页 747 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品

AO3400

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 5.8A SOT23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存20,683,500

-

RJK0601DPN-E0#T2

Renesas Electronics America

MOSFET N-CH 60V 110A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 55A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存2,656

MOSFET (Metal Oxide)

60V

110A (Ta)

10V

-

141nC @ 10V

10000pF @ 10V

±20V

-

200W (Tc)

3.1 mOhm @ 55A, 10V

150°C (TJ)

Through Hole

TO-220AB

TO-220-3

SIS426DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 35A 1212-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? 1212-8
Package / Case: PowerPAK? 1212-8

封装: PowerPAK? 1212-8

库存443,880

MOSFET (Metal Oxide)

20V

35A (Tc)

4.5V, 10V

2.5V @ 250µA

42nC @ 10V

1570pF @ 10V

±20V

-

3.7W (Ta), 52W (Tc)

4.5 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8

SIB419DK-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 9A SC75-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.82nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 6V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 2.45W (Ta), 13.1W (Tc)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.2A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SC-75-6L Single
Package / Case: PowerPAK? SC-75-6L

封装: PowerPAK? SC-75-6L

库存4,816

MOSFET (Metal Oxide)

12V

9A (Tc)

1.8V, 4.5V

1V @ 250µA

11.82nC @ 5V

562pF @ 6V

±8V

-

2.45W (Ta), 13.1W (Tc)

60 mOhm @ 5.2A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-75-6L Single

PowerPAK? SC-75-6L

SI7718DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 35A 1212-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? 1212-8
Package / Case: PowerPAK? 1212-8

封装: PowerPAK? 1212-8

库存6,192

MOSFET (Metal Oxide)

30V

35A (Tc)

4.5V, 10V

2.5V @ 250µA

45nC @ 10V

1600pF @ 15V

±20V

-

3.7W (Ta), 52W (Tc)

6 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8

NTMFS4847NT1G

ON Semiconductor

MOSFET N-CH 30V 11.5A SO-8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2614pF @ 12V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 880mW (Ta), 48.4W (Tc)
Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads

封装: 8-PowerTDFN, 5 Leads

库存152,832

MOSFET (Metal Oxide)

30V

11.5A (Ta), 85A (Tc)

4.5V, 11.5V

2.5V @ 250µA

28nC @ 4.5V

2614pF @ 12V

±16V

-

880mW (Ta), 48.4W (Tc)

4.1 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN, 5 Leads

NTB23N03RG

ON Semiconductor

MOSFET N-CH 25V 23A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 37.5W (Tj)
Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存5,664

MOSFET (Metal Oxide)

25V

23A (Ta)

4.5V, 10V

2V @ 250µA

3.76nC @ 4.5V

225pF @ 20V

±20V

-

37.5W (Tj)

45 mOhm @ 6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ZVP4525GTC

Diodes Incorporated

MOSFET P-CH 250V 0.265A SOT223

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V
Vgs (Max): ±40V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

库存7,712

MOSFET (Metal Oxide)

250V

265mA (Ta)

3.5V, 10V

2V @ 1mA

3.45nC @ 10V

73pF @ 25V

±40V

-

2W (Ta)

14 Ohm @ 200mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223

TO-261-4, TO-261AA

NTB22N06LT4

ON Semiconductor

MOSFET N-CH 60V 22A D2PAK-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 60W (Tj)
Rds On (Max) @ Id, Vgs: 65 mOhm @ 11A, 5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,792

MOSFET (Metal Oxide)

60V

22A (Ta)

5V

2V @ 250µA

20nC @ 5V

690pF @ 25V

±10V

-

60W (Tj)

65 mOhm @ 11A, 5V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRLZ24STRL

Vishay Siliconix

MOSFET N-CH 60V 17A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存19,200

MOSFET (Metal Oxide)

60V

17A (Tc)

4V, 5V

2V @ 250µA

18nC @ 5V

870pF @ 25V

±10V

-

3.7W (Ta), 60W (Tc)

100 mOhm @ 10A, 5V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF7468PBF

Infineon Technologies

MOSFET N-CH 40V 9.4A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 20V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 9.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存10,908

MOSFET (Metal Oxide)

40V

9.4A (Ta)

4.5V, 10V

2V @ 250µA

34nC @ 4.5V

2460pF @ 20V

±12V

-

2.5W (Ta)

15.5 mOhm @ 9.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

APT10M11JVRU2

Microsemi Corporation

MOSFET N-CH 100V 142A SOT227

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 142A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 450W (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 71A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC

封装: SOT-227-4, miniBLOC

库存2,784

MOSFET (Metal Oxide)

100V

142A

10V

4V @ 2.5mA

300nC @ 10V

8600pF @ 25V

±30V

-

450W (Tc)

11 mOhm @ 71A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227

SOT-227-4, miniBLOC

CSD23285F5

Texas Instruments

MOSFET P-CH 12V

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 628pF @ 6V
Vgs (Max): -6V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 1A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-PICOSTAR
Package / Case: 3-XFDFN

封装: 3-XFDFN

库存5,680

MOSFET (Metal Oxide)

12V

5.4A (Ta)

1.5V, 4.5V

950mV @ 250µA

4.2nC @ 4.5V

628pF @ 6V

-6V

-

500mW (Ta)

35 mOhm @ 1A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

3-PICOSTAR

3-XFDFN

SIHW61N65EF-GE3

Vishay Siliconix

MOSFET N-CH 650V 64A TO247AD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 371nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7407pF @ 100V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 47 mOhm @ 30.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3

封装: TO-247-3

库存3,120

MOSFET (Metal Oxide)

650V

64A (Tc)

10V

4V @ 250µA

371nC @ 10V

7407pF @ 100V

±30V

-

520W (Tc)

47 mOhm @ 30.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247AD

TO-247-3

STP150NF55

STMicroelectronics

MOSFET N-CH 55V 120A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存470,376

MOSFET (Metal Oxide)

55V

120A (Tc)

10V

4V @ 250µA

190nC @ 10V

4400pF @ 25V

±20V

-

300W (Tc)

6 mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

2N7002K-T1-E3

Vishay Siliconix

MOSFET N-CH 60V 300MA SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存2,344,020

MOSFET (Metal Oxide)

60V

300mA (Ta)

4.5V, 10V

2.5V @ 250µA

0.6nC @ 4.5V

30pF @ 25V

±20V

-

350mW (Ta)

2 Ohm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3 (TO-236)

TO-236-3, SC-59, SOT-23-3

R6020KNZ1C9

Rohm Semiconductor

NCH 600V 20A POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196 mOhm @ 9.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

封装: TO-247-3

库存9,156

MOSFET (Metal Oxide)

600V

20A (Tc)

10V

5V @ 1mA

40nC @ 10V

1550pF @ 25V

±20V

-

231W (Tc)

196 mOhm @ 9.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247

TO-247-3

CSD18510Q5BT

Texas Instruments

MOSFET N-CH 40V 300A 8VSON-CLIP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 0.96 mOhm @ 32A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-VSON-CLIP (5x6)
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存6,684

MOSFET (Metal Oxide)

40V

300A (Tc)

4.5V, 10V

2.3V @ 250µA

153nC @ 10V

11400pF @ 20V

±20V

-

156W (Tc)

0.96 mOhm @ 32A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-VSON-CLIP (5x6)

8-PowerTDFN

FDPF18N50

Fairchild/ON Semiconductor

MOSFET N-CH 500V 18A TO-220F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2860pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 38.5W (Tc)
Rds On (Max) @ Id, Vgs: 265 mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存12,300

MOSFET (Metal Oxide)

500V

18A (Tc)

10V

5V @ 250µA

60nC @ 10V

2860pF @ 25V

±30V

-

38.5W (Tc)

265 mOhm @ 9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

SI7423DN-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 7.4A 1212-8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 18 mOhm @ 11.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? 1212-8
Package / Case: PowerPAK? 1212-8

封装: PowerPAK? 1212-8

库存612,324

MOSFET (Metal Oxide)

30V

7.4A (Ta)

4.5V, 10V

3V @ 250µA

56nC @ 10V

-

±20V

-

1.5W (Ta)

18 mOhm @ 11.7A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8

BSC097N06NSATMA1

Infineon Technologies

MOSFET N-CH 60V 46A TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存50,652

MOSFET (Metal Oxide)

60V

46A (Tc)

6V, 10V

3.3V @ 14µA

15nC @ 10V

1075pF @ 30V

±20V

-

2.5W (Ta), 36W (Tc)

9.7 mOhm @ 40A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

STQ1NK60ZR-AP

STMicroelectronics

MOSFET N-CH 600V 0.3A TO-92

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

库存554,052

MOSFET (Metal Oxide)

600V

300mA (Tc)

10V

4.5V @ 50µA

6.9nC @ 10V

94pF @ 25V

±30V

-

3W (Tc)

15 Ohm @ 400mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-92-3

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

FDB031N08

Fairchild/ON Semiconductor

MOSFET N-CH 75V 120A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 15160pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (TO-263AB)
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存19,176

MOSFET (Metal Oxide)

75V

120A (Tc)

10V

4.5V @ 250µA

220nC @ 10V

15160pF @ 25V

±20V

-

375W (Tc)

3.1 mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK (TO-263AB)

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ZVN4306GTA

Diodes Incorporated

MOSFET N-CH 60V 2.1A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta)
Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

库存181,752

MOSFET (Metal Oxide)

60V

2.1A (Ta)

5V, 10V

3V @ 1mA

-

350pF @ 25V

±20V

-

3W (Ta)

330 mOhm @ 3A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223

TO-261-4, TO-261AA

GSFR0603

Good-Ark Semiconductor

MOSFET, P-CH, SINGLE, -3.3A, -60

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 96mOhm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6L
Package / Case: SOT-23-6

封装: -

库存35,955

MOSFET (Metal Oxide)

60 V

3.3A (Ta)

4.5V, 10V

2.5V @ 250µA

15 nC @ 10 V

1080 pF @ 30 V

±20V

-

2W (Ta)

96mOhm @ 2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6L

SOT-23-6

IPB012N04NF2SATMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 197A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 189µA
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存2,400

MOSFET (Metal Oxide)

40 V

41A (Ta), 197A (Tc)

6V, 10V

3.4V @ 189µA

239 nC @ 10 V

11300 pF @ 20 V

±20V

-

3.8W (Ta), 250W (Tc)

1.25mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

2SK3980-TD-E

onsemi

N-CHANNEL MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

IXTH1N250

IXYS

MOSFET N-CH 2500V 1.5A TO-247AD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2500 V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3

封装: -

库存612

MOSFET (Metal Oxide)

2500 V

1.5A (Tc)

-

4V @ 250µA

41 nC @ 10 V

1660 pF @ 25 V

-

40Ohm @ 750mA, 10V

-

Through Hole

TO-247AD

TO-247-3

TMS70C02FNLR

Texas Instruments

MMP 8-BIT CMOS PLCC 44 PIN

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

NP48N055MHE-S18-AY

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-