图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,704 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 180µA | 110nC @ 10V | 3400pF @ 25V | ±20V | - | 250W (Tc) | 6.3 mOhm @ 68A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH PLUS247
|
封装: - |
库存2,128 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics America |
MOSFET N-CH 40V 60A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,160 |
|
MOSFET (Metal Oxide) | 40V | 60A (Tc) | 10V | 4V @ 250µA | 95nC @ 10V | 5100pF @ 25V | ±20V | - | 1.8W (Ta), 88W (Tc) | 6.1 mOhm @ 30A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 30V 2.5A SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存555,084 |
|
MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 15nC @ 10V | 400pF @ 15V | ±20V | - | 710mW (Ta) | 72 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
ON Semiconductor |
MOSFET N-CH 60V 60A TO220AB
|
封装: TO-220-3 |
库存390,000 |
|
MOSFET (Metal Oxide) | 60V | 60A (Ta) | 5V | 2V @ 250µA | 65nC @ 5V | 3075pF @ 25V | ±15V | - | 2.4W (Ta), 150W (Tj) | 16 mOhm @ 30A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 60V 27A TO220AB
|
封装: TO-220-3 |
库存2,864 |
|
MOSFET (Metal Oxide) | 60V | 27A (Ta) | 10V | 4V @ 250µA | 30nC @ 10V | 1015pF @ 25V | ±20V | - | 88.2W (Tc) | 46 mOhm @ 13.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC
|
封装: TO-247-3 |
库存8,352 |
|
MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 4V @ 250µA | 105nC @ 10V | 3100pF @ 25V | ±30V | - | 280W (Tc) | 270 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 650V 13.4A TO220-FP
|
封装: TO-220-3 Full Pack |
库存7,056 |
|
MOSFET (Metal Oxide) | 650V | 13.4A (Tc) | 10V | 5V @ 750µA | 84nC @ 10V | 1820pF @ 25V | ±20V | - | 34W (Tc) | 330 mOhm @ 9.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 150V 33A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,976 |
|
MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 5V @ 100µA | 26nC @ 10V | 1750pF @ 50V | ±20V | - | 144W (Tc) | 42 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 1200V 15A ISOPLUS247
|
封装: ISOPLUS247? |
库存3,952 |
|
MOSFET (Metal Oxide) | 1200V | 15A (Tc) | 10V | 6.5V @ 1mA | 225nC @ 10V | 14000pF @ 25V | ±30V | - | 320W (Tc) | 500 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
||
Renesas Electronics America |
MOSFET N-CH 100V 50A TO220
|
封装: TO-220-3 |
库存3,040 |
|
MOSFET (Metal Oxide) | 100V | 50A (Ta) | 10V | - | 59nC @ 10V | 4150pF @ 10V | ±20V | - | 125W (Tc) | 11 mOhm @ 25A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Microchip Technology |
MOSFET N-CH 300V 0.085A SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存20,160 |
|
MOSFET (Metal Oxide) | 300V | 85mA (Tj) | 4.5V | 2.4V @ 1mA | - | 50pF @ 25V | ±20V | - | 360mW (Tc) | 25 Ohm @ 120mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET P-CH 20V 0.77A DFN1006-3
|
封装: 3-UFDFN |
库存3,520 |
|
MOSFET (Metal Oxide) | 20V | 770mA (Ta) | 1.8V, 4.5V | 700mV @ 250µA | 1.5nC @ 8V | 76.5pF @ 10V | ±8V | - | 430mW (Ta) | 495 mOhm @ 400mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN1006 (1.0x0.6) | 3-UFDFN |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,312 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 7.7nC @ 4.5V | 680pF @ 25V | ±20V | - | 40W (Tc) | 9 mOhm @ 16A, 10V | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 600V 30A TO-247
|
封装: TO-247-3 |
库存5,568 |
|
MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 5V @ 250µA | 82nC @ 10V | 5050pF @ 25V | ±30V | - | 540W (Tc) | 240 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 80A TO-263AB
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存37,092 |
|
MOSFET (Metal Oxide) | 60V | 15A (Ta), 80A (Tc) | 10V | 4V @ 250µA | 66nC @ 10V | 3000pF @ 25V | ±20V | - | 175W (Tc) | 7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V TO-252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,416 |
|
MOSFET (Metal Oxide) | 600V | 4.3A (Tc) | 10V | 3.5V @ 130µA | 13nC @ 10V | 280pF @ 100V | ±20V | - | 37W (Tc) | 1 Ohm @ 1.5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET P-CH 40V 14A TO252 DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存13,152 |
|
MOSFET (Metal Oxide) | 40V | 14A (Ta), 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 47.5nC @ 5V | 4234pF @ 20V | ±25V | - | 3.5W (Ta) | 11 mOhm @ 9.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 300V 38A TO-220PAK
|
封装: TO-220-3 |
库存15,006 |
|
MOSFET (Metal Oxide) | 300V | 38A (Tc) | 10V | 5V @ 250µA | 125nC @ 10V | 5168pF @ 50V | ±20V | - | 341W (Tc) | 69 mOhm @ 24A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 20A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存390,000 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | 1800pF @ 50V | ±30V | - | 140W (Tc) | 165 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 6.3A SSOT-6
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存720,516 |
|
MOSFET (Metal Oxide) | 30V | 6.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 15nC @ 10V | 570pF @ 15V | ±20V | - | 1.6W (Ta) | 25 mOhm @ 6.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
||
Diodes Incorporated |
MOSFET N-CH 60V 35A POWERDI3333
|
封装: - |
库存6,000 |
|
MOSFET (Metal Oxide) | 60 V | 35A (Tc) | 4.5V, 10V | 3V @ 250µA | 55 nC @ 10 V | 2711 pF @ 15 V | ±20V | - | 1W (Ta) | 18mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
||
Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Micro Commercial Co |
N-CHANNEL MOSFET, D2-PAK
|
封装: - |
库存2,157 |
|
MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 4V @ 250µA | 56 nC @ 10 V | 1830 pF @ 25 V | ±30V | - | 181W | 290mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Cambridge GaN Devices |
650V GAN HEMT, 55MOHM, DFN8X8. W
|
封装: - |
库存2,253 |
|
GaNFET (Gallium Nitride) | 650 V | 27A (Tc) | 12V | 4.2V @ 10mA | 6 nC @ 12 V | - | +20V, -1V | Current Sensing | - | 77mOhm @ 2.2A, 12V | -55°C ~ 150°C (TJ) | Surface Mount | 16-DFN (8x8) | 16-PowerVDFN |
||
Rohm Semiconductor |
MOSFET N-CH 60V 22A TO252
|
封装: - |
库存31,101 |
|
MOSFET (Metal Oxide) | 60 V | 22A (Ta) | 4V, 10V | 3V @ 1mA | 30 nC @ 10 V | 1500 pF @ 10 V | ±20V | - | 20W (Tc) | 26mOhm @ 22A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
YAGEO XSEMI |
MOSFET P-CH 20V 4.2A SOT23
|
封装: - |
库存3,000 |
|
MOSFET (Metal Oxide) | 20 V | 4.2A (Ta) | 2.5V, 10V | 1.2V @ 250µA | 16 nC @ 4.5 V | 1600 pF @ 10 V | ±12V | - | 1.25W (Ta) | 53mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
onsemi |
MOSFET N-CH 40V 70A TO263AB
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 10V | 4V @ 250µA | 128 nC @ 10 V | 8035 pF @ 25 V | ±20V | - | 167W (Tc) | 5.5mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET N-CH 40V 8A DFN2020MD-6
|
封装: - |
库存40,308 |
|
MOSFET (Metal Oxide) | 40 V | 8A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 17 nC @ 10 V | 637 pF @ 20 V | ±15V | - | 15W (Tc) | 23mOhm @ 8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V SC59 T&R 10
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 12 V | 9.3A (Ta) | 1.2V, 4.5V | 800mV @ 250µA | 50.6 nC @ 8 V | 2426 pF @ 10 V | ±8V | - | 680mW (Ta) | 10mOhm @ 9.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-59-3 | TO-236-3, SC-59, SOT-23-3 |