图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH TO220-3
|
封装: TO-220-3 |
库存4,992 |
|
MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 2.2V @ 90µA | 170nC @ 10V | 13000pF @ 25V | ±16V | - | 150W (Tc) | 3.7 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET P-CH 250V 0.19A SOT-89
|
封装: TO-243AA |
库存6,592 |
|
MOSFET (Metal Oxide) | 250V | 190mA (Ta) | 2.8V, 10V | 2V @ 130µA | 6.1nC @ 10V | 104pF @ 25V | ±20V | - | 1W (Ta) | 12 Ohm @ 190mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89 | TO-243AA |
||
Infineon Technologies |
MOSFET N-CH 20V 39A TO-220AB
|
封装: TO-220-3 |
库存106,776 |
|
MOSFET (Metal Oxide) | 20V | 39A (Tc) | 4.5V, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | ±10V | - | 57W (Tc) | 20 mOhm @ 23A, 7V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 8V 4.53A SC70-6
|
封装: 6-TSSOP, SC-88, SOT-363 |
库存3,792 |
|
MOSFET (Metal Oxide) | 8V | 4.53A (Ta), 6.04A (Tc) | 1.5V, 4.5V | 1V @ 250µA | 7.05nC @ 5V | 535pF @ 4V | ±5V | - | 1.56W (Ta), 2.78W (Tc) | 47 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
||
Diodes Incorporated |
MOSFET N-CH 60V 0.2A SOT363
|
封装: 6-TSSOP, SC-88, SOT-363 |
库存408,840 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 5V, 10V | 3V @ 1mA | - | 50pF @ 25V | ±20V | Schottky Diode (Isolated) | 200mW (Ta) | 3 Ohm @ 50mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-363 | 6-TSSOP, SC-88, SOT-363 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 12A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存170,832 |
|
MOSFET (Metal Oxide) | 60V | 12A (Tc) | 10V | 4V @ 250µA | 23nC @ 20V | 300pF @ 25V | ±20V | - | 53W (Tc) | 150 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 400V 2A TO-220AB
|
封装: TO-220-3 |
库存19,380 |
|
MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 170pF @ 25V | ±20V | - | 36W (Tc) | 3.6 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 8-MLP
|
封装: 8-PowerWDFN |
库存237,492 |
|
MOSFET (Metal Oxide) | 30V | 18.8A (Ta), 24A (Tc) | 4.5V, 10V | 3V @ 250µA | 76nC @ 10V | 4865pF @ 15V | ±20V | - | 2.3W (Ta), 45W (Tc) | 4.2 mOhm @ 18.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
||
Infineon Technologies |
MOSFET N-CH 150V 41A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存387,036 |
|
MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 5.5V @ 250µA | 110nC @ 10V | 2520pF @ 25V | ±30V | - | 3.1W (Ta) | 45 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 75A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存17,172 |
|
MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 4V @ 1mA | 90nC @ 10V | 4900pF @ 25V | ±20V | - | 300W (Tc) | 15 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET N-CH 20V 1.8A SC-70
|
封装: SC-70, SOT-323 |
库存5,088 |
|
MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 5.85nC @ 4.5V | 289pF @ 10V | ±8V | - | 395mW (Ta) | 65 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 400V 4.2A TO252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存165,876 |
|
MOSFET (Metal Oxide) | 400V | 4.2A (Tc) | 10V | 4.5V @ 250µA | 8.5nC @ 10V | 400pF @ 25V | ±30V | - | 78W (Tc) | 1.6 Ohm @ 1A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
MOSFET N-CH 600V 20A TO-220FM
|
封装: TO-220-2 Full Pack |
库存4,016 |
|
MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 4.5V @ 1mA | 65nC @ 10V | 2040pF @ 25V | ±30V | - | 50W (Tc) | 220 mOhm @ 10A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
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Transphorm |
GAN FET 600V 9A TO220
|
封装: TO-220-3 |
库存7,176 |
|
GaNFET (Gallium Nitride) | 600V | 9A (Tc) | 8V | 2.5V @ 250µA | 9.3nC @ 4.5V | 760pF @ 480V | ±18V | - | 65W (Tc) | 350 mOhm @ 5.5A, 8V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 300A 8HSOF
|
封装: 8-PowerSFN |
库存19,104 |
|
MOSFET (Metal Oxide) | 30V | 300A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 163nC @ 4.5V | 24000pF @ 15V | ±20V | - | 3.8W (Ta), 300W (Tc) | 0.4 mOhm @ 150A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
||
Rohm Semiconductor |
MOSFET P-CH 20V 3A TSMT3
|
封装: SC-96 |
库存2,122,752 |
|
MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 2V @ 1mA | 9.3nC @ 4.5V | 840pF @ 10V | ±12V | - | 1W (Ta) | 75 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 300A PSOF8
|
封装: 8-PowerSFN |
库存20,868 |
|
MOSFET (Metal Oxide) | 40V | 300A (Tc) | 10V | 4V @ 250µA | 296nC @ 10V | 15900pF @ 25V | ±20V | - | 429W (Tj) | 0.65 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PSOF | 8-PowerSFN |
||
Renesas Electronics Corporation |
SMALL SIGNAL N-CHANNEL MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 4.5V, 10V | 3V @ 250µA | 15 nC @ 10 V | 485 pF @ 25 V | ±16V | - | 49W (Tc) | 63mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 20V 26A PQFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 26A (Ta), 40A (Tc) | - | 1.1V @ 50µA | 78 nC @ 4.5 V | 3620 pF @ 10 V | - | - | - | 2.5mOhm @ 20A, 4.5V | - | Surface Mount | PQFN (3x3) | 8-VQFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 2A UF6
|
封装: - |
库存7,470 |
|
MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.5V, 4V | 1V @ 1mA | 3.4 nC @ 4 V | 195 pF @ 10 V | ±10V | - | 500mW (Ta) | 126mOhm @ 1A, 4V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
||
Panjit International Inc. |
600V N-CHANNEL MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 4A (Ta) | 10V | 4V @ 250µA | 11.1 nC @ 10 V | 450 pF @ 25 V | ±30V | - | 77W (Tc) | 2.4Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET P-CH 20V 780MA SOT-23
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 780mA (Ta) | - | 1.5V @ 250µA | 3.6 nC @ 4.45 V | 97 pF @ 15 V | - | - | - | 600mOhm @ 610mA, 4.5V | - | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT23 T&R
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 3.9A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 13.4 nC @ 10 V | 563 pF @ 25 V | ±20V | - | 1W | 65mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
EPC Space, LLC |
GAN FET HEMT 200V 4A 4FSMD-A
|
封装: - |
库存75 |
|
GaNFET (Gallium Nitride) | 200 V | 4A (Tc) | 5V | 2.8V @ 1mA | 3 nC @ 5 V | 150 pF @ 100 V | +6V, -4V | - | - | 130mOhm @ 4A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD | 4-SMD, No Lead |
||
Infineon Technologies |
AUTOMOTIVE_SICMOS
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 6A 8SOIC
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 6A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 23 nC @ 10 V | 720 pF @ 15 V | ±20V | - | 2.5W (Ta) | 42mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
PTNG 100V LL LFPAK4
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 100 V | 11.6A (Ta), 52A (Tc) | 4.5V, 10V | 3V @ 77µA | 19 nC @ 10 V | 1338 pF @ 50 V | ±20V | - | 3.6W (Ta), 72W (Tc) | 12.2mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
||
Infineon Technologies |
SILICON CARBIDE MOSFET PG-TO263-
|
封装: - |
库存2,934 |
|
SiCFET (Silicon Carbide) | 650 V | 6A (Tc) | 18V | 5.7V @ 1.1mA | 6 nC @ 18 V | 201 pF @ 400 V | +23V, -5V | - | 65W (Tc) | 346mOhm @ 3.6A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
IXYS |
MOSFET N-CH 200V 36A TO263AA
|
封装: - |
库存555 |
|
MOSFET (Metal Oxide) | 200 V | 36A (Tc) | 10V | 4.5V @ 500µA | 21 nC @ 10 V | 1425 pF @ 25 V | ±20V | - | 176W (Tc) | 45mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA (IXFA) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |