图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 1.5A SOT-223
|
封装: TO-261-4, TO-261AA |
库存320,100 |
|
MOSFET (Metal Oxide) | 55V | 1.5A (Ta) | 10V | 4V @ 250µA | 11nC @ 10V | 190pF @ 25V | ±20V | - | 1W (Ta) | 160 mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 30V 90A TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,376 |
|
MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 51nC @ 10V | 5300pF @ 15V | ±20V | - | - | 3.1 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存2,640 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 3V @ 250µA | 23nC @ 4.5V | 2100pF @ 15V | ±20V | - | 2.5W (Ta) | 12.5 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 19A TO-220F
|
封装: TO-220-3 Full Pack, Formed Leads |
库存2,816 |
|
MOSFET (Metal Oxide) | 200V | 19A (Tc) | 10V | 4V @ 250µA | 53nC @ 10V | 1080pF @ 25V | ±30V | - | 43W (Tc) | 170 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 (Y-Forming) | TO-220-3 Full Pack, Formed Leads |
||
IXYS |
MOSFET N-CH 100V 100A SOT-227B
|
封装: SOT-227-4, miniBLOC |
库存5,440 |
|
MOSFET (Metal Oxide) | 100V | 100A | 10V | 4V @ 4mA | 180nC @ 10V | 4500pF @ 25V | ±20V | - | 360W (Tc) | 15 mOhm @ 500mA, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
Vishay Siliconix |
MOSFET N-CH 30V 16A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存453,312 |
|
MOSFET (Metal Oxide) | 30V | 16A (Tc) | 4.5V, 10V | 2.6V @ 250µA | 45nC @ 10V | 1675pF @ 15V | ±20V | - | 3.1W (Ta), 5.4W (Tc) | 11.5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 16.7A TO-220F
|
封装: TO-220-3 Full Pack |
库存4,480 |
|
MOSFET (Metal Oxide) | 150V | 16.7A (Tc) | 10V | 4V @ 250µA | 52nC @ 10V | 1600pF @ 25V | ±25V | - | 60W (Tc) | 90 mOhm @ 8.35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 5.6A TO-220
|
封装: TO-220-3 |
库存62,412 |
|
MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 5V | 2V @ 250µA | 8nC @ 5V | 235pF @ 25V | ±20V | - | 37W (Tc) | 440 mOhm @ 2.8A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 40V 120A TO-220
|
封装: TO-220-3 |
库存397,308 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 5V, 10V | 4V @ 250µA | 90nC @ 4.5V | 6400pF @ 25V | ±16V | - | 300W (Tc) | 3.8 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 120A TO262-3-1
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,136 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 110µA | 134nC @ 10V | 10740pF @ 25V | ±20V | - | 158W (Tc) | 2.1 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Microsemi Corporation |
MOSFET N-CH 1200V 20A SOT227
|
封装: SOT-227-4, miniBLOC |
库存5,968 |
|
MOSFET (Metal Oxide) | 1200V | 20A | 10V | 5V @ 2.5mA | 300nC @ 10V | 7736pF @ 25V | ±30V | - | 543W (Tc) | 672 mOhm @ 14A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
||
Texas Instruments |
MOSFET N-CH 80V 200A DDPAK-3
|
封装: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
库存7,552 |
|
MOSFET (Metal Oxide) | 80V | 200A (Ta) | 6V, 10V | 3.2V @ 250µA | 156nC @ 10V | 12200pF @ 40V | ±20V | - | 375W (Tc) | 2.3 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 11A TO220F
|
封装: TO-220-3 Full Pack |
库存14,160 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 250µA | 42nC @ 10V | 2010pF @ 50V | ±30V | - | 50W (Tc) | 400 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
||
Sanken |
MOSFET N-CH 60V 78A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,144 |
|
MOSFET (Metal Oxide) | 60V | 78A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 53.6nC @ 10V | 3810pF @ 25V | ±20V | - | 116W (Tc) | 6.3 mOhm @ 39A, 10V | 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V SOT23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存3,744 |
|
MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 4.3nC @ 4.5V | 339pF @ 10V | ±8V | - | 940mW | 38 mOhm @ 3.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 151A 8PQFN
|
封装: 8-PowerTDFN |
库存7,712 |
|
MOSFET (Metal Oxide) | 100V | 151A (Tc) | 6V, 10V | 4V @ 370µA | 54nC @ 6V | 6215pF @ 50V | ±20V | - | 138W (Tc) | 3.2 mOhm @ 67A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6), Power56 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 25V 35A PPAK 1212-8
|
封装: PowerPAK? 1212-8 |
库存31,104 |
|
MOSFET (Metal Oxide) | 25V | 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 40nC @ 10V | 1600pF @ 12.5V | ±20V | - | 3.8W (Ta), 52W (Tc) | 5.1 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 120A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存38,244 |
|
MOSFET (Metal Oxide) | 30V | 120A (Tc) | 10V | 2.8V @ 1mA | 229nC @ 10V | 14964pF @ 25V | ±16V | - | 306W (Tc) | 2.2 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Texas Instruments |
MOSFET N-CH 12V 2.1A 3PICOSTAR
|
封装: 3-XFDFN |
库存150,450 |
|
MOSFET (Metal Oxide) | 12V | 2.1A (Ta) | 1.8V, 4.5V | 1.1V @ 250µA | 1.4nC @ 4.5V | 200pF @ 6V | 8V | - | 500mW (Ta) | 180 mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
||
Vishay Siliconix |
MOSFET N-CH 60V 110A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,592 |
|
MOSFET (Metal Oxide) | 60V | 110A (Tc) | 10V | 4.5V @ 250µA | 300nC @ 10V | 15800pF @ 25V | ±20V | - | 3.75W (Ta), 375W (Tc) | 3.9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
onsemi |
FET 100V 4.85 MOHM PQFN56
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 100 V | 16A (Ta), 60A (Tc) | 6V, 10V | 4V @ 250µA | 66 nC @ 10 V | 4665 pF @ 50 V | ±20V | - | 2.7W (Ta), 113W (Tc) | 4.85mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
||
Micro Commercial Co |
MOSFET N-CH 20V 750MA SOT723
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 750mA (Tj) | 1.8V, 4.5V | 1.1V @ 250µA | 0.8 nC @ 4.5 V | 33 pF @ 16 V | ±12V | - | 150W (Tj) | 300mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-723 | SOT-723 |
||
MOSLEADER |
P-Channel -20V -2.4A SOT-23-3
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Rohm Semiconductor |
NCH 100V 70A, TO-220AB, POWER M
|
封装: - |
库存3,000 |
|
MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 6V, 10V | 4V @ 1mA | 73 nC @ 10 V | 4650 pF @ 50 V | ±20V | - | 135W (Tc) | 5.2mOhm @ 70A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Toshiba Semiconductor and Storage |
G3 650V SIC-MOSFET TO-247-4L 48
|
封装: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 650 V | 40A (Tc) | 18V | 5V @ 1.6mA | 41 nC @ 18 V | 1362 pF @ 400 V | +25V, -10V | - | 132W (Tc) | 69mOhm @ 20A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |
||
Renesas |
2SK1958-T1-A - N-CHANNEL MOS FET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 16 V | 100mA (Ta) | 1.5V, 4V | 1.1V @ 10µA | - | 10 pF @ 3 V | ±7V | - | 150mW (Ta) | 12Ohm @ 10mA, 4V | 150°C | Surface Mount | 8-MMPAK | 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) |
||
Infineon Technologies |
SICFET N-CH 1.2KV 26A TO247-4
|
封装: - |
库存1,776 |
|
SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 15V, 18V | 5.7V @ 3.7mA | 21 nC @ 18 V | 707 pF @ 800 V | +23V, -7V | - | 115W (Tc) | 117mOhm @ 8.5A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 4V @ 1.037mA | 170 nC @ 10 V | 6860 pF @ 50 V | ±20V | - | 250W (Tc) | 6mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Transphorm |
650 V 46.5 GAN FET
|
封装: - |
库存843 |
|
GaNFET (Gallium Nitride) | 650 V | 47.2A (Tc) | 10V | 4.8V @ 1mA | 22 nC @ 10 V | 1500 pF @ 400 V | ±20V | - | 187W (Tc) | 41mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Goford Semiconductor |
N100V, 7A,RD<140M@10V,VTH1.5V~2.
|
封装: - |
库存13,236 |
|
MOSFET (Metal Oxide) | 100 V | 7A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 4.3 nC @ 10 V | 206 pF @ 50 V | ±20V | - | 17W (Tc) | 140mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |