图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 28V 14.5A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存3,392 |
|
MOSFET (Metal Oxide) | 28V | 14.5A (Ta) | 4.5V | 1V @ 250µA | - | - | ±12V | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 20V 39A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存232,776 |
|
MOSFET (Metal Oxide) | 20V | 39A (Tc) | 4.5V, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | ±10V | - | 57W (Tc) | 20 mOhm @ 23A, 7V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 60V 0.99A TO-205
|
封装: TO-205AD, TO-39-3 Metal Can |
库存2,656 |
|
MOSFET (Metal Oxide) | 60V | 990mA (Tc) | 5V, 10V | 2V @ 1mA | - | 50pF @ 25V | ±20V | - | 725mW (Ta), 6.25W (Tc) | 3 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF (TO-39) | TO-205AD, TO-39-3 Metal Can |
||
Nexperia USA Inc. |
MOSFET N-CH 40V 100A LFPAK-SO8
|
封装: SOT-1023, 4-LFPAK |
库存4,624 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 126nC @ 10V | 7790pF @ 20V | ±20V | - | 288W (Tc) | 1.55 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
||
Microsemi Corporation |
MOSFET N-CH 1200V 3.5A TO-220
|
封装: TO-220-3 |
库存2,032 |
|
MOSFET (Metal Oxide) | 1200V | 3.5A (Tc) | 10V | 5V @ 1mA | 31nC @ 10V | 715pF @ 25V | ±30V | - | 135W (Tc) | 4.7 Ohm @ 1.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 [K] | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 100V 1.1A SOT223
|
封装: TO-261-4, TO-261AA |
库存711,876 |
|
MOSFET (Metal Oxide) | 100V | 1.1A (Tc) | 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | ±20V | - | 2W (Ta), 3.1W (Tc) | 1.2 Ohm @ 660mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
ON Semiconductor |
MOSFET N-CH 100V 132A SO8FL
|
封装: 8-PowerTDFN |
库存3,376 |
|
MOSFET (Metal Oxide) | 100V | - | 10V | 4V @ 250µA | 58nC @ 10V | 4200pF @ 50V | ±16V | - | 3.9W (Ta), 198W (Tc) | 4.8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
封装: 8-PowerTDFN, 5 Leads |
库存3,520 |
|
MOSFET (Metal Oxide) | 40V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 2V @ 250µA | 143nC @ 10V | 8862pF @ 25V | ±20V | - | 3.8W (Ta), 167W (Tc) | 0.82 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
STMicroelectronics |
MOSFET N-CH 650V 24A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,504 |
|
MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 4V @ 250µA | 41.5nC @ 10V | 1790pF @ 100V | ±25V | - | 190W (Tc) | 140 mOhm @ 12A, 10V | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 60V 100A F7 D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,864 |
|
MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 4V @ 250µA | 30nC @ 10V | 1980pF @ 25V | ±20V | - | 125W (Tc) | 5.6 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 17.3A TO-220AB
|
封装: TO-220-3 |
库存8,172 |
|
MOSFET (Metal Oxide) | 650V | 17.3A (Ta) | 10V | 3.5V @ 900µA | 45nC @ 10V | 1800pF @ 300V | ±30V | - | 165W (Tc) | 200 mOhm @ 8.7A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CHAN 80V TO252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,032 |
|
MOSFET (Metal Oxide) | 80V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 137nC @ 10V | 5350pF @ 25V | ±20V | - | 136W (Tc) | 25 mOhm @ 10.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
SMALL-SIGNAL PCH MOSFET UMOSVI
|
封装: - |
库存52,074 |
|
MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | 840pF @ 10V | +6V, -8V | - | 1.5W (Ta) | 32.5 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | - | - |
||
Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存16,176 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | ±16V | - | 230W (Tc) | 3.1 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 200V 1.7A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存26,502 |
|
MOSFET (Metal Oxide) | 200V | 1.7A (Ta) | 6V, 10V | 4V @ 250µA | 18nC @ 10V | - | ±20V | - | 1.5W (Ta) | 240 mOhm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 30V 3.6A SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存1,723,188 |
|
MOSFET (Metal Oxide) | 30V | 3.6A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 10nC @ 10V | 320pF @ 15V | ±12V | - | 1.1W (Ta), 1.7W (Tc) | 68 mOhm @ 2.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
onsemi |
PCH 1.8V DRIVE SERIES
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V SO-8 T&R 2
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 10A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 112 nC @ 10 V | 5697 pF @ 20 V | ±20V | - | 1.5W | 11mOhm @ 9.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Taiwan Semiconductor Corporation |
MOSFET N-CH 700V 8A ITO220AB
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 700 V | 8A (Tc) | 10V | 4V @ 250µA | 32 nC @ 10 V | 2006 pF @ 25 V | ±30V | - | 40W (Tc) | 900mOhm @ 4A, 10V | 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
||
onsemi |
FET 40V 9.7 MOHM MLP33
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 40 V | 12A (Ta), 14A (Tc) | 4.5V, 10V | 3V @ 250µA | 26 nC @ 10 V | 1850 pF @ 20 V | ±20V | - | 2.3W (Ta), 30W (Tc) | 9.7mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
||
Rohm Semiconductor |
MOSFET N-CH 100V 10A TO252
|
封装: - |
库存50,049 |
|
MOSFET (Metal Oxide) | 100 V | 10A (Ta) | 4V, 10V | 2.5V @ 1mA | 18 nC @ 10 V | 700 pF @ 25 V | ±20V | - | 20W (Tc) | 133mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
IC DISCRETE
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
FET 60V 50.0 MOHM SSOT6
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 60 V | 4.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 19 nC @ 10 V | 763 pF @ 25 V | ±20V | - | 1.6W (Ta) | 47mOhm @ 4.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V SO-8 T&R 2
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 10.8A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 112 nC @ 10 V | 5697 pF @ 20 V | ±20V | - | 1.6W | 11mOhm @ 9.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Renesas Electronics Corporation |
MOSFET N-CH
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 40V 100A TO263
|
封装: - |
库存2,400 |
|
MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 165 nC @ 10 V | 8800 pF @ 25 V | ±20V | - | 150W (Tc) | 2.2mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Microchip Technology |
MOSFET N-CH 500V 26A TO247
|
封装: - |
库存2,544 |
|
MOSFET (Metal Oxide) | 500 V | 26A (Tc) | - | 4V @ 1mA | 225 nC @ 10 V | 4440 pF @ 25 V | - | - | - | 200mOhm @ 500mA, 10V | - | Through Hole | TO-247 [B] | TO-247-3 |
||
Vishay Siliconix |
MOSFET P-CH 60V 6.7A TO220AB
|
封装: - |
库存486 |
|
MOSFET (Metal Oxide) | 60 V | 6.7A (Tc) | - | 4V @ 250µA | 12 nC @ 10 V | 270 pF @ 25 V | ±20V | - | 43W (Tc) | 500mOhm @ 4A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
YAGEO XSEMI |
MOSFET N-CH 100V 2.1A 3A SOT23
|
封装: - |
库存2,370 |
|
MOSFET (Metal Oxide) | 100 V | 2.1A (Ta), 3A (Tc) | 4.5V, 10V | 3V @ 250µA | 20 nC @ 10 V | 980 pF @ 25 V | ±20V | - | 1.38W (Ta) | 135mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Rohm Semiconductor |
PCH -40V -8A SMALL SIGNAL POWER
|
封装: - |
库存13,065 |
|
MOSFET (Metal Oxide) | 40 V | 8A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 37 nC @ 10 V | 2060 pF @ 20 V | ±20V | - | 1.1W (Ta) | 18.2mOhm @ 8A, 10V | 150°C (TJ) | Surface Mount | TSMT8 | 8-SMD, Flat Lead |