图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 50A TO220-3
|
封装: TO-220-3 |
库存3,152 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 4V @ 34µA | 36nC @ 10V | 2900pF @ 30V | ±20V | - | 71W (Tc) | 9.3 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 90A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,392 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4V @ 95µA | 120nC @ 10V | 10000pF @ 20V | ±20V | - | 167W (Tc) | 2.3 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 100V 12A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存3,824 |
|
MOSFET (Metal Oxide) | 100V | 12A (Ta) | 5V | 2V @ 250µA | 20nC @ 5V | 700pF @ 25V | ±20V | - | 1.28W (Ta), 56.6W (Tc) | 146 mOhm @ 6A, 5V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
NXP |
MOSFET N-CH 40V 75A TO220AB
|
封装: TO-220-3 |
库存6,896 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 2V @ 1mA | 44.2nC @ 5V | 3965pF @ 25V | ±15V | - | 200W (Tc) | 5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 50V 9.9A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存624,312 |
|
MOSFET (Metal Oxide) | 50V | 9.9A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 490pF @ 25V | ±20V | - | 42W (Tc) | 280 mOhm @ 5.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 500V 45A TO-247
|
封装: TO-247-3 |
库存38,988 |
|
MOSFET (Metal Oxide) | 500V | 45A (Tc) | 10V | 5V @ 250µA | 120nC @ 10V | 3600pF @ 25V | ±30V | - | 417W (Tc) | 100 mOhm @ 22.5A, 10V | -65°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 57A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,568 |
|
MOSFET (Metal Oxide) | 60V | 57A (Tc) | 10V | 4V @ 250µA | 65nC @ 10V | 1690pF @ 25V | ±20V | - | 92W (Tc) | 12 mOhm @ 34A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 55V 131A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存119,760 |
|
MOSFET (Metal Oxide) | 55V | 131A (Tc) | 10V | 4V @ 250µA | 260nC @ 10V | 5480pF @ 25V | ±20V | - | 200W (Tc) | 5.3 mOhm @ 101A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 30V 12A 8DSO
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存2,480 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta) | 6V, 10V | 3.1V @ 150µA | 81nC @ 10V | 6750pF @ 15V | ±25V | - | 1.6W (Ta) | 8 mOhm @ 14.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
||
IXYS |
MOSFET N-CH 800V 2A TO-220
|
封装: TO-220-3 |
库存4,320 |
|
MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 5.5V @ 250µA | 22nC @ 10V | 440pF @ 25V | ±20V | - | 54W (Tc) | 6.2 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
IXYS |
MOSFET N-CH 1000V 1A TO-220
|
封装: TO-220-3 |
库存3,408 |
|
MOSFET (Metal Oxide) | 1000V | 1A (Tc) | 10V | 4.5V @ 50µA | 15.5nC @ 10V | 331pF @ 25V | ±20V | - | 50W (Tc) | 15 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET NCH 60V 25A TO252
|
封装: 8-PowerTDFN |
库存7,344 |
|
MOSFET (Metal Oxide) | 60V | 5.7A (Ta), 24A (Tc) | 4.5V, 10V | 3V @ 250µA | 8.8nC @ 10V | 584pF @ 25V | ±20V | - | 1.2W (Ta) | 50 mOhm @ 5.1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
ON Semiconductor |
MOSFET N-CH 35V 6A CPH6
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存5,488 |
|
MOSFET (Metal Oxide) | 35V | 6A (Ta) | 4V, 10V | 2.6V @ 1mA | 10nC @ 10V | 470pF @ 20V | ±20V | - | 1.6W (Ta) | 37 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
||
Texas Instruments |
MOSFET N-CH 80V 94A TO220-3
|
封装: TO-220-3 |
库存3,872 |
|
MOSFET (Metal Oxide) | 80V | 100A (Ta) | 6V, 10V | 3.4V @ 250µA | 36nC @ 10V | 2730pF @ 40V | ±20V | - | 188W (Tc) | 9.2 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 60V 2.9A 6-TSOP
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存1,086,456 |
|
MOSFET (Metal Oxide) | 60V | 2.9A (Tc) | 4.5V, 10V | 3V @ 250µA | 12nC @ 10V | 350pF @ 30V | ±20V | - | 2W (Ta), 3.3W (Tc) | 216 mOhm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
ON Semiconductor |
MOSFET N-CH 20V 2A SCH6
|
封装: SOT-563, SOT-666 |
库存36,384 |
|
MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 4.5V | 1.3V @ 1mA | 1.8nC @ 4.5V | 128pF @ 10V | ±12V | - | 800mW (Ta) | 125 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
||
STMicroelectronics |
MOSFET N-CH 600V 10A TO-220FP
|
封装: TO-220-3 Full Pack |
库存48,756 |
|
MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 5V @ 250µA | 30nC @ 10V | 850pF @ 50V | ±25V | - | 25W (Tc) | 450 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
NTE Electronics, Inc |
MOSFET N-CHANNEL 1KV 3.1A TO220
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1000 V | 3.1A (Tc) | 10V | 4V @ 250µA | 80 nC @ 10 V | 980 pF @ 25 V | ±20V | - | 125W (Tc) | 5Ohm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Sanyo |
N-CHANNEL SILICON MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT323 T&R
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 1.3A (Ta) | 1.8V, 4.5V | 950mV @ 250µA | 0.7 nC @ 4.5 V | 38 pF @ 10 V | ±8V | - | 450mW (Ta) | 200mOhm @ 300mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
Taiwan Semiconductor Corporation |
150V, 24A, SINGLE N-CHANNEL POWE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 4A (Ta), 24A (Tc) | 6V, 10V | 4V @ 250µA | 36 nC @ 10 V | 1829 pF @ 75 V | ±20V | - | 2.6W (Ta), 96W (Tc) | 65mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
||
MOSLEADER |
P-Channel -30V -1.1A SOT-23-3
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Microchip Technology |
MOSFET SIC 1200V 17 MOHM SOT-227
|
封装: - |
库存30 |
|
SiCFET (Silicon Carbide) | 1200 V | 88A (Tc) | 20V | 2.7V @ 4.5mA (Typ) | 249 nC @ 20 V | 5280 pF @ 1000 V | +23V, -10V | - | 278W (Tc) | 22mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | - | SOT-227 | - |
||
Renesas Electronics Corporation |
MOSFET N-CH 30V 40A 8WPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 40A (Ta) | - | - | 19 nC @ 4.5 V | 3220 pF @ 10 V | - | - | 35W (Tc) | 3.8mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-WFDFN Exposed Pad |
||
Torex Semiconductor Ltd |
MOSFET N-CH 30V 2A SOT23
|
封装: - |
库存300 |
|
MOSFET (Metal Oxide) | 30 V | 2A (Ta) | 2.5V, 4.5V | 1.1V @ 250µA | 4.1 nC @ 6 V | 230 pF @ 10 V | ±8V | - | 400mW (Ta) | 110mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
SICFET N-CH 1.2KV 19A TO247-3
|
封装: - |
库存531 |
|
SiCFET (Silicon Carbide) | 1200 V | 19A (Tc) | 15V, 18V | 5.7V @ 2.5mA | 13 nC @ 18 V | 454 pF @ 800 V | +23V, -7V | - | 94W (Tc) | 182mOhm @ 6A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
||
onsemi |
MOSFET P-CH 20V 8SOIC
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 13.5A (Ta) | 1.8V, 4.5V | 1.5V @ 250µA | 120 nC @ 4.5 V | 8237 pF @ 10 V | ±8V | - | 1.2W (Ta) | 8.5mOhm @ 13.5A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
SILICON CARBIDE (SIC) MOSFET-ELI
|
封装: - |
库存1,206 |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 34A (Tc) | 18V | 4.4V @ 7mA | 57 nC @ 18 V | 1230 pF @ 800 V | +22V, -10V | - | 160W (Tc) | 87mOhm @ 15A, 18V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
IXYS |
MOSFET N-CH ISOPLUS220
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |