图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET P-CH TO220-3
|
封装: TO-220-3 |
库存4,880 |
|
MOSFET (Metal Oxide) | 40V | 72A (Tc) | 10V | 4V @ 120µA | 70nC @ 10V | 4810pF @ 25V | ±20V | - | 75W (Tc) | 9.4 mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 80V 70A TO220-3
|
封装: TO-220-3 |
库存6,816 |
|
MOSFET (Metal Oxide) | 80V | 70A (Tc) | 6V, 10V | 3.5V @ 46µA | 35nC @ 10V | 2410pF @ 40V | ±20V | - | 100W (Tc) | 10 mOhm @ 46A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Renesas Electronics America |
MOSFET N-CH 30V MP-25ZP/TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,272 |
|
MOSFET (Metal Oxide) | 30V | 110A (Tc) | 10V | 4V @ 250µA | 380nC @ 10V | 24600pF @ 25V | ±20V | - | 1.8W (Ta), 288W (Tc) | 1.5 mOhm @ 55A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
NXP |
MOSFET N-CH 40V 75A TO220AB
|
封装: TO-220-3 |
库存2,640 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 4.5V, 10V | 2V @ 1mA | 93.6nC @ 5V | 7880pF @ 25V | ±15V | - | 300W (Tc) | 2.8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET NCH 40V 240A D2PAK
|
封装: TO-263-7, D2Pak (6 Leads + Tab) |
库存6,224 |
|
MOSFET (Metal Oxide) | 40V | 240A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 266nC @ 4.5V | 16488pF @ 25V | ±16V | - | 375W (Tc) | 0.75 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab) |
||
IXYS |
MOSFET N-CH TO-3P
|
封装: TO-3P-3, SC-65-3 |
库存6,080 |
|
MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Vishay Siliconix |
MOSFET P-CH 100V 6.8A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,344 |
|
MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | ±20V | - | 3.7W (Ta), 60W (Tc) | 600 mOhm @ 4.1A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 6A 8SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存36,672 |
|
MOSFET (Metal Oxide) | 100V | 6A (Ta) | 4.5V, 10V | 2.7V @ 250µA | 44nC @ 10V | 2000pF @ 50V | ±20V | - | 3.1W (Ta) | 37 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Nexperia USA Inc. |
MOSFET N-CH 30V TO-236AB
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存5,856 |
|
MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 5.5nC @ 10V | 160pF @ 15V | ±20V | - | 460mW (Ta), 4.5W (Tc) | 72 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
Nexperia USA Inc. |
MOSFET P-CH 30V 2.4A DFN1010D-3
|
封装: 3-XDFN Exposed Pad |
库存3,152 |
|
MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 11nC @ 10V | 309pF @ 15V | ±20V | - | 400mW (Ta), 8.3W (Tc) | 120 mOhm @ 2.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN1010D-3 | 3-XDFN Exposed Pad |
||
Global Power Technologies Group |
MOSFET N-CH 200V 18A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存18,618 |
|
MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 5V @ 250µA | 18nC @ 10V | 950pF @ 25V | ±30V | - | 94W (Tc) | 170 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 30V 18A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存8,244 |
|
MOSFET (Metal Oxide) | 30V | 18A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 28nC @ 10V | 1040pF @ 15V | ±20V | - | 3.3W (Ta), 14.7W (Tc) | 9 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Infineon Technologies |
MOSFET N-CH 75V 170A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存16,656 |
|
MOSFET (Metal Oxide) | 75V | 170A (Tc) | 10V | 4V @ 250µA | 260nC @ 10V | 7600pF @ 50V | ±20V | - | 300W (Tc) | 4.5 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 200V 9.3A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存211,392 |
|
MOSFET (Metal Oxide) | 200V | 9.3A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | ±20V | - | 82W (Tc) | 300 mOhm @ 5.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存3,888,180 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 2.35V @ 25µA | 12nC @ 4.5V | 1020pF @ 15V | ±20V | - | 2.5W (Ta) | 8.7 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 100V 140A WSON-8
|
封装: - |
库存25,530 |
|
MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 6V, 10V | 3.8V @ 95µA | 72 nC @ 10 V | 5300 pF @ 50 V | ±20V | - | 3W (Ta), 167W (Tc) | 4mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-WSON-8-2 | 8-PowerWDFN |
||
Goford Semiconductor |
MOSFET P-CH 40V 80A TO-263
|
封装: - |
库存2,400 |
|
MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 106 nC @ 10 V | 6516 pF @ 20 V | ±20V | - | 115W (Tc) | 6.5mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH PLUS220
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 650V 8HSOF
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | TOLL | 8-PowerSFN |
||
Diodes Incorporated |
BSS FAMILY SOT23 T&R 10K
|
封装: - |
库存60,000 |
|
MOSFET (Metal Oxide) | 50 V | 130mA (Ta) | 5V | 2V @ 1mA | 0.59 nC @ 10 V | 45 pF @ 25 V | ±20V | - | 300mW (Ta) | 10Ohm @ 100mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Rohm Semiconductor |
750V, 51A, 7-PIN SMD, TRENCH-STR
|
封装: - |
库存3,000 |
|
SiC (Silicon Carbide Junction Transistor) | 750 V | 51A (Tc) | 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | 2320 pF @ 500 V | +21V, -4V | - | - | 34mOhm @ 29A, 18V | 175°C (TJ) | Surface Mount | TO-263-7LA | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Renesas Electronics Corporation |
MOSFET N-CH 20V 65A TO220-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 65A (Tc) | - | 2.5V @ 1mA | 32 nC @ 10 V | 1700 pF @ 10 V | - | - | - | 5.7mOhm @ 40A, 10V | - | Through Hole | TO-220-3 | TO-220-3 Isolated Tab |
||
Diodes Incorporated |
MOSFET BVDSS: 41V~60V X1-DFN1616
|
封装: - |
库存7,248 |
|
MOSFET (Metal Oxide) | 60 V | 6.5A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 9.1 nC @ 10 V | 639 pF @ 30 V | ±20V | - | 780mW (Ta) | 25mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN1616-6 (Type K) | 6-PowerUFDFN |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 40V 14A/50A DPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 14A (Ta), 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 56 nC @ 10 V | 2400 pF @ 20 V | ±20V | - | 3.1W (Ta), 48.1W (Tc) | 8.8mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Panjit International Inc. |
80V/ 3.4MOHM / TJMAX 175C MV MOS
|
封装: - |
库存5,982 |
|
MOSFET (Metal Oxide) | 80 V | 166A (Tc) | 7V, 10V | 3.75V @ 250µA | 76 nC @ 7 V | 7430 pF @ 40 V | ±20V | - | 156W (Tc) | 3.4mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB-L | TO-220-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 41V-60V U-DFN2020-
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 3.2A (Ta) | 4.5V, 10V | 3V @ 250µA | 8.9 nC @ 10 V | 612 pF @ 20 V | ±20V | - | 800mW (Ta) | 155mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
||
Micro Commercial Co |
Interface
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 6A | 2.5V, 4.5V | 1V @ 250µA | 12 nC @ 10 V | 515 pF @ 10 V | ±10V | - | 1.25W | 28mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |