Fairchild/ON Semiconductor 产品 - 晶体管 - FET，MOSFET - 单

FQB22P10TM_F085

Fairchild/ON Semiconductor

MOSFET P-CH 100V 22A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FQB7N60TM_WS

Fairchild/ON Semiconductor

MOSFET N-CH 600V 7.4A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3.13W (Ta), 142W (Tc)
• Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FQP6N70

Fairchild/ON Semiconductor

MOSFET N-CH 700V 6.2A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 142W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 3.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

封装: TO-220-3

FCPF7N60

Fairchild/ON Semiconductor

MOSFET N-CH 600V 7A TO220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 31W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

FQPF10N50CF

Fairchild/ON Semiconductor

MOSFET N-CH 500V 10A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2096pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 48W (Tc)
• Rds On (Max) @ Id, Vgs: 610 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

FDD6796A

Fairchild/ON Semiconductor

MOSFET NCH 25V 20A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 13V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.7W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-PAK (TO-252AA)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

FQPF45N15V2

Fairchild/ON Semiconductor

MOSFET N-CH 150V 45A TO-TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 66W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 22.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

FDD5N50FTM_WS

Fairchild/ON Semiconductor

MOSFET N-CH 500V 3.5A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 1.55 Ohm @ 1.75A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

FDP3652

Fairchild/ON Semiconductor

MOSFET N-CH 100V 61A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 61A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

封装: TO-220-3

FCP380N60

Fairchild/ON Semiconductor

MOSFET N-CH 600V TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1665pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 106W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

封装: TO-220-3

FDMC013P030Z

Fairchild/ON Semiconductor

PT8 P Z -30V/-25V ZENER POWERTRE

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-MLP (3.3x3.3)
• Package / Case: 8-PowerWDFN

封装: 8-PowerWDFN

FQPF5P20RDTU

Fairchild/ON Semiconductor

PCH 500V 2A MOSFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 2.15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 38W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

FQP12N60C

Fairchild/ON Semiconductor

MOSFET N-CH 600V 12A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 225W (Tc)
• Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

封装: TO-220-3

FQB8N60CTM

Fairchild/ON Semiconductor

MOSFET N-CH 600V 7.5A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FCPF11N60

Fairchild/ON Semiconductor

MOSFET N-CH 600V 11A TO220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 36W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

FCU5N60TU

Fairchild/ON Semiconductor

MOSFET N-CH 600V 4.6A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 54W (Tc)
• Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

FDD86367

Fairchild/ON Semiconductor

MV7 80/20V 1000A N-CHANNEL POWER

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

FDD2670

Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.6A D-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1228pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
• Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

FQD3P50TM_AM002BLT

Fairchild/ON Semiconductor

P-CH/500V/2.1A/4.9OHM

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

FQP6N60C

Fairchild/ON Semiconductor

MOSFET N-CH 600V 5.5A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.75A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

封装: TO-220-3

FDPF12N50FT

Fairchild/ON Semiconductor

MOSFET N-CH 500V 11.5A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 42W (Tc)
• Rds On (Max) @ Id, Vgs: 700 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

FDPF33N25TRDTU

Fairchild/ON Semiconductor

UNIFET 250V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2135pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 37W (Tc)
• Rds On (Max) @ Id, Vgs: 94 mOhm @ 16.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

FDMS8026S

Fairchild/ON Semiconductor

MOSFET N-CH 30V POWER56

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2280pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
• Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 19A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Power56
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

FCPF380N60

Fairchild/ON Semiconductor

MOSFET N-CH 600V TO-220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1665pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 31W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

FDMC008N08C

Fairchild/ON Semiconductor

80V/20V N-CHANNEL PTNG MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

FDMC007N08LC

Fairchild/ON Semiconductor

80V/20V N-CHANNEL PTNG MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

NDB5060L

Fairchild/ON Semiconductor

MOSFET N-CH 60V 26A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 13A, 10V
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FQPF5N90

Fairchild/ON Semiconductor

MOSFET N-CH 900V 3A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 51W (Tc)
• Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

FDMC86320

Fairchild/ON Semiconductor

MOSFET N CH 80V 10.7A 8-MLP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2640pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
• Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 10.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-MLP (3.3x3.3), Power33
• Package / Case: 8-PowerWDFN

封装: 8-PowerWDFN

FQPF70N10

Fairchild/ON Semiconductor

MOSFET N-CH 100V 35A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 62W (Tc)
• Rds On (Max) @ Id, Vgs: 23 mOhm @ 17.5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack