图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 80V 90A TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存6,928 |
|
MOSFET (Metal Oxide) | 80V | 90A (Tc) | 6V, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | ±20V | - | 150W (Tc) | 5.3 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 76A TO220FP
|
封装: TO-220-3 Full Pack |
库存110,280 |
|
MOSFET (Metal Oxide) | 30V | 76A (Tc) | 4.5V, 10V | 1V @ 250µA | 140nC @ 4.5V | 5000pF @ 25V | ±16V | - | 63W (Tc) | 6 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB
|
封装: TO-220-3 |
库存147,096 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 4780pF @ 25V | ±20V | - | 230W (Tc) | 4.9 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 20V 110A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存172,644 |
|
MOSFET (Metal Oxide) | 20V | 110A (Tc) | 4.5V, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | ±20V | - | 3.1W (Ta), 120W (Tc) | 6 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH PLUS247
|
封装: TO-247-3 |
库存3,936 |
|
MOSFET (Metal Oxide) | 800V | 20A (Tc) | 10V | 4.5V @ 4mA | 200nC @ 10V | 5100pF @ 25V | ±20V | - | 360W (Tc) | 420 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
ON Semiconductor |
MOSFET N-CH 25V 15.2A SO-8FL
|
封装: 8-PowerTDFN |
库存5,232 |
|
MOSFET (Metal Oxide) | 25V | 15.2A (Ta), 149A (Tc) | 3.2V, 10V | 2.5V @ 250µA | 85nC @ 11.5V | 4830pF @ 12V | ±16V | - | 900mW (Ta), 86.2W (Tc) | 2.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SO-8FL | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 500V 15A ISOPLUS220
|
封装: ISOPLUS220? |
库存2,384 |
|
MOSFET (Metal Oxide) | 500V | 15A (Tc) | 10V | 5.5V @ 4mA | 65nC @ 10V | 3600pF @ 25V | ±30V | - | 130W (Tc) | 260 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
||
Diodes Incorporated |
MOSFET N-CH 100V 170MA SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存6,720 |
|
MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 10V | 2V @ 1mA | - | 60pF @ 25V | ±20V | - | 300mW (Ta) | 6 Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Renesas Electronics America |
MOSFET N-CH 30V 25A HWSON
|
封装: 8-PowerWDFN |
库存6,976 |
|
MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4.5V, 10V | - | 10.4nC @ 4.5V | 1890pF @ 10V | ±20V | - | 15W (Tc) | 6.3 mOhm @ 12.5A, 10V | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 5A TO220F
|
封装: TO-220-3 Full Pack |
库存20,856 |
|
MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 4.5V @ 250µA | 19nC @ 10V | 620pF @ 25V | ±30V | - | 35W (Tc) | 1.5 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET N-CH 60V 6A CPH6
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存3,024 |
|
MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4V, 10V | 2.6V @ 1mA | 20nC @ 10V | 1040pF @ 20V | ±20V | - | 1.6W (Ta) | 43 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
||
Texas Instruments |
N-CHANNEL FEMTOFET MOSFET
|
封装: 3-XFDFN |
库存4,160 |
|
MOSFET (Metal Oxide) | 30V | 3A (Ta) | 1.8V, 8V | 1.1V @ 250µA | 1.2nC @ 4.5V | 195pF @ 15V | 12V | - | 500mW (Ta) | 121 mOhm @ 500mA, 8V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
封装: 8-PowerTDFN |
库存2,784 |
|
MOSFET (Metal Oxide) | 40V | 170A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 150nC @ 10V | 7942pF @ 20V | ±20V | - | 104W (Tc) | 2 mOhm @ 27A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
||
TSC America Inc. |
MOSFET, SINGLE, P-CHANNEL, -30V,
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存4,272 |
|
MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4.5V, 10V | 3V @ 250µA | 2.7nC @ 10V | 551.57pF @ 15V | ±20V | - | 1.25W (Ta) | 60 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
TSC America Inc. |
MOSFET, SINGLE, P-CHANNEL, -20V,
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存7,024 |
|
MOSFET (Metal Oxide) | 20V | 2.8A (Tc) | 1.8V, 4.5V | 950mV @ 250µA | 4.5nC @ 4.5V | 415pF @ 6V | ±8V | - | 900mW (Ta) | 100 mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 200V 24A TO-220AB
|
封装: TO-220-3 |
库存6,300 |
|
MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 5.5V @ 250µA | 86nC @ 10V | 1960pF @ 25V | ±30V | - | 3.8W (Ta), 170W (Tc) | 100 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 800V 2A TO-220
|
封装: TO-220-3 Full Pack |
库存76,884 |
|
MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 3.9V @ 120µA | 16nC @ 10V | 290pF @ 100V | ±20V | - | 30.5W (Tc) | 2.7 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 30V 50A TO-220-3
|
封装: TO-220-3 |
库存22,992 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 31nC @ 10V | 3200pF @ 15V | ±20V | - | 68W (Tc) | 5.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V
|
封装: 8-PowerWDFN |
库存6,336 |
|
MOSFET (Metal Oxide) | 30V | 14.8A (Ta) | 4.5V, 10V | 3V @ 1mA | 42nC @ 10V | 2520pF @ 15V | ±20V | - | 2.3W (Ta), 36W (Tc) | 6 mOhm @ 14.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 25A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,816 |
|
MOSFET (Metal Oxide) | 80V | 25A (Tc) | 10V | 4V @ 250µA | 21nC @ 10V | 866pF @ 40V | ±20V | - | 48.4W (Tj) | 21 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
MOSFET P-CH 12V 2A WEMT6
|
封装: SOT-563, SOT-666 |
库存3,104 |
|
MOSFET (Metal Oxide) | 12V | 2A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 6.5nC @ 4.5V | 770pF @ 6V | ±10V | - | 700mW (Ta) | 105 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
||
Infineon Technologies |
MOSFET N-CH 100V 59A TO-220AB
|
封装: TO-220-3 |
库存16,296 |
|
MOSFET (Metal Oxide) | 100V | 59A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | ±20V | - | 160W (Tc) | 18 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
IXYS |
MOSFET N-CH 100V 180A TO-264AA
|
封装: TO-264-3, TO-264AA |
库存6,060 |
|
MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 4V @ 8mA | 390nC @ 10V | 10900pF @ 25V | ±20V | - | 560W (Tc) | 8 mOhm @ 90A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 500MA VESM
|
封装: SOT-723 |
库存568,950 |
|
MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.5V, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ±10V | - | 150mW (Ta) | 630 mOhm @ 200mA, 5V | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
||
STMicroelectronics |
MOSFET N-CH 1500V 4A TO-220
|
封装: TO-220-3 |
库存19,308 |
|
MOSFET (Metal Oxide) | 1500V | 4A (Tc) | 10V | 5V @ 250µA | 50nC @ 10V | 1300pF @ 25V | ±30V | - | 160W (Tc) | 7 Ohm @ 2A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 60A DPAK
|
封装: - |
库存2,115 |
|
MOSFET (Metal Oxide) | 60 V | 60A (Ta) | 6V, 10V | 3V @ 1mA | 156 nC @ 10 V | 7760 pF @ 10 V | +10V, -20V | - | 100W (Tc) | 11.2mOhm @ 30A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
SMC Diode Solutions |
MOSFET SILICON CARBIDE SIC 1200V
|
封装: - |
库存780 |
|
SiCFET (Silicon Carbide) | 1200 V | 41A (Tc) | 20V | 4V @ 10mA | 54 nC @ 20 V | 1324 pF @ 1000 V | +25V, -10V | - | 231W (Tc) | 100mOhm @ 20A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
Vishay Siliconix |
N-CHANNEL 80 V (D-S) 175C MOSFET
|
封装: - |
库存12,075 |
|
MOSFET (Metal Oxide) | 80 V | 30A (Ta), 302A (Tc) | 7.5V, 10V | 4V @ 250µA | 155 nC @ 10 V | 7730 pF @ 40 V | ±20V | - | 3.3W (Ta), 333W (Tc) | 1.35mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | PowerPAK® 8 x 8 |
||
Panjit International Inc. |
DFN2020B-6L, MOSFET
|
封装: - |
库存8,826 |
|
MOSFET (Metal Oxide) | 30 V | 6.5A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 7.8 nC @ 4.5 V | 870 pF @ 15 V | ±20V | - | 2W (Ta) | 30mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN2020B-6 | 6-WDFN Exposed Pad |
||
Micro Commercial Co |
MOSFET N-CH 100V 70A D2PAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 10V | 4V @ 250µA | 80 nC @ 10 V | 2960 pF @ 50 V | ±25V | - | 115W | 18mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |