页 67 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7335D1TR	Infineon Technologies	MOSFET 2N-CH 30V 10A 14-SOIC FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	封装: 14-SOIC (0.154", 3.90mm Width)	库存7,552	Logic Level Gate	30V	10A	17.5 mOhm @ 10A, 4.5V	1V @ 250µA	20nC @ 4.5V	1500pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
APTM100VDA35T3G	Microsemi Corporation	MOSFET 2N-CH 1000V 22A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封装: SP3	库存5,920	Standard	1000V (1kV)	22A	420 mOhm @ 11A, 10V	5V @ 2.5mA	186nC @ 10V	5200pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
AON6918	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 25V 15A/26.5A 8DFN FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15A, 26.5A Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V Power - Max: 2W, 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN-EP (5x6)	封装: 8-WDFN Exposed Pad	库存36,000	Logic Level Gate	25V	15A, 26.5A	5.2 mOhm @ 20A, 10V	2.3V @ 250µA	21nC @ 10V	1560pF @ 15V	2W, 2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN-EP (5x6)
SI7964DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 6.1A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.1A Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存8,964	Standard	60V	6.1A	23 mOhm @ 9.6A, 10V	4.5V @ 250µA	65nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI4965DY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 8V 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存274,908	Logic Level Gate	8V	-	21 mOhm @ 8A, 4.5V	450mV @ 250µA (Min)	55nC @ 4.5V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
TPCP8203(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2N-CH 40V 4.7A PS-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.7A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 360mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: PS-8 (2.9x2.4)	封装: 8-SMD, Flat Lead	库存4,896	Standard	40V	4.7A	-	2.5V @ 1mA	-	-	360mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	PS-8 (2.9x2.4)
APTC60AM70T1G	Microsemi Corporation	MOSFET 2N-CH 600V 39A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	封装: SP1	库存3,328	Standard	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	7000pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
AOP605	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 8DIP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 28 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存10,380	Logic Level Gate	30V	-	28 mOhm @ 7.5A, 10V	3V @ 250µA	16.6nC @ 4.5V	820pF @ 15V	2.5W	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
AON5802A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 7.2A 6-DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.2A Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1115pF @ 15V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Lead Exposed Pad Supplier Device Package: 6-DFN-EP (2x5)	封装: 6-SMD, Flat Lead Exposed Pad	库存231,312	Logic Level Gate	30V	7.2A	20 mOhm @ 7.2A, 4.5V	1.5V @ 250µA	10.7nC @ 4.5V	1115pF @ 15V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, Flat Lead Exposed Pad	6-DFN-EP (2x5)
FDW2508P	Fairchild/ON Semiconductor	MOSFET 2P-CH 12V 6A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2644pF @ 6V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存302,952	Logic Level Gate	12V	6A	18 mOhm @ 6A, 4.5V	1.5V @ 250µA	36nC @ 4.5V	2644pF @ 6V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
STC5DNF30V	STMicroelectronics	MOSFET 2N-CH 30V 4.5A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 35 mOhm @ 2.3A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存128,556	Logic Level Gate	30V	4.5A	35 mOhm @ 2.3A, 4.5V	600mV @ 250µA	11.5nC @ 4.5V	460pF @ 25V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
APTSM120AM14CD3AG	Microsemi Corporation	POWER MODULE - SIC FET Type: 2 N-Channel (Dual), Schottky FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V Vgs(th) (Max) @ Id: 3V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V Power - Max: 2140W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: Module	库存7,584	Silicon Carbide (SiC)	1200V (1.2kV)	337A (Tc)	11 mOhm @ 180A, 20V	3V @ 9mA	1224nC @ 20V	23000pF @ 1000V	2140W	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module
APTM120A20SG	Microsemi Corporation	MOSFET 2N-CH 1200V 50A SP6 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 240 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	封装: SP6	库存5,136	Standard	1200V (1.2kV)	50A	240 mOhm @ 25A, 10V	5V @ 6mA	600nC @ 10V	15200pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
GWM180-004X2-SL	IXYS	MOSFET 6N-CH 40V 180A 17-SMD FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Flat Leads Supplier Device Package: ISOPLUS-DIL?	封装: 17-SMD, Flat Leads	库存7,712	Standard	40V	180A	2.5 mOhm @ 100A, 10V	4.5V @ 1mA	110nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Flat Leads	ISOPLUS-DIL?
GMM3X160-0055X2-SMD	IXYS	MOSFET 6N-CH 55V 150A 24-SMD FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SMD, Gull Wing Supplier Device Package: 24-SMD	封装: 24-SMD, Gull Wing	库存5,632	Standard	55V	150A	-	4V @ 1mA	110nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	24-SMD, Gull Wing	24-SMD
ALD1102BPAL	Advanced Linear Devices Inc.	MOSFET 2P-CH 10.6V 8DIP FET Type: 2 P-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V Vgs(th) (Max) @ Id: 1.2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存5,008	Standard	10.6V	-	270 Ohm @ 5V	1.2V @ 10µA	-	10pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
NTLLD4951NFTWG	ON Semiconductor	MOSFET 2N-CH 30V 5.5A/6.3A WDFN8 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A Rds On (Max) @ Id, Vgs: 17.4 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V Power - Max: 800mW, 810mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-WDFN (3x3)	封装: 8-PowerWDFN	库存2,848	Standard	30V	5.5A, 6.3A	17.4 mOhm @ 9A, 10V	2.2V @ 250µA	12nC @ 10V	605pF @ 15V	800mW, 810mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-WDFN (3x3)
SH8K2TB1	Rohm Semiconductor	MOSFET 2N-CH 30V 6A SOP8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Supplier Device Package: 8-SOP (5.0x6.0)	封装: 8-SMD, Gull Wing	库存46,224	Logic Level Gate	30V	6A	30 mOhm @ 6A, 10V	2.5V @ 1mA	10.1nC @ 5V	520pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SMD, Gull Wing	8-SOP (5.0x6.0)
SI4532ADY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 3.7A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.13W, 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,968	Logic Level Gate	30V	3.7A, 3A	53 mOhm @ 4.9A, 10V	1V @ 250µA	16nC @ 10V	-	1.13W, 1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
CSD87333Q3D	Texas Instruments	MOSFET 2N-CH 30V 15A 8SON FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 14.3 mOhm @ 4A, 8V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 15V Power - Max: 6W Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	封装: 8-PowerTDFN	库存6,304	Logic Level Gate, 5V Drive	30V	15A	14.3 mOhm @ 4A, 8V	1.2V @ 250µA	4.6nC @ 4.5V	662pF @ 15V	6W	125°C (TJ)	Surface Mount	8-PowerTDFN	8-VSON (3.3x3.3)
ALD310702SCL	Advanced Linear Devices Inc.	QUAD P-CHANNEL EPAD MATCHED PAIR FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 180mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封装: 16-SOIC (0.154", 3.90mm Width)	库存5,968	Standard	8V	-	-	180mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
FDS8978	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 7.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存137,412	Logic Level Gate	30V	7.5A	18 mOhm @ 7.5A, 10V	2.5V @ 250µA	26nC @ 10V	1270pF @ 15V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTZD3155CT1G	ON Semiconductor	MOSFET N/P-CH 20V SOT-563 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: SOT-563, SOT-666	库存9,856,656	Logic Level Gate	20V	540mA, 430mA	550 mOhm @ 540mA, 4.5V	1V @ 250µA	2.5nC @ 4.5V	150pF @ 16V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
QH8JE5TCR	Rohm Semiconductor	-100V DUAL PCH+PCH, TSMT8, POWER FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 270mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 50V Power - Max: 1.1W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	封装: -	Request a Quote	-	100V	2A (Ta)	270mOhm @ 2A, 10V	2.5V @ 1mA	19.7nC @ 10V	590pF @ 50V	1.1W (Ta)	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
DMN62D2UDW-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	Request a Quote	-	60V	340mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SH8M31GZETB	Rohm Semiconductor	MOSFET N/P-CH 60V 4.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V, 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V, 2500pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存7,398	-	60V	4.5A (Ta)	65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V	3V @ 1mA	7nC @ 5V, 40nC @ 10V	500pF @ 10V, 2500pF @ 10V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IRFN214BTA	Fairchild Semiconductor	MOSFET N-CH 250V FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM120AM03CT6LIAG	Microchip Technology	SIC 2N-CH 1200V 805A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 805A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V Vgs(th) (Max) @ Id: 2.8V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1kV Power - Max: 3.215kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	封装: -	库存6	-	1200V (1.2kV)	805A (Tc)	3.1mOhm @ 400A, 20V	2.8V @ 10mA	2320nC @ 20V	30200pF @ 1kV	3.215kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C LI
SSFK9120	Good-Ark Semiconductor	MOSFET N/P-CH 20V 0.8A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V Power - Max: 275mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	库存17,850	-	20V	800mA (Tc), 400mA (Tc)	300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V	1V @ 250µA	2nC @ 4.5V	75pF @ 10V, 78pF @ 10V	275mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
CCB016M12GM3T	Wolfspeed, Inc.	SIC MODULE 1200V FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V Vgs(th) (Max) @ Id: 3.9V @ 23mA Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V Power - Max: 10mW Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	库存153	-	1200V (1.2kV)	50A (Tj)	20.8mOhm @ 50A, 15V	3.9V @ 23mA	236nC @ 15V	6700pF @ 1000V	10mW	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module

IRF7335D1TR

Infineon Technologies

MOSFET 2N-CH 30V 10A 14-SOIC

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

封装: 14-SOIC (0.154", 3.90mm Width)

库存7,552

Logic Level Gate

30V

10A

17.5 mOhm @ 10A, 4.5V

1V @ 250µA

20nC @ 4.5V

1500pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SOIC

APTM100VDA35T3G

Microsemi Corporation

MOSFET 2N-CH 1000V 22A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封装: SP3

库存5,920

Standard

1000V (1kV)

22A

420 mOhm @ 11A, 10V

5V @ 2.5mA

186nC @ 10V

5200pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

AON6918

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 25V 15A/26.5A 8DFN

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15A, 26.5A
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V
Power - Max: 2W, 2.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN-EP (5x6)

封装: 8-WDFN Exposed Pad

库存36,000

Logic Level Gate

25V

15A, 26.5A

5.2 mOhm @ 20A, 10V

2.3V @ 250µA

21nC @ 10V

1560pF @ 15V

2W, 2.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-DFN-EP (5x6)

SI7964DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 6.1A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.1A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存8,964

Standard

60V

6.1A

23 mOhm @ 9.6A, 10V

4.5V @ 250µA

65nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI4965DY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 8V 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存274,908

Logic Level Gate

8V

-

21 mOhm @ 8A, 4.5V

450mV @ 250µA (Min)

55nC @ 4.5V

-

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

TPCP8203(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET 2N-CH 40V 4.7A PS-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 360mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: PS-8 (2.9x2.4)

封装: 8-SMD, Flat Lead

库存4,896

Standard

40V

4.7A

-

2.5V @ 1mA

-

360mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

PS-8 (2.9x2.4)

APTC60AM70T1G

Microsemi Corporation

MOSFET 2N-CH 600V 39A SP1

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

封装: SP1

库存3,328

Standard

600V

39A

70 mOhm @ 39A, 10V

3.9V @ 2.7mA

259nC @ 10V

7000pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

AOP605

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8DIP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 28 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存10,380

Logic Level Gate

30V

-

28 mOhm @ 7.5A, 10V

3V @ 250µA

16.6nC @ 4.5V

820pF @ 15V

2.5W

-55°C ~ 150°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

AON5802A

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 7.2A 6-DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.2A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1115pF @ 15V
Power - Max: 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Lead Exposed Pad
Supplier Device Package: 6-DFN-EP (2x5)

封装: 6-SMD, Flat Lead Exposed Pad

库存231,312

Logic Level Gate

30V

7.2A

20 mOhm @ 7.2A, 4.5V

1.5V @ 250µA

10.7nC @ 4.5V

1115pF @ 15V

1.7W

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, Flat Lead Exposed Pad

6-DFN-EP (2x5)

FDW2508P

Fairchild/ON Semiconductor

MOSFET 2P-CH 12V 6A 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2644pF @ 6V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存302,952

Logic Level Gate

12V

6A

18 mOhm @ 6A, 4.5V

1.5V @ 250µA

36nC @ 4.5V

2644pF @ 6V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

STC5DNF30V

STMicroelectronics

MOSFET 2N-CH 30V 4.5A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 2.3A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存128,556

Logic Level Gate

30V

4.5A

35 mOhm @ 2.3A, 4.5V

600mV @ 250µA

11.5nC @ 4.5V

460pF @ 25V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

APTSM120AM14CD3AG

Microsemi Corporation

POWER MODULE - SIC

FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Rds On (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V
Vgs(th) (Max) @ Id: 3V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V
Power - Max: 2140W
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: Module

库存7,584

Silicon Carbide (SiC)

1200V (1.2kV)

337A (Tc)

11 mOhm @ 180A, 20V

3V @ 9mA

1224nC @ 20V

23000pF @ 1000V

2140W

-40°C ~ 175°C (TJ)

Chassis Mount

Module

APTM120A20SG

Microsemi Corporation

MOSFET 2N-CH 1200V 50A SP6

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 240 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

封装: SP6

库存5,136

Standard

1200V (1.2kV)

50A

240 mOhm @ 25A, 10V

5V @ 6mA

600nC @ 10V

15200pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

GWM180-004X2-SL

IXYS

MOSFET 6N-CH 40V 180A 17-SMD

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Flat Leads
Supplier Device Package: ISOPLUS-DIL?

封装: 17-SMD, Flat Leads

库存7,712

Standard

40V

180A

2.5 mOhm @ 100A, 10V

4.5V @ 1mA

110nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Flat Leads

ISOPLUS-DIL?

GMM3X160-0055X2-SMD

IXYS

MOSFET 6N-CH 55V 150A 24-SMD

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SMD, Gull Wing
Supplier Device Package: 24-SMD

封装: 24-SMD, Gull Wing

库存5,632

Standard

55V

150A

-

4V @ 1mA

110nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

24-SMD, Gull Wing

24-SMD

ALD1102BPAL

Advanced Linear Devices Inc.

MOSFET 2P-CH 10.6V 8DIP

FET Type: 2 P-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 270 Ohm @ 5V
Vgs(th) (Max) @ Id: 1.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存5,008

Standard

10.6V

-

270 Ohm @ 5V

1.2V @ 10µA

-

10pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

NTLLD4951NFTWG

ON Semiconductor

MOSFET 2N-CH 30V 5.5A/6.3A WDFN8

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 6.3A
Rds On (Max) @ Id, Vgs: 17.4 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 15V
Power - Max: 800mW, 810mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3x3)

封装: 8-PowerWDFN

库存2,848

Standard

30V

5.5A, 6.3A

17.4 mOhm @ 9A, 10V

2.2V @ 250µA

12nC @ 10V

605pF @ 15V

800mW, 810mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-WDFN (3x3)

SH8K2TB1

Rohm Semiconductor

MOSFET 2N-CH 30V 6A SOP8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Supplier Device Package: 8-SOP (5.0x6.0)

封装: 8-SMD, Gull Wing

库存46,224

Logic Level Gate

30V

6A

30 mOhm @ 6A, 10V

2.5V @ 1mA

10.1nC @ 5V

520pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SMD, Gull Wing

8-SOP (5.0x6.0)

SI4532ADY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 3.7A 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A
Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.13W, 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,968

Logic Level Gate

30V

3.7A, 3A

53 mOhm @ 4.9A, 10V

1V @ 250µA

16nC @ 10V

-

1.13W, 1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

CSD87333Q3D

Texas Instruments

MOSFET 2N-CH 30V 15A 8SON

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 14.3 mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 15V
Power - Max: 6W
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-VSON (3.3x3.3)

封装: 8-PowerTDFN

库存6,304

Logic Level Gate, 5V Drive

30V

15A

14.3 mOhm @ 4A, 8V

1.2V @ 250µA

4.6nC @ 4.5V

662pF @ 15V

6W

125°C (TJ)

Surface Mount

8-PowerTDFN

8-VSON (3.3x3.3)

ALD310702SCL

Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

FET Type: 4 P-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 180mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.154", 3.90mm Width)

库存5,968

Standard

8V

-

180mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

FDS8978

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 7.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存137,412

Logic Level Gate

30V

7.5A

18 mOhm @ 7.5A, 10V

2.5V @ 250µA

26nC @ 10V

1270pF @ 15V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTZD3155CT1G

ON Semiconductor

MOSFET N/P-CH 20V SOT-563

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: SOT-563, SOT-666

库存9,856,656

Logic Level Gate

20V

540mA, 430mA

550 mOhm @ 540mA, 4.5V

1V @ 250µA

2.5nC @ 4.5V

150pF @ 16V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

QH8JE5TCR

Rohm Semiconductor

-100V DUAL PCH+PCH, TSMT8, POWER

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 50V
Power - Max: 1.1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

封装: -

Request a Quote

-

100V

2A (Ta)

270mOhm @ 2A, 10V

2.5V @ 1mA

19.7nC @ 10V

590pF @ 50V

1.1W (Ta)

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

DMN62D2UDW-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT363 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

Request a Quote

-

60V

340mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

0.8nC @ 4.5V

41pF @ 30V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SH8M31GZETB

Rohm Semiconductor

MOSFET N/P-CH 60V 4.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V, 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V, 2500pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存7,398

-

60V

4.5A (Ta)

65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V

3V @ 1mA

7nC @ 5V, 40nC @ 10V

500pF @ 10V, 2500pF @ 10V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

IRFN214BTA

Fairchild Semiconductor

MOSFET N-CH 250V

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MSCSM120AM03CT6LIAG

Microchip Technology

SIC 2N-CH 1200V 805A SP6C LI

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1kV
Power - Max: 3.215kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI

封装: -

库存6

-

1200V (1.2kV)

805A (Tc)

3.1mOhm @ 400A, 20V

2.8V @ 10mA

2320nC @ 20V

30200pF @ 1kV

3.215kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C LI

SSFK9120

Good-Ark Semiconductor

MOSFET N/P-CH 20V 0.8A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
Power - Max: 275mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

库存17,850

-

20V

800mA (Tc), 400mA (Tc)

300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V

1V @ 250µA

2nC @ 4.5V

75pF @ 10V, 78pF @ 10V

275mW (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

CCB016M12GM3T

Wolfspeed, Inc.

SIC MODULE 1200V

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 20.8mOhm @ 50A, 15V
Vgs(th) (Max) @ Id: 3.9V @ 23mA
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 1000V
Power - Max: 10mW
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

库存153

-

1200V (1.2kV)

50A (Tj)

20.8mOhm @ 50A, 15V

3.9V @ 23mA

236nC @ 15V

6700pF @ 1000V

10mW

-40°C ~ 150°C (TJ)

Chassis Mount

Module