图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 600V 11A TO-220
|
封装: TO-220-3 |
库存7,440 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 500µA | 64nC @ 10V | 1200pF @ 25V | ±20V | - | 125W (Tc) | 440 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 70A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,672 |
|
MOSFET (Metal Oxide) | 40V | 70A (Tc) | 10V | 4V @ 33µA | 42nC @ 10V | 3300pF @ 20V | ±20V | - | 79W (Tc) | 5.2 mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 56A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,264 |
|
MOSFET (Metal Oxide) | 30V | 56A (Tc) | 4.5V, 10V | 2.25V @ 25µA | 14nC @ 4.5V | 1150pF @ 15V | ±20V | - | 50W (Tc) | 9.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 55V 30A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,136 |
|
MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 4V @ 250µA | 27nC @ 10V | 740pF @ 25V | ±20V | - | 48W (Tc) | 24.5 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 24V 30A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,400 |
|
MOSFET (Metal Oxide) | 24V | 30A (Ta) | 4.5V, 10V | 3V @ 250µA | 20nC @ 4.5V | 1000pF @ 20V | ±20V | - | 75W (Tj) | 14.5 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 10A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存133,752 |
|
MOSFET (Metal Oxide) | 100V | 10A (Tc) | 5V, 10V | 2V @ 250µA | 12nC @ 5V | 520pF @ 25V | ±20V | - | 2.5W (Ta), 40W (Tc) | 180 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 40V 42A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,080 |
|
MOSFET (Metal Oxide) | 40V | 42A (Tc) | 10V | 4V @ 250µA | 89nC @ 10V | 2950pF @ 25V | ±20V | - | 140W (Tc) | 5.5 mOhm @ 42A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Microchip Technology |
MOSFET P-CH 500V 0.054A TO92-3
|
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
库存3,216 |
|
MOSFET (Metal Oxide) | 500V | 54mA (Tj) | 5V, 10V | 4.5V @ 1mA | - | 70pF @ 25V | ±20V | - | 1W (Tc) | 125 Ohm @ 10mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
||
Vishay Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存5,376 |
|
MOSFET (Metal Oxide) | 60V | 60A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 66nC @ 10V | 3105pF @ 30V | ±20V | - | 5.4W (Ta), 83W (Tc) | 3.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
STMicroelectronics |
MOSFET N-CH 600V 5.5A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存4,928 |
|
MOSFET (Metal Oxide) | 600V | 5.5A (Tc) | 10V | 4V @ 250µA | 10nC @ 10V | 320pF @ 100V | ±25V | - | 60W (Tc) | 780 mOhm @ 3A, 10V | 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
|
封装: TO-226-3, TO-92-3 (TO-226AA) |
库存6,160 |
|
MOSFET (Metal Oxide) | 600V | 500mA (Tc) | 10V | 4.5V @ 250µA | 6.1nC @ 10V | 138pF @ 25V | ±30V | - | 2.5W (Tc) | 10 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 47A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存38,580 |
|
MOSFET (Metal Oxide) | 60V | 47A (Tc) | 4.5V, 10V | 3V @ 250µA | 46nC @ 10V | 1480pF @ 25V | ±16V | - | 110W (Tc) | 22 mOhm @ 47A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A TO-220SIS
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存6,924 |
|
MOSFET (Metal Oxide) | 650V | 5.8A (Ta) | 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | ±30V | - | 30W (Tc) | 1 Ohm @ 2.9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Infineon Technologies |
MOSFET N-CH 650V 5A TO252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存6,832 |
|
MOSFET (Metal Oxide) | 650V | 5A (Tc) | 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | ±20V | - | 49W (Tc) | 1.5 Ohm @ 1.1A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
EPC |
MOSFET NCH 40V 60A DIE
|
封装: Die |
库存28,356 |
|
GaNFET (Gallium Nitride) | 40V | 60A (Ta) | 5V | 2.5V @ 19mA | - | 2100pF @ 20V | +6V, -4V | - | - | 1.5 mOhm @ 37A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Vishay Siliconix |
MOSFET N-CH 100V 31A TO-247AC
|
封装: TO-247-3 |
库存61,752 |
|
MOSFET (Metal Oxide) | 100V | 31A (Tc) | 10V | 4V @ 250µA | 72nC @ 10V | 1700pF @ 25V | ±20V | - | 180W (Tc) | 77 mOhm @ 19A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 1000V 8A TO-247
|
封装: TO-247-3 |
库存111,564 |
|
MOSFET (Metal Oxide) | 1000V | 8A (Tc) | 10V | 5V @ 250µA | 70nC @ 10V | 3220pF @ 25V | ±30V | - | 225W (Tc) | 1.45 Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 80V 78A 8-DFN
|
封装: 8-PowerSMD, Flat Leads |
库存24,102 |
|
MOSFET (Metal Oxide) | 80V | 24A (Ta), 78A (Tc) | 6V, 10V | 3.3V @ 250µA | 40nC @ 10V | 2162pF @ 40V | ±20V | - | 7.4W (Ta), 78W (Tc) | 7.1 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Diodes Incorporated |
MOSFET N-CH 60V 150MA SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存1,033,908 |
|
MOSFET (Metal Oxide) | 60V | 150mA (Ta) | 5V, 10V | 2.5V @ 1mA | - | 60pF @ 25V | ±30V | - | 330mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
onsemi |
T8 60V LOW COSS
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 35A (Ta), 250A (Tc) | 4.5V, 10V | 2V @ 250µA | 89 nC @ 10 V | 6680 pF @ 30 V | ±20V | - | 3.3W (Ta), 160W (Tc) | 1.3mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Goford Semiconductor |
MOSFET P-CH 60V 40A TO-220
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | - | 40A (Tc) | 10V | 3V @ 250µA | - | - | ±20V | - | 50W (Tc) | 30mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 500V 22A TO247AC
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 4V @ 250µA | 120 nC @ 10 V | 3450 pF @ 25 V | ±30V | - | 277W (Tc) | 230mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Infineon Technologies |
1200V COOLSIC MOSFET PG-TO247-3
|
封装: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 5.7V @ 5.6mA | 31 nC @ 18 V | 1060 pF @ 800 V | +23V, -7V | - | 150W (Tc) | 78mOhm @ 13A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
||
Diotec Semiconductor |
MOSFET DPAK N 700V 1.6OHM 150C
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 700 V | 2.7A (Tc) | 10V | 3.5V @ 250µA | 5.8 nC @ 10 V | 209 pF @ 350 V | ±20V | - | 34.4W (Tc) | 1.6Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
PXP6R7-30QL/SOT8002/MLPAK33
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 12.6A (Ta), 66.6A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 133 nC @ 10 V | 4400 pF @ 15 V | ±20V | - | 1.8W (Ta), 50W (Tc) | 6.7mOhm @ 12.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | MLPAK33 | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI506
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 15A (Ta), 85A (Tc) | 4.5V, 10V | 3V @ 250µA | 29.1 nC @ 10 V | 1895 pF @ 30 V | ±20V | - | 2.7W (Ta), 83.3W (Tc) | 6.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
onsemi |
MOSFET N-CH 20V 12.1A 6PQFN
|
封装: - |
库存15,522 |
|
MOSFET (Metal Oxide) | 20 V | 12.1A (Ta) | 1.8V, 4.5V | 1.2V @ 250µA | 21 nC @ 4.5 V | 2165 pF @ 10 V | ±12V | - | 860mW (Ta) | 3.8mOhm @ 10A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerWDFN |
||
Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -3A, -60V,
|
封装: - |
库存11,412 |
|
MOSFET (Metal Oxide) | 60 V | 3A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 15 nC @ 10 V | 1178 pF @ 30 V | ±20V | - | 1.56W (Ta) | 95mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 39A 4VSON
|
封装: - |
库存1,104 |
|
MOSFET (Metal Oxide) | 600 V | 39A (Tc) | 10V | 4V @ 590µA | 51 nC @ 10 V | 2180 pF @ 400 V | ±20V | - | 154W (Tc) | 85mOhm @ 11.8A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT523 T&R
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 360mA (Ta) | 4.5V, 10V | 2.6V @ 250µA | 0.36 nC @ 4.5 V | 19 pF @ 15 V | ±20V | - | 260mW (Ta) | 900mOhm @ 420mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |