图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存4,176 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 2.8V, 10V | 2V @ 250µA | 32nC @ 4.5V | 2530pF @ 15V | ±12V | - | 2.5W (Ta) | 12 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 30V 38A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,312 |
|
MOSFET (Metal Oxide) | 30V | 38A (Tc) | 4.5V, 10V | 1V @ 250µA | 26nC @ 4.5V | 870pF @ 25V | ±16V | - | 3.8W (Ta), 68W (Tc) | 26 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 30V 6.9A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存5,472 |
|
MOSFET (Metal Oxide) | 30V | 6.9A (Ta), 35A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 6.8nC @ 4.5V | 845pF @ 12V | ±20V | - | 1.26W (Ta), 32.6W (Tc) | 15 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
ON Semiconductor |
MOSFET N-CH 60V 75A TO220AB
|
封装: TO-220-3 |
库存390,072 |
|
MOSFET (Metal Oxide) | 60V | 75A (Ta) | 10V | 4V @ 250µA | 130nC @ 10V | 4510pF @ 25V | ±20V | - | 2.4W (Ta), 214W (Tj) | 9.5 mOhm @ 37.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 200V 110A ISOTOP
|
封装: ISOTOP |
库存3,216 |
|
MOSFET (Metal Oxide) | 200V | 110A (Tc) | 10V | 4V @ 250µA | 504nC @ 10V | 7900pF @ 25V | ±20V | - | 500W (Tc) | 24 mOhm @ 50A, 10V | 150°C (TJ) | Chassis Mount | ISOTOP? | ISOTOP |
||
STMicroelectronics |
MOSFET P-CH 30V 24A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存100,824 |
|
MOSFET (Metal Oxide) | 30V | 24A (Tc) | 5V, 10V | 1V @ 250µA | 28nC @ 5V | 1670pF @ 25V | ±16V | - | 70W (Tc) | 28 mOhm @ 12A, 10V | 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 20V 100A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存16,068 |
|
MOSFET (Metal Oxide) | 20V | 100A (Tc) | 4.5V, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | ±20V | - | 2.5W (Ta), 120W (Tc) | 6.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 480V 80A SOT-227B
|
封装: SOT-227-4, miniBLOC |
库存7,728 |
|
MOSFET (Metal Oxide) | 480V | 80A | 10V | 4V @ 8mA | 380nC @ 10V | 9890pF @ 25V | ±20V | - | 700W (Tc) | 45 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 900V 12A TO-247AD
|
封装: TO-247-3 |
库存8,268 |
|
MOSFET (Metal Oxide) | 900V | 12A (Tc) | 10V | 4.5V @ 4mA | 155nC @ 10V | 4200pF @ 25V | ±20V | - | 300W (Tc) | 900 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
IXYS |
MOSFET N-CH 55V 360A TO-247
|
封装: TO-247-3 |
库存4,384 |
|
MOSFET (Metal Oxide) | 55V | 360A (Tc) | 10V | 4V @ 250µA | 330nC @ 10V | 20000pF @ 25V | ±20V | - | 935W (Tc) | 2.4 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
IXYS |
MOSFET N-CH 1000V 2A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,120 |
|
MOSFET (Metal Oxide) | 1000V | 2A (Tc) | 10V | 4.5V @ 250µA | 18nC @ 10V | 825pF @ 25V | ±20V | - | 100W (Tc) | 7 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 800V 2A TO-220
|
封装: TO-220-3 |
库存6,992 |
|
MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 5.5V @ 50µA | 10.6nC @ 10V | 440pF @ 25V | ±30V | - | 70W (Tc) | 6 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
TRENCH 6 60V FET
|
封装: - |
库存5,008 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
TSC America Inc. |
MOSFET, SINGLE, P-CHANNEL, -60V,
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,912 |
|
MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 16.4nC @ 10V | 870pF @ 30V | ±20V | - | 20W (Tc) | 68 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 55V 31A TO-220AB
|
封装: TO-220-3 |
库存14,544 |
|
MOSFET (Metal Oxide) | 55V | 49A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1470pF @ 25V | ±20V | - | 94W (Tc) | 17.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET N CH 60V 20A TO252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,136 |
|
MOSFET (Metal Oxide) | 60V | 20A (Ta) | 4.5V, 10V | 3V @ 250µA | 22.4nC @ 10V | 1287pF @ 25V | ±20V | - | 42W (Tc) | 40 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 21A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存50,400 |
|
MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 2.35V @ 250µA | 60nC @ 4.5V | 6240pF @ 15V | ±12V | - | 2.5W (Ta) | 3.6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Texas Instruments |
MOSFET P-CH 20V 1.6A 4DSBGA
|
封装: 4-UFBGA, DSBGA |
库存3,280 |
|
MOSFET (Metal Oxide) | 20V | 1.6A (Ta) | 2.5V, 4.5V | 1.1V @ 250µA | 2.9nC @ 4.5V | 478pF @ 10V | -6V | - | 1W (Ta) | 47 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-DSBGA (1x1) | 4-UFBGA, DSBGA |
||
Vishay Siliconix |
MOSFET N-CH 600V 15A POWERPAK8X8
|
封装: 8-PowerTDFN |
库存25,320 |
|
MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 4V @ 250µA | 84nC @ 10V | 1449pF @ 100V | ±30V | - | 147W (Tc) | 266 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 8 x 8 | 8-PowerTDFN |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET P-CH 12V 32A PPAK SO-8
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 12 V | 32A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 164 nC @ 4.5 V | 10015 pF @ 6 V | ±8V | - | 83W (Tc) | 6mOhm @ 15A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
onsemi |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
MOSFET N-CH 40V 50A DPAK
|
封装: - |
库存5,838 |
|
MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 64 nC @ 10 V | 3515 pF @ 20 V | ±20V | - | 118W (Tc) | 6.7mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 250 V | 25A (Tc) | 10V | 4V @ 250µA | 123 nC @ 10 V | 3400 pF @ 25 V | ±30V | - | 221W (Tc) | 140mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
SMC Diode Solutions |
MOSFET SILICON CARBIDE SIC 1200V
|
封装: - |
库存900 |
|
SiCFET (Silicon Carbide) | 1200 V | 63A (Tj) | 20V | 4V @ 15mA | 130 nC @ 20 V | 4402 pF @ 1000 V | +25V, -10V | - | 446W (Tc) | 34mOhm @ 50A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
||
GeneSiC Semiconductor |
1700V 450M TO-263-7 G3R SIC MOSF
|
封装: - |
库存1,530 |
|
SiCFET (Silicon Carbide) | 1700 V | 8A (Tc) | 15V | 2.7V @ 2mA | 18 nC @ 15 V | 454 pF @ 1000 V | +15V, -5V | - | 71W (Tc) | 585mOhm @ 4A, 15V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Panjit International Inc. |
40V N-CHANNEL ENHANCEMENT MODE M
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 22.5A (Ta), 140A (Tc) | 4.5V, 10V | 2.3V @ 50µA | 41 nC @ 10 V | 2862 pF @ 25 V | ±20V | - | 3W (Ta), 115W (Tc) | 3.3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 600V 11A TO220
|
封装: - |
库存2,976 |
|
MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 5V @ 250µA | 47 nC @ 10 V | 1533 pF @ 100 V | ±30V | - | 179W (Tc) | 125mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
||
Taiwan Semiconductor Corporation |
600V, 38A, SINGLE N-CHANNEL POWE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 38A (Tc) | 10V | 4V @ 250µA | 62 nC @ 10 V | 2587 pF @ 100 V | ±30V | - | 69W (Tc) | 99mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
||
Fairchild Semiconductor |
P-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 250 V | 2.5A (Tc) | 10V | 4V @ 250µA | 20 nC @ 10 V | 540 pF @ 25 V | ±30V | - | 2.5W (Ta), 30W (Tc) | 2.4Ohm @ 1.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |