图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP |
MOSFET N-CH 30V 9A SOT96-1
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存7,664 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 800mV @ 250µA | 11.8nC @ 5V | - | ±20V | - | 2.5W (Ta) | 18.5 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 25.8A TO-3PF
|
封装: SC-94 |
库存17,076 |
|
MOSFET (Metal Oxide) | 100V | 25.8A (Tc) | 10V | 4V @ 250µA | 51nC @ 10V | 1500pF @ 25V | ±25V | - | 83W (Tc) | 52 mOhm @ 12.9A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3PF | SC-94 |
||
STMicroelectronics |
MOSFET N-CH 650V 8A TO-220FP
|
封装: TO-220-3 Full Pack |
库存242,484 |
|
MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 5V @ 250µA | 18nC @ 10V | 400pF @ 25V | ±30V | - | 30W (Tc) | 1 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 55V 29A TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,976 |
|
MOSFET (Metal Oxide) | 55V | 29A (Tc) | 10V | 4V @ 26µA | 18nC @ 10V | 513pF @ 25V | ±20V | - | 68W (Tc) | 40 mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Microsemi Corporation |
MOSFET N-CH 200V 56A TO-247
|
封装: TO-247-3 |
库存5,952 |
|
MOSFET (Metal Oxide) | 200V | 56A (Tc) | 10V | 4V @ 1mA | 195nC @ 10V | 4860pF @ 25V | ±30V | - | 300W (Tc) | 45 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
IXYS |
MOSFET N-CH 250V 30A TO-247
|
封装: TO-247-3 |
库存390,000 |
|
MOSFET (Metal Oxide) | 250V | 30A (Tc) | 10V | 4V @ 250µA | 136nC @ 10V | 3950pF @ 25V | ±20V | - | 200W (Tc) | 75 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
IXYS |
MOSFET N-CH 40V 300A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,888 |
|
MOSFET (Metal Oxide) | 40V | 300A (Tc) | 10V | 4V @ 250µA | 145nC @ 10V | 10700pF @ 25V | ±20V | - | 480W (Tc) | 2.5 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 150V 85A TO263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,032 |
|
MOSFET (Metal Oxide) | 150V | 85A (Tc) | 10V | 3.5V @ 250µA | 120nC @ 10V | 6285pF @ 25V | ±20V | - | 375W (Tc) | 19 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V POWERDI333
|
封装: 8-PowerWDFN |
库存7,568 |
|
MOSFET (Metal Oxide) | 60V | 15A (Ta), 80A (Tc) | 4.5V, 10V | 2V @ 250µA | 41.3nC @ 10V | 2090pF @ 30V | ±20V | - | 2.2W (Ta), 62.5W (Tc) | 6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
||
IXYS |
MOSFET N-CHANNEL 700V 8A TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,312 |
|
MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 5V @ 250µA | 12nC @ 10V | 800pF @ 10V | ±30V | - | 150W (Tc) | 500 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 50V 5.3A I-PAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存243,564 |
|
MOSFET (Metal Oxide) | 50V | 5.3A (Tc) | 10V | 4V @ 250µA | 9.1nC @ 10V | 240pF @ 25V | ±20V | - | 25W (Tc) | 500 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
||
IXYS |
MOSFET N-CH 500V 53A SOT-227
|
封装: SOT-227-4, miniBLOC |
库存12,894 |
|
MOSFET (Metal Oxide) | 500V | 53A | 10V | 4.5V @ 250µA | 610nC @ 10V | 24000pF @ 25V | ±30V | - | 735W (Tc) | 100 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
onsemi |
MOSFET N-CH 500V 45A TO247-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 45A (Tc) | 10V | 5V @ 250µA | 137 nC @ 10 V | 6630 pF @ 25 V | ±30V | - | 625W (Tc) | 120mOhm @ 22.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
HIGH POWER_NEW
|
封装: - |
Request a Quote |
|
- | 650 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HSOF-8-3 | 8-PowerSFN |
||
Rohm Semiconductor |
MOSFET P-CH 30V 3.1A DFN1616-6W
|
封装: - |
库存17,556 |
|
MOSFET (Metal Oxide) | 30 V | 3.1A (Ta) | - | 2.5V @ 1mA | 4.8 nC @ 5 V | 460 pF @ 10 V | ±20V | - | 1.5W (Ta) | 105mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | DFN1616-6W | 6-PowerWFDFN |
||
Motorola |
PFET TSOP6S 20V 0.098R TR
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 100V 72A TO268
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
库存15,000 |
|
MOSFET (Metal Oxide) | 150 V | 14.1A (Ta), 148A (Tc) | 8V, 10V | 4.6V @ 159µA | 60 nC @ 10 V | 4700 pF @ 75 V | ±20V | - | 2.5W (Ta), 278W (Tc) | 6.32mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSON-8-U04 | 8-PowerTDFN |
||
YAGEO XSEMI |
MOSFET N-CH 100V 300A TOLL
|
封装: - |
库存3,000 |
|
MOSFET (Metal Oxide) | 100 V | 300A (Tc) | 10V | 4V @ 250µA | 304 nC @ 10 V | 16960 pF @ 80 V | ±20V | - | 3.75W (Ta), 333W (Tc) | 1.5mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TOLL | 8-PowerSFN |
||
Vishay Siliconix |
MOSFET N-CH 60V 32A PPAK SO-8
|
封装: - |
库存35,085 |
|
MOSFET (Metal Oxide) | 60 V | 32A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 44 nC @ 10 V | 2086 pF @ 30 V | ±20V | - | 45W (Tc) | 17mOhm @ 7.1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
onsemi |
POWER MOSFET, N-CHANNEL, SUPERFE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 24A (Tj) | 10V | 4V @ 2.1mA | 44 nC @ 10 V | 2200 pF @ 400 V | ±30V | - | 37W (Tc) | 125mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET P-CH 12V 6.8A 8-TSSOP
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 12 V | 6.8A (Ta) | - | 850mV @ 450µA | 70 nC @ 4.5 V | - | - | - | - | 12.5mOhm @ 8A, 4.5V | - | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
||
Goford Semiconductor |
N30V,8A,RD<20M@10V,VTH1.0V~2.0V,
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 8A (Tc) | 4.5V, 10V | 2V @ 250µA | 15 nC @ 10 V | 681 pF @ 15 V | ±20V | - | 17W (Tc) | 20mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN (2x2) | 6-WDFN Exposed Pad |
||
onsemi |
MOSFET N-CH SOT23
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 280mA (Tc) | 5V, 10V | 2.5V @ 250µA | - | 50 pF @ 25 V | ±20V | - | 300mW (Tc) | 2Ohm @ 500mA, 10V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
N-CHANNEL 60-V (D-S) MOSFET
|
封装: - |
库存6,495 |
|
MOSFET (Metal Oxide) | 60 V | 1.9A (Ta), 2.3A (Tc) | 4.5V, 10V | 3V @ 250µA | 6.8 nC @ 10 V | 190 pF @ 30 V | ±20V | - | 1.09W (Ta), 1.66W (Tc) | 156mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Panjit International Inc. |
60V N-CHANNEL ENHANCEMENT MODE M
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 13.5 nC @ 4.5 V | 1574 pF @ 25 V | ±20V | - | 93W (Tc) | 17mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Panjit International Inc. |
SOT-523, MOSFET
|
封装: - |
库存224,685 |
|
MOSFET (Metal Oxide) | 60 V | 115mA (Ta) | 4.5V, 10V | 2.5V @ 250µA | 0.8 nC @ 4.5 V | 35 pF @ 25 V | ±20V | - | 200mW (Ta) | 3Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 Flat Leads | SC-89, SOT-490 |
||
Vishay Siliconix |
MOSFET N-CH 500V 2.4A DPAK
|
封装: - |
库存7,500 |
|
MOSFET (Metal Oxide) | 500 V | 2.4A (Tc) | 10V | 4V @ 250µA | 19 nC @ 10 V | 360 pF @ 25 V | ±20V | - | 2.5W (Ta), 42W (Tc) | 3Ohm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET N-CH 20V 15.2A 6UDFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 15.2A (Ta) | 1.5V, 4.5V | 1.2V @ 250µA | 42.3 nC @ 10 V | 1439 pF @ 10 V | ±12V | - | 1.8W (Ta) | 9mOhm @ 8.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 | 6-UDFN Exposed Pad |
||
IXYS |
MOSFET N-CH 150V 76A TO247
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 76A (Tc) | 10V | 4.5V @ 250µA | 97 nC @ 10 V | 5800 pF @ 25 V | ±20V | - | 350W (Tc) | 22mOhm @ 38A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |