页 35 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7750GTRPBF	Infineon Technologies	MOSFET 2P-CH 20V 4.7A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存7,776	Logic Level Gate	20V	4.7A	30 mOhm @ 4.7A, 4.5V	1.2V @ 250µA	39nC @ 5V	1700pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IRF7316TR	Infineon Technologies	MOSFET 2P-CH 30V 4.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存121,584	Logic Level Gate	30V	4.9A	58 mOhm @ 4.9A, 10V	1V @ 250µA	34nC @ 10V	710pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
EMH2411R-TL-H	ON Semiconductor	MOSFET 2N-CH 30V 5A EMH8 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 36.5 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-EMH	封装: 8-SMD, Flat Lead	库存2,432	Logic Level Gate, 2.5V Drive	30V	5A	36.5 mOhm @ 2.5A, 4.5V	-	5.9nC @ 4.5V	-	1.4W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-EMH
SI4542DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,392	Logic Level Gate	30V	-	25 mOhm @ 6.9A, 10V	1V @ 250µA (Min)	50nC @ 10V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4276DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Power - Max: 3.6W, 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,952	Logic Level Gate	30V	8A	15.3 mOhm @ 9.5A, 10V	2.5V @ 250µA	26nC @ 10V	1000pF @ 15V	3.6W, 2.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTTD1P02R2G	ON Semiconductor	MOSFET 2P-CH 20V 1.45A 8MICRO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.45A Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.45A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 16V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8?	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存3,584	Logic Level Gate	20V	1.45A	160 mOhm @ 1.45A, 4.5V	1.4V @ 250µA	10nC @ 4.5V	265pF @ 16V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8?
APTM100H45FT3G	Microsemi Corporation	MOSFET 4N-CH 1000V 18A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封装: SP3	库存5,568	Standard	1000V (1kV)	18A	540 mOhm @ 9A, 10V	5V @ 2.5mA	154nC @ 10V	4350pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
VMM85-02F	IXYS	MOSFET 2N-CH 200V 84A Y4 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 84A Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V Power - Max: 370W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y4 Supplier Device Package: Y4	封装: Y4	库存2,624	Standard	200V	84A	25 mOhm @ 500mA, 10V	4V @ 8mA	450nC @ 10V	15000pF @ 25V	370W	-40°C ~ 150°C (TJ)	Chassis Mount	Y4	Y4
EFC6605R-V-TR	ON Semiconductor	MOSFET N-CH DUAL 10A 24V 6XFLGA FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,840	-	-	-	-	-	-	-	-	-	-	-	-
DMTH6016LSD-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V SO-8 FET Type: 2 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,376	Standard	-	7.6A (Ta)	19.5 mOhm @ 10A, 10V	2.5V @ 250µA	17nC @ 10V	864pF @ 30V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AON4803	Alpha & Omega Semiconductor Inc.	MOSFET 2P-CH 20V 3.4A DFN3X2 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 10V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (3x2)	封装: 8-SMD, Flat Lead	库存195,504	Logic Level Gate	20V	3.4A	90 mOhm @ 3.4A, 4.5V	1V @ 250µA	8nC @ 4.5V	745pF @ 10V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (3x2)
DMN61D8LVTQ-13	Diodes Incorporated	MOSFET 2N-CH 60V 0.63A TSOT26 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 630mA Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Power - Max: 820mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: SOT-23-6 Thin, TSOT-23-6	库存3,360	Logic Level Gate	60V	630mA	1.8 Ohm @ 150mA, 5V	2V @ 1mA	0.74nC @ 5V	12.9pF @ 12V	820mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
SI1028X-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V SC89-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 15V Power - Max: 220mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	封装: SOT-563, SOT-666	库存42,000	Logic Level Gate	30V	-	650 mOhm @ 500mA, 10V	2.5V @ 250µA	2nC @ 10V	16pF @ 15V	220mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
ALD310704APCL	Advanced Linear Devices Inc.	QUAD P-CHANNEL EPAD MATCHED PAIR FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 380mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	封装: 16-DIP (0.300", 7.62mm)	库存6,064	Standard	8V	-	-	380mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
IRFI4212H-117P	Infineon Technologies	MOSFET 2N-CH 100V 11A TO-220FP-5 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 72.5 mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V Power - Max: 18W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack Supplier Device Package: TO-220-5 Full-Pak	封装: TO-220-5 Full Pack	库存282,516	Standard	100V	11A	72.5 mOhm @ 6.6A, 10V	5V @ 250µA	18nC @ 10V	490pF @ 50V	18W	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Full Pack	TO-220-5 Full-Pak
ALD1106PBL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 14DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-PDIP	封装: 14-DIP (0.300", 7.62mm)	库存20,472	Standard	10.6V	-	500 Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-PDIP
FDPC4044	Fairchild/ON Semiconductor	MOSFET 2N-CH 8MLP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Powerclip-33	封装: 8-PowerWDFN	库存5,904	Logic Level Gate	-	-	4.3 mOhm @ 27A, 10V	3V @ 250µA	49nC @ 10V	3215pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Powerclip-33
ECH8697R-TL-W	ON Semiconductor	MOSFET 2N-CH 24V 10A SOT-28 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/ECH8	封装: 8-SMD, Flat Lead	库存4,752,000	Logic Level Gate, 2.5V Drive	24V	10A	11.6 mOhm @ 5A, 4.5V	-	6nC @ 4.5V	-	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	SOT-28FL/ECH8
BSL215CH6327XTSA1	Infineon Technologies	MOSFET N/P-CH 20V 1.5A TSOP-6 FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	封装: SOT-23-6 Thin, TSOT-23-6	库存26,778	Logic Level Gate, 2.5V Drive	20V	1.5A	140 mOhm @ 1.5A, 4.5V	1.2V @ 3.7µA	0.73nC @ 4.5V	143pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
FDS89141	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V 3.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 62 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存20,046	Logic Level Gate	100V	3.5A	62 mOhm @ 3.5A, 10V	4V @ 250µA	7.1nC @ 10V	398pF @ 50V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MSCSM170DUM23T3AG	Microchip Technology	SIC 2N-CH 1700V 124A SP3F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V Power - Max: 602W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP3F	封装: -	Request a Quote	-	1700V (1.7kV)	124A (Tc)	22.5mOhm @ 60A, 20V	3.2V @ 5mA	356nC @ 20V	6600pF @ 1000V	602W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP3F
SI6562DQ-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 8-TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: -	Request a Quote	Logic Level Gate	20V	-	30mOhm @ 4.5A, 4.5V	600mV @ 250µA (Min)	25nC @ 4.5V	-	1W	-	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IPG20N06S2L65AAUMA1	Infineon Technologies	MOSFET 2N-CH 55V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Power - Max: 43W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	封装: -	Request a Quote	Logic Level Gate	55V	20A (Tc)	65mOhm @ 15A, 10V	2V @ 14µA	12nC @ 10V	410pF @ 25V	43W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerVDFN	PG-TDSON-8-10
FDG6303N_G	onsemi	MOSFET 2N-CH 25V 0.5A SC88 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88 (SC-70-6)	封装: -	Request a Quote	Logic Level Gate	25V	500mA	450mOhm @ 500mA, 4.5V	1.5V @ 250µA	2.3nC @ 4.5V	50pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88 (SC-70-6)
BSM300D12P4G101	Rohm Semiconductor	SIC 2N-CH 1200V 291A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 291A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4.8V @ 145.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V Power - Max: 925W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	库存24	-	1200V (1.2kV)	291A (Tc)	-	4.8V @ 145.6mA	-	30000pF @ 10V	925W (Tc)	175°C (TJ)	Chassis Mount	Module	Module
EFC4601-M-TR	Sanyo	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
F415MR12W2M1B76BOMA1	Infineon Technologies	SIC 4N-CH 1200V 75A AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 75A (Tj) Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 15V Vgs(th) (Max) @ Id: 5.55V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 5520pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B-2	封装: -	Request a Quote	-	1200V (1.2kV)	75A (Tj)	15mOhm @ 75A, 15V	5.55V @ 30mA	186nC @ 15V	5520pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1B-2
DMPH4013SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SQUN702E-T1_GE3	Vishay Siliconix	MOSFET N/P-CH 40V/200V 30A DIE FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V, 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 20A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V Power - Max: 48W (Tc), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	-	40V, 200V	30A (Tc), 20A (Tc)	9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V	2.5V @ 250µA, 3.5V @ 250µA	23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V	1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V	48W (Tc), 60W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	Die	Die
AUIRFN8458TRXTMA1	Infineon Technologies	MOSFET 2N-CH 40V 43A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.9V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PQFN (5x6)	封装: -	Request a Quote	-	40V	43A (Tc)	10mOhm @ 26A, 10V	3.9V @ 25µA	33nC @ 10V	2250pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-PQFN (5x6)

IRF7750GTRPBF

Infineon Technologies

MOSFET 2P-CH 20V 4.7A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存7,776

Logic Level Gate

20V

4.7A

30 mOhm @ 4.7A, 4.5V

1.2V @ 250µA

39nC @ 5V

1700pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IRF7316TR

Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存121,584

Logic Level Gate

30V

4.9A

58 mOhm @ 4.9A, 10V

1V @ 250µA

34nC @ 10V

710pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

EMH2411R-TL-H

ON Semiconductor

MOSFET 2N-CH 30V 5A EMH8

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 36.5 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-EMH

封装: 8-SMD, Flat Lead

库存2,432

Logic Level Gate, 2.5V Drive

30V

5A

36.5 mOhm @ 2.5A, 4.5V

-

5.9nC @ 4.5V

-

1.4W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-EMH

SI4542DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,392

Logic Level Gate

30V

-

25 mOhm @ 6.9A, 10V

1V @ 250µA (Min)

50nC @ 10V

-

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4276DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Power - Max: 3.6W, 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,952

Logic Level Gate

30V

8A

15.3 mOhm @ 9.5A, 10V

2.5V @ 250µA

26nC @ 10V

1000pF @ 15V

3.6W, 2.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTTD1P02R2G

ON Semiconductor

MOSFET 2P-CH 20V 1.45A 8MICRO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.45A
Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.45A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 16V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8?

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存3,584

Logic Level Gate

20V

1.45A

160 mOhm @ 1.45A, 4.5V

1.4V @ 250µA

10nC @ 4.5V

265pF @ 16V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8?

APTM100H45FT3G

Microsemi Corporation

MOSFET 4N-CH 1000V 18A SP3

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封装: SP3

库存5,568

Standard

1000V (1kV)

18A

540 mOhm @ 9A, 10V

5V @ 2.5mA

154nC @ 10V

4350pF @ 25V

357W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

VMM85-02F

IXYS

MOSFET 2N-CH 200V 84A Y4

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 84A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V
Power - Max: 370W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4
Supplier Device Package: Y4

封装: Y4

库存2,624

Standard

200V

84A

25 mOhm @ 500mA, 10V

4V @ 8mA

450nC @ 10V

15000pF @ 25V

370W

-40°C ~ 150°C (TJ)

Chassis Mount

Y4

EFC6605R-V-TR

ON Semiconductor

MOSFET N-CH DUAL 10A 24V 6XFLGA

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,840

-

DMTH6016LSD-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8

FET Type: 2 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,376

Standard

-

7.6A (Ta)

19.5 mOhm @ 10A, 10V

2.5V @ 250µA

17nC @ 10V

864pF @ 30V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AON4803

Alpha & Omega Semiconductor Inc.

MOSFET 2P-CH 20V 3.4A DFN3X2

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 10V
Power - Max: 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-DFN (3x2)

封装: 8-SMD, Flat Lead

库存195,504

Logic Level Gate

20V

3.4A

90 mOhm @ 3.4A, 4.5V

1V @ 250µA

8nC @ 4.5V

745pF @ 10V

1.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-DFN (3x2)

DMN61D8LVTQ-13

Diodes Incorporated

MOSFET 2N-CH 60V 0.63A TSOT26

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Power - Max: 820mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: SOT-23-6 Thin, TSOT-23-6

库存3,360

Logic Level Gate

60V

630mA

1.8 Ohm @ 150mA, 5V

2V @ 1mA

0.74nC @ 5V

12.9pF @ 12V

820mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

SI1028X-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V SC89-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 15V
Power - Max: 220mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

封装: SOT-563, SOT-666

库存42,000

Logic Level Gate

30V

-

650 mOhm @ 500mA, 10V

2.5V @ 250µA

2nC @ 10V

16pF @ 15V

220mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

ALD310704APCL

Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

FET Type: 4 P-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 380mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

封装: 16-DIP (0.300", 7.62mm)

库存6,064

Standard

8V

-

380mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

IRFI4212H-117P

Infineon Technologies

MOSFET 2N-CH 100V 11A TO-220FP-5

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 72.5 mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V
Power - Max: 18W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5 Full Pack
Supplier Device Package: TO-220-5 Full-Pak

封装: TO-220-5 Full Pack

库存282,516

Standard

100V

11A

72.5 mOhm @ 6.6A, 10V

5V @ 250µA

18nC @ 10V

490pF @ 50V

18W

-55°C ~ 150°C (TJ)

Through Hole

TO-220-5 Full Pack

TO-220-5 Full-Pak

ALD1106PBL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 14DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: 14-PDIP

封装: 14-DIP (0.300", 7.62mm)

库存20,472

Standard

10.6V

-

500 Ohm @ 5V

1V @ 1µA

-

3pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

14-PDIP

FDPC4044

Fairchild/ON Semiconductor

MOSFET 2N-CH 8MLP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Powerclip-33

封装: 8-PowerWDFN

库存5,904

Logic Level Gate

-

4.3 mOhm @ 27A, 10V

3V @ 250µA

49nC @ 10V

3215pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Powerclip-33

ECH8697R-TL-W

ON Semiconductor

MOSFET 2N-CH 24V 10A SOT-28

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/ECH8

封装: 8-SMD, Flat Lead

库存4,752,000

Logic Level Gate, 2.5V Drive

24V

10A

11.6 mOhm @ 5A, 4.5V

-

6nC @ 4.5V

-

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

SOT-28FL/ECH8

BSL215CH6327XTSA1

Infineon Technologies

MOSFET N/P-CH 20V 1.5A TSOP-6

FET Type: N and P-Channel Complementary
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

封装: SOT-23-6 Thin, TSOT-23-6

库存26,778

Logic Level Gate, 2.5V Drive

20V

1.5A

140 mOhm @ 1.5A, 4.5V

1.2V @ 3.7µA

0.73nC @ 4.5V

143pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

FDS89141

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 3.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 62 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存20,046

Logic Level Gate

100V

3.5A

62 mOhm @ 3.5A, 10V

4V @ 250µA

7.1nC @ 10V

398pF @ 50V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MSCSM170DUM23T3AG

Microchip Technology

SIC 2N-CH 1700V 124A SP3F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
Power - Max: 602W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F

封装: -

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-

1700V (1.7kV)

124A (Tc)

22.5mOhm @ 60A, 20V

3.2V @ 5mA

356nC @ 20V

6600pF @ 1000V

602W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP3F

SI6562DQ-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 8-TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: -

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Logic Level Gate

20V

-

30mOhm @ 4.5A, 4.5V

600mV @ 250µA (Min)

25nC @ 4.5V

-

1W

-

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IPG20N06S2L65AAUMA1

Infineon Technologies

MOSFET 2N-CH 55V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Power - Max: 43W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

封装: -

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Logic Level Gate

55V

20A (Tc)

65mOhm @ 15A, 10V

2V @ 14µA

12nC @ 10V

410pF @ 25V

43W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerVDFN

PG-TDSON-8-10

FDG6303N_G

onsemi

MOSFET 2N-CH 25V 0.5A SC88

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88 (SC-70-6)

封装: -

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Logic Level Gate

25V

500mA

450mOhm @ 500mA, 4.5V

1.5V @ 250µA

2.3nC @ 4.5V

50pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88 (SC-70-6)

BSM300D12P4G101

Rohm Semiconductor

SIC 2N-CH 1200V 291A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 291A (Tc)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4.8V @ 145.6mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 30000pF @ 10V
Power - Max: 925W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

库存24

-

1200V (1.2kV)

291A (Tc)

-

4.8V @ 145.6mA

-

30000pF @ 10V

925W (Tc)

175°C (TJ)

Chassis Mount

Module

EFC4601-M-TR

Sanyo

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

F415MR12W2M1B76BOMA1

Infineon Technologies

SIC 4N-CH 1200V 75A AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 30mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 5520pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B-2

封装: -

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-

1200V (1.2kV)

75A (Tj)

15mOhm @ 75A, 15V

5.55V @ 30mA

186nC @ 15V

5520pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1B-2

DMPH4013SPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

SQUN702E-T1_GE3

Vishay Siliconix

MOSFET N/P-CH 40V/200V 30A DIE

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V, 200V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 20A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
Power - Max: 48W (Tc), 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: Die
Supplier Device Package: Die

封装: -

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-

40V, 200V

30A (Tc), 20A (Tc)

9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V

2.5V @ 250µA, 3.5V @ 250µA

23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V

1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V

48W (Tc), 60W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

Die

AUIRFN8458TRXTMA1

Infineon Technologies

MOSFET 2N-CH 40V 43A 8PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)

封装: -

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-

40V

43A (Tc)

10mOhm @ 26A, 10V

3.9V @ 25µA

33nC @ 10V

2250pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-PQFN (5x6)