图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 200V 14.5A TO220-3
|
封装: TO-220-3 |
库存4,832 |
|
MOSFET (Metal Oxide) | 200V | 14.5A (Tc) | 5V | 4V @ 1mA | - | 1120pF @ 25V | ±20V | - | 95W (Tc) | 200 mOhm @ 9A, 5V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Global Power Technologies Group |
MOSFET N-CH 650V 1.8A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,456 |
|
MOSFET (Metal Oxide) | 650V | 1.8A (Tc) | 10V | 5V @ 250µA | 8.5nC @ 10V | 353pF @ 25V | ±30V | - | 52W (Tc) | 4.6 Ohm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 75V 10A TO252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存118,452 |
|
MOSFET (Metal Oxide) | 75V | 10A (Tc) | 4.5V, 20V | 3V @ 250µA | 6.5nC @ 10V | 350pF @ 30V | ±25V | - | 2.1W (Ta), 20W (Tc) | 130 mOhm @ 5A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 24A SOP-8 ADV
|
封装: 8-PowerVDFN |
库存3,120 |
|
MOSFET (Metal Oxide) | 30V | 24A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 21nC @ 10V | 2150pF @ 10V | ±20V | - | 1.6W (Ta), 30W (Tc) | 11 mOhm @ 12A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
IXYS |
MOSFET N-CH 75V 200A TO-220
|
封装: TO-220-3 |
库存3,232 |
|
MOSFET (Metal Oxide) | 75V | 200A (Tc) | 10V | 4V @ 250µA | 160nC @ 10V | 6800pF @ 25V | ±20V | - | 430W (Tc) | 5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 7.7A I-PAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存7,248 |
|
MOSFET (Metal Oxide) | 80V | 7.7A (Ta) | 6V, 10V | 4V @ 250µA | 79nC @ 10V | 1760pF @ 40V | ±20V | - | 3.8W (Ta), 42W (Tc) | 29 mOhm @ 7.7A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 600V 23A TO-220AB
|
封装: TO-220-3 |
库存3,248 |
|
MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 4V @ 250µA | 95nC @ 10V | 2418pF @ 100V | ±30V | - | 227W (Tc) | 158 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N CH 80V 10.7A 8-MLP
|
封装: 8-PowerWDFN |
库存3,360 |
|
MOSFET (Metal Oxide) | 80V | 10.7A (Ta), 22A (Tc) | 8V, 10V | 4.5V @ 250µA | 41nC @ 10V | 2640pF @ 40V | ±20V | - | 2.3W (Ta), 40W (Tc) | 11.7 mOhm @ 10.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3), Power33 | 8-PowerWDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 8V 24V POWERDI3333
|
封装: 8-PowerVDFN |
库存4,720 |
|
MOSFET (Metal Oxide) | 20V | 89A (Tc) | 1.8V, 4.5V | 900mV @ 250µA | 125nC @ 10V | 4670pF @ 10V | ±10V | - | 2.2W (Ta) | 4 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
||
STMicroelectronics |
MOSFET N-CH 1.2KV TO247-3
|
封装: TO-247-3 |
库存5,168 |
|
SiCFET (Silicon Carbide) | 1200V | 12A (Tc) | 20V | 3.5V @ 250µA | 22nC @ 20V | 290pF @ 400V | +25V, -10V | - | 150W (Tc) | 690 mOhm @ 6A, 20V | -55°C ~ 200°C (TJ) | Through Hole | HiP247? | TO-247-3 |
||
Infineon Technologies |
MOSFET N CH 40V 120A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,928 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 6V, 10V | 3.9V @ 100µA | 135nC @ 10V | 4730pF @ 25V | ±20V | - | 208W (Tc) | 2.5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存128,376 |
|
MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 5V @ 250µA | 8nC @ 10V | 280pF @ 25V | ±25V | - | 40W (Tc) | 2.5 Ohm @ 1.25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 100V 80A TO220-3
|
封装: TO-220-3 |
库存15,552 |
|
MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 3.5V @ 90µA | 68nC @ 10V | 4910pF @ 50V | ±20V | - | 150W (Tc) | 7.2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET P-CH 60V 620MA SC-59-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存45,456 |
|
MOSFET (Metal Oxide) | 60V | 620mA (Ta) | 4.5V, 10V | 2V @ 160µA | 6nC @ 10V | 176pF @ 25V | ±20V | - | 500mW (Ta) | 800 mOhm @ 620mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SC-59 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 4.5A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存36,000 |
|
MOSFET (Metal Oxide) | 100V | 4.5A (Ta) | 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | ±30V | - | 2.5W (Ta) | 60 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 60V 75A TO-220AB
|
封装: TO-220-3 |
库存35,046 |
|
MOSFET (Metal Oxide) | 60V | 75A (Tc) | 6V, 10V | 3.7V @ 100µA | 87nC @ 10V | 3000pF @ 25V | ±20V | - | 99W (Tc) | 7.3 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 30V 5.8A SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存22,572 |
|
MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 4.5V, 10V | 2.2V @ 250µA | - | 424pF @ 5V | ±20V | - | 700mW (Ta) | 38 mOhm @ 5.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
SICFET N-CH 1.2KV 26A TO247-3
|
封装: - |
库存1,302 |
|
SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 15V, 18V | 5.7V @ 3.7mA | 21 nC @ 18 V | 707 pF @ 800 V | +23V, -7V | - | 115W (Tc) | 117mOhm @ 8.5A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
||
MOSLEADER |
N-Channel 30V 0.14A SOT-23-3
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
POWER MOSFET, N-CHANNEL, SUPERFE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 36A (Tc) | 10V | 5V @ 860µA | 66 nC @ 10 V | 2930 pF @ 400 V | ±30V | - | 272W (Tc) | 90mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 4-PQFN (8x8) | 4-PowerTSFN |
||
Vishay Siliconix |
P-CHANNEL 100V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 5.6A (Tc) | 10V | 4V @ 250µA | 18 nC @ 10 V | 390 pF @ 25 V | ±20V | - | 2.5W (Ta), 42W (Tc) | 600mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
International Rectifier |
AUTOMOTIVE HEXFET N CHANNEL
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 75A (Tc) | 10V | 4V @ 1.037mA | 180 nC @ 10 V | 5150 pF @ 50 V | ±20V | - | 200W (Tc) | 10mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-904 | TO-220-3 |
||
onsemi |
MOSFET N-CH 80V 240A 8HPSOF
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 240A (Tc) | 10V | 4V @ 250µA | 169 nC @ 10 V | 10000 pF @ 40 V | ±20V | - | 357W (Tj) | 2mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
||
Diodes Incorporated |
MOSFET N-CH 20V 27A POWERDI3333
|
封装: - |
库存11,076 |
|
MOSFET (Metal Oxide) | 20 V | 24A (Ta), 27A (Tc) | 2.5V, 4.5V | 1.3V @ 250µA | 99 nC @ 10 V | 3926 pF @ 10 V | ±12V | - | 600mW (Ta) | 2mOhm @ 13.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
||
MOSLEADER |
N-ch MOS 30V 0.1A SOT-23
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2.5A UF6
|
封装: - |
库存17,994 |
|
MOSFET (Metal Oxide) | 20 V | 2.5A (Ta) | 2V, 4.5V | 1.2V @ 200µA | - | 800 pF @ 10 V | ±10V | - | 500mW (Ta) | 64mOhm @ 1.5A, 4.5V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
||
Microchip Technology |
MOSFET N-CH 1000V 14A TO247
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | - | 5V @ 1mA | 95 nC @ 10 V | 2525 pF @ 25 V | - | - | - | 780mOhm @ 7A, 10V | - | Through Hole | TO-247 [B] | TO-247-3 |
||
Panjit International Inc. |
30V P-CHANNEL ENHANCEMENT MODE M
|
封装: - |
库存6,288 |
|
MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 14 nC @ 4.5 V | 1556 pF @ 15 V | ±20V | - | 1.7W (Ta) | 15.5mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Diotec Semiconductor |
MOSFET SOT23 -40V -4.2A 0.08OHM
|
封装: - |
Request a Quote |
|
- | - | 4.2A | - | - | - | - | - | - | 750mW | - | - | Surface Mount | SOT-23 | - |
||
Micro Commercial Co |
N-CHANNEL MOSFET, DFN5060
|
封装: - |
库存11,826 |
|
MOSFET (Metal Oxide) | 60 V | 95A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 93 nC @ 10 V | 5950 pF @ 25 V | ±20V | - | 120W (Tj) | 2.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |