页 79 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  79/148
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描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRGP4262D-EPBF
Infineon Technologies

IGBT 650V 60A 250W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 520µJ (on), 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: 24ns/73ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 170ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存103,464
650V
60A
96A
2.1V @ 15V, 24A
250W
520µJ (on), 240µJ (off)
Standard
70nC
24ns/73ns
400V, 24A, 10 Ohm, 15V
170ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRG7PH42UD1MPBF
Infineon Technologies

IGBT 1200V 85A 313W TO247AD

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 85A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 313W
  • Switching Energy: 1.21mJ (off)
  • Input Type: Standard
  • Gate Charge: 270nC
  • Td (on/off) @ 25°C: -/270ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存6,800
1200V
85A
200A
2V @ 15V, 30A
313W
1.21mJ (off)
Standard
270nC
-/270ns
600V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
SGP30N60XKSA1
Infineon Technologies

IGBT 600V 41A 250W TO263

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 112A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 1.29mJ
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 44ns/291ns
  • Test Condition: 400V, 30A, 11 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存4,512
600V
41A
112A
2.4V @ 15V, 30A
250W
1.29mJ
Standard
140nC
44ns/291ns
400V, 30A, 11 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRG4PH20KD
Infineon Technologies

IGBT 1200V 11A 60W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 22A
  • Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
  • Power - Max: 60W
  • Switching Energy: 620µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 28nC
  • Td (on/off) @ 25°C: 50ns/100ns
  • Test Condition: 800V, 5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 51ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存7,824
1200V
11A
22A
4.3V @ 15V, 5A
60W
620µJ (on), 300µJ (off)
Standard
28nC
50ns/100ns
800V, 5A, 50 Ohm, 15V
51ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRGPF40F
Infineon Technologies

IGBT FAST 900V 31A TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 17A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存3,968
900V
31A
-
3.3V @ 15V, 17A
160W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
RJH60D6DPM-00#T1
Renesas Electronics America

IGBT 600V 80A 50W TO-3PFM

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
  • Power - Max: 50W
  • Switching Energy: 850µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 104nC
  • Td (on/off) @ 25°C: 50ns/160ns
  • Test Condition: 300V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
封装: TO-3PFM, SC-93-3
库存2,016
600V
80A
-
2.2V @ 15V, 40A
50W
850µJ (on), 600µJ (off)
Standard
104nC
50ns/160ns
300V, 40A, 5 Ohm, 15V
100ns
150°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
MGP15N40CLG
ON Semiconductor

IGBT 440V 15A 150W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 25A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/4µs
  • Test Condition: 300V, 6.5A, 1 kOhm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存2,640
440V
15A
50A
2.9V @ 4V, 25A
150W
-
Logic
-
-/4µs
300V, 6.5A, 1 kOhm
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
IKD04N60RAATMA1
Infineon Technologies

IGBT 600V 8A 75W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 75W
  • Switching Energy: 90µJ (on), 150µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 14ns/146ns
  • Test Condition: 400V, 4A, 43 Ohm, 15V
  • Reverse Recovery Time (trr): 43ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存2,100
600V
8A
12A
2.1V @ 15V, 4A
75W
90µJ (on), 150µJ (off)
Standard
27nC
14ns/146ns
400V, 4A, 43 Ohm, 15V
43ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IXBF10N300C
IXYS

IGBT 3000V 29A 240W ISOPLUSI4

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 29A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
  • Power - Max: 240W
  • Switching Energy: 7.2mJ (on), 1.04mJ (off)
  • Input Type: Standard
  • Gate Charge: 208nC
  • Td (on/off) @ 25°C: 32ns/390ns
  • Test Condition: 1500V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 700ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5 (3 leads)
  • Supplier Device Package: ISOPLUS i4-PAC?
封装: i4-Pac?-5 (3 leads)
库存7,264
3000V
29A
240A
6V @ 15V, 10A
240W
7.2mJ (on), 1.04mJ (off)
Standard
208nC
32ns/390ns
1500V, 10A, 10 Ohm, 15V
700ns
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5 (3 leads)
ISOPLUS i4-PAC?
IXGR16N170AH1
IXYS

IGBT 1700V 16A 120W ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 8A
  • Power - Max: 120W
  • Switching Energy: 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 36ns/200ns
  • Test Condition: 850V, 16A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 150ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
封装: ISOPLUS247?
库存6,944
1700V
16A
40A
5V @ 15V, 8A
120W
900µJ (off)
Standard
65nC
36ns/200ns
850V, 16A, 10 Ohm, 15V
150ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
IXGX120N60B3
IXYS

IGBT 600V 280A 780W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 280A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
  • Power - Max: 780W
  • Switching Energy: 2.9mJ (on), 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 465nC
  • Td (on/off) @ 25°C: 40ns/227ns
  • Test Condition: 480V, 100A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封装: TO-247-3
库存5,232
600V
280A
600A
1.8V @ 15V, 100A
780W
2.9mJ (on), 3.5mJ (off)
Standard
465nC
40ns/227ns
480V, 100A, 2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
hot IXGH60N60C3D1
IXYS

IGBT 600V 75A 380W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 380W
  • Switching Energy: 800µJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 115nC
  • Td (on/off) @ 25°C: 21ns/70ns
  • Test Condition: 480V, 40A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存475,464
600V
75A
300A
2.5V @ 15V, 40A
380W
800µJ (on), 450µJ (off)
Standard
115nC
21ns/70ns
480V, 40A, 3 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGH30N120IH
IXYS

IGBT 1200V 50A TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存2,704
1200V
50A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD (IXGH)
APT40GR120B2SCD10
Microsemi Corporation

IGBT 1200V 88A 500W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 88A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
  • Power - Max: 500W
  • Switching Energy: 929µJ (on), 1070µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 20ns/166ns
  • Test Condition: 600V, 40A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存7,504
1200V
88A
160A
3.2V @ 15V, 40A
500W
929µJ (on), 1070µJ (off)
Standard
210nC
20ns/166ns
600V, 40A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
AOB5B65M1
Alpha & Omega Semiconductor Inc.

IGBT 650V 5A TO263

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 15A
  • Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
  • Power - Max: 83W
  • Switching Energy: 80µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 14nC
  • Td (on/off) @ 25°C: 8.5ns/106ns
  • Test Condition: 400V, 5A, 60 Ohm, 15V
  • Reverse Recovery Time (trr): 195ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,360
650V
10A
15A
1.98V @ 15V, 5A
83W
80µJ (on), 70µJ (off)
Standard
14nC
8.5ns/106ns
400V, 5A, 60 Ohm, 15V
195ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
hot IRGP4072DPBF
Infineon Technologies

IGBT 300V 70A 180W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
  • Power - Max: 180W
  • Switching Energy: 409µJ (on), 838µJ (off)
  • Input Type: Standard
  • Gate Charge: 73nC
  • Td (on/off) @ 25°C: 18ns/144ns
  • Test Condition: 240V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 122ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存5,952
300V
70A
120A
1.7V @ 15V, 40A
180W
409µJ (on), 838µJ (off)
Standard
73nC
18ns/144ns
240V, 40A, 10 Ohm, 15V
122ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
APT35GP120B2DQ2G
Microsemi Corporation

IGBT 1200V 96A 543W TMAX

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 96A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
  • Power - Max: 543W
  • Switching Energy: 750µJ (on), 680µJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 16ns/95ns
  • Test Condition: 600V, 35A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
封装: TO-247-3 Variant
库存7,968
1200V
96A
140A
3.9V @ 15V, 35A
543W
750µJ (on), 680µJ (off)
Standard
150nC
16ns/95ns
600V, 35A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
IXGT32N170
IXYS

IGBT 1700V 75A 350W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
  • Power - Max: 350W
  • Switching Energy: 11mJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 45ns/270ns
  • Test Condition: 1020V, 32A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存3,776
1700V
75A
200A
3.3V @ 15V, 32A
350W
11mJ (off)
Standard
155nC
45ns/270ns
1020V, 32A, 2.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
SIGC12T60NCX1SA3
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 10A, 27Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
10 A
30 A
2.5V @ 15V, 10A
-
-
Standard
-
21ns/110ns
300V, 10A, 27Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IXBA16N170AHV
IXYS

REVERSE CONDUCTING IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 16 A
  • Current - Collector Pulsed (Icm): 40 A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
  • Power - Max: 150 W
  • Switching Energy: 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 65 nC
  • Td (on/off) @ 25°C: 15ns/250ns
  • Test Condition: 1360V, 10A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 25 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
封装: -
库存42
1700 V
16 A
40 A
6V @ 15V, 10A
150 W
2.5mJ (off)
Standard
65 nC
15ns/250ns
1360V, 10A, 10Ohm, 15V
25 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
IKWH75N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
  • Power - Max: 341 W
  • Switching Energy: 2.42mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 150 nC
  • Td (on/off) @ 25°C: 25ns/45ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 89 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-32
封装: -
库存642
650 V
80 A
300 A
1.65V @ 15V, 75A
341 W
2.42mJ (on), 1.4mJ (off)
Standard
150 nC
25ns/45ns
400V, 75A, 10Ohm, 15V
89 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-32
RGTV00TK65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 45A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 45 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 94 W
  • Switching Energy: 1.17mJ (on), 940µJ (off)
  • Input Type: Standard
  • Gate Charge: 104 nC
  • Td (on/off) @ 25°C: 41ns/142ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 102 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
封装: -
库存1,350
650 V
45 A
200 A
1.9V @ 15V, 50A
94 W
1.17mJ (on), 940µJ (off)
Standard
104 nC
41ns/142ns
400V, 50A, 10Ohm, 15V
102 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
IXBT42N170-TRL
IXYS

IGBT 1700V 80A TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A
  • Power - Max: 360 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 188 nC
  • Td (on/off) @ 25°C: 37ns/340ns
  • Test Condition: 850V, 42A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: -
Request a Quote
1700 V
80 A
300 A
2.8V @ 15V, 42A
360 W
-
Standard
188 nC
37ns/340ns
850V, 42A, 10Ohm, 15V
-
-
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268
RJP3065DPP-90-T2F
Renesas Electronics Corporation

HIGH SPEED IGBT, 300V, 40A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IHW30N110R5XKSA1
Infineon Technologies

IGBT TRENCH 60A TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
  • Power - Max: 330 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 240 nC
  • Td (on/off) @ 25°C: -/350ns
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: -
库存645
-
60 A
90 A
1.85V @ 15V, 30A
330 W
-
Standard
240 nC
-/350ns
-
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
RGTH00TS65GC13
Rohm Semiconductor

IGBT TRENCH FIELD 650V 85A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 85 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 277 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 94 nC
  • Td (on/off) @ 25°C: 39ns/143ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: -
库存1,794
650 V
85 A
200 A
2.1V @ 15V, 50A
277 W
-
Standard
94 nC
39ns/143ns
400V, 50A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IGTM10N50A
Harris Corporation

N CHANNEL IGBT FOR SWITCHING APP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 500 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
封装: -
Request a Quote
500 V
10 A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-204AA, TO-3
TO-3
FGY100T120SWD
onsemi

IGBT FIELD STOP 1200V 200A TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 200 A
  • Current - Collector Pulsed (Icm): 400 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: 866 W
  • Switching Energy: 3.1mJ (on), 1.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 284 nC
  • Td (on/off) @ 25°C: 46.4ns/209.6ns
  • Test Condition: 600V, 50A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 152 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247-3
封装: -
Request a Quote
1200 V
200 A
400 A
2V @ 15V, 100A
866 W
3.1mJ (on), 1.6mJ (off)
Standard
284 nC
46.4ns/209.6ns
600V, 50A, 4.7Ohm, 15V
152 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
TO-247-3
IXGT32N170-TRL
IXYS

IGBT 1700V 75A 350W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
  • Power - Max: 350 W
  • Switching Energy: 11mJ (off)
  • Input Type: Standard
  • Gate Charge: 155 nC
  • Td (on/off) @ 25°C: 45ns/270ns
  • Test Condition: 1020V, 32A, 2.7Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268AA
封装: -
库存6,666
1700 V
75 A
200 A
3.3V @ 15V, 32A
350 W
11mJ (off)
Standard
155 nC
45ns/270ns
1020V, 32A, 2.7Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268AA
IXYY8N90C3-TRL
IXYS

IXYY8N90C3 TRL

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 48 A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
  • Power - Max: 125 W
  • Switching Energy: 460µJ (on), 180µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.3 nC
  • Td (on/off) @ 25°C: 16ns/40ns
  • Test Condition: 450V, 8A, 30Ohm, 15V
  • Reverse Recovery Time (trr): 20 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
封装: -
Request a Quote
900 V
20 A
48 A
3V @ 15V, 8A
125 W
460µJ (on), 180µJ (off)
Standard
13.3 nC
16ns/40ns
450V, 8A, 30Ohm, 15V
20 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA