图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 19A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存3,488 |
|
MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 2.25V @ 250µA | 44nC @ 4.5V | 3710pF @ 15V | ±20V | - | 2.5W (Ta) | 4.5 mOhm @ 19A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 200V 7A TO-220AB
|
封装: TO-220-3 |
库存17,316 |
|
MOSFET (Metal Oxide) | 200V | 7A (Tc) | 10V | 4V @ 1mA | - | 530pF @ 25V | ±20V | - | 40W (Tc) | 400 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 24A 8DFN
|
封装: 8-PowerVDFN |
库存3,568 |
|
MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 15nC @ 4.5V | 1340pF @ 30V | ±20V | - | 38W (Tc) | 15 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerVDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 5.5A TO-220
|
封装: TO-220-3 |
库存4,816 |
|
MOSFET (Metal Oxide) | 600V | 5.5A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 810pF @ 25V | ±30V | - | 125W (Tc) | 2 Ohm @ 2.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 75A TO-262AA
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存2,128 |
|
MOSFET (Metal Oxide) | 80V | 75A (Tc) | 10V | 4V @ 250µA | 235nC @ 20V | 3750pF @ 25V | ±20V | - | 270W (Tc) | 10 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262AA | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 12.8A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,680 |
|
MOSFET (Metal Oxide) | 100V | 12.8A (Tc) | 5V, 10V | 2V @ 250µA | 12nC @ 5V | 520pF @ 25V | ±20V | - | 3.75W (Ta), 65W (Tc) | 180 mOhm @ 6.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 250V 2.8A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存5,616 |
|
MOSFET (Metal Oxide) | 250V | 2.8A (Tc) | 10V | 5V @ 250µA | 5.2nC @ 10V | 170pF @ 25V | ±30V | - | 3.13W (Ta), 45W (Tc) | 2.2 Ohm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 900V 26A MAX247
|
封装: TO-247-3 |
库存5,424 |
|
MOSFET (Metal Oxide) | 900V | 26A (Tc) | 10V | 4.5V @ 150µA | 490nC @ 10V | 12000pF @ 25V | ±30V | - | 450W (Tc) | 260 mOhm @ 14A, 10V | -65°C ~ 150°C (TJ) | Through Hole | MAX247? | TO-247-3 |
||
Diodes Incorporated |
MOSFET N-CH 60V 11.2A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存411,744 |
|
MOSFET (Metal Oxide) | 60V | 7.7A (Ta) | 4.5V, 10V | 3V @ 250µA | 29nC @ 10V | 1426pF @ 30V | ±20V | - | 2.15W (Ta) | 40 mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 600V 19A TO220-3
|
封装: TO-220-3 |
库存6,752 |
|
MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 4V @ 390µA | 34nC @ 10V | 1500pF @ 400V | ±20V | - | 92W (Tc) | 120 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 75A D2PAK
|
封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
库存4,384 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 1mA | 116nC @ 10V | 4200pF @ 25V | ±20V | Current Sensing | 272W (Tc) | 8 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
Texas Instruments |
MOSFET N-CH 60V 23A 8VSON
|
封装: 8-PowerTDFN |
库存150,012 |
|
MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 58nC @ 10V | 5070pF @ 30V | ±20V | - | 3.2W (Ta), 156W (Tc) | 3.2 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 800V 5A TO-220
|
封装: TO-220-3 |
库存19,680 |
|
MOSFET (Metal Oxide) | 800V | 5A (Tc) | 10V | 5V @ 100µA | 12nC @ 10V | 270pF @ 100V | ±30V | - | 85W (Tc) | 1.15 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 80V 40A 8TSDSON
|
封装: 8-PowerTDFN |
库存5,632 |
|
MOSFET (Metal Oxide) | 80V | 40A (Tc) | 6V, 10V | 3.8V @ 22µA | 18.5nC @ 10V | 1300pF @ 40V | ±20V | - | 50W (Tc) | 11 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存857,220 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 54nC @ 10V | 2071pF @ 15V | ±20V | - | 5W (Ta), 48W (Tc) | 4.7 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Infineon Technologies |
MOSFET N-CH 100V 190A D2PAK-7
|
封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
库存6,336 |
|
MOSFET (Metal Oxide) | 100V | 190A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11490pF @ 50V | ±16V | - | 370W (Tc) | 3.9 mOhm @ 110A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
Microchip Technology |
MOSFET N-CH 400V 500MA 3TO-220
|
封装: TO-220-3 |
库存13,284 |
|
MOSFET (Metal Oxide) | 400V | 500mA (Tj) | 0V | - | - | 300pF @ 25V | ±20V | Depletion Mode | 15W (Tc) | 25 Ohm @ 120mA, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 30V 2.2A SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存420,000 |
|
MOSFET (Metal Oxide) | 30V | 2.2A (Ta) | 1.5V, 4.5V | 1V @ 250µA | - | 290pF @ 10V | ±8V | - | 650mW (Ta) | 90 mOhm @ 2.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
MOSFET N-CH 800V 10.5A TO-247
|
封装: TO-247-3 |
库存36,012 |
|
MOSFET (Metal Oxide) | 800V | 10.5A (Tc) | 10V | 4.5V @ 100µA | 87nC @ 10V | 2620pF @ 25V | ±30V | - | 190W (Tc) | 750 mOhm @ 5.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
onsemi |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
INTEGRATED CIRCUIT
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Taiwan Semiconductor Corporation |
MOSFET N-CH 40V 16A/124A TO220
|
封装: - |
库存12,498 |
|
MOSFET (Metal Oxide) | 40 V | 16A (Ta), 124A (Tc) | - | 4V @ 250µA | 74 nC @ 10 V | 4928 pF @ 20 V | ±20V | - | 2W (Ta), 125W (Tc) | 4.3mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 250 V | 46A (Tc) | 10V | 5V @ 250µA | 110 nC @ 10 V | 4560 pF @ 25 V | ±30V | - | 330W (Tc) | 46mOhm @ 26A, 10V | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
DESC: MOSFET N-CH 80V 65A TOLLA
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TOLLA | 8-PowerSFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 26A/53A 8DFN
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 30 V | 26A (Ta), 53A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 30 nC @ 10 V | 1000 pF @ 15 V | ±20V | - | 6.2W (Ta), 26W (Tc) | 6.1mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerVDFN |
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EPC Space, LLC |
GAN FET HEMT 100V 5A 4FSMD-A
|
封装: - |
库存147 |
|
GaNFET (Gallium Nitride) | 100 V | 5A (Tc) | 5V | 2.5V @ 1.2mA | 2.2 nC @ 5 V | 233 pF @ 50 V | +6V, -4V | - | - | 45mOhm @ 5A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD | 4-SMD, No Lead |
||
Comchip Technology |
MOSFET N-CH 60V 0.115A SOT323
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 115mA (Ta) | 5V, 10V | 2.5V @ 250µA | - | 50 pF @ 25 V | ±20V | - | 200mW (Ta) | 5Ohm @ 500mA, 10V | 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
Goford Semiconductor |
N100V,65A,RD<8M@10V,VTH1.0V~2.5V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 65A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 35 nC @ 10 V | 2328 pF @ 50 V | ±20V | - | 100W (Tc) | 8mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Nexperia USA Inc. |
SMALL SIGNAL MOSFET FOR AUTOMOTI
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 20 V | 5A (Ta) | 2.5V, 8V | 1.3V @ 250µA | 16 nC @ 4.5 V | 1025 pF @ 10 V | ±12V | - | 610mW (Ta), 8.3W (Tc) | 33mOhm @ 5A, 8V | -55°C ~ 175°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
||
GaNPower |
GANFET N-CH 650V 30A DFN8X8
|
封装: - |
Request a Quote |
|
GaNFET (Gallium Nitride) | 650 V | 30A | 6V | 1.2V @ 3.5mA | 5.8 nC @ 6 V | 241 pF @ 400 V | +7.5V, -12V | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |