页 65 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET，MOSFET - 阵列

记录 5,684
页  65/190
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封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot AUIRF7316Q
Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC
  • Supplier Device Package: 8-SO
封装: 8-SOIC
库存67,488
Logic Level Gate
30V
-
58 mOhm @ 4.9A, 10V
3V @ 250µA
34nC @ 10V
710pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SO
SP8M5FU6TB
Rohm Semiconductor

MOSFET N/P-CH 30V 6A/7A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 7A
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,328
Logic Level Gate
30V
6A, 7A
28 mOhm @ 6A, 10V
2.5V @ 1mA
10.1nC @ 5V
520pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
FD6M016N03
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 80A EPM15

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A
  • Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 295nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 15V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: EPM15
  • Supplier Device Package: EPM15
封装: EPM15
库存7,680
Standard
30V
80A
1.6 mOhm @ 40A, 10V
3V @ 250µA
295nC @ 10V
11535pF @ 15V
-
-40°C ~ 150°C (TJ)
Through Hole
EPM15
EPM15
hot SI1024X-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 0.485A SOT563F

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 485mA
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89-6
封装: SOT-563, SOT-666
库存2,800,284
Logic Level Gate
20V
485mA
700 mOhm @ 600mA, 4.5V
900mV @ 250µA
0.75nC @ 4.5V
-
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SC-89-6
TPCF8201(TE85L,F,M
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 3A VS-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 49 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
  • Power - Max: 330mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: VS-8 (2.9x1.5)
封装: 8-SMD, Flat Lead
库存6,416
Logic Level Gate
20V
3A
49 mOhm @ 1.5A, 4.5V
1.2V @ 200µA
7.5nC @ 5V
590pF @ 10V
330mW
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
VS-8 (2.9x1.5)
19MT050XF
Vishay Semiconductor Diodes Division

MOSFET 4N-CH 500V 31A MTP

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 31A
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7210pF @ 25V
  • Power - Max: 1140W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 16-MTP Module
  • Supplier Device Package: 16-MTP
封装: 16-MTP Module
库存3,296
Standard
500V
31A
220 mOhm @ 19A, 10V
6V @ 250µA
160nC @ 10V
7210pF @ 25V
1140W
-40°C ~ 150°C (TJ)
Chassis Mount
16-MTP Module
16-MTP
IPG16N10S461AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 16A
  • Rds On (Max) @ Id, Vgs: 61 mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 9µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • Power - Max: 29W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
封装: 8-PowerVDFN
库存6,592
Standard
100V
16A
61 mOhm @ 16A, 10V
3.5V @ 9µA
7nC @ 10V
490pF @ 25V
29W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
APTM120DU15G
Microsemi Corporation

MOSFET 2N-CH 1200V 60A SP6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 60A
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
封装: SP6
库存6,656
Standard
1200V (1.2kV)
60A
175 mOhm @ 30A, 10V
5V @ 10mA
748nC @ 10V
20600pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
ALD212914SAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 0.08A 8SOIC

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 80mA
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 20mV @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 500mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存6,672
Logic Level Gate
10.6V
80mA
-
20mV @ 10µA
-
-
500mW
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMC1029UFDB-13
Diodes Incorporated

MOSFET N/P-CH 12V 6UDFN

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
封装: 6-UDFN Exposed Pad
库存6,064
Standard
12V
5.6A, 3.8A
29 mOhm @ 5A, 4.5V
1V @ 250µA
19.6nC @ 8V
914pF @ 6V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
U-DFN2020-6 (Type B)
CSD86360Q5D
Texas Instruments

MOSFET 2N-CH 25V 50A 8SON

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 50A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 12.5
  • Power - Max: 13W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: 8-LSON (5x6)
封装: 8-PowerLDFN
库存7,712
Logic Level Gate
25V
50A
-
2.1V @ 250µA
12.6nC @ 4.5V
2060pF @ 12.5
13W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerLDFN
8-LSON (5x6)
hot ZXMC3A16DN8TC
Diodes Incorporated

MOSFET N/P-CH 30V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存419,724
Logic Level Gate
30V
4.9A, 4.1A
35 mOhm @ 9A, 10V
1V @ 250µA (Min)
17.5nC @ 10V
796pF @ 25V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
FDMD8240L
Fairchild/ON Semiconductor

MOSFET 2N-CH 40V 23A

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 23A
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWDFN
  • Supplier Device Package: 12-Power3.3x5
封装: 12-PowerWDFN
库存5,904
Standard
40V
23A
2.6 mOhm @ 23A, 10V
3V @ 250µA
56nC @ 10V
4230pF @ 20V
2.1W
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerWDFN
12-Power3.3x5
hot STS8DN3LLH5
STMicroelectronics

MOSFET 2N-CH 30V 10A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 724pF @ 25V
  • Power - Max: 2.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存508,416
Logic Level Gate
30V
10A
19 mOhm @ 5A, 10V
1V @ 250µA
5.4nC @ 4.5V
724pF @ 25V
2.7W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SQ4940AEY-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
  • Power - Max: 4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,072
Logic Level Gate
40V
8A
24 mOhm @ 5.3A, 10V
2.5V @ 250µA
43nC @ 10V
741pF @ 20V
4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMC1016UPD-13
Diodes Incorporated

MOSFET 8V 24V POWERDI5060-8

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
封装: 8-PowerTDFN
库存7,184
Standard
12V, 20V
9.5A, 8.7A
17 mOhm @ 11.8A, 4.5V
1.5V @ 250µA
32nC @ 8V
1454pF @ 6V
2.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
hot ECH8693R-TL-W
ON Semiconductor

MOSFET 2N-CH 24V 14A SOT-28

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 14A
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.4W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: SOT-28FL/ECH8
封装: 8-SMD, Flat Lead
库存432,000
Logic Level Gate, 2.5V Drive
24V
14A
7 mOhm @ 5A, 4.5V
-
13nC @ 4.5V
-
1.4W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
SOT-28FL/ECH8
hot EM6K1T2R
Rohm Semiconductor

MOSFET 2N-CH 30V .1A EMT6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: EMT6
封装: SOT-563, SOT-666
库存16,080
Logic Level Gate
30V
100mA
8 Ohm @ 10mA, 4V
1.5V @ 100µA
-
13pF @ 5V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
EMT6
hot FDG6318PZ
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 0.5A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 780 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.62nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 85.4pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6
封装: 6-TSSOP, SC-88, SOT-363
库存285,048
Logic Level Gate
20V
500mA
780 mOhm @ 500mA, 4.5V
1.5V @ 250µA
1.62nC @ 4.5V
85.4pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6
hot IRF7509TRPBF
Infineon Technologies

MOSFET N/P-CH 30V 2.7A/2A MICRO8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8?
封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
库存105,324
Logic Level Gate
30V
2.7A, 2A
110 mOhm @ 1.7A, 10V
1V @ 250µA
12nC @ 10V
210pF @ 25V
1.25W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8?
BSS84AKS,115
Nexperia USA Inc.

MOSFET 2P-CH 50V 0.16A 6TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 160mA
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
  • Power - Max: 445mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
封装: 6-TSSOP, SC-88, SOT-363
库存2,608
Logic Level Gate
50V
160mA
7.5 Ohm @ 100mA, 10V
2.1V @ 250µA
0.35nC @ 5V
36pF @ 25V
445mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
hot NTZD3154NT1G
ON Semiconductor

MOSFET 2N-CH 20V 0.54A SOT-563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
封装: SOT-563, SOT-666
库存2,094,744
Standard
20V
540mA
550 mOhm @ 540mA, 4.5V
1V @ 250µA
2.5nC @ 4.5V
150pF @ 16V
250mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
MSQ30P07D
Bruckewell

P-Channel MOSFET,dual,30V,6.5A,T

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (Tc)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: -
Request a Quote
-
30V
6.5A
28mOhm @ 6A, 10V
2.5V @ 250µA
-
-
-
-55°C ~ 150°C (Tc)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SQJQ936E-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 100A PPAK8X8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
  • Power - Max: 75W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 8 x 8 Dual
  • Supplier Device Package: PowerPAK® 8 x 8 Dual
封装: -
Request a Quote
-
40V
100A (Tc)
2.3mOhm @ 5A, 10V
3.5V @ 250µA
113nC @ 10V
6600pF @ 25V
75W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8 Dual
PowerPAK® 8 x 8 Dual
MCQD04N06-TP
Micro Commercial Co

MOSFET

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 30V
  • Power - Max: 1.7W (Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: -
Request a Quote
-
60V
4A (Ta)
75mOhm @ 4A, 10V
2V @ 250µA
9nC @ 10V
400pF @ 30V
1.7W (Tj)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
FW340-M-TL-E
onsemi

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
UFB25SC12E1BC3N
Qorvo

1200V/25A,SIC,FULL-BRIDGE,G3,E1B

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
CAB400M12XM3
Wolfspeed, Inc.

MOSFET 2 N-CH 1200V MODULE

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 395A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.3mOhm @ 400A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 92mA
  • Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封装: -
库存24
-
1200V (1.2kV)
395A (Tc)
5.3mOhm @ 400A, 15V
3.6V @ 92mA
908nC @ 15V
2450pF @ 800V
-
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
SIZF5302DT-T1-RE3
Vishay Siliconix

MOSFET 2N-CH 30V 28.1A PWRPAIR

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
  • Power - Max: 3.8W (Ta), 48.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerPair™
  • Supplier Device Package: PowerPAIR® 3x3FS
封装: -
库存15,843
-
30V
28.1A (Ta), 100A (Tc)
3.2mOhm @ 10A, 10V
2V @ 250µA
22.2nC @ 10V
1030pF @ 15V
3.8W (Ta), 48.1W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerPair™
PowerPAIR® 3x3FS
PJQ5850_R2_00001
Panjit International Inc.

MOSFET 2N-CH 40V 5A/14A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 14A (Tc)
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V
  • Power - Max: 1.7W (Ta), 12W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: DFN5060B-8
封装: -
Request a Quote
-
40V
5A (Ta), 14A (Tc)
33mOhm @ 8A, 10V
2.5V @ 250µA
4.4nC @ 4.5V
425pF @ 25V
1.7W (Ta), 12W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
DFN5060B-8