页 74 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  74/148
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7CH11K10EF
Infineon Technologies

IGBT 1200V DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,400
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRGP4760PBF
Infineon Technologies

IGBT 650V TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 144A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
  • Power - Max: 325W
  • Switching Energy: 1.7mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 70ns/140ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存2,720
650V
90A
144A
2V @ 15V, 48A
325W
1.7mJ (on), 1mJ (off)
Standard
145nC
70ns/140ns
400V, 48A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG7PG35UPBF
Infineon Technologies

IGBT 1000V 55A 210W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 210W
  • Switching Energy: 1.06mJ (on), 620µJ (off)
  • Input Type: Standard
  • Gate Charge: 85nC
  • Td (on/off) @ 25°C: 30ns/160ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存7,360
1000V
55A
60A
2.2V @ 15V, 20A
210W
1.06mJ (on), 620µJ (off)
Standard
85nC
30ns/160ns
600V, 20A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG4BC20FD
Infineon Technologies

IGBT 600V 16A 60W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 64A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
  • Power - Max: 60W
  • Switching Energy: 250µJ (on), 640µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 43ns/240ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存7,680
600V
16A
64A
2V @ 15V, 9A
60W
250µJ (on), 640µJ (off)
Standard
27nC
43ns/240ns
480V, 9A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
NGTB20N120IHSWG
ON Semiconductor

IGBT 1200V 20A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 156W
  • Switching Energy: 650µJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: -/160ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存2,608
1200V
40A
120A
2.4V @ 15V, 20A
156W
650µJ (off)
Standard
155nC
-/160ns
600V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IXGH34N60B2
IXYS

IGBT 600V 70A 190W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 24A
  • Power - Max: 190W
  • Switching Energy: 640µJ (off)
  • Input Type: Standard
  • Gate Charge: 66nC
  • Td (on/off) @ 25°C: 13ns/150ns
  • Test Condition: 400V, 24A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存3,504
600V
70A
150A
1.55V @ 15V, 24A
190W
640µJ (off)
Standard
66nC
13ns/150ns
400V, 24A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGH12N60BD1
IXYS

IGBT 600V 24A 100W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 20ns/150ns
  • Test Condition: 480V, 12A, 18 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存4,944
600V
24A
48A
2.1V @ 15V, 12A
100W
500µJ (off)
Standard
32nC
20ns/150ns
480V, 12A, 18 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGH12N60B
IXYS

IGBT 600V 24A 100W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 20ns/150ns
  • Test Condition: 480V, 12A, 18 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存3,184
600V
24A
48A
2.1V @ 15V, 12A
100W
500µJ (off)
Standard
32nC
20ns/150ns
480V, 12A, 18 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot HGT1S3N60A4DS9A
Fairchild/ON Semiconductor

IGBT 600V 17A 70W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 17A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
  • Power - Max: 70W
  • Switching Energy: 37µJ (on), 25µJ (off)
  • Input Type: Standard
  • Gate Charge: 21nC
  • Td (on/off) @ 25°C: 6ns/73ns
  • Test Condition: 390V, 3A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 29ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存60,000
600V
17A
40A
2.7V @ 15V, 3A
70W
37µJ (on), 25µJ (off)
Standard
21nC
6ns/73ns
390V, 3A, 50 Ohm, 15V
29ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
STGP8NC60K
STMicroelectronics

IGBT 600V 15A 65W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
  • Power - Max: 65W
  • Switching Energy: 55µJ (on), 85µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 17ns/72ns
  • Test Condition: 390V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存4,880
600V
15A
30A
2.75V @ 15V, 3A
65W
55µJ (on), 85µJ (off)
Standard
19nC
17ns/72ns
390V, 3A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGR60N60C2
IXYS

IGBT 600V 75A 250W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
  • Power - Max: 250W
  • Switching Energy: 490µJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 18ns/95ns
  • Test Condition: 400V, 50A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
封装: ISOPLUS247?
库存4,592
600V
75A
300A
2.7V @ 15V, 50A
250W
490µJ (off)
Standard
140nC
18ns/95ns
400V, 50A, 2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
FGB20N6S2
Fairchild/ON Semiconductor

IGBT 600V 28A 125W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
  • Power - Max: 125W
  • Switching Energy: 25µJ (on), 58µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 7.7ns/87ns
  • Test Condition: 390V, 7A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,976
600V
28A
40A
2.7V @ 15V, 7A
125W
25µJ (on), 58µJ (off)
Standard
30nC
7.7ns/87ns
390V, 7A, 25 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
AIGW50N65F5XKSA1
Infineon Technologies

IGBT 650V TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,688
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGB15N60TATMA1
Infineon Technologies

IGBT 600V 30A 130W TO263-3-2

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
  • Power - Max: 130W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: 17ns/188ns
  • Test Condition: 400V, 15A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,008
600V
30A
45A
2.05V @ 15V, 15A
130W
570µJ
Standard
87nC
17ns/188ns
400V, 15A, 15 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
RJH65T47DPQ-A0#T0
Renesas Electronics America

IGBT TRENCH 650V 90A TO247A

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
  • Power - Max: 375W
  • Switching Energy: 520µJ (on), 560µJ (off)
  • Input Type: Standard
  • Gate Charge: 127nC
  • Td (on/off) @ 25°C: 45ns/190ns
  • Test Condition: 400V, 45A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247A
封装: TO-247-3
库存7,216
650V
90A
-
2.4V @ 15V, 45A
375W
520µJ (on), 560µJ (off)
Standard
127nC
45ns/190ns
400V, 45A, 10 Ohm, 15V
100ns
175°C (TJ)
Through Hole
TO-247-3
TO-247A
STGD10HF60KD
STMicroelectronics

IGBT 600V 10A DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 5A
  • Power - Max: 62.5W
  • Switching Energy: 45µJ (on), 105µJ (off)
  • Input Type: Standard
  • Gate Charge: 23nC
  • Td (on/off) @ 25°C: 9.5ns/87ns
  • Test Condition: 400V, 5A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存7,376
600V
18A
30A
2.75V @ 15V, 5A
62.5W
45µJ (on), 105µJ (off)
Standard
23nC
9.5ns/87ns
400V, 5A, 10 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
hot STGB18N40LZT4
STMicroelectronics

IGBT 420V 30A 150W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 420V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 4.5V, 10A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 29nC
  • Td (on/off) @ 25°C: 650ns/13.5µs
  • Test Condition: 300V, 10A, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存196,716
420V
30A
40A
1.7V @ 4.5V, 10A
150W
-
Logic
29nC
650ns/13.5µs
300V, 10A, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
STGWT20H65FB
STMicroelectronics

IGBT 650V 40A 168W TO3P

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 168W
  • Switching Energy: 77µJ (on), 170µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 30ns/139ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: TO-3P-3, SC-65-3
库存8,688
650V
40A
80A
2V @ 15V, 20A
168W
77µJ (on), 170µJ (off)
Standard
120nC
30ns/139ns
400V, 20A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
AOK20B135D1
Alpha & Omega Semiconductor Inc.

IGBT 1350V 20A 340W TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1350V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
  • Power - Max: 340W
  • Switching Energy: 1.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 66nC
  • Td (on/off) @ 25°C: -/156ns
  • Test Condition: 600V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存7,356
1350V
40A
80A
1.8V @ 15V, 20A
340W
1.05mJ (off)
Standard
66nC
-/156ns
600V, 20A, 15 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
GT20N135SRA-S1E
Toshiba Semiconductor and Storage

IGBT 1350V 40A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1350 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 312 W
  • Switching Energy: -, 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 185 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 300V, 40A, 39Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: -
库存30
1350 V
40 A
80 A
2.4V @ 15V, 40A
312 W
-, 700µJ (off)
Standard
185 nC
-
300V, 40A, 39Ohm, 15V
-
175°C (TJ)
Through Hole
TO-247-3
TO-247
RGS50TSX2HRC11
Rohm Semiconductor

IGBT TRENCH FLD 1200V 50A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 395 W
  • Switching Energy: 1.4mJ (on), 1.65mJ (off)
  • Input Type: Standard
  • Gate Charge: 67 nC
  • Td (on/off) @ 25°C: 37ns/140ns
  • Test Condition: 600V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封装: -
库存1,338
1200 V
50 A
75 A
2.1V @ 15V, 25A
395 W
1.4mJ (on), 1.65mJ (off)
Standard
67 nC
37ns/140ns
600V, 25A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
SIGC12T60SNCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 29ns/266ns
  • Test Condition: 400V, 10A, 25Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
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600 V
10 A
30 A
2.5V @ 15V, 10A
-
-
Standard
-
29ns/266ns
400V, 10A, 25Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
RGTH50TK65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 26A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 26 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 59 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 49 nC
  • Td (on/off) @ 25°C: 27ns/94ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
封装: -
库存1,350
650 V
26 A
100 A
2.1V @ 15V, 25A
59 W
-
Standard
49 nC
27ns/94ns
400V, 25A, 10Ohm, 15V
58 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
IXYH120N65C3
IXYS

DISC IGBT XPT-GENX3 TO-247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 260 A
  • Current - Collector Pulsed (Icm): 620 A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
  • Power - Max: 1360 W
  • Switching Energy: 1.25mJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 265 nC
  • Td (on/off) @ 25°C: 28ns/127ns
  • Test Condition: 400V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 29 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
封装: -
Request a Quote
650 V
260 A
620 A
2.8V @ 15V, 100A
1360 W
1.25mJ (on), 500µJ (off)
Standard
265 nC
28ns/127ns
400V, 50A, 2Ohm, 15V
29 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
MIW40N65-BP
Micro Commercial Co

IGBT 650V 40A TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 280 W
  • Switching Energy: 3.3mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 165 nC
  • Td (on/off) @ 25°C: 62ns/265ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 41 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: -
库存915
650 V
80 A
120 A
2.4V @ 15V, 40A
280 W
3.3mJ (on), 1.4mJ (off)
Standard
165 nC
62ns/265ns
600V, 40A, 10Ohm, 15V
41 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
HGTP10N40C1D
Harris Corporation

17.5A, 400V, N-CHANNEL IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 17.5 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
  • Power - Max: 75 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 19 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: -
Request a Quote
400 V
17.5 A
-
3.2V @ 20V, 17.5A
75 W
-
Standard
19 nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
AFGB30T65SQDN
onsemi

650V/30A FS4 IGBT TO263 A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 220 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 56 nC
  • Td (on/off) @ 25°C: 14.5ns/63.2ns
  • Test Condition: 400V, 30A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 245 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
封装: -
Request a Quote
650 V
60 A
120 A
2.1V @ 15V, 30A
220 W
-
Standard
56 nC
14.5ns/63.2ns
400V, 30A, 6Ohm, 15V
245 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
RJH60T04DPQ-A0-T0
Renesas Electronics Corporation

IGBT TH

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 180 A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A
  • Power - Max: 208.3 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 87 nC
  • Td (on/off) @ 25°C: 54ns/136ns
  • Test Condition: 300V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 100 ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247A
封装: -
Request a Quote
600 V
60 A
180 A
1.95V @ 15V, 30A
208.3 W
-
Standard
87 nC
54ns/136ns
300V, 30A, 10Ohm, 15V
100 ns
150°C (TJ)
Through Hole
TO-247-3
TO-247A
FGHL40T120SWD
onsemi

IGBT FIELD STOP 1200V 70A TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 70 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 469 W
  • Switching Energy: 2.4mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 118 nC
  • Td (on/off) @ 25°C: 24ns/118ns
  • Test Condition: 600V, 40A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 185 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: -
Request a Quote
1200 V
70 A
160 A
2V @ 15V, 40A
469 W
2.4mJ (on), 1.1mJ (off)
Standard
118 nC
24ns/118ns
600V, 40A, 4.7Ohm, 15V
185 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
AOK40B120P1
Alpha & Omega Semiconductor Inc.

IGBT 40A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 600 W
  • Switching Energy: 2.5mJ (on), 1.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 202 nC
  • Td (on/off) @ 25°C: 53ns/210ns
  • Test Condition: 600V, 40A, 7.5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: -
Request a Quote
1200 V
80 A
160 A
2.3V @ 15V, 40A
600 W
2.5mJ (on), 1.3mJ (off)
Standard
202 nC
53ns/210ns
600V, 40A, 7.5Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247