图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3
|
封装: TO-220-3 |
库存6,128 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 2V @ 180µA | 150nC @ 10V | 3800pF @ 25V | ±20V | - | 250W (Tc) | 6.3 mOhm @ 69A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 8SOIC
|
封装: - |
库存6,416 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
ON Semiconductor |
MOSFET N-CH 100V 72A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存12,252 |
|
MOSFET (Metal Oxide) | 100V | 77A (Tc) | 10V | 4V @ 250µA | 100nC @ 10V | 3700pF @ 25V | ±20V | - | 217W (Tc) | 14 mOhm @ 72A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 100V 80A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,312 |
|
MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 4500pF @ 25V | ±20V | - | - | 13 mOhm @ 76A, 10V | - | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 280V 46A TO-3PF
|
封装: SC-94 |
库存3,456 |
|
MOSFET (Metal Oxide) | 280V | 46A (Tc) | 10V | 5V @ 250µA | 144nC @ 10V | 6700pF @ 25V | ±30V | - | 215W (Tc) | 41 mOhm @ 23A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | SC-94 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 4.8A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,424 |
|
MOSFET (Metal Oxide) | 800V | 4.8A (Tc) | 10V | 5V @ 250µA | 33nC @ 10V | 1250pF @ 25V | ±30V | - | 3.13W (Ta), 140W (Tc) | 2.6 Ohm @ 2.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 16A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存322,248 |
|
MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V | 2V @ 250µA | 48nC @ 4.5V | 3355pF @ 15V | ±12V | - | 3W (Ta) | 7.5 mOhm @ 16A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 60V 18A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存38,400 |
|
MOSFET (Metal Oxide) | 60V | 18A (Tc) | 10V | 4V @ 250µA | 34nC @ 10V | 1100pF @ 25V | ±20V | - | 3.7W (Ta), 88W (Tc) | 140 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MV POWER MOS
|
封装: - |
库存2,784 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 55V 27A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,744 |
|
MOSFET (Metal Oxide) | 55V | 27A (Tc) | 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | ±20V | - | 68W (Tc) | 45 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 60V 40A SO8FL
|
封装: 8-PowerTDFN |
库存6,096 |
|
MOSFET (Metal Oxide) | 60V | 40A (Ta), 287A (Tc) | 4.5V, 10V | 2V @ 250µA | 120nC @ 10V | 8900pF @ 25V | ±20V | - | 3.9W (Ta), 200W (Tc) | 1.2 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 500V 5A I-PAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存12,936 |
|
MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 4.5V @ 250µA | 24nC @ 10V | 490pF @ 25V | ±30V | - | 110W (Tc) | 1.7 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
||
STMicroelectronics |
MOSFET N-CH 600V 18A TO247
|
封装: TO-247-3 |
库存2,864 |
|
MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 1090pF @ 100V | ±25V | - | 150W (Tc) | 188 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 51A TO-220AB
|
封装: TO-220-3 |
库存17,352 |
|
MOSFET (Metal Oxide) | 55V | 51A (Tc) | 4.5V, 10V | 3V @ 250µA | 36nC @ 5V | 1620pF @ 25V | ±16V | - | 80W (Tc) | 13.5 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 20.3A TO220AB
|
封装: TO-220-3 |
库存18,732 |
|
MOSFET (Metal Oxide) | 55V | 20.3A (Tc) | 10V | 4V @ 1mA | 11nC @ 10V | 483pF @ 25V | ±20V | - | 62W (Tc) | 75 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 30V 9.1A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存682,416 |
|
MOSFET (Metal Oxide) | 30V | 9.1A (Ta) | 4.5V, 10V | 3V @ 250µA | 24nC @ 4.5V | 2900pF @ 24V | ±20V | - | 860mW (Ta) | 6.1 mOhm @ 14.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET N-CH 20V 1.35A 3DFN
|
封装: 3-UFDFN |
库存4,544 |
|
MOSFET (Metal Oxide) | 20V | 1.35A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 3.1nC @ 10V | 94pF @ 16V | ±8V | - | 500mW (Ta) | 170 mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN1006 (1.0x0.6) | 3-UFDFN |
||
Diodes Incorporated |
MOSFET P-CH 100V 1.3A SOT23-6
|
封装: SOT-23-6 |
库存78,000 |
|
MOSFET (Metal Oxide) | 100V | 1.3A (Ta) | 6V, 10V | 4V @ 250µA | 10.7nC @ 10V | 424pF @ 50V | ±20V | - | 1.1W (Ta) | 350 mOhm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
||
STMicroelectronics |
MOSFET 750 V 110A H2PAK7
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Goford Semiconductor |
MOSFET, P-CH,-40V,-11A,RD(MAX)<8
|
封装: - |
库存5,820 |
|
MOSFET (Metal Oxide) | 40 V | 11A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 106 nC @ 10 V | 6893 pF @ 20 V | ±20V | - | 2.5W (Tc) | 8mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Micro Commercial Co |
MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 46 nC @ 10 V | 2450 pF @ 25 V | ±20V | - | 45W (Tj) | 21mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060 | 8-PowerTDFN |
||
Rohm Semiconductor |
SICFET N-CH 650V 70A TO247-4L
|
封装: - |
库存513 |
|
SiCFET (Silicon Carbide) | 650 V | 70A (Tc) | 18V | 5.6V @ 13.3mA | 104 nC @ 18 V | 1526 pF @ 500 V | +22V, -4V | - | 262W | 39mOhm @ 27A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 13A (Ta), 53A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 18 nC @ 10 V | 1800 pF @ 15 V | ±20V | - | 2.2W (Ta), 36W (Tc) | 8.3mOhm @ 20A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
||
Infineon Technologies |
40V 2.8M OPTIMOS MOSFET SUPERSO8
|
封装: - |
库存25,095 |
|
MOSFET (Metal Oxide) | 40 V | 24A (Ta), 121A (Tc) | 7V, 10V | 3.4V @ 30µA | 38 nC @ 10 V | 2700 pF @ 20 V | ±20V | - | 3W (Ta), 75W (Tc) | 2.8mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
||
onsemi |
MOSFET N-CH 60V 22A/91A DPAK
|
封装: - |
库存3,603 |
|
MOSFET (Metal Oxide) | 60 V | 22A (Ta), 91A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 17 nC @ 10 V | 2900 pF @ 30 V | ±20V | - | 4.4W (Ta), 76W (Tc) | 4.1mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH TO247
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
MOSFET N-CH 40V 25A TO252
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 25A (Tc) | 4.5V, 10V | 3V @ 250µA | 27 nC @ 10 V | 1210 pF @ 20 V | ±20V | - | 48.4W (Tj) | 7mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI333
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 5V, 10V | 2.5V @ 250µA | 30 nC @ 10 V | 2182 pF @ 20 V | ±20V | - | 3.5W (Ta), 65.2W (Tc) | 3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
||
Panjit International Inc. |
40V P-CHANNEL ENHANCEMENT MODE M
|
封装: - |
库存8,988 |
|
MOSFET (Metal Oxide) | 40 V | 5A (Ta), 16A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 8.3 nC @ 4.5 V | 929 pF @ 15 V | ±20V | - | 2W (Ta), 22W (Tc) | 45mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
MOSFET P-CH 40V 25A DPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 25A (Tc) | 4.5V, 10V | 3V @ 250µA | 23 nC @ 10 V | 1200 pF @ 20 V | ±16V | - | 48.4W (Tj) | 21mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |