页 36 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF9362PBF	Infineon Technologies	MOSFET 2P-CH 30V 8A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,648	Logic Level Gate	30V	8A	21 mOhm @ 8A, 10V	2.4V @ 25µA	39nC @ 10V	1300pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7324	Infineon Technologies	MOSFET 2P-CH 20V 9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,712	Logic Level Gate	20V	9A	18 mOhm @ 9A, 4.5V	1V @ 250µA	63nC @ 5V	2940pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PMGD130UN,115	NXP	MOSFET 2N-CH 20V 1.2A 6TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A Rds On (Max) @ Id, Vgs: 145 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V Power - Max: 390mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封装: 6-TSSOP, SC-88, SOT-363	库存42,000	Logic Level Gate	20V	1.2A	145 mOhm @ 1.2A, 4.5V	1V @ 250µA	1.3nC @ 4.5V	83pF @ 10V	390mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
SI1972DH-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 1.3A SC-70-6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.3A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	封装: 6-TSSOP, SC-88, SOT-363	库存526,224	Standard	30V	1.3A	225 mOhm @ 1.3A, 10V	2.8V @ 250µA	2.8nC @ 10V	75pF @ 15V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SI7945DP-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 7A PPAK SO-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存5,216	Logic Level Gate	30V	7A	20 mOhm @ 10.9A, 10V	3V @ 250µA	74nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
NTZD3152PT5G	ON Semiconductor	MOSFET 2P-CH 20V 0.43A SOT-563 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 430mA Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: SOT-563, SOT-666	库存3,664	Standard	20V	430mA	900 mOhm @ 430mA, 4.5V	1V @ 250µA	2.5nC @ 4.5V	175pF @ 16V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NTQD6968NR2	ON Semiconductor	MOSFET 2N-CH 20V 6.2A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V Power - Max: 1.39W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存7,008	Logic Level Gate	20V	6.2A	22 mOhm @ 7A, 4.5V	1.2V @ 250µA	17nC @ 4.5V	630pF @ 16V	1.39W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
APTM50DDA10T3G	Microsemi Corporation	MOSFET 2N-CH 500V 37A SP3 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 37A Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V Power - Max: 312W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封装: SP3	库存5,776	Standard	500V	37A	120 mOhm @ 18.5A, 10V	5V @ 1mA	96nC @ 10V	4367pF @ 25V	312W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
SP8M8FU6TB	Rohm Semiconductor	MOSFET N/P-CH 30V 6A/4.5A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,808	Logic Level Gate	30V	6A, 4.5A	30 mOhm @ 6A, 10V	2.5V @ 1mA	10.1nC @ 5V	520pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMC2041UFDB-13	Diodes Incorporated	MOSFET N/P-CH 20V 6UDFN FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: 6-UDFN Exposed Pad	库存3,968	Standard	20V	4.7A, 3.2A	40 mOhm @ 4.2A, 4.5V	1.4V @ 250µA	15nC @ 8V	713pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
FW216A-TL-2W	ON Semiconductor	MOSFET 2N-CH 35V 4.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 64 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Power - Max: 2.2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,712	Logic Level Gate, 4V Drive	35V	4.5A	64 mOhm @ 4.5A, 10V	-	5.6nC @ 10V	280pF @ 10V	2.2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
STL20DNF06LAG	STMicroelectronics	MOSFET 2NCH 60V 20A POWERFLAT FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Power - Max: 75W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	封装: 8-PowerVDFN	库存3,216	Logic Level Gate	60V	20A	40 mOhm @ 4A, 10V	2.5V @ 250µA	22.5nC @ 10V	670pF @ 25V	75W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
DMN601VKQ-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.305A SOT563 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: SOT-563, SOT-666	库存3,360	Standard	60V	305mA	2 Ohm @ 500mA, 10V	2.5V @ 250µA	-	50pF @ 25V	250mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
AO6608	Alpha & Omega Semiconductor Inc.	MOSFET ARRAY N/P-CH 30/20V 6TSOP FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 3.3A (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V, 75 mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA, 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 510pF @ 10V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	封装: SC-74, SOT-457	库存2,688	Standard	30V, 20V	3.4A (Ta), 3.3A (Ta)	60 mOhm @ 3.4A, 10V, 75 mOhm @ 3.3A, 4.5V	1.5V @ 250µA, 1V @ 250µA	3nC @ 4.5V, 10nC @ 4.5V	235pF @ 15V, 510pF @ 10V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
SI7942DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 100V 3.8A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 49 mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存87,816	Logic Level Gate	100V	3.8A	49 mOhm @ 5.9A, 10V	4V @ 250µA	24nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
DMP4025LSD-13	Diodes Incorporated	MOSFET 2P-CH 40V 6.9A 8SO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.9A Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 20V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存151,656	Logic Level Gate	40V	6.9A	25 mOhm @ 3A, 10V	1.8V @ 250µA	33.7nC @ 10V	1640pF @ 20V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN5L06VKQ-13	Diodes Incorporated	MOSFET 2N-CH 50V 0.28A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	Request a Quote	-	50V	280mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	-	50pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FDMS7620S-F106	onsemi	MOSFET 2N-CH 30V 10.1A POWER56 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A Rds On (Max) @ Id, Vgs: 20mOhm @ 10.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Power - Max: 1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	封装: -	Request a Quote	-	30V	10.1A, 12.4A	20mOhm @ 10.1A, 10V	3V @ 250µA	11nC @ 10V	608pF @ 15V	1W	-	Surface Mount	8-PowerWDFN	Power56
UPA1952TE-T1-A	Renesas Electronics Corporation	MOSFET 2P-CH 20V 2A SC95 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V Power - Max: 1.15W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SC-95 Supplier Device Package: SC-95	封装: -	Request a Quote	Logic Level Gate, 1.8V Drive	20V	2A (Ta)	135mOhm @ 1A, 4.5V	1.5V @ 1mA	2.3nC @ 4V	272pF @ 10V	1.15W (Ta)	150°C	Surface Mount	SC-95	SC-95
UT6KB5TCR	Rohm Semiconductor	MOSFET 2N-CH 40V 5A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Supplier Device Package: HUML2020L8	封装: -	库存6,954	-	40V	5A (Ta)	48mOhm @ 5A, 10V	2.5V @ 1mA	3.5nC @ 10V	150pF @ 20V	2W (Ta)	150°C (TJ)	Surface Mount	6-PowerUDFN	HUML2020L8
2N7002DWL-TP	Micro Commercial Co	MOSFET 2N-CH 60V 0.115A SOT23-6L FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 225mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6L	封装: -	Request a Quote	-	60V	115mA	4.5Ohm @ 500mA, 10V	2.5V @ 250µA	-	50pF @ 25V	225mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6L
64-2013PBF	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SI3911DV-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 1.8A 6TSOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封装: -	Request a Quote	Logic Level Gate	20V	1.8A	145mOhm @ 2.2A, 4.5V	450mV @ 250µA (Min)	7.5nC @ 4.5V	-	830mW	-	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
FX205-TL-E-ON	onsemi	MOSFET P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM120AM042T6LIAG	Microchip Technology	SIC 2N-CH 1200V 495A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.8V @ 18mA Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V Power - Max: 2.031kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 18mA	1392nC @ 20V	18100pF @ 1000V	2.031kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
SP8K41HZGTB	Rohm Semiconductor	MOSFET 2N-CH 80V 3.4A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存6,378	-	80V	3.4A (Ta)	130mOhm @ 3.4A, 10V	2.5V @ 1mA	6.6nC @ 5V	600pF @ 10V	2W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
PJL9802_R2_00001	Panjit International Inc.	MOSFET 2N-CH 30V 5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Power - Max: 1.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	-	30V	5A (Ta)	48mOhm @ 5A, 10V	2.1V @ 250µA	5.8nC @ 10V	235pF @ 15V	1.7W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
2N7002KDW	HY Electronic (Cayman) Limited	Surface Mount Schottky Barrier D FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V Power - Max: 200mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	Request a Quote	-	60V	115mA (Ta)	3Ohm @ 500mA, 10V	2.5V @ 250µA	0.8nC @ 4.5V	35pF @ 25V	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
MSCSM170TLM23C3AG	Microchip Technology	SIC 4N-CH 1700V 124A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V Power - Max: 602W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封装: -	Request a Quote	-	1700V (1.7kV)	124A (Tc)	22.5mOhm @ 60A, 20V	3.2V @ 5mA	356nC @ 20V	6600pF @ 1000V	602W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
MSCSM120DUM31CTBL1NG	Microchip Technology	SIC 2N-CH 1200V 79A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 79A Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 310W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	79A	31mOhm @ 40A, 20V	2.8V @ 1mA	232nC @ 20V	3020pF @ 1000V	310W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-

IRF9362PBF

Infineon Technologies

MOSFET 2P-CH 30V 8A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,648

Logic Level Gate

30V

8A

21 mOhm @ 8A, 10V

2.4V @ 25µA

39nC @ 10V

1300pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7324

Infineon Technologies

MOSFET 2P-CH 20V 9A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,712

Logic Level Gate

20V

9A

18 mOhm @ 9A, 4.5V

1V @ 250µA

63nC @ 5V

2940pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

PMGD130UN,115

NXP

MOSFET 2N-CH 20V 1.2A 6TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Rds On (Max) @ Id, Vgs: 145 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
Power - Max: 390mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封装: 6-TSSOP, SC-88, SOT-363

库存42,000

Logic Level Gate

20V

1.2A

145 mOhm @ 1.2A, 4.5V

1V @ 250µA

1.3nC @ 4.5V

83pF @ 10V

390mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

SI1972DH-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 1.3A SC-70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

封装: 6-TSSOP, SC-88, SOT-363

库存526,224

Standard

30V

1.3A

225 mOhm @ 1.3A, 10V

2.8V @ 250µA

2.8nC @ 10V

75pF @ 15V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

SI7945DP-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 7A PPAK SO-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存5,216

Logic Level Gate

30V

7A

20 mOhm @ 10.9A, 10V

3V @ 250µA

74nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

NTZD3152PT5G

ON Semiconductor

MOSFET 2P-CH 20V 0.43A SOT-563

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 430mA
Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: SOT-563, SOT-666

库存3,664

Standard

20V

430mA

900 mOhm @ 430mA, 4.5V

1V @ 250µA

2.5nC @ 4.5V

175pF @ 16V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NTQD6968NR2

ON Semiconductor

MOSFET 2N-CH 20V 6.2A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V
Power - Max: 1.39W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存7,008

Logic Level Gate

20V

6.2A

22 mOhm @ 7A, 4.5V

1.2V @ 250µA

17nC @ 4.5V

630pF @ 16V

1.39W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

APTM50DDA10T3G

Microsemi Corporation

MOSFET 2N-CH 500V 37A SP3

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 37A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V
Power - Max: 312W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封装: SP3

库存5,776

Standard

500V

37A

120 mOhm @ 18.5A, 10V

5V @ 1mA

96nC @ 10V

4367pF @ 25V

312W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

SP8M8FU6TB

Rohm Semiconductor

MOSFET N/P-CH 30V 6A/4.5A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,808

Logic Level Gate

30V

6A, 4.5A

30 mOhm @ 6A, 10V

2.5V @ 1mA

10.1nC @ 5V

520pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMC2041UFDB-13

Diodes Incorporated

MOSFET N/P-CH 20V 6UDFN

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: 6-UDFN Exposed Pad

库存3,968

Standard

20V

4.7A, 3.2A

40 mOhm @ 4.2A, 4.5V

1.4V @ 250µA

15nC @ 8V

713pF @ 10V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

FW216A-TL-2W

ON Semiconductor

MOSFET 2N-CH 35V 4.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 64 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Power - Max: 2.2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,712

Logic Level Gate, 4V Drive

35V

4.5A

64 mOhm @ 4.5A, 10V

-

5.6nC @ 10V

280pF @ 10V

2.2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

STL20DNF06LAG

STMicroelectronics

MOSFET 2NCH 60V 20A POWERFLAT

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Power - Max: 75W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

封装: 8-PowerVDFN

库存3,216

Logic Level Gate

60V

20A

40 mOhm @ 4A, 10V

2.5V @ 250µA

22.5nC @ 10V

670pF @ 25V

75W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

DMN601VKQ-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.305A SOT563

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 250mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: SOT-563, SOT-666

库存3,360

Standard

60V

305mA

2 Ohm @ 500mA, 10V

2.5V @ 250µA

-

50pF @ 25V

250mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

AO6608

Alpha & Omega Semiconductor Inc.

MOSFET ARRAY N/P-CH 30/20V 6TSOP

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V, 75 mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA, 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 510pF @ 10V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

封装: SC-74, SOT-457

库存2,688

Standard

30V, 20V

3.4A (Ta), 3.3A (Ta)

60 mOhm @ 3.4A, 10V, 75 mOhm @ 3.3A, 4.5V

1.5V @ 250µA, 1V @ 250µA

3nC @ 4.5V, 10nC @ 4.5V

235pF @ 15V, 510pF @ 10V

1.25W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

SI7942DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 100V 3.8A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 49 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存87,816

Logic Level Gate

100V

3.8A

49 mOhm @ 5.9A, 10V

4V @ 250µA

24nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

DMP4025LSD-13

Diodes Incorporated

MOSFET 2P-CH 40V 6.9A 8SO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 20V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存151,656

Logic Level Gate

40V

6.9A

25 mOhm @ 3A, 10V

1.8V @ 250µA

33.7nC @ 10V

1640pF @ 20V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN5L06VKQ-13

Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

Request a Quote

-

50V

280mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

-

50pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

FDMS7620S-F106

onsemi

MOSFET 2N-CH 30V 10.1A POWER56

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A
Rds On (Max) @ Id, Vgs: 20mOhm @ 10.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Power - Max: 1W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

封装: -

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30V

10.1A, 12.4A

20mOhm @ 10.1A, 10V

3V @ 250µA

11nC @ 10V

608pF @ 15V

1W

-

Surface Mount

8-PowerWDFN

Power56

UPA1952TE-T1-A

Renesas Electronics Corporation

MOSFET 2P-CH 20V 2A SC95

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V
Power - Max: 1.15W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-95
Supplier Device Package: SC-95

封装: -

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Logic Level Gate, 1.8V Drive

20V

2A (Ta)

135mOhm @ 1A, 4.5V

1.5V @ 1mA

2.3nC @ 4V

272pF @ 10V

1.15W (Ta)

150°C

Surface Mount

SC-95

UT6KB5TCR

Rohm Semiconductor

MOSFET 2N-CH 40V 5A HUML2020L8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Supplier Device Package: HUML2020L8

封装: -

库存6,954

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40V

5A (Ta)

48mOhm @ 5A, 10V

2.5V @ 1mA

3.5nC @ 10V

150pF @ 20V

2W (Ta)

150°C (TJ)

Surface Mount

6-PowerUDFN

HUML2020L8

2N7002DWL-TP

Micro Commercial Co

MOSFET 2N-CH 60V 0.115A SOT23-6L

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 225mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6L

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60V

115mA

4.5Ohm @ 500mA, 10V

2.5V @ 250µA

-

50pF @ 25V

225mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-23-6L

64-2013PBF

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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SI3911DV-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 1.8A 6TSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

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Logic Level Gate

20V

1.8A

145mOhm @ 2.2A, 4.5V

450mV @ 250µA (Min)

7.5nC @ 4.5V

-

830mW

-

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

FX205-TL-E-ON

onsemi

MOSFET P-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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MSCSM120AM042T6LIAG

Microchip Technology

SIC 2N-CH 1200V 495A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Power - Max: 2.031kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

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1200V (1.2kV)

495A (Tc)

5.2mOhm @ 240A, 20V

2.8V @ 18mA

1392nC @ 20V

18100pF @ 1000V

2.031kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

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SP8K41HZGTB

Rohm Semiconductor

MOSFET 2N-CH 80V 3.4A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存6,378

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80V

3.4A (Ta)

130mOhm @ 3.4A, 10V

2.5V @ 1mA

6.6nC @ 5V

600pF @ 10V

2W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

PJL9802_R2_00001

Panjit International Inc.

MOSFET 2N-CH 30V 5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Power - Max: 1.7W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

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30V

5A (Ta)

48mOhm @ 5A, 10V

2.1V @ 250µA

5.8nC @ 10V

235pF @ 15V

1.7W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

2N7002KDW

HY Electronic (Cayman) Limited

Surface Mount Schottky Barrier D

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V
Power - Max: 200mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

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60V

115mA (Ta)

3Ohm @ 500mA, 10V

2.5V @ 250µA

0.8nC @ 4.5V

35pF @ 25V

200mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

MSCSM170TLM23C3AG

Microchip Technology

SIC 4N-CH 1700V 124A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
Power - Max: 602W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

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1700V (1.7kV)

124A (Tc)

22.5mOhm @ 60A, 20V

3.2V @ 5mA

356nC @ 20V

6600pF @ 1000V

602W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

MSCSM120DUM31CTBL1NG

Microchip Technology

SIC 2N-CH 1200V 79A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 79A
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 310W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

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1200V (1.2kV)

79A

31mOhm @ 40A, 20V

2.8V @ 1mA

232nC @ 20V

3020pF @ 1000V

310W

-55°C ~ 175°C (TJ)

Chassis Mount

Module

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