页 399 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET，MOSFET - 单

记录 42,029
页  399/1,401
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制造商
描述
封装
库存
数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
ATP602-TL-H
ON Semiconductor

MOSFET N-CH 600V 5A ATPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ATPAK
  • Package / Case: ATPAK (2 leads+tab)
封装: ATPAK (2 leads+tab)
库存7,856
MOSFET (Metal Oxide)
600V
5A (Ta)
10V
-
13.6nC @ 10V
350pF @ 30V
±30V
-
70W (Tc)
2.7 Ohm @ 2.5A, 10V
150°C (TJ)
Surface Mount
ATPAK
ATPAK (2 leads+tab)
NTD3817N-1G
ON Semiconductor

MOSFET N-CH 16V 7.6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 34.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 702pF @ 12V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 25.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存2,992
MOSFET (Metal Oxide)
16V
7.6A (Ta), 34.5A (Tc)
4.5V, 10V
2.5V @ 250µA
10.5nC @ 4.5V
702pF @ 12V
±16V
-
1.2W (Ta), 25.9W (Tc)
13.9 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot IRFZ10
Vishay Siliconix

MOSFET N-CH 60V 10A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存438,516
MOSFET (Metal Oxide)
60V
10A (Tc)
10V
4V @ 250µA
11nC @ 10V
300pF @ 25V
±20V
-
43W (Tc)
200 mOhm @ 6A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRF9620L
Vishay Siliconix

MOSFET P-CH 200V 3.5A TO-262

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存5,808
MOSFET (Metal Oxide)
200V
3.5A (Tc)
10V
4V @ 250µA
22nC @ 10V
350pF @ 25V
±20V
-
-
1.5 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
STH290N4F6-2
STMicroelectronics

MOSFET N-CH 60V H2PAK-2

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存7,600
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hot STP14NK60Z
STMicroelectronics

MOSFET N-CH 600V 13.5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存10,020
MOSFET (Metal Oxide)
600V
13.5A (Tc)
10V
4.5V @ 100µA
75nC @ 10V
2220pF @ 25V
±30V
-
160W (Tc)
500 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
DMPH6023SK3Q-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存7,184
MOSFET (Metal Oxide)
60V
35A (Tc)
4.5V, 10V
3V @ 250µA
53.1nC @ 10V
2569pF @ 30V
±20V
-
3.2W
33 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
DMT10H015LK3-13
Diodes Incorporated

MOSFET BVDSS: 61V 100V TO252 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,040
MOSFET (Metal Oxide)
100V
50A (Tc)
6V, 10V
3.5V @ 250µA
33.3nC @ 10V
1871pF @ 50V
±20V
-
2.9W (Ta)
15 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
NTTFS5C670NLTWG
ON Semiconductor

MOSFET N-CH 60V 16A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 53µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封装: 8-PowerWDFN
库存7,968
MOSFET (Metal Oxide)
60V
16A (Ta), 70A (Tc)
4.5V, 10V
2V @ 53µA
2.5nC @ 4.5V
1400pF @ 25V
±20V
-
3.2W (Ta), 63W (Tc)
6.5 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
FDD86581_F085
Fairchild/ON Semiconductor

MV7 60/20V 1000A N-CHANNEL POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48.4W (Tj)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,888
MOSFET (Metal Oxide)
60V
25A (Tc)
10V
4V @ 250µA
19nC @ 10V
-
±20V
-
48.4W (Tj)
15 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
hot AO4438
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 8.2A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 8.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存127,104
MOSFET (Metal Oxide)
60V
8.2A (Ta)
4.5V, 10V
3V @ 250µA
58nC @ 10V
2300pF @ 30V
±20V
-
3.1W (Ta)
22 mOhm @ 8.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
hot AOD450
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 200V 3.8A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.82nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.8A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存470,568
MOSFET (Metal Oxide)
200V
3.8A (Tc)
10V
6V @ 250µA
3.82nC @ 10V
215pF @ 25V
±30V
-
2.1W (Ta), 25W (Tc)
700 mOhm @ 3.8A, 15V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
SCH1345-TL-H
ON Semiconductor

MOSFET P-CH 20V 4.5A SOT563

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 49 mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-563/SCH6
  • Package / Case: SOT-563, SOT-666
封装: SOT-563, SOT-666
库存3,792
MOSFET (Metal Oxide)
20V
4.5A (Ta)
1.5V, 4.5V
1.3V @ 1mA
11nC @ 4.5V
1220pF @ 10V
±10V
-
1W (Ta)
49 mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount
SOT-563/SCH6
SOT-563, SOT-666
IXFH24N90P
IXYS

MOSFET N-CH TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 660W (Tc)
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
封装: TO-247-3
库存6,528
MOSFET (Metal Oxide)
900V
24A (Tc)
10V
6.5V @ 1mA
130nC @ 10V
7200pF @ 25V
±30V
-
660W (Tc)
420 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
NTMFS5H600NLT1G
ON Semiconductor

T8 60V MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6680pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
封装: 8-PowerTDFN, 5 Leads
库存2,224
MOSFET (Metal Oxide)
60V
35A (Ta), 250A (Tc)
4.5V, 10V
2V @ 250µA
11nC @ 4.5V
6680pF @ 30V
±20V
-
3.3W (Ta), 160W (Tc)
1.3 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
DN1509K1-G
Microchip Technology

MOSFET N-CH 90V 0.2A SOT23-5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 90V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 490mW (Ta)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 200mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-5
  • Package / Case: SC-74A, SOT-753
封装: SC-74A, SOT-753
库存7,152
MOSFET (Metal Oxide)
90V
200mA (Tj)
0V
-
-
150pF @ 25V
±20V
Depletion Mode
490mW (Ta)
6 Ohm @ 200mA, 0V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-5
SC-74A, SOT-753
hot IRFB4410PBF
Infineon Technologies

MOSFET N-CH 100V 96A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 58A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存8,712
MOSFET (Metal Oxide)
100V
88A (Tc)
10V
4V @ 150µA
180nC @ 10V
5150pF @ 50V
±20V
-
200W (Tc)
10 mOhm @ 58A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot FDP032N08
Fairchild/ON Semiconductor

MOSFET N-CH 75V 120A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15160pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存142,860
MOSFET (Metal Oxide)
75V
120A (Tc)
10V
4.5V @ 250µA
220nC @ 10V
15160pF @ 25V
±20V
-
375W (Tc)
3.2 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot RSD160P05TL
Rohm Semiconductor

MOSFET P-CH 45V 16A CPT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CPT3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存14,568
MOSFET (Metal Oxide)
45V
16A (Ta)
4V, 10V
3V @ 1mA
16nC @ 5V
2000pF @ 10V
±20V
-
20W (Tc)
50 mOhm @ 16A, 10V
150°C (TJ)
Surface Mount
CPT3
TO-252-3, DPak (2 Leads + Tab), SC-63
2N7000_D74Z
Fairchild/ON Semiconductor

MOSFET N-CH 60V 200MA TO-92

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存35,112
MOSFET (Metal Oxide)
60V
200mA (Ta)
4.5V, 10V
3V @ 1mA
-
50pF @ 25V
±20V
-
400mW (Ta)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
XP9561GI
YAGEO XSEMI

MOSFET P-CH 40V 36A TO220CFM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 33.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220CFM
  • Package / Case: TO-220-3 Full Pack
封装: -
库存2,886
MOSFET (Metal Oxide)
40 V
36A (Tc)
4.5V, 10V
3V @ 250µA
40 nC @ 4.5 V
2780 pF @ 25 V
±20V
-
33.7W (Tc)
16mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220CFM
TO-220-3 Full Pack
DMT10H025LSS-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V SO-8 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 12.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: -
Request a Quote
MOSFET (Metal Oxide)
100 V
7.1A (Ta)
4.5V, 10V
3V @ 250µA
22.9 nC @ 10 V
1639 pF @ 50 V
±20V
-
1.3W (Ta), 12.9W (Tc)
25mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
AO3403L
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 2.6A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: 3-SMD, SOT-23-3 Variant
封装: -
Request a Quote
MOSFET (Metal Oxide)
30 V
2.6A (Ta)
2.5V, 10V
1.4V @ 250µA
5.3 nC @ 4.5 V
500 pF @ 15 V
±12V
-
1.4W (Ta)
130mOhm @ 2.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
3-SMD, SOT-23-3 Variant
TK40S06N1L-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 40A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存2,928
MOSFET (Metal Oxide)
60 V
40A (Ta)
4.5V, 10V
2.5V @ 200µA
26 nC @ 10 V
1650 pF @ 10 V
±20V
-
88.2W (Tc)
18mOhm @ 20A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTM67N10
IXYS

MOSFET N-CH 100V 67A TO204AE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-204AE
  • Package / Case: TO-204AE
封装: -
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MOSFET (Metal Oxide)
100 V
67A (Tc)
10V
4V @ 4mA
260 nC @ 10 V
4500 pF @ 25 V
±20V
-
300W (Tc)
25mOhm @ 33.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-204AE
TO-204AE
TSM180N03CS
Taiwan Semiconductor Corporation

30V, 9A, SINGLE N-CHANNEL POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: -
Request a Quote
MOSFET (Metal Oxide)
30 V
9A (Tc)
4.5V, 10V
2V @ 250µA
4.1 nC @ 4.5 V
345 pF @ 25 V
±20V
-
2.5W (Tc)
18mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
IXFH98N60X3
IXYS

MOSFET ULTRA JCT 600V 98A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 49A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
98A (Tc)
10V
5V @ 4mA
90 nC @ 10 V
6250 pF @ 25 V
±20V
-
960W (Tc)
30mOhm @ 49A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
SSM3J168F-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 400MA S-MINI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
库存51,261
MOSFET (Metal Oxide)
60 V
400mA (Ta)
4V, 10V
2V @ 1mA
3 nC @ 10 V
82 pF @ 10 V
+20V, -16V
-
1.2W (Ta)
1.9Ohm @ 100mA, 4.5V
150°C
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
C3M0160120J
Wolfspeed, Inc.

SICFET N-CH 1200V 17A TO263-7

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 2.33mA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 1000 V
  • Vgs (Max): +15V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 208mOhm @ 8.5A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
封装: -
库存10,023
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
15V
3.6V @ 2.33mA
24 nC @ 15 V
632 pF @ 1000 V
+15V, -4V
-
90W (Tc)
208mOhm @ 8.5A, 15V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
FDBL9403-F085T6
onsemi

MOSFET N-CH 40V 50A/300A 8HPSOF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6985 pF @ 25 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 4.3W (Ta), 159.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HPSOF
  • Package / Case: 8-PowerSFN
封装: -
库存1,020
MOSFET (Metal Oxide)
40 V
50A (Ta), 300A (Tc)
-
4V @ 250µA
108 nC @ 10 V
6985 pF @ 25 V
+20V, -16V
-
4.3W (Ta), 159.6W (Tc)
0.95mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-HPSOF
8-PowerSFN