页 8 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
PMDPB28UN,115	NXP	MOSFET 2N-CH 20V 4.6A HUSON6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V Power - Max: 510mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	封装: 6-UDFN Exposed Pad	库存5,904	Logic Level Gate	20V	4.6A	37 mOhm @ 4.6A, 4.5V	1V @ 250µA	4.7nC @ 4.5V	265pF @ 10V	510mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	DFN2020-6
AO4850	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 75V 2.3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存406,548	Logic Level Gate	75V	2.3A	130 mOhm @ 3.1A, 10V	3V @ 250µA	7nC @ 10V	380pF @ 30V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FW707-TL-E	ON Semiconductor	MOSFET 2P-CH 30V 8A 8SOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 26 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Power - Max: 2.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.173", 4.40mm Width)	库存6,948	Logic Level Gate	30V	8A	26 mOhm @ 8A, 10V	-	18nC @ 10V	900pF @ 10V	2.5W	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
SI7909DN-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 5.3A 1212-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	封装: PowerPAK? 1212-8 Dual	库存7,328	Logic Level Gate	12V	5.3A	37 mOhm @ 7.7A, 4.5V	1V @ 700µA	24nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI4923DY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 30V 6.2A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存63,852	Logic Level Gate	30V	6.2A	21 mOhm @ 8.3A, 10V	3V @ 250µA	70nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS3601	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V 1.3A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 480 mOhm @ 1.3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V Power - Max: 900mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存91,800	Logic Level Gate	100V	1.3A	480 mOhm @ 1.3A, 10V	4V @ 250µA	5nC @ 10V	153pF @ 50V	900mW	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTMFD4C87NT3G	ON Semiconductor	MOSFET 2N-CH 30V 8DFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6)	封装: 8-PowerTDFN	库存2,768	Standard	30V	11.7A, 14.9A	5.4 mOhm @ 30A, 10V	2.2V @ 250µA	22.2nC @ 10V	1252pF @ 15V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6)
FDMC007N30D	Fairchild/ON Semiconductor	PT8+ TECHNOLOGY 30V DUAL N-CHANN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 46A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-MLP (3x3)	封装: 8-PowerWDFN	库存7,376	Standard	30V	46A	-	3V @ 250µA	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-MLP (3x3)
APTM120H29FG	Microsemi Corporation	MOSFET 4N-CH 1200V 34A SP6 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 34A Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Power - Max: 780W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	封装: SP6	库存7,072	Standard	1200V (1.2kV)	34A	348 mOhm @ 17A, 10V	5V @ 5mA	374nC @ 10V	10300pF @ 25V	780W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM50H14FT3G	Microsemi Corporation	MOSFET 4N-CH 500V 26A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A Rds On (Max) @ Id, Vgs: 168 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V Power - Max: 208W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封装: SP3	库存7,376	Standard	500V	26A	168 mOhm @ 13A, 10V	5V @ 1mA	72nC @ 10V	3259pF @ 25V	208W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
AUIRF7342QTR	Infineon Technologies	MOSFET 2P-CH 55V 3.4A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,704	Logic Level Gate	55V	3.4A	105 mOhm @ 3.4A, 10V	3V @ 250µA	38nC @ 10V	690pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMD8560L	Fairchild/ON Semiconductor	MOSFET 2N-CH 46V 22A POWER FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A, 93A Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11130pF @ 30V Power - Max: 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power 5x6	封装: 8-PowerWDFN	库存5,984	Standard	60V	22A, 93A	3.2 mOhm @ 22A, 10V	3V @ 250µA	128nC @ 10V	11130pF @ 30V	2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power 5x6
DMT3020LFDB-7	Diodes Incorporated	MOSFET 2N-CHA 30V 7.7A DFN2020 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: 6-UDFN Exposed Pad	库存26,082	Standard	30V	7.7A	20 mOhm @ 9A, 10V	3V @ 250µA	7nC @ 10V	393pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SLA5074	Sanken	MOSFET 4N-CH 60V 5A 15-SIP FET Type: 4 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 4V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 4.8W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 15-SIP, Exposed Tab, Formed Leads Supplier Device Package: 15-SIP	封装: 15-SIP, Exposed Tab, Formed Leads	库存15,084	Logic Level Gate	60V	5A	300 mOhm @ 3A, 4V	2V @ 250µA	-	320pF @ 10V	4.8W	150°C (TJ)	Through Hole	15-SIP, Exposed Tab, Formed Leads	15-SIP
DMP4026LSD-13	Diodes Incorporated	MOSFET 2P-CH 40V 6.5A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2064pF @ 20V Power - Max: 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: -	Request a Quote	-	40V	6.5A (Ta)	25mOhm @ 3A, 10V	1.8V @ 250µA	45.8nC @ 10V	2064pF @ 20V	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN2024UVT-13	Diodes Incorporated	MOSFET 2N-CH 20V 7A TSOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-23-6	封装: -	Request a Quote	-	20V	7A (Ta)	24mOhm @ 6.5A, 4.5V	900mV @ 250µA	7.1nC @ 4.5V	647pF @ 10V	1W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-23-6
SH8M24GZETB	Rohm Semiconductor	MOSFET N/P-CH 45V 6A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存27,324	-	45V	6A (Ta)	46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V	2.5V @ 1mA	9.6nC @ 5V, 18.2nC @ 5V	550pF @ 10V, 1700pF @ 10V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
EMH2308-TL-E	onsemi	MOSFET 2P-CH 20V 3A 8EMH FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 1.2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-EMH	封装: -	Request a Quote	Logic Level Gate	20V	3A	85mOhm @ 3A, 4.5V	-	4nC @ 4.5V	320pF @ 10V	1.2W	-	Surface Mount	8-SMD, Flat Lead	8-EMH
SQJ500AEP-T1_BE3	Vishay Siliconix	MOSFET N/P-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38.3nC @ 10V, 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1843pF @ 20V, 1628pF @ 20V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8	封装: -	库存17,814	-	40V	30A (Tc)	9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V	2.3V @ 250µA, 2.5V @ 250µA	38.3nC @ 10V, 45nC @ 10V	1843pF @ 20V, 1628pF @ 20V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
UPA2752GR-E1-A	Renesas	MOSFET 2N-CH 30V 8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Power - Max: 1.7W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	-	30V	8A (Tc)	23mOhm @ 4A, 10V	2.5V @ 1mA	10nC @ 10V	480pF @ 10V	1.7W (Ta)	150°C	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
SP8K33TB1	Rohm Semiconductor	MOSFET 2N-CH 60V 8SOP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM170AM45CT1AG	Microchip Technology	SIC 2N-CH 1700V 64A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V Vgs(th) (Max) @ Id: 3.2V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V Power - Max: 319W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1700V (1.7kV)	64A (Tc)	45mOhm @ 30A, 20V	3.2V @ 2.5mA	178nC @ 20V	3300pF @ 1000V	319W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
FS10ASJ-3-T13-C02	Renesas Electronics Corporation	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FF3MR12KM1PHOSA1	Infineon Technologies	SIC 2N-CH 1200V 375A AG-62MM FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V Vgs(th) (Max) @ Id: 5.15V @ 168mA Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-62MM	封装: -	Request a Quote	-	1200V (1.2kV)	375A (Tc)	2.83mOhm @ 375A, 15V	5.15V @ 168mA	1000nC @ 15V	29800pF @ 25V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-62MM
MSCSM120AM31T1AG	Microchip Technology	SIC 2N-CH 1200V 89A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	89A (Tc)	31mOhm @ 40A, 20V	2.8V @ 3mA	232nC @ 20V	3020pF @ 1000V	395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
SSFP4806	Good-Ark Semiconductor	MOSFET 2N-CH 40V 30A 8PPAK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Power - Max: 46W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PPAK (5.1x5.71)	封装: -	库存9,000	-	40V	30A (Tc)	9mOhm @ 8A, 10V	2.5V @ 250µA	24nC @ 4.5V	2200pF @ 25V	46W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PPAK (5.1x5.71)
IRFH7911TR2PBF	Infineon Technologies	MOSFET 2N-CH 30V 13A/28A PQFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 28A Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V Power - Max: 2.4W, 3.4W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 18-PowerVQFN Supplier Device Package: PQFN (5x6)	封装: -	Request a Quote	Logic Level Gate	30V	13A, 28A	8.6mOhm @ 12A, 10V	2.35V @ 25µA	12nC @ 4.5V	1060pF @ 15V	2.4W, 3.4W	-	Surface Mount	18-PowerVQFN	PQFN (5x6)
SSM6L14FE-TE85L-F	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.8A ES6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V Power - Max: 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封装: -	库存52,236	Logic Level Gate, 1.5V Drive	20V	800mA (Ta), 720mA (Ta)	240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V	1V @ 1mA	2nC @ 4.5V, 1.76nC @ 4.5V	90pF @ 10V, 110pF @ 10V	150mW (Ta)	150°C	Surface Mount	SOT-563, SOT-666	ES6
MSCSM170AM15CT3AG	Microchip Technology	SIC 2N-CH 1700V 181A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 181A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V Vgs(th) (Max) @ Id: 3.2V @ 7.5mA Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V Power - Max: 862W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1700V (1.7kV)	181A (Tc)	15mOhm @ 90A, 20V	3.2V @ 7.5mA	534nC @ 20V	9900pF @ 1000V	862W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
BSC155N06NDATMA1	Infineon Technologies	MOSFET 2N-CH 60V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V Power - Max: 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	封装: -	库存21,720	-	60V	20A (Tc)	15.5mOhm @ 17A, 10V	4V @ 20µA	29nC @ 10V	2250pF @ 30V	50W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4

PMDPB28UN,115

NXP

MOSFET 2N-CH 20V 4.6A HUSON6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V
Power - Max: 510mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: DFN2020-6

封装: 6-UDFN Exposed Pad

库存5,904

Logic Level Gate

20V

4.6A

37 mOhm @ 4.6A, 4.5V

1V @ 250µA

4.7nC @ 4.5V

265pF @ 10V

510mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

DFN2020-6

AO4850

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 75V 2.3A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存406,548

Logic Level Gate

75V

2.3A

130 mOhm @ 3.1A, 10V

3V @ 250µA

7nC @ 10V

380pF @ 30V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

FW707-TL-E

ON Semiconductor

MOSFET 2P-CH 30V 8A 8SOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 26 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Power - Max: 2.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.173", 4.40mm Width)

库存6,948

Logic Level Gate

30V

8A

26 mOhm @ 8A, 10V

-

18nC @ 10V

900pF @ 10V

2.5W

150°C (TJ)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

SI7909DN-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 5.3A 1212-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

封装: PowerPAK? 1212-8 Dual

库存7,328

Logic Level Gate

12V

5.3A

37 mOhm @ 7.7A, 4.5V

1V @ 700µA

24nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI4923DY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 30V 6.2A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存63,852

Logic Level Gate

30V

6.2A

21 mOhm @ 8.3A, 10V

3V @ 250µA

70nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS3601

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 1.3A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 480 mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 153pF @ 50V
Power - Max: 900mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存91,800

Logic Level Gate

100V

1.3A

480 mOhm @ 1.3A, 10V

4V @ 250µA

5nC @ 10V

153pF @ 50V

900mW

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTMFD4C87NT3G

ON Semiconductor

MOSFET 2N-CH 30V 8DFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6)

封装: 8-PowerTDFN

库存2,768

Standard

30V

11.7A, 14.9A

5.4 mOhm @ 30A, 10V

2.2V @ 250µA

22.2nC @ 10V

1252pF @ 15V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6)

FDMC007N30D

Fairchild/ON Semiconductor

PT8+ TECHNOLOGY 30V DUAL N-CHANN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 46A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-MLP (3x3)

封装: 8-PowerWDFN

库存7,376

Standard

30V

46A

-

3V @ 250µA

-

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-MLP (3x3)

APTM120H29FG

Microsemi Corporation

MOSFET 4N-CH 1200V 34A SP6

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 34A
Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Power - Max: 780W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

封装: SP6

库存7,072

Standard

1200V (1.2kV)

34A

348 mOhm @ 17A, 10V

5V @ 5mA

374nC @ 10V

10300pF @ 25V

780W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM50H14FT3G

Microsemi Corporation

MOSFET 4N-CH 500V 26A SP3

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 26A
Rds On (Max) @ Id, Vgs: 168 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封装: SP3

库存7,376

Standard

500V

26A

168 mOhm @ 13A, 10V

5V @ 1mA

72nC @ 10V

3259pF @ 25V

208W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

AUIRF7342QTR

Infineon Technologies

MOSFET 2P-CH 55V 3.4A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,704

Logic Level Gate

55V

3.4A

105 mOhm @ 3.4A, 10V

3V @ 250µA

38nC @ 10V

690pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMD8560L

Fairchild/ON Semiconductor

MOSFET 2N-CH 46V 22A POWER

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 22A, 93A
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11130pF @ 30V
Power - Max: 2.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power 5x6

封装: 8-PowerWDFN

库存5,984

Standard

60V

22A, 93A

3.2 mOhm @ 22A, 10V

3V @ 250µA

128nC @ 10V

11130pF @ 30V

2.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power 5x6

DMT3020LFDB-7

Diodes Incorporated

MOSFET 2N-CHA 30V 7.7A DFN2020

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: 6-UDFN Exposed Pad

库存26,082

Standard

30V

7.7A

20 mOhm @ 9A, 10V

3V @ 250µA

7nC @ 10V

393pF @ 15V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

SLA5074

Sanken

MOSFET 4N-CH 60V 5A 15-SIP

FET Type: 4 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 4V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Power - Max: 4.8W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 15-SIP, Exposed Tab, Formed Leads
Supplier Device Package: 15-SIP

封装: 15-SIP, Exposed Tab, Formed Leads

库存15,084

Logic Level Gate

60V

5A

300 mOhm @ 3A, 4V

2V @ 250µA

-

320pF @ 10V

4.8W

150°C (TJ)

Through Hole

15-SIP, Exposed Tab, Formed Leads

15-SIP

DMP4026LSD-13

Diodes Incorporated

MOSFET 2P-CH 40V 6.5A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2064pF @ 20V
Power - Max: 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: -

Request a Quote

-

40V

6.5A (Ta)

25mOhm @ 3A, 10V

1.8V @ 250µA

45.8nC @ 10V

2064pF @ 20V

1.3W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN2024UVT-13

Diodes Incorporated

MOSFET 2N-CH 20V 7A TSOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-23-6

封装: -

Request a Quote

-

20V

7A (Ta)

24mOhm @ 6.5A, 4.5V

900mV @ 250µA

7.1nC @ 4.5V

647pF @ 10V

1W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-23-6

SH8M24GZETB

Rohm Semiconductor

MOSFET N/P-CH 45V 6A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V, 18.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V, 1700pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存27,324

-

45V

6A (Ta)

46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V

2.5V @ 1mA

9.6nC @ 5V, 18.2nC @ 5V

550pF @ 10V, 1700pF @ 10V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

EMH2308-TL-E

onsemi

MOSFET 2P-CH 20V 3A 8EMH

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Power - Max: 1.2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-EMH

封装: -

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Logic Level Gate

20V

3A

85mOhm @ 3A, 4.5V

-

4nC @ 4.5V

320pF @ 10V

1.2W

-

Surface Mount

8-SMD, Flat Lead

8-EMH

SQJ500AEP-T1_BE3

Vishay Siliconix

MOSFET N/P-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38.3nC @ 10V, 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1843pF @ 20V, 1628pF @ 20V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8

封装: -

库存17,814

-

40V

30A (Tc)

9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V

2.3V @ 250µA, 2.5V @ 250µA

38.3nC @ 10V, 45nC @ 10V

1843pF @ 20V, 1628pF @ 20V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8

UPA2752GR-E1-A

Renesas

MOSFET 2N-CH 30V 8A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Power - Max: 1.7W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

封装: -

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-

30V

8A (Tc)

23mOhm @ 4A, 10V

2.5V @ 1mA

10nC @ 10V

480pF @ 10V

1.7W (Ta)

150°C

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

SP8K33TB1

Rohm Semiconductor

MOSFET 2N-CH 60V 8SOP

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

MSCSM170AM45CT1AG

Microchip Technology

SIC 2N-CH 1700V 64A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V
Power - Max: 319W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

Request a Quote

-

1700V (1.7kV)

64A (Tc)

45mOhm @ 30A, 20V

3.2V @ 2.5mA

178nC @ 20V

3300pF @ 1000V

319W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

FS10ASJ-3-T13-C02

Renesas Electronics Corporation

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

FF3MR12KM1PHOSA1

Infineon Technologies

SIC 2N-CH 1200V 375A AG-62MM

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V
Vgs(th) (Max) @ Id: 5.15V @ 168mA
Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-62MM

封装: -

Request a Quote

-

1200V (1.2kV)

375A (Tc)

2.83mOhm @ 375A, 15V

5.15V @ 168mA

1000nC @ 15V

29800pF @ 25V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-62MM

MSCSM120AM31T1AG

Microchip Technology

SIC 2N-CH 1200V 89A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 395W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

Request a Quote

-

1200V (1.2kV)

89A (Tc)

31mOhm @ 40A, 20V

2.8V @ 3mA

232nC @ 20V

3020pF @ 1000V

395W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

SSFP4806

Good-Ark Semiconductor

MOSFET 2N-CH 40V 30A 8PPAK

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Power - Max: 46W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PPAK (5.1x5.71)

封装: -

库存9,000

-

40V

30A (Tc)

9mOhm @ 8A, 10V

2.5V @ 250µA

24nC @ 4.5V

2200pF @ 25V

46W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-PPAK (5.1x5.71)

IRFH7911TR2PBF

Infineon Technologies

MOSFET 2N-CH 30V 13A/28A PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 28A
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V
Power - Max: 2.4W, 3.4W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 18-PowerVQFN
Supplier Device Package: PQFN (5x6)

封装: -

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Logic Level Gate

30V

13A, 28A

8.6mOhm @ 12A, 10V

2.35V @ 25µA

12nC @ 4.5V

1060pF @ 15V

2.4W, 3.4W

-

Surface Mount

18-PowerVQFN

PQFN (5x6)

SSM6L14FE-TE85L-F

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A ES6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V
Power - Max: 150mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封装: -

库存52,236

Logic Level Gate, 1.5V Drive

20V

800mA (Ta), 720mA (Ta)

240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V

1V @ 1mA

2nC @ 4.5V, 1.76nC @ 4.5V

90pF @ 10V, 110pF @ 10V

150mW (Ta)

150°C

Surface Mount

SOT-563, SOT-666

ES6

MSCSM170AM15CT3AG

Microchip Technology

SIC 2N-CH 1700V 181A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
Power - Max: 862W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

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-

1700V (1.7kV)

181A (Tc)

15mOhm @ 90A, 20V

3.2V @ 7.5mA

534nC @ 20V

9900pF @ 1000V

862W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

BSC155N06NDATMA1

Infineon Technologies

MOSFET 2N-CH 60V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
Power - Max: 50W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

封装: -

库存21,720

-

60V

20A (Tc)

15.5mOhm @ 17A, 10V

4V @ 20µA

29nC @ 10V

2250pF @ 30V

50W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4