图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存17,700 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 150µA | 150nC @ 10V | 4340pF @ 25V | ±20V | - | 200W (Tc) | 3.7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 44A TDSON-8
|
封装: 8-PowerTDFN |
库存3,376 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta), 44A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 17nC @ 10V | 1500pF @ 15V | ±20V | - | 2.5W (Ta), 30W (Tc) | 10 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 55V 100A TO-220
|
封装: TO-220-3 |
库存10,140 |
|
MOSFET (Metal Oxide) | 55V | 100A (Tc) | 4.5V, 10V | 4V @ 250µA | 170nC @ 10V | 6800pF @ 25V | ±20V | - | 300W (Tc) | 5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 7.3A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,120 |
|
MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 5.5V @ 350µA | 35nC @ 10V | 970pF @ 25V | ±20V | - | 83W (Tc) | 600 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH
|
封装: TO-220-3 Full Pack |
库存5,488 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
||
Global Power Technologies Group |
MOSFET N-CH 400V 3.4A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存2,272 |
|
MOSFET (Metal Oxide) | 400V | 3.4A (Tc) | 10V | 4V @ 250µA | 7.1nC @ 10V | 522pF @ 25V | ±30V | - | 50W (Tc) | 1.6 Ohm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Nexperia USA Inc. |
MOSFET N-CH 80V 120A TO220AB
|
封装: TO-220-3 |
库存6,320 |
|
MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4V @ 1mA | 169nC @ 10V | 12030pF @ 25V | ±20V | - | 349W (Tc) | 4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 2.7A 3SSOT
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存37,896 |
|
MOSFET (Metal Oxide) | 30V | 2.7A (Ta) | 4.5V, 10V | 3V @ 250µA | 7nC @ 5V | 650pF @ 15V | ±20V | - | 500mW (Ta) | 46 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET P-CH 30V 1.49A SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存463,392 |
|
MOSFET (Metal Oxide) | 30V | 1.49A (Ta) | 4.5V, 10V | 3V @ 250µA | 10nC @ 10V | 180pF @ 15V | ±20V | - | 700mW (Ta) | 200 mOhm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Microsemi Corporation |
MOSFET N-CH 1000V 40A SP1
|
封装: SP1 |
库存7,056 |
|
MOSFET (Metal Oxide) | 1000V | 40A | 10V | 5V @ 2.5mA | 570nC @ 10V | 14800pF @ 25V | ±30V | - | 657W (Tc) | 216 mOhm @ 33A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
||
Vishay Siliconix |
MOSFET N-CH 200V 4A TO220FP
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存10,272 |
|
MOSFET (Metal Oxide) | 200V | 4A (Tc) | 4V, 5V | 2V @ 250µA | 16nC @ 10V | 360pF @ 25V | ±10V | - | 30W (Tc) | 800 mOhm @ 2.4A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
STMicroelectronics |
MOSFET N-CH 75V 70A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,384 |
|
MOSFET (Metal Oxide) | 75V | 78A (Tc) | 10V | 4V @ 250µA | 76nC @ 10V | 5015pF @ 25V | ±20V | - | 125W (Tc) | 11 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
TRANSISTOR N-CH
|
封装: - |
库存6,352 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Microsemi Corporation |
MOSFET N-CH 1000V 145A SP6
|
封装: SP6 |
库存6,944 |
|
MOSFET (Metal Oxide) | 1000V | 145A | 10V | 5V @ 20mA | 1068nC @ 10V | 28500pF @ 25V | ±30V | - | 3250W (Tc) | 78 mOhm @ 72.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
||
Microchip Technology |
MOSFET P-CH 220V 0.12A SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存4,400 |
|
MOSFET (Metal Oxide) | 220V | 120mA (Tj) | 4.5V, 10V | 2.4V @ 1mA | - | 110pF @ 25V | ±20V | - | 360mW (Ta) | 12 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
ON Semiconductor |
MOSFET N-CH 20V 5.5A MCPH6
|
封装: 6-SMD, Flat Leads |
库存4,512 |
|
MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.8V, 4.5V | 1.3V @ 1mA | 5.1nC @ 4.5V | 410pF @ 10V | ±12V | - | 1.5W (Ta) | 38 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | SC-88FL/ MCPH6 | 6-SMD, Flat Leads |
||
Vishay Siliconix |
MOSFET N-CH 100V 50A D2PK TO263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,848 |
|
MOSFET (Metal Oxide) | 100V | 50A (Tc) | 7.5V, 10V | 4V @ 250µA | 50nC @ 10V | 1950pF @ 50V | ±20V | - | 125W (Tc) | 8.9 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 80V 180A H2PAK-2
|
封装: TO-263-3, D2Pak (2 Leads + Tab) Variant |
库存5,616 |
|
MOSFET (Metal Oxide) | 80V | 180A (Tc) | 10V | 4V @ 250µA | 193nC @ 10V | 13600pF @ 50V | ±20V | - | 315W (Tc) | 2.1 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK | TO-263-3, D2Pak (2 Leads + Tab) Variant |
||
Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存115,416 |
|
MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | ±10V | - | 2.5W (Ta), 42W (Tc) | 100 mOhm @ 8.4A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET P-CH 100V 52A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存17,112 |
|
MOSFET (Metal Oxide) | 100V | 52A (Tc) | 10V | 4.5V @ 250µA | 60nC @ 10V | 2845pF @ 25V | ±20V | - | 300W (Tc) | 50 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 1.2A SOT-23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存504,420 |
|
MOSFET (Metal Oxide) | 30V | 1.2A (Ta) | 4.5V, 10V | 1V @ 250µA | 5nC @ 10V | 85pF @ 25V | ±20V | - | 540mW (Ta) | 250 mOhm @ 910mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET P-CH 30V 12A SC70-6
|
封装: PowerPAK? SC-70-6 |
库存49,692 |
|
MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 3V @ 250µA | 29nC @ 10V | 950pF @ 15V | ±20V | - | 3.5W (Ta), 19W (Tc) | 35 mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
||
Infineon Technologies |
MOSFET N-CH 30V 21A PQFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 21A (Ta), 40A (Tc) | - | 2.35V @ 50µA | 31 nC @ 10 V | 2155 pF @ 25 V | - | - | - | 3.8mOhm @ 20A, 10V | - | Surface Mount | PQFN (3x3) | 8-VQFN Exposed Pad |
||
Goford Semiconductor |
N20V, 28A, RD<7.3M@4.5V,VTH0.5V~
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 28A (Tc) | 2.5V, 4.5V | 900mV @ 250µA | 42 nC @ 10 V | 2000 pF @ 10 V | ±12V | - | 2.5W (Tc) | 7.3mOhm @ 12A, 4.5V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Nexperia USA Inc. |
NXV100XP/SOT23/TO-236AB
|
封装: - |
库存60,789 |
|
MOSFET (Metal Oxide) | 30 V | 1.5A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 6.4 nC @ 4.5 V | 354 pF @ 15 V | ±12V | - | 340mW (Ta), 2.1W (Tc) | 140mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET N-CH 30V 60A POWERDI3333
|
封装: - |
库存3,630 |
|
MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 3V @ 250µA | 42 nC @ 10 V | 2000 pF @ 15 V | ±20V | - | 2W (Ta) | 5.5mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
||
onsemi |
MOSFET N-CH 30V 20A DPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 20A (Ta) | - | 2V @ 250µA | 18.9 nC @ 10 V | 1260 pF @ 25 V | - | - | - | 27mOhm @ 10A, 5V | - | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 3A VS-8
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 2V, 4.5V | 1.2V @ 200µA | 7.5 nC @ 5 V | 590 pF @ 10 V | ±12V | Schottky Diode (Isolated) | 330mW (Ta) | 49mOhm @ 1.5A, 4.5V | 150°C (TJ) | Surface Mount | VS-8 (2.9x1.5) | 8-SMD, Flat Lead |
||
Infineon Technologies |
TRENCH <= 40V
|
封装: - |
库存15,000 |
|
MOSFET (Metal Oxide) | 30 V | 66A (Ta), 700A (Tc) | 4.5V, 10V | 2V @ 1.46mA | 262 nC @ 10 V | 18000 pF @ 15 V | ±20V | - | 2.5W (Ta), 278W (Tc) | 0.35mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSON-8-U04 | 8-PowerTDFN |
||
Texas Instruments |
MOSFET N-CH 40V 110A/194A DDPAK
|
封装: - |
库存1,923 |
|
MOSFET (Metal Oxide) | 40 V | 110A (Ta), 194A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 64 nC @ 10 V | 5940 pF @ 20 V | ±20V | - | 188W (Ta) | 2.6mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (DDPAK-3) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |