页 139 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802
登入/注册
BOM
购物车 0

晶体管 - FET，MOSFET - 单

记录 42,029
页  139/1,401
图片
零件编号
制造商
描述
封装
库存
数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SPD50N03S207GBTMA1
Infineon Technologies

MOSFET N-CH 30V 50A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 46.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,328
MOSFET (Metal Oxide)
30V
50A (Tc)
10V
4V @ 85µA
46.5nC @ 10V
2170pF @ 25V
±20V
-
136W (Tc)
7.3 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
IPP80N06S4L07AKSA1
Infineon Technologies

MOSFET N-CH 60V 80A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封装: TO-220-3
库存2,448
MOSFET (Metal Oxide)
60V
80A (Tc)
4.5V, 10V
2.2V @ 40µA
75nC @ 10V
5680pF @ 25V
±16V
-
79W (Tc)
6.7 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
AO7414_001
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 20V 2A SC70-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 62 mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
封装: SC-70, SOT-323
库存5,792
MOSFET (Metal Oxide)
20V
2A (Ta)
1.8V, 4.5V
1V @ 250µA
3.8nC @ 4.5V
320pF @ 10V
±8V
-
350mW (Ta)
62 mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-3
SC-70, SOT-323
2N6758
Microsemi Corporation

MOSFET N-CH 200V TO-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 490 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-204AA
  • Package / Case: TO-204AA, TO-3
封装: TO-204AA, TO-3
库存2,384
MOSFET (Metal Oxide)
200V
9A (Tc)
10V
4V @ 250µA
39nC @ 10V
-
±20V
-
4W (Ta), 75W (Tc)
490 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-204AA
TO-204AA, TO-3
FQA8N80C_F109
Fairchild/ON Semiconductor

MOSFET N-CH 800V 8.4A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 220W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.55 Ohm @ 4.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
封装: TO-3P-3, SC-65-3
库存2,768
MOSFET (Metal Oxide)
800V
8.4A (Tc)
10V
5V @ 250µA
45nC @ 10V
2050pF @ 25V
±30V
-
220W (Tc)
1.55 Ohm @ 4.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
IRFR310TRR
Vishay Siliconix

MOSFET N-CH 400V 1.7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,472
MOSFET (Metal Oxide)
400V
1.7A (Tc)
10V
4V @ 250µA
12nC @ 10V
170pF @ 25V
±20V
-
2.5W (Ta), 25W (Tc)
3.6 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STH210N75F6-2
STMicroelectronics

MOSFET N-CH 75V 180A H2PAK-2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 171nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
封装: TO-263-3, D2Pak (2 Leads + Tab) Variant
库存10,200
MOSFET (Metal Oxide)
75V
180A (Tc)
10V
4V @ 250µA
171nC @ 10V
11800pF @ 25V
±20V
-
300W (Tc)
2.8 mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
H2PAK
TO-263-3, D2Pak (2 Leads + Tab) Variant
IRF1010NSPBF
Infineon Technologies

MOSFET N-CH 55V 85A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3210pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 43A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,264
MOSFET (Metal Oxide)
55V
85A (Tc)
10V
4V @ 250µA
120nC @ 10V
3210pF @ 25V
±20V
-
180W (Tc)
11 mOhm @ 43A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
MMIX1F160N30T
IXYS

MOSFET N-CH 300V 102A SMPD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 570W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMPD
  • Package / Case: 24-PowerSMD, 21 Leads
封装: 24-PowerSMD, 21 Leads
库存3,952
MOSFET (Metal Oxide)
300V
102A (Tc)
10V
5V @ 8mA
335nC @ 10V
2800pF @ 25V
±20V
-
570W (Tc)
20 mOhm @ 60A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SMPD
24-PowerSMD, 21 Leads
AON6522
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 25V 71A DFN5X6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 71A (Ta), 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7036pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 7.3W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
封装: 8-PowerSMD, Flat Leads
库存7,568
MOSFET (Metal Oxide)
25V
71A (Ta), 200A (Tc)
4.5V, 10V
2V @ 250µA
145nC @ 10V
7036pF @ 15V
±20V
-
7.3W (Ta), 83W (Tc)
0.95 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerSMD, Flat Leads
PMXB40UNEZ
Nexperia USA Inc.

MOSFET N-CH 12V 3.2A DFN1010D-3G

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 556pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1010D-3
  • Package / Case: 3-XDFN Exposed Pad
封装: 3-XDFN Exposed Pad
库存7,680
MOSFET (Metal Oxide)
12V
3.2A (Ta)
1.2V, 4.5V
900mV @ 250µA
11.6nC @ 4.5V
556pF @ 10V
±8V
-
400mW (Ta), 8.33W (Tc)
45 mOhm @ 3.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN1010D-3
3-XDFN Exposed Pad
SI2307-TP
Micro Commercial Co

P-CHANNEL MOSFET, SOT-23 PACKAGE

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W
  • Rds On (Max) @ Id, Vgs: 135 mOhm @ 2.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存7,520
MOSFET (Metal Oxide)
30V
2.7A
10V
3V @ 250µA
6.2nC @ 4.5V
340pF @ 15V
±20V
-
1.1W
135 mOhm @ 2.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
hot SI1021R-T1-GE3
Vishay Siliconix

MOSFET P-CH 60V 190MA SC-75A

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
封装: SC-75A
库存332,280
MOSFET (Metal Oxide)
60V
190mA (Ta)
4.5V, 10V
3V @ 250µA
1.7nC @ 15V
23pF @ 25V
±20V
-
250mW (Ta)
4 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75A
SC-75A
STU11N65M2
STMicroelectronics

MOSFET N-CH 650V 7A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 670 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存18,336
MOSFET (Metal Oxide)
650V
7A (Tc)
10V
4V @ 250µA
12.5nC @ 10V
410pF @ 100V
±25V
-
85W (Tc)
670 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
hot BSB165N15NZ3 G
Infineon Technologies

MOSFET N-CH 150V 9A WDSON-2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 30A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MG-WDSON-2, CanPAK M?
  • Package / Case: 3-WDSON
封装: 3-WDSON
库存913,920
MOSFET (Metal Oxide)
150V
9A (Ta), 45A (Tc)
8V, 10V
4V @ 110µA
35nC @ 10V
2800pF @ 75V
±20V
-
2.8W (Ta), 78W (Tc)
16.5 mOhm @ 30A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
MG-WDSON-2, CanPAK M?
3-WDSON
hot FCH35N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 35A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6640pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 312.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 17.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存108,192
MOSFET (Metal Oxide)
600V
35A (Tc)
10V
5V @ 250µA
181nC @ 10V
6640pF @ 25V
±30V
-
312.5W (Tc)
98 mOhm @ 17.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot FDD8882
Fairchild/ON Semiconductor

MOSFET N-CH 30V 55A D-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存58,920
MOSFET (Metal Oxide)
30V
12.6A (Ta), 55A (Tc)
4.5V, 10V
2.5V @ 250µA
33nC @ 10V
1260pF @ 15V
±20V
-
55W (Tc)
11.5 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
FCU850N80Z
Fairchild/ON Semiconductor

MOSFET N-CH 800V 6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1315pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存21,150
MOSFET (Metal Oxide)
800V
6A (Tc)
10V
4.5V @ 600µA
29nC @ 10V
1315pF @ 100V
±20V
-
75W (Tc)
850 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
hot ZXM62P03E6TA
Diodes Incorporated

MOSFET P-CH 30V 2.6A SOT-23-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 625mW (Ta)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-26
  • Package / Case: SOT-23-6
封装: SOT-23-6
库存1,636,140
MOSFET (Metal Oxide)
30V
1.5A (Ta)
4.5V, 10V
1V @ 250µA
10.2nC @ 10V
330pF @ 25V
±20V
-
625mW (Ta)
150 mOhm @ 1.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-26
SOT-23-6
AO3413-ML
MOSLEADER

P -20V -3A SOT23-3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MTD1P40ET4
onsemi

TRANSISTOR

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400 V
  • Current - Continuous Drain (Id) @ 25°C: 1A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Tc)
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
Request a Quote
MOSFET (Metal Oxide)
400 V
1A
10V
4V @ 250µA
20 nC @ 10 V
500 pF @ 25 V
±20V
-
1.75W (Tc)
8Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
NTVS3141PT2G
onsemi

MOSFET P-CH 20V CSP-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-FlipChip (1x1.5)
  • Package / Case: 6-UFBGA, FCBGA
封装: -
Request a Quote
MOSFET (Metal Oxide)
20 V
2.9A (Ta)
-
-
-
-
-
-
-
-
-
Surface Mount
6-FlipChip (1x1.5)
6-UFBGA, FCBGA
C3M0065100J-TR
Wolfspeed, Inc.

SICFET N-CH 1000V 35A TO263-7

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V
  • Vgs (Max): +15V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 113.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
封装: -
库存2,400
SiCFET (Silicon Carbide)
1000 V
35A (Tc)
15V
3.5V @ 5mA
35 nC @ 15 V
660 pF @ 600 V
+15V, -4V
-
113.5W (Tc)
78mOhm @ 20A, 15V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
MTAJ3055EL
onsemi

NFET T0220FP JPN

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NTB190N65S3HF
onsemi

MOSFET N-CH 650V 20A D2PAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 430µA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 162W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
Request a Quote
MOSFET (Metal Oxide)
650 V
20A (Tc)
10V
5V @ 430µA
34 nC @ 10 V
1610 pF @ 400 V
±30V
-
162W (Tc)
190mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PMCA14UNYL
Nexperia USA Inc.

SMALL SIGNAL MOSFET FOR MOBILE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 3.3 V
  • Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DSN1010-3
  • Package / Case: 3-XDFN
封装: -
库存15,000
MOSFET (Metal Oxide)
12 V
11A (Ta)
1.8V, 4.5V
900mV @ 250µA
12 nC @ 3.3 V
855 pF @ 6 V
±8V
-
1.2W (Ta), 31W (Tc)
16mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DSN1010-3
3-XDFN
NP36N055HLE-AY
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPDD60R105CFD7XTMA1
Infineon Technologies

MOSFET N-CH 600V 31A HDSOP-10

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4.5V @ 390µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1504 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 198W (Tc)
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-10-1
  • Package / Case: 10-PowerSOP Module
封装: -
库存216
MOSFET (Metal Oxide)
600 V
31A (Tc)
-
4.5V @ 390µA
36 nC @ 10 V
1504 pF @ 400 V
±20V
-
198W (Tc)
105mOhm @ 7.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-HDSOP-10-1
10-PowerSOP Module
IRFR220BTM
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
Request a Quote
MOSFET (Metal Oxide)
200 V
4.6A (Tc)
10V
4V @ 250µA
16 nC @ 10 V
390 pF @ 25 V
±30V
-
2.5W (Ta), 40W (Tc)
800mOhm @ 2.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DI070P04PQ
Diotec Semiconductor

IC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-QFN (5x6)
  • Package / Case: 8-PowerTDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
70A (Tc)
4.5V, 10V
2.5V @ 250µA
125 nC @ 10 V
7560 pF @ 20 V
±20V
-
46W (Tc)
6.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-QFN (5x6)
8-PowerTDFN