Power56

8-PowerTDFN

FDPF39N20TLDTU

Fairchild/ON Semiconductor

UNIFET 200V LDTU FORM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 66 mOhm @ 19.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存3,088

MOSFET (Metal Oxide)

200V

39A (Tc)

10V

5V @ 250µA

49nC @ 10V

2130pF @ 25V

±30V

-

37W (Tc)

66 mOhm @ 19.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

NTMFS10N7D2C

Fairchild/ON Semiconductor

PTNG 100/20V NCH POWER TRENCH MO

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存7,328

-

FDB9406_F085

Fairchild/ON Semiconductor

MOSFET N-CH 40V 110A TO263AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7710pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 176W (Tj)
Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (TO-263AB)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存5,472

MOSFET (Metal Oxide)

40V

110A (Tc)

10V

4V @ 250µA

138nC @ 10V

7710pF @ 25V

±20V

-

176W (Tj)

1.8 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK (TO-263AB)

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FCPF7N60NT

Fairchild/ON Semiconductor

MOSFET N-CH 600V 6.8A TO-220F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 30.5W (Tc)
Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存7,056

MOSFET (Metal Oxide)

600V

6.8A (Tc)

10V

4V @ 250µA

35.6nC @ 10V

960pF @ 100V

±30V

-

30.5W (Tc)

520 mOhm @ 3.4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

FCPF190N65S3L1

Fairchild/ON Semiconductor

SUPERFET3 650V 190 MOHM, TO220F

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存5,648

-

FCP11N60N

Fairchild/ON Semiconductor

MOSFET N-CH 600V 10.8A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 299 mOhm @ 5.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存4,416

MOSFET (Metal Oxide)

600V

10.8A (Tc)

10V

4V @ 250µA

35.6nC @ 10V

1505pF @ 100V

±30V

-

94W (Tc)

299 mOhm @ 5.4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

FDMS10C4D2N

Fairchild/ON Semiconductor

PTNG 100V/20V NCH POWER TRENCH M

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 44A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6), Power56
Package / Case: 8-PowerSMD, Flat Leads

封装: 8-PowerSMD, Flat Leads

库存5,968

MOSFET (Metal Oxide)

100V

17A (Tc)

6V, 10V

4V @ 250µA

65nC @ 10V

4500pF @ 50V

±20V

-

125W (Tc)

4.2 mOhm @ 44A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-PQFN (5x6), Power56

8-PowerSMD, Flat Leads

FDMS8050

Fairchild/ON Semiconductor

PT8 N 30/20 IN POWERCLIP 56 SING

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 750µA
Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 22610pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 0.65 mOhm @ 55A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存8,616

MOSFET (Metal Oxide)

30V

55A (Tc)

4.5V, 10V

3V @ 750µA

285nC @ 10V

22610pF @ 15V

±20V

-

156W (Tc)

0.65 mOhm @ 55A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-PQFN (5x6)

8-PowerTDFN

FDB2552_F085

Fairchild/ON Semiconductor

MOSFET N CH 150V 5A TO-263AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 36 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (TO-263AB)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存5,328

MOSFET (Metal Oxide)

150V

5A (Ta), 37A (Tc)

10V

4V @ 250µA

51nC @ 10V

2800pF @ 25V

±20V

-

150W (Tc)

36 mOhm @ 16A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK (TO-263AB)

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDP100N10

Fairchild/ON Semiconductor

MOSFET N-CH 100V 75A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存170,160

MOSFET (Metal Oxide)

100V

75A (Tc)

10V

4.5V @ 250µA

100nC @ 10V

7300pF @ 25V

±20V

-

208W (Tc)

10 mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

FDMS004N08C

Fairchild/ON Semiconductor

80V/20V N-CHANNEL PTNG MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存3,536

-

FDMS4D4N08C

Fairchild/ON Semiconductor

PTNG 80/20V NCH POWER TRENCH MOS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存5,488

-

FDMS86181

Fairchild/ON Semiconductor

MOSFET N-CH 100V 44A POWER56

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4125pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 44A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6), Power56
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存4,176

MOSFET (Metal Oxide)

100V

44A (Ta), 124A (Tc)

6V, 10V

4V @ 250µA

59nC @ 10V

4125pF @ 50V

±20V

-

2.5W (Ta), 125W (Tc)

4.2 mOhm @ 44A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-PQFN (5x6), Power56

8-PowerTDFN

FDP060AN08A0

Fairchild/ON Semiconductor

MOSFET N-CH 75V 80A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存37,092

MOSFET (Metal Oxide)

75V

16A (Ta), 80A (Tc)

6V, 10V

4V @ 250µA

95nC @ 10V

5150pF @ 25V

±20V

-

255W (Tc)

6 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

FDBL86566_F085

Fairchild/ON Semiconductor

MOSFET N-CH 60V 240A MO299A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6655pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tj)
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PSOF
Package / Case: 8-PowerSFN

封装: 8-PowerSFN

库存4,992

MOSFET (Metal Oxide)

60V

240A (Tc)

10V

4V @ 250µA

110nC @ 10V

6655pF @ 30V

±20V

-

300W (Tj)

2.4 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

8-PSOF

8-PowerSFN

FCPF190N60_F152

Fairchild/ON Semiconductor

MOSFET N-CH 600V 20.2A TO-220F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 199 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F-3
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存4,768

MOSFET (Metal Oxide)

600V

20.2A (Tc)

10V

3.5V @ 250µA

74nC @ 10V

2950pF @ 25V

±20V

-

39W (Tc)

199 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F-3

TO-220-3 Full Pack

HUF75639P3_F102

Fairchild/ON Semiconductor

PWR MOS ULTRAFET 100V/53A/0.025

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存5,488

MOSFET (Metal Oxide)

100V

56A (Tc)

10V

4V @ 250µA

130nC @ 20V

2000pF @ 25V

±20V

-

200W (Tc)

25 mOhm @ 56A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

FDB9409L_F085

Fairchild/ON Semiconductor

PT8 40V LL N-CHANNEL POWERTRENCH

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存2,880

-

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
FDP047N08_F102	Fairchild/ON Semiconductor	PT3 75V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 164A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9415pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 268W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	封装: TO-220-3	库存5,328	MOSFET (Metal Oxide)	75V	164A (Tc)	10V	4.5V @ 250µA	152nC @ 10V	9415pF @ 25V	±20V	-	268W (Tc)	-	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FCB199N65S3	Fairchild/ON Semiconductor	SUPERFET3 650V 199MOHM D2PAK PKG FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存5,152	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HUF75639G3	Fairchild/ON Semiconductor	MOSFET N-CH 100V 56A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	封装: TO-247-3	库存498,828	MOSFET (Metal Oxide)	100V	56A (Tc)	10V	4V @ 250µA	130nC @ 20V	2000pF @ 25V	±20V	-	200W (Tc)	25 mOhm @ 56A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
FDP8870	Fairchild/ON Semiconductor	MOSFET N-CH 30V 156A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 156A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: TO-220-3	库存167,028	MOSFET (Metal Oxide)	30V	19A (Ta), 156A (Tc)	4.5V, 10V	2.5V @ 250µA	132nC @ 10V	5200pF @ 15V	±20V	-	160W (Tc)	4.1 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FCP190N65S3	Fairchild/ON Semiconductor	SUPERFET3 650V 190 MOHM, TO220F FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存7,968	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDP047N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 120A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15265pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: TO-220-3	库存267,804	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	4.5V @ 250µA	210nC @ 10V	15265pF @ 25V	±20V	-	375W (Tc)	4.7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQB25N33TM_F085	Fairchild/ON Semiconductor	MOSFET N-CH 330V 25A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 330V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存2,624	MOSFET (Metal Oxide)	330V	25A (Tc)	10V	5V @ 250µA	75nC @ 15V	2010pF @ 25V	±30V	-	3.1W (Ta), 250W (Tc)	230 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCP11N60N_F102	Fairchild/ON Semiconductor	FCP11N60N IN TO220 F102 T/F OPTI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存6,000	MOSFET (Metal Oxide)	600V	10.8A (Tc)	10V	4V @ 250µA	35.6nC @ 10V	1505pF @ 100V	±30V	-	94W (Tc)	299 mOhm @ 5.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FCPF11N60T	Fairchild/ON Semiconductor	MOSFET N-CH 600V 11A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存5,472	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	52nC @ 10V	1490pF @ 25V	±30V	-	36W (Tc)	380 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FDB9406L_F085	Fairchild/ON Semiconductor	N-CHANNEL POWERTRENCH MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存4,208	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDB8860	Fairchild/ON Semiconductor	MOSFET N-CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 214nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12585pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 254W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存15,120	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	3V @ 250µA	214nC @ 10V	12585pF @ 15V	±20V	-	254W (Tc)	2.3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMS8350LET40	Fairchild/ON Semiconductor	PT8 40V/20V NCH POWERTRENCH MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 219nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16590pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.33W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 0.85 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	封装: 8-PowerTDFN	库存5,824	MOSFET (Metal Oxide)	40V	49A (Ta), 300A (Tc)	4.5V, 10V	3V @ 250µA	219nC @ 10V	16590pF @ 20V	±20V	-	3.33W (Ta), 125W (Tc)	0.85 mOhm @ 47A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerTDFN
FDPF39N20TLDTU	Fairchild/ON Semiconductor	UNIFET 200V LDTU FORM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 66 mOhm @ 19.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存3,088	MOSFET (Metal Oxide)	200V	39A (Tc)	10V	5V @ 250µA	49nC @ 10V	2130pF @ 25V	±30V	-	37W (Tc)	66 mOhm @ 19.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
NTMFS10N7D2C	Fairchild/ON Semiconductor	PTNG 100/20V NCH POWER TRENCH MO FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存7,328	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDB9406_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V 110A TO263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7710pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tj) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存5,472	MOSFET (Metal Oxide)	40V	110A (Tc)	10V	4V @ 250µA	138nC @ 10V	7710pF @ 25V	±20V	-	176W (Tj)	1.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCPF7N60NT	Fairchild/ON Semiconductor	MOSFET N-CH 600V 6.8A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30.5W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存7,056	MOSFET (Metal Oxide)	600V	6.8A (Tc)	10V	4V @ 250µA	35.6nC @ 10V	960pF @ 100V	±30V	-	30.5W (Tc)	520 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FCPF190N65S3L1	Fairchild/ON Semiconductor	SUPERFET3 650V 190 MOHM, TO220F FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存5,648	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCP11N60N	Fairchild/ON Semiconductor	MOSFET N-CH 600V 10.8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	封装: TO-220-3	库存4,416	MOSFET (Metal Oxide)	600V	10.8A (Tc)	10V	4V @ 250µA	35.6nC @ 10V	1505pF @ 100V	±30V	-	94W (Tc)	299 mOhm @ 5.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDMS10C4D2N	Fairchild/ON Semiconductor	PTNG 100V/20V NCH POWER TRENCH M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerSMD, Flat Leads	封装: 8-PowerSMD, Flat Leads	库存5,968	MOSFET (Metal Oxide)	100V	17A (Tc)	6V, 10V	4V @ 250µA	65nC @ 10V	4500pF @ 50V	±20V	-	125W (Tc)	4.2 mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerSMD, Flat Leads
FDMS8050	Fairchild/ON Semiconductor	PT8 N 30/20 IN POWERCLIP 56 SING FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22610pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 0.65 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	封装: 8-PowerTDFN	库存8,616	MOSFET (Metal Oxide)	30V	55A (Tc)	4.5V, 10V	3V @ 750µA	285nC @ 10V	22610pF @ 15V	±20V	-	156W (Tc)	0.65 mOhm @ 55A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
FDB2552_F085	Fairchild/ON Semiconductor	MOSFET N CH 150V 5A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存5,328	MOSFET (Metal Oxide)	150V	5A (Ta), 37A (Tc)	10V	4V @ 250µA	51nC @ 10V	2800pF @ 25V	±20V	-	150W (Tc)	36 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDP100N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 75A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	封装: TO-220-3	库存170,160	MOSFET (Metal Oxide)	100V	75A (Tc)	10V	4.5V @ 250µA	100nC @ 10V	7300pF @ 25V	±20V	-	208W (Tc)	10 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDMS004N08C	Fairchild/ON Semiconductor	80V/20V N-CHANNEL PTNG MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存3,536	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDMS4D4N08C	Fairchild/ON Semiconductor	PTNG 80/20V NCH POWER TRENCH MOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存5,488	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDMS86181	Fairchild/ON Semiconductor	MOSFET N-CH 100V 44A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4125pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6), Power56 Package / Case: 8-PowerTDFN	封装: 8-PowerTDFN	库存4,176	MOSFET (Metal Oxide)	100V	44A (Ta), 124A (Tc)	6V, 10V	4V @ 250µA	59nC @ 10V	4125pF @ 50V	±20V	-	2.5W (Ta), 125W (Tc)	4.2 mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6), Power56	8-PowerTDFN
FDP060AN08A0	Fairchild/ON Semiconductor	MOSFET N-CH 75V 80A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	封装: TO-220-3	库存37,092	MOSFET (Metal Oxide)	75V	16A (Ta), 80A (Tc)	6V, 10V	4V @ 250µA	95nC @ 10V	5150pF @ 25V	±20V	-	255W (Tc)	6 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDBL86566_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 240A MO299A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6655pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tj) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	封装: 8-PowerSFN	库存4,992	MOSFET (Metal Oxide)	60V	240A (Tc)	10V	4V @ 250µA	110nC @ 10V	6655pF @ 30V	±20V	-	300W (Tj)	2.4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PSOF	8-PowerSFN
FCPF190N60_F152	Fairchild/ON Semiconductor	MOSFET N-CH 600V 20.2A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 199 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存4,768	MOSFET (Metal Oxide)	600V	20.2A (Tc)	10V	3.5V @ 250µA	74nC @ 10V	2950pF @ 25V	±20V	-	39W (Tc)	199 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
HUF75639P3_F102	Fairchild/ON Semiconductor	PWR MOS ULTRAFET 100V/53A/0.025 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	封装: TO-220-3	库存5,488	MOSFET (Metal Oxide)	100V	56A (Tc)	10V	4V @ 250µA	130nC @ 20V	2000pF @ 25V	±20V	-	200W (Tc)	25 mOhm @ 56A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDB9409L_F085	Fairchild/ON Semiconductor	PT8 40V LL N-CHANNEL POWERTRENCH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存2,880	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-