图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,872 |
|
MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 2.2V @ 90µA | 170nC @ 10V | 13000pF @ 25V | ±16V | - | 150W (Tc) | 3.5 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 650V 4.5A TO251-3
|
封装: TO-251-3 Stub Leads, IPak |
库存7,168 |
|
MOSFET (Metal Oxide) | 650V | 4.5A (Tc) | 10V | 3.9V @ 200µA | 25nC @ 10V | 490pF @ 25V | ±20V | - | 50W (Tc) | 950 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
||
Infineon Technologies |
MOSFET N-CH 30V 61A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,296 |
|
MOSFET (Metal Oxide) | 30V | 61A (Tc) | 4.5V, 10V | 3V @ 250µA | 19nC @ 4.5V | 1990pF @ 15V | ±20V | - | 87W (Tc) | 13 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET P-CH 55V 12A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存443,256 |
|
MOSFET (Metal Oxide) | 55V | 12A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | ±20V | - | 3.8W (Ta), 45W (Tc) | 175 mOhm @ 7.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 60V 24A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存3,712 |
|
MOSFET (Metal Oxide) | 60V | 24A (Ta) | 5V | 2V @ 250µA | 32nC @ 5V | 1140pF @ 25V | ±15V | - | 1.36W (Ta), 62.5W (Tj) | 45 mOhm @ 10A, 5V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 5.3A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存768,012 |
|
MOSFET (Metal Oxide) | 200V | 5.3A (Tc) | 10V | 5V @ 250µA | 10nC @ 10V | 400pF @ 25V | ±30V | - | 2.5W (Ta), 45W (Tc) | 690 mOhm @ 2.65A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET N-CH 60V 0.27A TO92-3
|
封装: E-Line-3 |
库存6,384 |
|
MOSFET (Metal Oxide) | 60V | 270mA (Ta) | 10V | 3V @ 1mA | - | 60pF @ 10V | ±20V | - | 625mW (Ta) | 5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
Vishay Siliconix |
MOSFET N-CH 250V 23A TO-247AC
|
封装: TO-247-3 |
库存102,084 |
|
MOSFET (Metal Oxide) | 250V | 23A (Tc) | 10V | 4V @ 250µA | 100nC @ 10V | 2040pF @ 25V | ±20V | - | 220W (Tc) | 125 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Vishay Siliconix |
MOSFET P-CH 200V 4.3A TO220FP
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存82,752 |
|
MOSFET (Metal Oxide) | 200V | 4.3A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 700pF @ 25V | ±20V | - | 35W (Tc) | 800 mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
Infineon Technologies |
MOSFET N-CH 250V 3.8A PQFN56
|
封装: 8-VQFN |
库存5,200 |
|
MOSFET (Metal Oxide) | 250V | 3.8A (Ta) | 10V | 5V @ 150µA | 56nC @ 10V | 2150pF @ 50V | ±20V | - | 3.6W (Ta), 8.3W (Tc) | 100 mOhm @ 5.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-QFN | 8-VQFN |
||
IXYS |
MOSFET N-CH 300V 73A SOT-227B
|
封装: SOT-227-4, miniBLOC |
库存2,800 |
|
MOSFET (Metal Oxide) | 300V | 73A | 10V | 4V @ 4mA | 195nC @ 10V | 5400pF @ 25V | ±30V | - | 500W (Tc) | 45 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
Vishay Siliconix |
MOSFET N-CH 500V 2.4A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,784 |
|
MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 360pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 3 Ohm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 60V 32A PPAK SO-8
|
封装: - |
库存3,264 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 60V 71A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,504 |
|
MOSFET (Metal Oxide) | 60V | 56A (Tc) | 6V, 10V | 3.7V @ 100µA | 87nC @ 10V | 3020pF @ 25V | ±20V | - | 99W (Tc) | 7.9 mOhm @ 43A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET P-CH 20V 2.6A SOT23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存1,452,840 |
|
MOSFET (Metal Oxide) | 20V | 2.6A (Ta) | 2.5V, 4.5V | 1.1V @ 10µA | 2.9nC @ 4.5V | 220pF @ 16V | ±12V | - | 1.3W (Ta) | 135 mOhm @ 2.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 1.6A SSOT3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存308,568 |
|
MOSFET (Metal Oxide) | 30V | 1.6A (Ta) | 4.5V, 10V | 2V @ 250µA | 5nC @ 5V | 245pF @ 10V | ±20V | - | 500mW (Ta) | 85 mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存36,018 |
|
MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 1380pF @ 25V | ±20V | - | 110W (Tc) | 14.5 mOhm @ 36A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Cree/Wolfspeed |
1000V, 65 MOHM, G3 SIC MOSFET
|
封装: TO-247-4 |
库存19,500 |
|
SiCFET (Silicon Carbide) | 1000V | 35A (Tc) | 15V | 3.5V @ 5mA | 35nC @ 15V | 660pF @ 600V | +19V, -8V | - | 113.5W (Tc) | 78 mOhm @ 20A, 15V | -55°C ~ 150°C (TJ) | - | TO-247-4L | TO-247-4 |
||
STMicroelectronics |
MOSFET N-CH 1KV 8.3A TO-247
|
封装: TO-247-3 |
库存49,500 |
|
MOSFET (Metal Oxide) | 1000V | 8.3A (Tc) | 10V | 4.5V @ 100µA | 162nC @ 10V | 3500pF @ 25V | ±30V | - | 230W (Tc) | 1.38 Ohm @ 4.15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Vishay Siliconix |
MOSFET P-CH 40V 50A TO252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存129,060 |
|
MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 1V @ 250µA (Min) | 130nC @ 10V | 5400pF @ 25V | ±20V | - | 3W (Ta), 100W (Tc) | 15 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Goford Semiconductor |
P-20V,RD(MAX)<18.4M@-4.5V,RD(MAX
|
封装: - |
库存5,190 |
|
MOSFET (Metal Oxide) | 20 V | 11A (Tc) | 2.5V, 4.5V | 1.1V @ 250µA | 47 nC @ 10 V | 2455 pF @ 10 V | ±12V | - | 3.3W (Tc) | 18.4mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
MOSFET N-CH 60V 3.5A 6CPH
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 3.5A (Ta) | 4.5V, 10V | 2.6V @ 1mA | 10 nC @ 10 V | 505 pF @ 20 V | ±20V | - | 970mW (Ta) | 78mOhm @ 2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
||
Renesas Electronics Corporation |
MOSFET P-CH 30V 8-TSSOP
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 7A (Ta) | - | 2.5V @ 1mA | 38 nC @ 10 V | 2180 pF @ 10 V | - | - | - | 16mOhm @ 3.5A, 10V | - | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
||
Diodes Incorporated |
MOSFET BVDSS: 41V~60V TO252 T&R
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 88A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 34.9 nC @ 10 V | 2162 pF @ 30 V | ±20V | - | 3.1W (Ta), 89.3W (Tc) | 6.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
PSMN4R8-100YSE/SOT1023/4 LEADS
|
封装: - |
库存6,891 |
|
MOSFET (Metal Oxide) | 100 V | 120A (Ta) | 10V | 3.6V @ 1mA | 120 nC @ 10 V | 8290 pF @ 50 V | ±20V | - | 294W (Ta) | 4.8mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
||
Infineon Technologies |
TRENCH 40<-<100V
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 500V 9.9A TO220-3
|
封装: - |
库存1,500 |
|
MOSFET (Metal Oxide) | 500 V | 9.9A (Tc) | 13V | 3.5V @ 260µA | 24.8 nC @ 10 V | 584 pF @ 100 V | ±20V | - | 73W (Tc) | 380mOhm @ 3.2A, 13V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
||
onsemi |
MOSFET N-CH 120V 18.5A/114A 8QFN
|
封装: - |
库存12,081 |
|
MOSFET (Metal Oxide) | 120 V | 18.5A (Ta), 114A (Tc) | 6V, 10V | 4V @ 370A | 82 nC @ 10 V | 6460 pF @ 60 V | ±20V | - | 2.7W (Ta), 106W (Tc) | 4mOhm @ 67A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
||
Vishay Siliconix |
N-CHANNEL 600V
|
封装: - |
库存2,715 |
|
MOSFET (Metal Oxide) | 600 V | 8A (Tc) | 10V | 4V @ 250µA | 86 nC @ 10 V | 1920 pF @ 100 V | ±30V | - | 35W (Tc) | 180mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DP(
|
封装: - |
库存2,790 |
|
MOSFET (Metal Oxide) | 600 V | 4A (Ta) | 10V | 4.4V @ 1mA | 12 nC @ 10 V | 600 pF @ 25 V | ±30V | - | 100W (Tc) | 1.7Ohm @ 2A, 10V | 150°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |