页 81 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO4614B_101	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 40V 6A/5A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A, 5A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,704	Logic Level Gate	40V	6A, 5A	30 mOhm @ 6A, 10V	3V @ 250µA	10.8nC @ 10V	650pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQJ962EP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 8A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Power - Max: 25W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存32,892	Logic Level Gate	60V	8A	60 mOhm @ 4.3A, 10V	2.5V @ 250µA	14nC @ 10V	475pF @ 25V	25W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI5903DC-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 2.1A 1206-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封装: 8-SMD, Flat Lead	库存5,504	Logic Level Gate	20V	2.1A	155 mOhm @ 2.1A, 4.5V	600mV @ 250µA (Min)	6nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
GWM160-0055X1-SL	IXYS	MOSFET 6N-CH 55V 150A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL?	封装: 17-SMD, Flat Leads	库存4,432	Standard	55V	150A	3.3 mOhm @ 100A, 10V	4.5V @ 1mA	105nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Flat Leads	ISOPLUS-DIL?
DMP57D5UV-7	Diodes Incorporated	MOSFET 2P-CH 50V 0.16A SOT563 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 160mA Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 29pF @ 25V Power - Max: 400mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: SOT-563, SOT-666	库存660,000	Logic Level Gate	50V	160mA	6 Ohm @ 100mA, 4V	1V @ 250µA	-	29pF @ 25V	400mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SI6928DQ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4A 8-TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存3,984	Logic Level Gate	30V	4A	35 mOhm @ 4A, 10V	1V @ 250µA	14nC @ 5V	-	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI1033X-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 0.145A SOT563F FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 145mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	封装: SOT-563, SOT-666	库存324,000	Logic Level Gate	20V	145mA	8 Ohm @ 150mA, 4.5V	1.2V @ 250µA	1.5nC @ 4.5V	-	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
FDR8305N	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 4.5A SSOT-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Supplier Device Package: SuperSOT?-8	封装: 8-SMD, Gull Wing	库存3,216	Logic Level Gate	20V	4.5A	22 mOhm @ 4.5A, 4.5V	1.5V @ 250µA	23nC @ 4.5V	1600pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Gull Wing	SuperSOT?-8
APTC60DSKM45T1G	Microsemi Corporation	MOSFET 2N-CH 600V 49A SP1 FET Type: 2 N Channel (Dual Buck Chopper) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	封装: SP1	库存3,072	Super Junction	600V	49A	45 mOhm @ 24.5A, 10V	3.9V @ 3mA	150nC @ 10V	7200pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
DMP3056LSD-13	Diodes Incorporated	MOSFET 2P-CH 30V 6.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存634,416	Logic Level Gate	30V	6.9A	45 mOhm @ 6A, 10V	2.1V @ 250µA	13.7nC @ 10V	722pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
QS8M11TCR	Rohm Semiconductor	MOSFET N/P-CH 30V 3.5A TSMT8 FET Type: N and P-Channel FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	封装: 8-SMD, Flat Lead	库存2,896	-	30V	3.5A	-	-	-	-	-	-	Surface Mount	8-SMD, Flat Lead	TSMT8
NTJD4158CT1G	ON Semiconductor	MOSFET N/P-CH 30V/20V SOT-363 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存3,710,988	Logic Level Gate	30V, 20V	250mA, 880mA	1.5 Ohm @ 10mA, 4.5V	1.5V @ 100µA	1.5nC @ 5V	33pF @ 5V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
DMN63D8LDWQ-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.22A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存6,992	Standard	30V	220mA	2.8 Ohm @ 250mA, 10V	1.5V @ 250µA	0.87nC @ 10V	22pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMP2100UFU-7	Diodes Incorporated	MOSFET 2P-CH 20V U-DFN2030-6 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A Rds On (Max) @ Id, Vgs: 38 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	封装: 6-UFDFN Exposed Pad	库存24,690	Standard	20V	5.7A	38 mOhm @ 3.5A, 10V	1.4V @ 250µA	21.4nC @ 10V	906pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN2030-6 (Type B)
CSD87330Q3D	Texas Instruments	MOSFET 2N-CH 30V 20A 8SON FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (3.3x3.3)	封装: 8-PowerLDFN	库存203,400	Logic Level Gate	30V	20A	-	2.1V @ 250µA	5.8nC @ 4.5V	900pF @ 15V	6W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (3.3x3.3)
DMN62D2UDW-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	Request a Quote	-	60V	340mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
GSFK0300	Good-Ark Semiconductor	MOSFET 2N-CH 30V 0.8A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 15V Power - Max: 275mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	库存8,034	-	30V	800mA (Tc)	450mOhm @ 300mA, 4.5V	1.2V @ 250µA	5.2nC @ 4.5V	146pF @ 15V	275mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SIA938DJT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 4.5A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V Power - Max: 1.9W (Ta), 7.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual	封装: -	库存35,379	-	20V	4.5A (Ta), 4.5A (Tc)	21.5mOhm @ 5A, 10V	1.5V @ 250µA	11.5nC @ 10V	425pF @ 10V	1.9W (Ta), 7.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual
IRF7313TRPBFXTMA1	Infineon Technologies	MOSFET 2N-CH 30V 6.5A 8DSO-902 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8-902	封装: -	库存22,074	-	30V	6.5A (Ta)	29mOhm @ 5.8A, 10V	1V @ 250µA	33nC @ 10V	650pF @ 25V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8-902
FF6MR12W2M1HPB11BPSA1	Infineon Technologies	SIC 2N-CH 1200V 200A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V Vgs(th) (Max) @ Id: 5.55V @ 80mA Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	库存54	-	1200V (1.2kV)	200A (Tj)	5.63mOhm @ 200A, 15V	5.55V @ 80mA	496nC @ 15V	14700pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
XP2530AGY	YAGEO XSEMI	MOSFET N AND P-CH 30V 3.3A 2.3A FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 2.3A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V, 150mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V, 260pF @ 15V Power - Max: 1.136W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	封装: -	库存2,985	-	30V	3.3A (Ta), 2.3A (Ta)	72mOhm @ 3A, 10V, 150mOhm @ 2A, 10V	3V @ 250µA	4.5nC @ 4.5V	320pF @ 15V, 260pF @ 15V	1.136W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
MTC120WX55GD-SMD	IXYS	MOSFET 6N-CH 55V 150A FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	55V	150A (Tc)	3.1mOhm @ 100A, 10V	4V @ 1mA	100nC @ 10V	6970pF @ 25V	-	-55°C ~ 175°C (TJ)	-	-	-
DMN53D0LDWQ-7	Diodes Incorporated	MOSFET 2N-CH 50V 0.46A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V Power - Max: 400mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	库存9,000	-	50V	460mA (Ta)	1.6Ohm @ 500mA, 10V	1.5V @ 250µA	1.4nC @ 10V	49.5pF @ 25V	400mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DF419MR20W3M1HFB11BPSA1	Infineon Technologies	MOSFET 4N-CH 2000V 50A AG-EASY3B FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 2000V (2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 60A, 18V Vgs(th) (Max) @ Id: 5.15V @ 34mA Gate Charge (Qg) (Max) @ Vgs: 234nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 1.2kV Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY3B	封装: -	库存3	-	2000V (2kV)	50A (Tj)	26.5mOhm @ 60A, 18V	5.15V @ 34mA	234nC @ 18V	7240pF @ 1.2kV	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-EASY3B
SQJB46ELP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封装: -	库存9,000	-	40V	30A (Tc)	8mOhm @ 8A, 10V	2.2V @ 250µA	40nC @ 10V	2100pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
FF3MR12KM1HPHPSA1	Infineon Technologies	FF3MR12KM1HPHPSA1 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 220A Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V Vgs(th) (Max) @ Id: 5.1V @ 112mA Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MMHB	封装: -	Request a Quote	-	1200V (1.2kV)	220A	4.44mOhm @ 280A, 18V	5.1V @ 112mA	800nC @ 18V	24200pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-62MMHB
EPC2104	EPC	GANFET 2N-CH 100V 23A DIE FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	库存13,416	-	100V	23A	6.3mOhm @ 20A, 5V	2.5V @ 5.5mA	7nC @ 5V	800pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
DMC3732UVTQ-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250µA, 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V Power - Max: 540mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	30V	1.1A (Ta), 700mA (Ta)	460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V	0.95V @ 250µA, 1.1V @ 250µA	0.9nC @ 4.5V, 1.6nC @ 8V	40.8pF @ 25V, 54pF @ 15V	540mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
LP8M3FP8TB1	Rohm Semiconductor	MOSFET N-CH SOP8G FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NVMFD024N06CT1G	onsemi	MOSFET 2N-CH 60V 8A/24A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V Power - Max: 3.1W (Ta), 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封装: -	Request a Quote	-	60V	8A (Ta), 24A (Tc)	22.6mOhm @ 3A, 10V	4V @ 20µA	5.7nC @ 10V	333pF @ 30V	3.1W (Ta), 28W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)

AO4614B_101

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 40V 6A/5A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A, 5A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,704

Logic Level Gate

40V

6A, 5A

30 mOhm @ 6A, 10V

3V @ 250µA

10.8nC @ 10V

650pF @ 20V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SQJ962EP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 8A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Power - Max: 25W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存32,892

Logic Level Gate

60V

8A

60 mOhm @ 4.3A, 10V

2.5V @ 250µA

14nC @ 10V

475pF @ 25V

25W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI5903DC-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 2.1A 1206-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封装: 8-SMD, Flat Lead

库存5,504

Logic Level Gate

20V

2.1A

155 mOhm @ 2.1A, 4.5V

600mV @ 250µA (Min)

6nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

GWM160-0055X1-SL

IXYS

MOSFET 6N-CH 55V 150A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Flat Leads
Supplier Device Package: ISOPLUS-DIL?

封装: 17-SMD, Flat Leads

库存4,432

Standard

55V

150A

3.3 mOhm @ 100A, 10V

4.5V @ 1mA

105nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Flat Leads

ISOPLUS-DIL?

DMP57D5UV-7

Diodes Incorporated

MOSFET 2P-CH 50V 0.16A SOT563

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 160mA
Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 29pF @ 25V
Power - Max: 400mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: SOT-563, SOT-666

库存660,000

Logic Level Gate

50V

160mA

6 Ohm @ 100mA, 4V

1V @ 250µA

-

29pF @ 25V

400mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

SI6928DQ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 4A 8-TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存3,984

Logic Level Gate

30V

4A

35 mOhm @ 4A, 10V

1V @ 250µA

14nC @ 5V

-

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI1033X-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 0.145A SOT563F

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 145mA
Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

封装: SOT-563, SOT-666

库存324,000

Logic Level Gate

20V

145mA

8 Ohm @ 150mA, 4.5V

1.2V @ 250µA

1.5nC @ 4.5V

-

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

FDR8305N

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 4.5A SSOT-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Supplier Device Package: SuperSOT?-8

封装: 8-SMD, Gull Wing

库存3,216

Logic Level Gate

20V

4.5A

22 mOhm @ 4.5A, 4.5V

1.5V @ 250µA

23nC @ 4.5V

1600pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Gull Wing

SuperSOT?-8

APTC60DSKM45T1G

Microsemi Corporation

MOSFET 2N-CH 600V 49A SP1

FET Type: 2 N Channel (Dual Buck Chopper)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

封装: SP1

库存3,072

Super Junction

600V

49A

45 mOhm @ 24.5A, 10V

3.9V @ 3mA

150nC @ 10V

7200pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

DMP3056LSD-13

Diodes Incorporated

MOSFET 2P-CH 30V 6.9A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 722pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存634,416

Logic Level Gate

30V

6.9A

45 mOhm @ 6A, 10V

2.1V @ 250µA

13.7nC @ 10V

722pF @ 25V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

QS8M11TCR

Rohm Semiconductor

MOSFET N/P-CH 30V 3.5A TSMT8

FET Type: N and P-Channel
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

封装: 8-SMD, Flat Lead

库存2,896

-

30V

3.5A

-

Surface Mount

8-SMD, Flat Lead

TSMT8

NTJD4158CT1G

ON Semiconductor

MOSFET N/P-CH 30V/20V SOT-363

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存3,710,988

Logic Level Gate

30V, 20V

250mA, 880mA

1.5 Ohm @ 10mA, 4.5V

1.5V @ 100µA

1.5nC @ 5V

33pF @ 5V

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

DMN63D8LDWQ-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.22A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA
Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存6,992

Standard

30V

220mA

2.8 Ohm @ 250mA, 10V

1.5V @ 250µA

0.87nC @ 10V

22pF @ 25V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMP2100UFU-7

Diodes Incorporated

MOSFET 2P-CH 20V U-DFN2030-6

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Rds On (Max) @ Id, Vgs: 38 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: U-DFN2030-6 (Type B)

封装: 6-UFDFN Exposed Pad

库存24,690

Standard

20V

5.7A

38 mOhm @ 3.5A, 10V

1.4V @ 250µA

21.4nC @ 10V

906pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

U-DFN2030-6 (Type B)

CSD87330Q3D

Texas Instruments

MOSFET 2N-CH 30V 20A 8SON

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Power - Max: 6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-LSON (3.3x3.3)

封装: 8-PowerLDFN

库存203,400

Logic Level Gate

30V

20A

-

2.1V @ 250µA

5.8nC @ 4.5V

900pF @ 15V

6W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

8-LSON (3.3x3.3)

DMN62D2UDW-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT363 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

Request a Quote

-

60V

340mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

0.8nC @ 4.5V

41pF @ 30V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

GSFK0300

Good-Ark Semiconductor

MOSFET 2N-CH 30V 0.8A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 15V
Power - Max: 275mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

库存8,034

-

30V

800mA (Tc)

450mOhm @ 300mA, 4.5V

1.2V @ 250µA

5.2nC @ 4.5V

146pF @ 15V

275mW (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SIA938DJT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 4.5A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Power - Max: 1.9W (Ta), 7.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual

封装: -

库存35,379

-

20V

4.5A (Ta), 4.5A (Tc)

21.5mOhm @ 5A, 10V

1.5V @ 250µA

11.5nC @ 10V

425pF @ 10V

1.9W (Ta), 7.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® SC-70-6 Dual

IRF7313TRPBFXTMA1

Infineon Technologies

MOSFET 2N-CH 30V 6.5A 8DSO-902

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8-902

封装: -

库存22,074

-

30V

6.5A (Ta)

29mOhm @ 5.8A, 10V

1V @ 250µA

33nC @ 10V

650pF @ 25V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8-902

FF6MR12W2M1HPB11BPSA1

Infineon Technologies

SIC 2N-CH 1200V 200A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

库存54

-

1200V (1.2kV)

200A (Tj)

5.63mOhm @ 200A, 15V

5.55V @ 80mA

496nC @ 15V

14700pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

XP2530AGY

YAGEO XSEMI

MOSFET N AND P-CH 30V 3.3A 2.3A

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3A, 10V, 150mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V, 260pF @ 15V
Power - Max: 1.136W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

封装: -

库存2,985

-

30V

3.3A (Ta), 2.3A (Ta)

72mOhm @ 3A, 10V, 150mOhm @ 2A, 10V

3V @ 250µA

4.5nC @ 4.5V

320pF @ 15V, 260pF @ 15V

1.136W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

MTC120WX55GD-SMD

IXYS

MOSFET 6N-CH 55V 150A

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

55V

150A (Tc)

3.1mOhm @ 100A, 10V

4V @ 1mA

100nC @ 10V

6970pF @ 25V

-

-55°C ~ 175°C (TJ)

-

DMN53D0LDWQ-7

Diodes Incorporated

MOSFET 2N-CH 50V 0.46A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 49.5pF @ 25V
Power - Max: 400mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

库存9,000

-

50V

460mA (Ta)

1.6Ohm @ 500mA, 10V

1.5V @ 250µA

1.4nC @ 10V

49.5pF @ 25V

400mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DF419MR20W3M1HFB11BPSA1

Infineon Technologies

MOSFET 4N-CH 2000V 50A AG-EASY3B

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 60A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 34mA
Gate Charge (Qg) (Max) @ Vgs: 234nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 1.2kV
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY3B

封装: -

库存3

-

2000V (2kV)

50A (Tj)

26.5mOhm @ 60A, 18V

5.15V @ 34mA

234nC @ 18V

7240pF @ 1.2kV

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

AG-EASY3B

SQJB46ELP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封装: -

库存9,000

-

40V

30A (Tc)

8mOhm @ 8A, 10V

2.2V @ 250µA

40nC @ 10V

2100pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

FF3MR12KM1HPHPSA1

Infineon Technologies

FF3MR12KM1HPHPSA1

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 220A
Rds On (Max) @ Id, Vgs: 4.44mOhm @ 280A, 18V
Vgs(th) (Max) @ Id: 5.1V @ 112mA
Gate Charge (Qg) (Max) @ Vgs: 800nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 24200pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-62MMHB

封装: -

Request a Quote

-

1200V (1.2kV)

220A

4.44mOhm @ 280A, 18V

5.1V @ 112mA

800nC @ 18V

24200pF @ 800V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

AG-62MMHB

EPC2104

EPC

GANFET 2N-CH 100V 23A DIE

FET Type: GaNFET (Gallium Nitride)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

库存13,416

-

100V

23A

6.3mOhm @ 20A, 5V

2.5V @ 5.5mA

7nC @ 5V

800pF @ 50V

-

-40°C ~ 150°C (TJ)

Surface Mount

Die

DMC3732UVTQ-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 0.95V @ 250µA, 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V
Power - Max: 540mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

Request a Quote

-

30V

1.1A (Ta), 700mA (Ta)

460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V

0.95V @ 250µA, 1.1V @ 250µA

0.9nC @ 4.5V, 1.6nC @ 8V

40.8pF @ 25V, 54pF @ 15V

540mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

LP8M3FP8TB1

Rohm Semiconductor

MOSFET N-CH SOP8G

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

NVMFD024N06CT1G

onsemi

MOSFET 2N-CH 60V 8A/24A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V
Power - Max: 3.1W (Ta), 28W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封装: -

Request a Quote

-

60V

8A (Ta), 24A (Tc)

22.6mOhm @ 3A, 10V

4V @ 20µA

5.7nC @ 10V

333pF @ 30V

3.1W (Ta), 28W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)