图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 17A TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,000 |
|
MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 4V @ 20µA | 9nC @ 10V | 569pF @ 50V | ±20V | - | 44W (Tc) | 64 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 20A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,128 |
|
MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 10nC @ 10V | 1000pF @ 15V | ±20V | - | 31W (Tc) | 14.7 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 56A I-PAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存240,108 |
|
MOSFET (Metal Oxide) | 30V | 56A (Tc) | 4.5V, 10V | 2.25V @ 25µA | 14nC @ 4.5V | 1150pF @ 15V | ±20V | - | 50W (Tc) | 9.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 100V 6.5A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存449,076 |
|
MOSFET (Metal Oxide) | 100V | 6.5A (Tc) | 4.5V, 10V | 3V @ 250µA | 4nC @ 5V | 240pF @ 25V | ±20V | - | 1.25W (Ta), 16.7W (Tc) | 200 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 900V 12A PLUS220
|
封装: TO-220-3, Short Tab |
库存3,264 |
|
MOSFET (Metal Oxide) | 900V | 12A (Tc) | 10V | 6.5V @ 1mA | 56nC @ 10V | 3080pF @ 25V | ±30V | - | 380W (Tc) | 900 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS220 | TO-220-3, Short Tab |
||
NXP |
MOSFET N-CH 40V 75A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,624 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 1mA | 94nC @ 10V | 5100pF @ 25V | ±20V | - | 300W (Tc) | 3.1 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 60V 200MA TO-92
|
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
库存206,172 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 3V @ 1mA | - | 60pF @ 25V | ±20V | - | 350mW (Tc) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
||
Infineon Technologies |
MOSFET N-CH TO263-7
|
封装: TO-263-7, D2Pak (6 Leads + Tab) |
库存7,168 |
|
MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 4V @ 230µA | 290nC @ 10V | 23000pF @ 25V | ±20V | - | 300W (Tc) | 0.87 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D2Pak (6 Leads + Tab) |
||
IXYS |
MOSFET N-CH 75V 170A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,400 |
|
MOSFET (Metal Oxide) | 75V | 170A (Tc) | 10V | 4V @ 250µA | 109nC @ 10V | 6860pF @ 25V | ±20V | - | 360W (Tc) | 5.4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 5.5A TO-220
|
封装: TO-220-3 |
库存134,508 |
|
MOSFET (Metal Oxide) | 600V | 5.5A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 810pF @ 25V | ±30V | - | 125W (Tc) | 2 Ohm @ 2.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Microchip Technology |
MOSFET P-CH 20V 0.63A SOT89-3
|
封装: TO-243AA |
库存285,996 |
|
MOSFET (Metal Oxide) | 20V | 630mA (Tj) | 5V, 10V | 2.4V @ 1mA | - | 125pF @ 20V | ±20V | - | 1.6W (Ta) | 2 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 30A DPAK-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,456 |
|
MOSFET (Metal Oxide) | 60V | 30A (Ta) | 6V, 10V | 3V @ 1mA | 28nC @ 10V | 1350pF @ 10V | ±20V | - | 58W (Tc) | 18 Ohm @ 15A, 10V | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 600V DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存36,768 |
|
MOSFET (Metal Oxide) | 600V | 7.5A (Tc) | 10V | 4V @ 250µA | 13.5nC @ 10V | 400pF @ 100V | ±25V | - | 85W (Tc) | 600 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Micro Commercial Co |
N-CHANNEL MOSFET, SOP-8 PACKAGE
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存5,360 |
|
MOSFET (Metal Oxide) | 30V | 8.58A | 10V | 3V @ 250µA | 23nC @ 10V | 1250pF @ 15V | ±20V | - | 1.4W | 26 mOhm @ 6A, 4.5V | -55°C ~ 150°C (TA) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
STMicroelectronics |
MOSFET N-CH 1200V 45A HIP247
|
封装: TO-247-3 |
库存5,488 |
|
SiCFET (Silicon Carbide) | 1200V | 40A (Tc) | 20V | 2.6V @ 1mA (Typ) | 105nC @ 20V | 1700pF @ 400V | +25V, -10V | - | 270W (Tc) | 100 mOhm @ 20A, 20V | -55°C ~ 200°C (TJ) | Through Hole | HiP247? | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 150A 8DSOP
|
封装: 8-PowerWDFN |
库存7,360 |
|
MOSFET (Metal Oxide) | 40V | 150A (Tc) | 4.5V, 10V | 2.4V @ 1mA | 103nC @ 10V | 9600pF @ 20V | ±20V | - | 1W (Ta), 170W (Tc) | 0.8 mOhm @ 50A, 10V | 175°C (TJ) | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
||
Texas Instruments |
MOSFET N-CH 25V 5X6 100A 8SON
|
封装: 8-PowerTDFN |
库存6,420 |
|
MOSFET (Metal Oxide) | 25V | 33A (Ta), 100A (Tc) | 3V, 8V | 1.4V @ 250µA | 25nC @ 4.5V | 4000pF @ 12.5V | +10V, -8V | - | 3.1W (Ta) | 2 mOhm @ 30A, 8V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
||
Rohm Semiconductor |
MOSFET N-CH 30V 1.4A WEMT6
|
封装: SOT-563, SOT-666 |
库存192,000 |
|
MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4V, 10V | 2.5V @ 1mA | 1.4nC @ 5V | 70pF @ 10V | ±20V | - | 700mW (Ta) | 240 mOhm @ 1.4A, 10V | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
||
Texas Instruments |
MOSFET N-CH 30V 35A 8VSON
|
封装: 8-PowerVDFN |
库存24,564 |
|
MOSFET (Metal Oxide) | 30V | 35A (Ta) | 4.5V, 10V | 1.8V @ 250µA | 35nC @ 10V | 2310pF @ 15V | ±20V | - | 2.8W (Ta), 53W (Tc) | 4.8 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (3x3.15) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 12A 5X6 PQFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 14A (Ta), 44A (Tc) | - | 2.35V @ 25µA | 15 nC @ 10 V | 1180 pF @ 10 V | - | - | - | 9mOhm @ 20A, 10V | - | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 100V 150A 8HSOF
|
封装: - |
库存22,539 |
|
MOSFET (Metal Oxide) | 100 V | 150A (Tc) | 6V, 10V | 3.8V @ 110µA | 87 nC @ 10 V | 6110 pF @ 50 V | ±20V | - | 166W (Tc) | 3.5mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
||
Vishay Siliconix |
MOSFET P-CHANNEL 12V 8A 6TSOP
|
封装: - |
库存17,970 |
|
MOSFET (Metal Oxide) | 12 V | 8A (Tc) | 1.8V, 4.5V | 1V @ 250µA | 28 nC @ 4.5 V | 2000 pF @ 6 V | ±8V | - | 5W (Tc) | 25mOhm @ 7.9A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Micro Commercial Co |
P-CHANNEL MOSFET, DPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 12A | - | 2V @ 250µA | 26 nC @ 10 V | 1460 pF @ 50 V | ±25V | - | 50W | 185mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics Corporation |
N-CHANNEL POWER SWITCHING MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 101V~250V U-DFN202
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 115 V | 4.4A (Ta) | 1.5V, 4.5V | 1.4V @ 250µA | 7.8 nC @ 4.5 V | 475 pF @ 50 V | ±8V | - | 1.1W (Ta) | 65mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
SMOS LOW RON NCH ID: 4A VDSS: 30
|
封装: - |
库存18,000 |
|
MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 1.8V, 4.5V | 1V @ 1mA | 2.2 nC @ 4.5 V | 200 pF @ 10 V | +12V, -8V | - | 1W (Ta) | 56mOhm @ 2A, 4.5V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
||
Diodes Incorporated |
MOSFET N-CH 30V 60A POWERDI3333
|
封装: - |
库存8,820 |
|
MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 3V @ 250µA | 8.4 nC @ 10 V | 1155 pF @ 15 V | ±20V | - | 2W (Ta) | 7mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |