页 78 - 晶体管 - FET,MOSFET - 阵列 | 分立半导体产品 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802

晶体管 - FET,MOSFET - 阵列

记录 5,684
页  78/190
图片
零件编号
制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BSL214NL6327HTSA1
Infineon Technologies

MOSFET 2N-CH 20V 1.5A 6TSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: PG-TSOP6-6
封装: SOT-23-6 Thin, TSOT-23-6
库存2,480
Logic Level Gate
20V
1.5A
140 mOhm @ 1.5A, 4.5V
1.2V @ 3.7µA
0.8nC @ 5V
143pF @ 10V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
PG-TSOP6-6
hot AO4800L
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 6.9A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存396,000
Standard
30V
6.9A
27 mOhm @ 6.9A, 10V
1.5V @ 250µA
7nC @ 4.5V
630pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI3586DV-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 2.9A 6-TSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
封装: SOT-23-6 Thin, TSOT-23-6
库存1,327,392
Logic Level Gate
20V
2.9A, 2.1A
60 mOhm @ 3.4A, 4.5V
1.1V @ 250µA
6nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
SH8M70TB1
Rohm Semiconductor

MOSFET N/P-CH 250V 3A/2.5A SOP8

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
  • Rds On (Max) @ Id, Vgs: 1.63 Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存5,440
Standard
250V
3A, 2.5A
1.63 Ohm @ 1.5A, 10V
4V @ 1mA
5.2nC @ 10V
180pF @ 25V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot NTUD3128NT5G
ON Semiconductor

MOSFET 2N-CH 20V 0.16A SOT-963

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 160mA
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V
  • Power - Max: 125mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
封装: SOT-963
库存2,925,960
Logic Level Gate
20V
160mA
3 Ohm @ 100mA, 4.5V
1V @ 250µA
-
9pF @ 15V
125mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-963
SOT-963
hot NTMD6N03R2
ON Semiconductor

MOSFET 2N-CH 30V 6A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
  • Power - Max: 1.29W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存582,492
Logic Level Gate
30V
6A
32 mOhm @ 6A, 10V
2.5V @ 250µA
30nC @ 10V
950pF @ 24V
1.29W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
APTM50DUM35TG
Microsemi Corporation

MOSFET 2N-CH 500V 99A SP4

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 99A
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Power - Max: 781W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
封装: SP4
库存3,216
Standard
500V
99A
39 mOhm @ 49.5A, 10V
5V @ 5mA
280nC @ 10V
14000pF @ 25V
781W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
hot SI4932DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
  • Power - Max: 3.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存7,260
Logic Level Gate
30V
8A
15 mOhm @ 7A, 10V
2.5V @ 250µA
48nC @ 10V
1750pF @ 15V
3.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SP8K22FU6TB
Rohm Semiconductor

MOSFET 2N-CH 45V 4.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 45V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存226,836
Logic Level Gate
45V
4.5A
46 mOhm @ 4.5A, 10V
2.5V @ 1mA
9.6nC @ 5V
550pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
hot DMG6968UTS-13
Diodes Incorporated

MOSFET 2N-CH 20V 5.2A 8TSSOP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存402,300
Logic Level Gate
20V
5.2A
23 mOhm @ 6.5A, 4.5V
950mV @ 250µA
8.8nC @ 4.5V
143pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
DMP1046UFDB-13
Diodes Incorporated

MOSFET 2P-CH 12V 3.8A 6UDFN

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存6,672
Standard
12V
3.8A
61 mOhm @ 3.6A, 4.5V
1V @ 250µA
17.9nC @ 8V
915pF @ 6V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
FDMS3686S
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/23A 8-PQFN

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A, 23A
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: Power56
封装: 8-PowerTDFN
库存6,656
Logic Level Gate
30V
13A, 23A
8 mOhm @ 13A, 10V
2.7V @ 250µA
29nC @ 10V
1785pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
Power56
hot SH8K1TB1
Rohm Semiconductor

MOSFET 2N-CH 30V 5A SOP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存1,311,000
Logic Level Gate
30V
5A
51 mOhm @ 5A, 10V
2.5V @ 1mA
5.5nC @ 5V
230pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
ALD310708PCL
Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

  • FET Type: 4 P-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 780mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
封装: 16-DIP (0.300", 7.62mm)
库存6,336
Standard
8V
-
-
780mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
NX3008NBKV,115
Nexperia USA Inc.

MOSFET 2N-CH 30V 0.4A SOT666

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 400mA
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
封装: SOT-563, SOT-666
库存3,504
Logic Level Gate
30V
400mA
1.4 Ohm @ 350mA, 4.5V
1.1V @ 250µA
0.68nC @ 4.5V
50pF @ 15V
500mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-666
hot AO4813
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 30V 7.1A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存11,611,224
Logic Level Gate
30V
7.1A
25 mOhm @ 7.1A, 10V
2.5V @ 250µA
19nC @ 10V
1250pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot DMC2004VK-7
Diodes Incorporated

MOSFET N/P-CH 20V SOT-563

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 670mA, 530mA
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 450mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
封装: SOT-563, SOT-666
库存447,756
Logic Level Gate
20V
670mA, 530mA
550 mOhm @ 540mA, 4.5V
1V @ 250µA
-
150pF @ 16V
450mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot AO7801
Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 520 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
封装: 6-TSSOP, SC-88, SOT-363
库存148,008
Logic Level Gate
20V
-
520 mOhm @ 600mA, 4.5V
900mV @ 250µA
1.8nC @ 4.5V
140pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
hot FDC6306P
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 1.9A SSOT6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A
  • Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: SuperSOT?-6
封装: SOT-23-6 Thin, TSOT-23-6
库存515,952
Logic Level Gate
20V
1.9A
170 mOhm @ 1.9A, 4.5V
1.5V @ 250µA
4.2nC @ 4.5V
441pF @ 10V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
SuperSOT?-6
DMN3013LFG-13
Diodes Incorporated

MOSFET 2N-CH 30V 9.5A PWRDI3333

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
  • Power - Max: 2.16W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PowerDI3333-8 (Type D)
封装: -
Request a Quote
-
30V
9.5A (Ta), 15A (Tc)
14.3mOhm @ 4A, 8V
1.2V @ 250µA
5.7nC @ 4.5V
600pF @ 15V
2.16W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
PowerDI3333-8 (Type D)
2N7002DWQ-13-F
Diodes Incorporated

MOSFET 2N-CH 60V 0.23A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 310mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封装: -
库存30,000
-
60V
230mA (Ta)
7.5Ohm @ 50mA, 5V
2V @ 250µA
-
50pF @ 25V
310mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
GSFK06002
Good-Ark Semiconductor

MOSFET 2N-CH 50V 0.3A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 300mA, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 580nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 30V
  • Power - Max: 900mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封装: -
库存17,334
-
50V
300mA (Ta)
2Ohm @ 300mA, 10V
1.4V @ 250µA
580nC @ 4.5V
12pF @ 30V
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
MCS8804-TP
Micro Commercial Co

MOSFET 2N-CH 20V 8A 8TSSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: -
Request a Quote
-
20V
8A
13mOhm @ 8A, 10V
1V @ 250µA
17.9nC @ 4.5V
1800pF @ 10V
-
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
NVMFD5C470NLWFT1G
onsemi

MOSFET 2N-CH 40V 11A/36A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
  • Power - Max: 3W (Ta), 24W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
封装: -
Request a Quote
-
40V
11A (Ta), 36A (Tc)
11.5mOhm @ 5A, 10V
2.2V @ 20µA
4nC @ 4.5V
590pF @ 25V
3W (Ta), 24W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
UPA2756GR-E1-A
Renesas

MOSFET 2N-CH 60V 4A 8PWRSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-PowerSOP
封装: -
Request a Quote
-
60V
4A (Ta)
105mOhm @ 2A, 10V
2.5V @ 1mA
6nC @ 10V
260pF @ 10V
2W (Ta)
150°C
Surface Mount
8-PowerSOIC (0.173", 4.40mm Width)
8-PowerSOP
SQ1922EEH-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 20V 0.84A SC70-6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
封装: -
库存35,856
-
20V
840mA (Tc)
350mOhm @ 400mA, 4.5V
1.5V @ 250µA
1.2nC @ 4.5V
50pF @ 10V
1.5W
-55°C ~ 175°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
SSM6L820R-LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V/20V 4A 6TSOPF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-TSOP-F
封装: -
库存17,625
-
30V, 20V
4A (Ta)
39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
1V @ 1mA, 1.2V @ 1mA
3.2nC @ 4.5V, 6.7nC @ 4.5V
310pF @ 15V, 480pF @ 10V
1.4W (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
6-TSOP-F
G130N06S2
Goford Semiconductor

MOSFET 2N-CH 60V 9A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V
  • Power - Max: 2.6W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: -
库存11,250
-
60V
9A (Tc)
15mOhm @ 10A, 10V
2.5V @ 250µA
67nC @ 10V
3021pF @ 30V
2.6W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SIZ350DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 18.5A 8PWR33

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V
  • Power - Max: 3.7W (Ta), 16.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-Power33 (3x3)
封装: -
库存22,497
-
30V
18.5A (Ta), 30A (Tc)
6.75mOhm @ 15A, 10V
2.4V @ 250µA
20.3nC @ 10V
940pF @ 15V
3.7W (Ta), 16.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power33 (3x3)
NXH010P120MNF1PTG
onsemi

SIC 2N-CH 1200V 114A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
  • Power - Max: 250W (Tj)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封装: -
Request a Quote
-
1200V (1.2kV)
114A (Tc)
14mOhm @ 100A, 20V
4.3V @ 40mA
454nC @ 20V
4707pF @ 800V
250W (Tj)
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-