图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 10A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,800 |
|
MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | ±16V | - | 48W (Tc) | 185 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 150V 6.2A DIRECTFET
|
封装: DirectFET? Isometric MZ |
库存47,880 |
|
MOSFET (Metal Oxide) | 150V | 6.2A (Ta), 35A (Tc) | 10V | 4.9V @ 150µA | 55nC @ 10V | 2340pF @ 25V | ±20V | - | 2.8W (Ta), 89W (Tc) | 34.5 mOhm @ 7.6A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MZ | DirectFET? Isometric MZ |
||
Infineon Technologies |
MOSFET N-CH 25V 50A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,552 |
|
MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 2V @ 40µA | 22nC @ 5V | 2653pF @ 15V | ±20V | - | 83W (Tc) | 5.9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 20V 6.8A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存6,256 |
|
MOSFET (Metal Oxide) | 20V | 6.8A (Ta) | 2.7V, 4.5V | 700mV @ 250µA | 22nC @ 4.5V | 650pF @ 15V | ±12V | - | 2.5W (Ta) | 35 mOhm @ 4.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 40V 9.4A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存4,336 |
|
MOSFET (Metal Oxide) | 40V | 9.4A (Ta) | 4.5V, 10V | 2V @ 250µA | 34nC @ 4.5V | 2460pF @ 20V | ±12V | - | 2.5W (Ta) | 15.5 mOhm @ 9.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 30V 12A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存6,464 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 3V @ 250µA | 35nC @ 4.5V | - | ±20V | - | 1.9W (Ta) | 6.5 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 2.5A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,760 |
|
MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 4V @ 250µA | 13nC @ 10V | 365pF @ 25V | ±30V | - | 35W (Tc) | 2.5 Ohm @ 1.25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 300V 3.2A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,568 |
|
MOSFET (Metal Oxide) | 300V | 3.2A (Tc) | 10V | 5V @ 250µA | 7nC @ 10V | 230pF @ 25V | ±30V | - | 3.13W (Ta), 55W (Tc) | 2.2 Ohm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET P-CH 60V 15A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存185,088 |
|
MOSFET (Metal Oxide) | 60V | 15A (Tc) | 5V | 2V @ 250µA | 29nC @ 5V | 1190pF @ 25V | ±15V | - | 72W (Tc) | 175 mOhm @ 7.5A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 900V 1.7A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存12,588 |
|
MOSFET (Metal Oxide) | 900V | 1.7A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 490pF @ 25V | ±20V | - | 3.1W (Ta), 54W (Tc) | 8 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 20V 36A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存8,472 |
|
MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 2.55V @ 250µA | 7.2nC @ 4.5V | 550pF @ 10V | ±20V | - | 35W (Tc) | 16 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 30V 6.3A TSOP-6
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存6,288 |
|
MOSFET (Metal Oxide) | 30V | 6.3A (Ta) | 4.5V, 10V | 2V @ 30µA | 20.9nC @ 10V | 1401pF @ 15V | ±20V | - | 2W (Ta) | 33 mOhm @ 6.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP6-6 | SOT-23-6 Thin, TSOT-23-6 |
||
IXYS |
MOSFET N-CH 500V 60A TO-240AA
|
封装: TO-240AA |
库存3,056 |
|
MOSFET (Metal Oxide) | 500V | 60A | 10V | 4V @ 24mA | 405nC @ 10V | 12600pF @ 25V | ±20V | - | 590W (Tc) | 75 mOhm @ 500mA, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | TO-240AA | TO-240AA |
||
IXYS |
MOSFET N-CH 500V 30A TO-3P
|
封装: TO-3P-3, SC-65-3 |
库存2,384 |
|
MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 4.5V @ 250µA | 240nC @ 10V | 10200pF @ 25V | ±20V | - | 400W (Tc) | 200 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Vishay Siliconix |
MOSFET N-CH 600V 33A TO-247AD
|
封装: TO-3P-3 Full Pack |
库存5,536 |
|
MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 3508pF @ 100V | ±30V | - | 278W (Tc) | 99 mOhm @ 16.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-3P-3 Full Pack |
||
Nexperia USA Inc. |
PMZB600UNEL/SOT883/XQFN3
|
封装: - |
库存4,560 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.4A CST3
|
封装: SC-101, SOT-883 |
库存4,288 |
|
MOSFET (Metal Oxide) | 20V | 1.4A (Ta) | 1.2V, 4.5V | 1V @ 1mA | 1.6nC @ 4.5V | 100pF @ 10V | ±8V | - | 500mW (Ta) | 390 mOhm @ 800mA, 4.5V | 150°C | Surface Mount | CST3 | SC-101, SOT-883 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 3.8A TO-220
|
封装: TO-220-3 |
库存95,160 |
|
MOSFET (Metal Oxide) | 200V | 3.8A (Tc) | 5V, 10V | 2V @ 250µA | 5.2nC @ 5V | 310pF @ 25V | ±20V | - | 45W (Tc) | 1.35 Ohm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.18A VESM
|
封装: SOT-723 |
库存96,000 |
|
MOSFET (Metal Oxide) | 20V | 180mA (Ta) | 1.2V, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ±10V | - | 150mW (Ta) | 3 Ohm @ 50mA, 4V | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 650V 11A TO220F
|
封装: TO-220-3 Full Pack |
库存6,816 |
|
MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 4V @ 250µA | 13.2nC @ 10V | 646pF @ 100V | ±30V | - | 31W (Tc) | 399 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 75A TO-220AB
|
封装: TO-220-3 |
库存94,572 |
|
MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 4V @ 250µA | 238nC @ 20V | 3790pF @ 25V | ±20V | - | 310W (Tc) | 14 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
IXYS |
MOSFET N-CH 75V 80A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,680 |
|
MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 4.5V @ 250µA | 103nC @ 10V | 3600pF @ 25V | ±20V | - | 357W (Tc) | 24 mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH TO220-3
|
封装: TO-220-3 |
库存10,404 |
|
MOSFET (Metal Oxide) | 80V | 120A (Tc) | 6V, 10V | 3.8V @ 280µA | 223nC @ 10V | 16900pF @ 40V | ±20V | - | 375W (Tc) | 2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 500V 17A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,376 |
|
MOSFET (Metal Oxide) | 500V | 17A (Tc) | 10V | 4.5V @ 100µA | 119nC @ 10V | 2600pF @ 25V | ±30V | - | 190W (Tc) | 270 mOhm @ 8.5A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 30V 160A POWERFLAT56
|
封装: 8-PowerVDFN |
库存4,256 |
|
MOSFET (Metal Oxide) | 30V | 160A (Tc) | 4.5V, 10V | 2.3V @ 1mA | 20nC @ 4.5V | 3245pF @ 25V | ±20V | - | 84W (Tc) | 2.1 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
||
Vishay Siliconix |
MOSFET N-CH 1000V 6.1A TO-247AC
|
封装: TO-247-3 |
库存125,184 |
|
MOSFET (Metal Oxide) | 1000V | 6.1A (Tc) | 10V | 4V @ 250µA | 190nC @ 10V | 2800pF @ 25V | ±20V | - | 190W (Tc) | 2 Ohm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Taiwan Semiconductor Corporation |
600V, 4A, SINGLE N-CHANNEL POWER
|
封装: - |
库存15,000 |
|
MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 5V @ 1mA | 11 nC @ 10 V | 330 pF @ 300 V | ±20V | - | 57W (Tc) | 980mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
SMALL SIGNAL N-CHANNEL MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 150mA | 10V | 2.5V @ 1mA | - | 60 pF @ 25 V | ±20V | - | 400mW (Ta) | 7.5Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92 (TO-226) | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
||
Infineon Technologies |
HIGH POWER_NEW
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 136A (Tc) | 10V | 4.5V @ 3.08mA | 236 nC @ 10 V | 12338 pF @ 400 V | ±20V | - | 694W (Tc) | 17mOhm @ 61.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-22-1 | 22-PowerBSOP Module |
||
Vishay Siliconix |
MOSFET P-CHANNEL 30V 7.5A 6TSOP
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 7.5A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 23.5 nC @ 10 V | 870 pF @ 15 V | ±20V | - | 4W (Tc) | 43mOhm @ 5.3A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |