图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 43A TO220AB
|
封装: TO-220-3 Full Pack |
库存24,204 |
|
MOSFET (Metal Oxide) | 100V | 43A (Tc) | 10V | 4V @ 150µA | 110nC @ 10V | 4910pF @ 50V | ±30V | - | 47W (Tc) | 9.3 mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 100V 80A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,992 |
|
MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 3830pF @ 25V | ±20V | - | 260W (Tc) | 15 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 80A TO-220
|
封装: TO-220-3 |
库存4,816 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 100µA | 59nC @ 5V | 7624pF @ 15V | ±20V | - | 150W (Tc) | 3.1 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 80V 9.3A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存12,384 |
|
MOSFET (Metal Oxide) | 80V | 9.3A (Tc) | 10V | 4V @ 250µA | 53nC @ 10V | 1510pF @ 25V | ±20V | - | 2.5W (Tc) | 15 mOhm @ 5.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 1000V 4A TO-220AB
|
封装: TO-220-3 |
库存4,768 |
|
MOSFET (Metal Oxide) | 1000V | 4A (Ta) | 10V | 3.5V @ 1mA | 60nC @ 10V | 700pF @ 25V | ±20V | - | 100W (Tc) | 3.8 Ohm @ 2A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
NXP |
MOSFET N-CH 25V 75A I-PAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存4,864 |
|
MOSFET (Metal Oxide) | 25V | 75A (Tc) | 10V | 3.2V @ 1mA | 17.1nC @ 10V | 860pF @ 12V | ±20V | - | 107W (Tc) | 9.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Semiconductor Diodes Division |
MOSFET N-CH 100V 180A SOT-227
|
封装: SOT-227-4, miniBLOC |
库存3,040 |
|
MOSFET (Metal Oxide) | 100V | 180A | 10V | 4V @ 250µA | 380nC @ 10V | 10700pF @ 25V | ±20V | - | 480W (Tc) | 6.5 mOhm @ 108A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
STMicroelectronics |
MOSFET N-CH 250V 16A TO-220FP
|
封装: TO-220-3 Full Pack |
库存7,408 |
|
MOSFET (Metal Oxide) | 250V | 16A (Tc) | 10V | 4V @ 250µA | 83nC @ 10V | 1270pF @ 25V | ±20V | - | 40W (Tc) | 280 mOhm @ 8A, 10V | -65°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 650V 9A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,296 |
|
MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 3.5V @ 340µA | 22nC @ 10V | 790pF @ 100V | ±20V | - | 83W (Tc) | 385 mOhm @ 5.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Microsemi Corporation |
MOSFET N-CH 200V 67A TO-247
|
封装: TO-247-3 |
库存4,224 |
|
MOSFET (Metal Oxide) | 200V | 67A (Tc) | 10V | 4V @ 1mA | 225nC @ 10V | 6120pF @ 25V | ±30V | - | 370W (Tc) | 38 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
ON Semiconductor |
MOSFET N-CH 30V 8SOFL
|
封装: 8-PowerTDFN, 5 Leads |
库存7,344 |
|
MOSFET (Metal Oxide) | 30V | 7.9A (Ta), 38A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 8nC @ 4.5V | 913pF @ 15V | ±20V | - | 920mW (Ta), 20.8W (Tc) | 7.3 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
TSC America Inc. |
MOSFET, SINGLE, P-CHANNEL, -60V,
|
封装: TO-251-3 Stub Leads, IPak |
库存4,992 |
|
MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 16.4nC @ 10V | 870pF @ 30V | ±20V | - | 20W (Tc) | 68 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Stub Leads, IPak |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 40A TO-220
|
封装: TO-220-3 |
库存6,576 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 3V @ 250µA | 17nC @ 5V | 1160pF @ 15V | ±20V | - | 60W (Tc) | 18 mOhm @ 20A, 10V | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 20V 3.7A SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存1,909,224 |
|
MOSFET (Metal Oxide) | 20V | 3.7A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 19nC @ 4.5V | 1020pF @ 10V | ±8V | - | 750mW (Ta) | 39 mOhm @ 4.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 23A TO220
|
封装: TO-220-3 |
库存6,912 |
|
MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 5V @ 250µA | 62.5nC @ 10V | 2090pF @ 100V | ±25V | - | 190W (Tc) | 150 mOhm @ 11.5A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 100V 40A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存6,624 |
|
MOSFET (Metal Oxide) | 100V | 8.5A (Ta), 41A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 66nC @ 10V | 3468pF @ 25V | ±20V | - | 3.9W (Ta), 90W (Tc) | 20 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 100V 6.6A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存26,994 |
|
MOSFET (Metal Oxide) | 100V | 6.6A (Tc) | 10V | 4V @ 250µA | 15nC @ 10V | 470pF @ 25V | ±30V | - | 2.5W (Ta), 44W (Tc) | 530 mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 30V 30A TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存36,432 |
|
MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2.2V @ 10µA | 14nC @ 10V | 980pF @ 25V | ±16V | - | 31W (Tc) | 13.6 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 30V 11A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存751,644 |
|
MOSFET (Metal Oxide) | 30V | - | 4.5V, 10V | 800mV @ 250µA (Min) | 20nC @ 5V | - | ±25V | - | 2.5W (Ta) | 12 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET NCH 30V 10.5A DFN
|
封装: 8-SMD, Flat Lead |
库存22,548 |
|
MOSFET (Metal Oxide) | 30V | 10.5A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 25nC @ 10V | 690pF @ 15V | ±20V | - | 3.1W (Ta) | 17 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (2.9x2.3) | 8-SMD, Flat Lead |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 300V 14A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存66,636 |
|
MOSFET (Metal Oxide) | 300V | 14A (Tc) | 10V | 5V @ 250µA | 25nC @ 10V | 1060pF @ 25V | ±30V | - | 140W (Tc) | 290 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 39A TDSON-8
|
封装: 8-PowerTDFN |
库存136,380 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta), 39A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 15nC @ 10V | 1200pF @ 15V | ±20V | - | 2.5W (Ta), 28W (Tc) | 12 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 650V 12A TO263AA
|
封装: - |
库存864 |
|
MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 5V @ 250µA | 18.5 nC @ 10 V | 1134 pF @ 25 V | ±30V | - | 180W (Tc) | 310mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA (IXFA) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Rohm Semiconductor |
SICFET N-CH 1200V 17A TO247N
|
封装: - |
库存1,893 |
|
SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 18V | 5.6V @ 2.5mA | 42 nC @ 18 V | 398 pF @ 800 V | +22V, -4V | - | 103W | 208mOhm @ 5A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 60V 50A TO220AB
|
封装: - |
库存2,121 |
|
MOSFET (Metal Oxide) | 60 V | 50A (Tc) | - | 4V @ 250µA | 67 nC @ 10 V | 1900 pF @ 25 V | ±20V | - | 150W (Tc) | 28mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
IXYS |
MOSFET N-CH 500V 12A TO263
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 5.5V @ 1mA | 29 nC @ 10 V | 1830 pF @ 25 V | ±30V | - | 200W (Tc) | 500mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Microchip Technology |
MOSFET N-CH 600V 31A ISOTOP
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 31A (Tc) | - | 5V @ 2.5mA | 100 nC @ 10 V | 4500 pF @ 25 V | - | - | - | 170mOhm @ 15.5A, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
||
Nexperia USA Inc. |
MOSFET N-CH 40V 50A LFPAK33
|
封装: - |
库存11,364 |
|
MOSFET (Metal Oxide) | 40 V | 50A (Ta) | 10V | 3.6V @ 1mA | 24 nC @ 10 V | 1625 pF @ 25 V | +20V, -10V | - | 65W (Ta) | 6.7mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
||
Taiwan Semiconductor Corporation |
600V, 2A, SINGLE N-CHANNEL POWER
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 4.5V @ 250µA | 9.4 nC @ 10 V | 249 pF @ 25 V | ±30V | - | 44W (Tc) | 4.4Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
NCH 10V DRIVE SERIES
|
封装: - |
Request a Quote |
|
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