图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 20V 6.5A 6TSOP
|
封装: SOT-23-6 |
库存4,448 |
|
MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 22nC @ 5V | 1310pF @ 15V | ±12V | - | 2W (Ta) | 30 mOhm @ 6.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro6?(SOT23-6) | SOT-23-6 |
||
Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,264 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 140µA | 195nC @ 10V | 15750pF @ 25V | ±20V | - | 188W (Tc) | 2.4 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 27A DIRECTFET
|
封装: DirectFET? Isometric MT |
库存202,884 |
|
MOSFET (Metal Oxide) | 30V | 27A (Ta), 94A (Tc) | 4.5V, 7V | 2V @ 250µA | 75nC @ 4.5V | 6930pF @ 15V | ±12V | - | 3.6W (Ta), 42W (Tc) | 3.3 mOhm @ 25A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MT | DirectFET? Isometric MT |
||
ON Semiconductor |
MOSFET N-CH 100V 40A SMP
|
封装: TO-220-3, Short Tab |
库存4,432 |
|
MOSFET (Metal Oxide) | 100V | 40A (Ta) | 4V, 10V | 2.6V @ 1mA | 73nC @ 10V | 4200pF @ 20V | ±20V | - | 1.65W (Ta), 65W (Tc) | 33 mOhm @ 20A, 10V | 150°C (TJ) | Through Hole | SMP | TO-220-3, Short Tab |
||
Vishay Siliconix |
MOSFET P-CH 20V 5.2A 1206-8
|
封装: 8-SMD, Flat Lead |
库存7,392 |
|
MOSFET (Metal Oxide) | 20V | 5.2A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 25nC @ 4.5V | - | ±8V | - | 1.3W (Ta) | 32 mOhm @ 5.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
||
STMicroelectronics |
MOSFET N-CH 30V 75A POWERFLAT56
|
封装: 8-PowerVDFN |
库存5,712 |
|
MOSFET (Metal Oxide) | 30V | 75A (Tc) | 4.5V, 10V | 1V @ 250µA | 11.8nC @ 4.5V | 1510pF @ 25V | ±18V | - | 60W (Tc) | 6.1 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
||
STMicroelectronics |
MOSFET N-CH 550V 20A TO-220FP
|
封装: TO-220-3 Full Pack |
库存92,760 |
|
MOSFET (Metal Oxide) | 550V | 20A (Tc) | 10V | 5V @ 250µA | 56nC @ 10V | 1480pF @ 25V | ±30V | - | 45W (Tc) | 250 mOhm @ 10A, 10V | -65°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET HIGH POWER_NEW
|
封装: - |
库存6,656 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 55V 29A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存72,192 |
|
MOSFET (Metal Oxide) | 55V | 29A (Tc) | 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | ±20V | - | 3.8W (Ta), 68W (Tc) | 40 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V TO220-3
|
封装: TO-220-3 Full Pack |
库存4,240 |
|
MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | ±20V | Super Junction | 20W (Tc) | 1.5 Ohm @ 1.1A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
||
IXYS |
MOSFET N-CH 100V 75A TO-247AD
|
封装: TO-247-3 |
库存12,132 |
|
MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 4V @ 4mA | 180nC @ 10V | 3700pF @ 25V | ±20V | - | 300W (Tc) | 20 mOhm @ 37.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 30V 20A POLARPAK
|
封装: PolarPak? |
库存524,904 |
|
MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 13.4nC @ 4.5V | 1380pF @ 25V | ±16V | - | 5.2W (Tc) | 7.8 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PolarPak? | PolarPak? |
||
Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,808 |
|
MOSFET (Metal Oxide) | 60V | 10A (Tc) | 4V, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | ±10V | - | 3.7W (Ta), 43W (Tc) | 200 mOhm @ 6A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 60V TO252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存41,064 |
|
MOSFET (Metal Oxide) | 60V | - | 4.5V, 10V | 3V @ 250µA | 17nC @ 10V | 670pF @ 25V | ±20V | - | 3W (Ta), 100W (Tc) | 31 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
MOSFET P-CH 20V 1.5A TSMT5
|
封装: SOT-23-5 Thin, TSOT-23-5 |
库存5,648 |
|
MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 2V @ 1mA | 4.2nC @ 4.5V | 325pF @ 10V | ±12V | Schottky Diode (Isolated) | 1.25W (Ta) | 200 mOhm @ 1.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |
||
STMicroelectronics |
MOSFET N-CH 600V 17A TO-220FP
|
封装: TO-220-3 Full Pack |
库存576,528 |
|
MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 4V @ 250µA | 46nC @ 10V | 1400pF @ 50V | ±30V | - | 30W (Tc) | 190 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 80A TO-220
|
封装: TO-220-3 |
库存7,520 |
|
MOSFET (Metal Oxide) | 80V | 80A (Tc) | 10V | 4V @ 500µA | 37nC @ 10V | 2500pF @ 40V | ±20V | - | 103W (Tc) | 8.4 mOhm @ 23A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Microsemi Corporation |
MOSFET N-CH 100V 142A SOT227
|
封装: SOT-227-4, miniBLOC |
库存4,480 |
|
MOSFET (Metal Oxide) | 100V | 142A | 10V | 4V @ 2.5mA | 300nC @ 10V | 8600pF @ 25V | ±30V | - | 450W (Tc) | 11 mOhm @ 71A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
||
Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223
|
封装: TO-261-4, TO-261AA |
库存13,212 |
|
MOSFET (Metal Oxide) | 200V | 660mA (Ta) | 0V, 10V | 1V @ 400µA | 14nC @ 5V | 430pF @ 25V | ±20V | Depletion Mode | 1.8W (Ta) | 1.8 Ohm @ 660mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Microchip Technology |
MOSFET N-CH 100V 1.7A TO39-3
|
封装: TO-205AD, TO-39-3 Metal Can |
库存5,456 |
|
MOSFET (Metal Oxide) | 100V | 1.7A (Tj) | 5V, 10V | 2.4V @ 10mA | - | 500pF @ 25V | ±20V | - | 360mW (Tc) | 350 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 46A 8DFN
|
封装: 8-PowerWDFN |
库存35,532 |
|
MOSFET (Metal Oxide) | 30V | 46A (Ta), 50A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 65nC @ 10V | 2994pF @ 15V | ±20V | - | 6.2W (Ta), 83W (Tc) | 1.7 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 61V~100V U-DFN2020
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 2.2A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 6.7 nC @ 10 V | 384 pF @ 25 V | ±20V | - | 1.1W (Ta) | 225mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
||
onsemi |
WIDE SOA
|
封装: - |
库存4,200 |
|
MOSFET (Metal Oxide) | 30 V | 35A (Ta) | 10V | 2.2V @ 330µA | 224.9 nC @ 10 V | 18500 pF @ 15 V | ±20V | - | 1.1W (Ta) | 0.58mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
onsemi |
NCH 4V DRIVE SERIES
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 700V 3A SOT223
|
封装: - |
库存17,073 |
|
MOSFET (Metal Oxide) | 700 V | 3A (Tc) | 10V | 3.5V @ 30µA | 3.8 nC @ 10 V | 130 pF @ 400 V | ±16V | - | 6W (Tc) | 2Ohm @ 500mA, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
||
Vishay Siliconix |
MOSFET N-CHANNEL 600V 7A TO220
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 4V @ 250µA | 40 nC @ 10 V | 680 pF @ 100 V | ±30V | - | 31W (Tc) | 600mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
||
Renesas Electronics Corporation |
MOSFET N-CH 55V 80A TO263
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 55 V | 80A (Tc) | - | 2.5V @ 250µA | 135 nC @ 10 V | 6900 pF @ 25 V | - | - | 1.8W (Ta), 115W (Tc) | 6.6mOhm @ 40A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 60V 10A TO220AB
|
封装: - |
库存5,826 |
|
MOSFET (Metal Oxide) | 60 V | 10A (Tc) | - | 4V @ 250µA | 11 nC @ 10 V | 300 pF @ 25 V | ±20V | - | 43W (Tc) | 200mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V U-DFN2020-
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 11.8A (Ta) | 4.5V, 10V | 3V @ 250µA | 17.1 nC @ 10 V | 1179 pF @ 20 V | ±20V | - | 800mW (Ta) | 9.5mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
||
Goford Semiconductor |
MOSFET P-CH 60V 23A TO-251
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | - | 23A (Tc) | 4.5V, 10V | 3V @ 250µA | - | - | ±20V | - | 50W (Tc) | 70mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |