页 5 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSO4804HUMA2	Infineon Technologies	DIODE ARRAY 2N-CH 30V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	封装: 8-SOIC (0.154", 3.90mm Width)	库存2,480	Logic Level Gate	30V	8A (Ta)	20 mOhm @ 8A, 10V	2V @ 30µA	17nC @ 5V	870pF @ 25V	2W	-55°C ~ 150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
IRF7750TRPBF	Infineon Technologies	MOSFET 2P-CH 20V 4.7A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存6,576	Logic Level Gate	20V	4.7A	30 mOhm @ 4.7A, 4.5V	1.2V @ 250µA	39nC @ 5V	1700pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
FDC6301N_G	Fairchild/ON Semiconductor	MOSFET 2N-CH SSOT6 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,464	-	-	-	-	-	-	-	-	-	-	-	-
AO4812L	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 6A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,904	Standard	30V	6A	30 mOhm @ 6A, 10V	2.4V @ 250µA	6.3nC @ 10V	310pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FW274-TL-E	ON Semiconductor	MOSFET 2N-CH 30V 6A 8SOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 37 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V Power - Max: 2.2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.173", 4.40mm Width)	库存488,544	Logic Level Gate	30V	6A	37 mOhm @ 6A, 10V	2.6V @ 1mA	9.1nC @ 10V	490pF @ 10V	2.2W	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
SI7901EDN-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 4.3A 1212-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	封装: PowerPAK? 1212-8 Dual	库存110,400	Logic Level Gate	20V	4.3A	48 mOhm @ 6.3A, 4.5V	1V @ 800µA	18nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI5905DC-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 8V 3A 1206-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封装: 8-SMD, Flat Lead	库存3,440	Logic Level Gate	8V	3A	90 mOhm @ 3A, 4.5V	450mV @ 250µA (Min)	9nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
AO8803	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 12V 7A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 6V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存61,356	Logic Level Gate	12V	-	18 mOhm @ 7A, 4.5V	1V @ 250µA	44nC @ 4.5V	4750pF @ 6V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
BSZ215CHXTMA1	Infineon Technologies	MOSFET N/P-CH 20V 8TDSON FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TSDSON-8-FL	封装: 8-PowerTDFN	库存4,944	Logic Level Gate, 2.5V Drive	20V	5.1A, 3.2A	55 mOhm @ 5.1A, 4.5V	1.4V @ 110µA	2.8nC @ 4.5V	419pF @ 10V	2.5W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PG-TSDSON-8-FL
VMM90-09P	IXYS	MOSFET 2N-CH 900V 85A Y3-LI FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,288	-	-	-	-	-	-	-	-	-	-	-	-
APTM50HM65FTG	Microsemi Corporation	MOSFET 4N-CH 500V 51A SP4 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	封装: SP4	库存7,728	Standard	500V	51A	78 mOhm @ 25.5A, 10V	5V @ 2.5mA	140nC @ 10V	7000pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTC60DDAM70T1G	Microsemi Corporation	MOSFET 2N-CH 600V 39A SP1 FET Type: 2 N Channel (Dual Buck Chopper) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	封装: SP1	库存3,856	Logic Level Gate	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	7000pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
ALD110908PAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8DIP FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V Vgs(th) (Max) @ Id: 820mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存5,744	Standard	10.6V	12mA, 3mA	500 Ohm @ 4.8V	820mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
NVMFD5875NLWFT3G	ON Semiconductor	MOSFET 2N-CH 60V 7A SO8FL FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Power - Max: 3.2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)	封装: 8-PowerTDFN	库存2,800	Logic Level Gate	60V	7A	33 mOhm @ 7.5A, 10V	3V @ 250µA	20nC @ 10V	540pF @ 25V	3.2W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
FW4604-TL-2W	ON Semiconductor	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A Rds On (Max) @ Id, Vgs: 39 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V Power - Max: 1.8W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,696	Logic Level Gate, 4.5V Drive	30V	6A, 4.5A	39 mOhm @ 6A, 10V	-	9.1nC @ 10V	490pF @ 10V	1.8W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMT3020LFDB-13	Diodes Incorporated	MOSFET 2N-CHA 30V 7.7A DFN2020 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: 6-UDFN Exposed Pad	库存5,392	Standard	30V	7.7A (Ta)	20 mOhm @ 9A, 10V	3V @ 250µA	7nC @ 10V	393pF @ 15V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SSM6P36FE,LM	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.33A ES6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 330mA Rds On (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	封装: SOT-563, SOT-666	库存2,400	Logic Level Gate	20V	330mA	1.31 Ohm @ 100mA, 4.5V	1V @ 1mA	1.2nC @ 4V	43pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
FDMS7700S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 12A/22A POWER56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 22A Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	封装: 8-PowerWDFN	库存39,252	Logic Level Gate	30V	12A, 22A	7.5 mOhm @ 12A, 10V	3V @ 250µA	28nC @ 10V	1750pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
IRF7329PBF	Infineon Technologies	MOSFET 2P-CH 12V 9.2A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.2A Rds On (Max) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存29,730	Logic Level Gate	12V	9.2A	17 mOhm @ 9.2A, 4.5V	900mV @ 250µA	57nC @ 4.5V	3450pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SH8K25GZ0TB1	Rohm Semiconductor	MOSFET 2N-CH 40V 5.2A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存52,380	-	40V	5.2A (Ta)	85mOhm @ 5.2A, 10V	2.5V @ 1mA	1.7nC @ 5V	100pF @ 10V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMNH6021SPDWQ-13	Diodes Incorporated	MOSFET 2N-CH 60V 8.2A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 32A(Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V Power - Max: 1.5W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type R)	封装: -	Request a Quote	-	60V	8.2A (Ta), 32A(Tc)	25mOhm @ 15A, 10V	3V @ 250µA	20.1nC @ 10V	1143pF @ 25V	1.5W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerTDFN	PowerDI5060-8 (Type R)
EFC2K102NUZTDG	onsemi	MOSFET 2N-CH 12V 33A 10WLCSP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-WLCSP (2.98x1.49)	封装: -	库存14,685	Logic Level Gate, 2.5V Drive	12V	33A (Ta)	2.65mOhm @ 5A, 4.5V	1.3V @ 1mA	42nC @ 3.8V	-	3.1W (Ta)	150°C (TJ)	Surface Mount	10-SMD, No Lead	10-WLCSP (2.98x1.49)
DMT10H032LDV-13	Diodes Incorporated	MOSFET 2N-CH 100V 18A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V Power - Max: 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	封装: -	Request a Quote	-	100V	18A (Tc)	36mOhm @ 10A, 10V	2.5V @ 250µA	11.9nC @ 10V	683pF @ 50V	1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
SH8ME5TB1	Rohm Semiconductor	MOSFET 100V 4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V, 91mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V, 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V, 2100pF @ 50V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存7,254	-	100V	4.5A (Ta)	58mOhm @ 4.5A, 10V, 91mOhm @ 4.5A, 10V	2.5V @ 1mA	6.7nC @ 10V, 52nC @ 10V	305pF @ 50V, 2100pF @ 50V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN5L06VK-7A	Diodes Incorporated	MOSFET 2N-CH 50V 0.28A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	Request a Quote	-	50V	280mA (Ta)	2Ohm @ 50mA, 5V	1.2V @ 250µA	-	50pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
MCB30P1200LB-TRR	IXYS	SIC 2N-CH 1200V 9SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	封装: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Surface Mount	9-PowerSMD	9-SMPD-B
AONX38168	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 25V 25A/62A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN (5x6)	封装: -	库存3,648	-	25V	25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)	3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V	1.9V @ 250µA, 1.8V @ 250µA	24nC @ 10V, 85nC @ 10V	1150pF @ 12.5V, 4520pF @ 12.5V	3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN (5x6)
DMP2900UVQ-7	Diodes Incorporated	MOSFET 2P-CH 20V 0.85A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 850mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	库存5,565	-	20V	850mA (Ta)	750mOhm @ 430mA, 4.5V	1V @ 250µA	0.7nC @ 4.5V	49pF @ 16V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NDS9957	onsemi	MOSFET 2N-CH 60V 2.6A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 160mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 30V Power - Max: 900mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	Logic Level Gate	60V	2.6A	160mOhm @ 2.6A, 10V	3V @ 250µA	12nC @ 10V	200pF @ 30V	900mW	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMN2053UFDBQ-13	Diodes Incorporated	MOSFET 2N-CH 20V 4.6A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Power - Max: 820mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: -	Request a Quote	-	20V	4.6A (Ta)	35mOhm @ 5A, 4.5V	1V @ 250µA	7.7nC @ 10V	369pF @ 10V	820mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)

BSO4804HUMA2

Infineon Technologies

DIODE ARRAY 2N-CH 30V 8A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

封装: 8-SOIC (0.154", 3.90mm Width)

库存2,480

Logic Level Gate

30V

8A (Ta)

20 mOhm @ 8A, 10V

2V @ 30µA

17nC @ 5V

870pF @ 25V

2W

-55°C ~ 150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

IRF7750TRPBF

Infineon Technologies

MOSFET 2P-CH 20V 4.7A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存6,576

Logic Level Gate

20V

4.7A

30 mOhm @ 4.7A, 4.5V

1.2V @ 250µA

39nC @ 5V

1700pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

FDC6301N_G

Fairchild/ON Semiconductor

MOSFET 2N-CH SSOT6

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,464

-

AO4812L

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 6A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,904

Standard

30V

6A

30 mOhm @ 6A, 10V

2.4V @ 250µA

6.3nC @ 10V

310pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FW274-TL-E

ON Semiconductor

MOSFET 2N-CH 30V 6A 8SOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 37 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V
Power - Max: 2.2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.173", 4.40mm Width)

库存488,544

Logic Level Gate

30V

6A

37 mOhm @ 6A, 10V

2.6V @ 1mA

9.1nC @ 10V

490pF @ 10V

2.2W

150°C (TJ)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

SI7901EDN-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 4.3A 1212-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 800µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

封装: PowerPAK? 1212-8 Dual

库存110,400

Logic Level Gate

20V

4.3A

48 mOhm @ 6.3A, 4.5V

1V @ 800µA

18nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI5905DC-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 8V 3A 1206-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封装: 8-SMD, Flat Lead

库存3,440

Logic Level Gate

8V

3A

90 mOhm @ 3A, 4.5V

450mV @ 250µA (Min)

9nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

AO8803

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 12V 7A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 6V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存61,356

Logic Level Gate

12V

-

18 mOhm @ 7A, 4.5V

1V @ 250µA

44nC @ 4.5V

4750pF @ 6V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

BSZ215CHXTMA1

Infineon Technologies

MOSFET N/P-CH 20V 8TDSON

FET Type: N and P-Channel Complementary
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8-FL

封装: 8-PowerTDFN

库存4,944

Logic Level Gate, 2.5V Drive

20V

5.1A, 3.2A

55 mOhm @ 5.1A, 4.5V

1.4V @ 110µA

2.8nC @ 4.5V

419pF @ 10V

2.5W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PG-TSDSON-8-FL

VMM90-09P

IXYS

MOSFET 2N-CH 900V 85A Y3-LI

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,288

-

APTM50HM65FTG

Microsemi Corporation

MOSFET 4N-CH 500V 51A SP4

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

封装: SP4

库存7,728

Standard

500V

51A

78 mOhm @ 25.5A, 10V

5V @ 2.5mA

140nC @ 10V

7000pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTC60DDAM70T1G

Microsemi Corporation

MOSFET 2N-CH 600V 39A SP1

FET Type: 2 N Channel (Dual Buck Chopper)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

封装: SP1

库存3,856

Logic Level Gate

600V

39A

70 mOhm @ 39A, 10V

3.9V @ 2.7mA

259nC @ 10V

7000pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

ALD110908PAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存5,744

Standard

10.6V

12mA, 3mA

500 Ohm @ 4.8V

820mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

NVMFD5875NLWFT3G

ON Semiconductor

MOSFET 2N-CH 60V 7A SO8FL

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 33 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

封装: 8-PowerTDFN

库存2,800

Logic Level Gate

60V

7A

33 mOhm @ 7.5A, 10V

3V @ 250µA

20nC @ 10V

540pF @ 25V

3.2W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

FW4604-TL-2W

ON Semiconductor

MOSFET N/P-CH 30V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V
Power - Max: 1.8W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,696

Logic Level Gate, 4.5V Drive

30V

6A, 4.5A

39 mOhm @ 6A, 10V

-

9.1nC @ 10V

490pF @ 10V

1.8W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMT3020LFDB-13

Diodes Incorporated

MOSFET 2N-CHA 30V 7.7A DFN2020

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: 6-UDFN Exposed Pad

库存5,392

Standard

30V

7.7A (Ta)

20 mOhm @ 9A, 10V

3V @ 250µA

7nC @ 10V

393pF @ 15V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

SSM6P36FE,LM

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.33A ES6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 330mA
Rds On (Max) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

封装: SOT-563, SOT-666

库存2,400

Logic Level Gate

20V

330mA

1.31 Ohm @ 100mA, 4.5V

1V @ 1mA

1.2nC @ 4V

43pF @ 10V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6 (1.6x1.6)

FDMS7700S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/22A POWER56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 22A
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

封装: 8-PowerWDFN

库存39,252

Logic Level Gate

30V

12A, 22A

7.5 mOhm @ 12A, 10V

3V @ 250µA

28nC @ 10V

1750pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

IRF7329PBF

Infineon Technologies

MOSFET 2P-CH 12V 9.2A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存29,730

Logic Level Gate

12V

9.2A

17 mOhm @ 9.2A, 4.5V

900mV @ 250µA

57nC @ 4.5V

3450pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SH8K25GZ0TB1

Rohm Semiconductor

MOSFET 2N-CH 40V 5.2A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存52,380

-

40V

5.2A (Ta)

85mOhm @ 5.2A, 10V

2.5V @ 1mA

1.7nC @ 5V

100pF @ 10V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMNH6021SPDWQ-13

Diodes Incorporated

MOSFET 2N-CH 60V 8.2A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 32A(Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V
Power - Max: 1.5W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type R)

封装: -

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-

60V

8.2A (Ta), 32A(Tc)

25mOhm @ 15A, 10V

3V @ 250µA

20.1nC @ 10V

1143pF @ 25V

1.5W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerTDFN

PowerDI5060-8 (Type R)

EFC2K102NUZTDG

onsemi

MOSFET 2N-CH 12V 33A 10WLCSP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-WLCSP (2.98x1.49)

封装: -

库存14,685

Logic Level Gate, 2.5V Drive

12V

33A (Ta)

2.65mOhm @ 5A, 4.5V

1.3V @ 1mA

42nC @ 3.8V

-

3.1W (Ta)

150°C (TJ)

Surface Mount

10-SMD, No Lead

10-WLCSP (2.98x1.49)

DMT10H032LDV-13

Diodes Incorporated

MOSFET 2N-CH 100V 18A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Power - Max: 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

封装: -

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-

100V

18A (Tc)

36mOhm @ 10A, 10V

2.5V @ 250µA

11.9nC @ 10V

683pF @ 50V

1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)

SH8ME5TB1

Rohm Semiconductor

MOSFET 100V 4.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.5A, 10V, 91mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V, 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V, 2100pF @ 50V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存7,254

-

100V

4.5A (Ta)

58mOhm @ 4.5A, 10V, 91mOhm @ 4.5A, 10V

2.5V @ 1mA

6.7nC @ 10V, 52nC @ 10V

305pF @ 50V, 2100pF @ 50V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN5L06VK-7A

Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

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-

50V

280mA (Ta)

2Ohm @ 50mA, 5V

1.2V @ 250µA

-

50pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

MCB30P1200LB-TRR

IXYS

SIC 2N-CH 1200V 9SMPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-SMPD-B

封装: -

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-

1200V (1.2kV)

-

Surface Mount

9-PowerSMD

9-SMPD-B

AONX38168

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 25V 25A/62A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA, 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 12.5V, 4520pF @ 12.5V
Power - Max: 3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN (5x6)

封装: -

库存3,648

-

25V

25A (Ta), 62A (Tc), 50A (Ta), 85A (Tc)

3.3mOhm @ 20A, 10V, 0.8mOhm @ 20A, 10V

1.9V @ 250µA, 1.8V @ 250µA

24nC @ 10V, 85nC @ 10V

1150pF @ 12.5V, 4520pF @ 12.5V

3.1W (Ta), 20W (Tc), 3.2W (Ta), 69W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-DFN (5x6)

DMP2900UVQ-7

Diodes Incorporated

MOSFET 2P-CH 20V 0.85A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

库存5,565

-

20V

850mA (Ta)

750mOhm @ 430mA, 4.5V

1V @ 250µA

0.7nC @ 4.5V

49pF @ 16V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NDS9957

onsemi

MOSFET 2N-CH 60V 2.6A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 30V
Power - Max: 900mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

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Logic Level Gate

60V

2.6A

160mOhm @ 2.6A, 10V

3V @ 250µA

12nC @ 10V

200pF @ 30V

900mW

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMN2053UFDBQ-13

Diodes Incorporated

MOSFET 2N-CH 20V 4.6A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
Power - Max: 820mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: -

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-

20V

4.6A (Ta)

35mOhm @ 5A, 4.5V

1V @ 250µA

7.7nC @ 10V

369pF @ 10V

820mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)