页 6 - 晶体管 - 双极 (BJT) - 射频 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MRF4427R1	Microsemi Corporation	TRANS NPN 20V 400MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 20dB Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-dBGA (2x1.5)	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,488	20V	-	-	20dB	1.5W	10 @ 10mA, 5V	400mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-dBGA (2x1.5)
MS2393	Microsemi Corporation	TRANS RF BIPO 87.5W 11A M138 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 8.2dB Power - Max: 583W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 300mA, 5V Current - Collector (Ic) (Max): 11A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M138 Supplier Device Package: M138	封装: M138	库存3,104	65V	1.025GHz ~ 1.15GHz	-	8.2dB	583W	5 @ 300mA, 5V	11A	200°C (TJ)	Chassis Mount	M138	M138
MS2213	Microsemi Corporation	TRANS RF BIPO 75W 3.5A M214 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.8dB Power - Max: 75W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 3.5A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M214 Supplier Device Package: M214	封装: M214	库存4,544	55V	960MHz ~ 1.215GHz	-	7.8dB	75W	15 @ 1A, 5V	3.5A	250°C (TJ)	Chassis Mount	M214	M214
2N4427	Microsemi Corporation	TRANS RF NPN 1W 400MA TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: 10dB @ 175MHz Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	封装: TO-205AD, TO-39-3 Metal Can	库存61,800	40V	500MHz	-	10dB @ 175MHz	1W	10 @ 100mA, 5V	400mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
NE68033-T1B-R45-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封装: TO-236-3, SC-59, SOT-23-3	库存3,504	10V	10GHz	1.8dB @ 2GHz	9dB	200mW	125 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
START405TR	STMicroelectronics	TRANS RF NPN SILICON SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 19dB Power - Max: 45mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 4V Current - Collector (Ic) (Max): 10mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: -	封装: SC-82A, SOT-343	库存396,000	4.5V	-	1.1dB @ 1.8GHz	19dB	45mW	160 @ 5mA, 4V	10mA	-	Surface Mount	SC-82A, SOT-343	-
AT-41533-TR2G	Broadcom Limited	TRANS NPN BIPO 12V 50MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz Gain: 9dB ~ 14.5dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封装: TO-236-3, SC-59, SOT-23-3	库存3,136	12V	-	1dB ~ 1.6dB @ 900MHz ~ 2.4GHz	9dB ~ 14.5dB	225mW	30 @ 5mA, 5V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NE685M33-T3-A	CEL	TRANSISTOR NPN 2GHZ M33 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz Gain: - Power - Max: 130mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-SuperMiniMold (M33)	封装: 3-SMD, Flat Leads	库存6,336	6V	12GHz	1.5dB ~ 2.5dB @ 2GHz	-	130mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-SuperMiniMold (M33)
NE68019-A	CEL	RF TRANSISTOR NPN SOT-523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 9.6dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	封装: SOT-523	库存2,112	10V	10GHz	1.9dB @ 2GHz	9.6dB	100mW	80 @ 5mA, 3V	35mA	150°C (TJ)	Surface Mount	SOT-523	SOT-523
NE52418-A	CEL	IC AMP HBT GAAS LN 4-SMINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 2GHz Gain: 14dB ~ 16dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: 4-Super Mini Mold	封装: SC-82A, SOT-343	库存3,120	5V	-	1dB ~ 1.5dB @ 2GHz	14dB ~ 16dB	150mW	100 @ 3mA, 2V	40mA	125°C (TJ)	Surface Mount	SC-82A, SOT-343	4-Super Mini Mold
KSC2786RBU	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92S Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: 18dB ~ 22dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Supplier Device Package: TO-92S	封装: TO-226-3, TO-92-3 Short Body	库存276,000	20V	600MHz	3dB ~ 5dB @ 100MHz	18dB ~ 22dB	250mW	40 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Short Body	TO-92S
SD1446	STMicroelectronics	TRANSISTOR NPN RF BIPO UHF M113 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 183W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M113 Supplier Device Package: M113	封装: M113	库存5,728	18V	-	-	10dB	183W	10 @ 5A, 5V	12A	200°C (TJ)	Surface Mount	M113	M113
BFG590/X,215	NXP	TRANS RF NPN 15V 5GHZ SOT143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	封装: TO-253-4, TO-253AA	库存5,184	15V	5GHz	-	-	400mW	60 @ 70mA, 8V	200mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
MS2207	Microsemi Corporation	TRANS RF BIPO 24A 65V M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 880W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	封装: M216	库存6,352	65V	1.09GHz	-	8dB	880W	10 @ 5A, 5V	24A	250°C (TJ)	Chassis Mount	M216	M216
MS3022	Microsemi Corporation	TRANS RF BIPO 7W 200MA M210 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 1GHz ~ 2GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 7W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M210 Supplier Device Package: M210	封装: M210	库存2,288	45V	1GHz ~ 2GHz	-	7dB	7W	15 @ 100mA, 5V	200mA	200°C (TJ)	Chassis Mount	M210	M210
BFG520,235	NXP	TRANS RF NPN 9GHZ 15V SOT143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	封装: TO-253-4, TO-253AA	库存7,104	15V	9GHz	1.1dB ~ 2.1dB @ 900MHz	-	300mW	60 @ 20mA, 6V	70mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
MCH4016-TL-H	ON Semiconductor	TRANS NPN 12V 30MA MCPH4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 18dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-MCPH	封装: 4-SMD, Flat Leads	库存4,160	12V	10GHz	1.2dB @ 1GHz	18dB	350mW	60 @ 5mA, 5V	30mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-MCPH
MCH4015-TL-H	ON Semiconductor	TRANS NPN 12V 100MA MCPH4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 17dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-MCPH	封装: 4-SMD, Flat Leads	库存6,608	12V	10GHz	1.2dB @ 1GHz	17dB	450mW	60 @ 50mA, 5V	100mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-MCPH
2SC4915-Y,LF	Toshiba Semiconductor and Storage	TRANS RF NPN 30V 550MHZ SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz Gain: 17dB ~ 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	封装: SC-75, SOT-416	库存4,400	30V	550MHz	2.3dB ~ 5dB @ 100MHz	17dB ~ 23dB	100mW	100 @ 1mA, 6V	20mA	125°C (TJ)	Surface Mount	SC-75, SOT-416	SSM
2SC5065-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 1MHZ USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: - Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	封装: SC-70, SOT-323	库存180,000	12V	7GHz	1dB @ 500MHz	-	100mW	80 @ 10mA, 5V	30mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
ZUMTS17NTA	Diodes Incorporated	TRANS RF 3.2GHZ 11V SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 11V Frequency - Transition: 3.2GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封装: SC-70, SOT-323	库存2,340,000	11V	3.2GHz	-	-	330mW	56 @ 5mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
BFR93AWH6327XTSA1	Infineon Technologies	TRANS RF NPN 12V 90MA SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 15.5dB Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 90mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封装: SC-70, SOT-323	库存117,048	12V	6GHz	1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz	10.5dB ~ 15.5dB	300mW	70 @ 30mA, 8V	90mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
NTE2501	NTE Electronics, Inc	RF TRANS NPN 300V 70MHZ TO126 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 300V Frequency - Transition: 70MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126	封装: -	Request a Quote	300V	70MHz	-	-	1.5W	100 @ 10mA, 10V	100mA	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	TO-126
MRF1004MB	MACOM Technology Solutions	TRANS NPN 4W 960MHZ-1215MHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 11dB Power - Max: 4W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 75mA, 5V Current - Collector (Ic) (Max): 250mA Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 332A-03 Supplier Device Package: 332A-03, Style 1	封装: -	Request a Quote	20V	-	-	11dB	4W	10 @ 75mA, 5V	250mA	-	Chassis Mount	332A-03	332A-03, Style 1
BFR949L3E6327	Infineon Technologies	RF BIPOLAR TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz Gain: 21.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-1	封装: -	Request a Quote	10V	9GHz	1dB ~ 2.5dB @ 1GHz	21.5dB	250mW	100 @ 5mA, 6V	50mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3-1
PH8906	MACOM Technology Solutions	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PH1214-55EL	MACOM Technology Solutions	TRANSISTOR,BIPOLAR,55W,28V,1.20- Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 58V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): - Gain: 6.6dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 7A Operating Temperature: 200°C Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: -	封装: -	Request a Quote	58V	1.4GHz	-	6.6dB	220W	-	7A	200°C	Chassis Mount	2L-FLG	-
SD1309-01H	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SD1015	Microsemi Corporation	RF TRANS NPN 18V 150MHZ M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C Mounting Type: Stud Mount Package / Case: M135 Supplier Device Package: M135	封装: -	Request a Quote	18V	150MHz	-	10dB	10W	35 @ 200mA, 5V	1A	200°C	Stud Mount	M135	M135
MMBT918_R1_00001	Panjit International Inc.	VHF/UHF NPN SILICON TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封装: -	库存8,802	15V	600MHz	-	-	225mW	20 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23

MRF4427R1

Microsemi Corporation

TRANS NPN 20V 400MA SO8

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 20dB
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-dBGA (2x1.5)

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,488

20V

-

20dB

1.5W

10 @ 10mA, 5V

400mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-dBGA (2x1.5)

MS2393

Microsemi Corporation

TRANS RF BIPO 87.5W 11A M138

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 8.2dB
Power - Max: 583W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 300mA, 5V
Current - Collector (Ic) (Max): 11A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M138
Supplier Device Package: M138

封装: M138

库存3,104

65V

1.025GHz ~ 1.15GHz

-

8.2dB

583W

5 @ 300mA, 5V

11A

200°C (TJ)

Chassis Mount

M138

MS2213

Microsemi Corporation

TRANS RF BIPO 75W 3.5A M214

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7.8dB
Power - Max: 75W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 3.5A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M214
Supplier Device Package: M214

封装: M214

库存4,544

55V

960MHz ~ 1.215GHz

-

7.8dB

75W

15 @ 1A, 5V

3.5A

250°C (TJ)

Chassis Mount

M214

2N4427

Microsemi Corporation

TRANS RF NPN 1W 400MA TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB @ 175MHz
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

封装: TO-205AD, TO-39-3 Metal Can

库存61,800

40V

500MHz

-

10dB @ 175MHz

1W

10 @ 100mA, 5V

400mA

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

NE68033-T1B-R45-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

库存3,504

10V

10GHz

1.8dB @ 2GHz

9dB

200mW

125 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

START405TR

STMicroelectronics

TRANS RF NPN SILICON SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 19dB
Power - Max: 45mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 4V
Current - Collector (Ic) (Max): 10mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: -

封装: SC-82A, SOT-343

库存396,000

4.5V

-

1.1dB @ 1.8GHz

19dB

45mW

160 @ 5mA, 4V

10mA

-

Surface Mount

SC-82A, SOT-343

-

AT-41533-TR2G

Broadcom Limited

TRANS NPN BIPO 12V 50MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
Gain: 9dB ~ 14.5dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

库存3,136

12V

-

1dB ~ 1.6dB @ 900MHz ~ 2.4GHz

9dB ~ 14.5dB

225mW

30 @ 5mA, 5V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NE685M33-T3-A

CEL

TRANSISTOR NPN 2GHZ M33

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
Gain: -
Power - Max: 130mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-SuperMiniMold (M33)

封装: 3-SMD, Flat Leads

库存6,336

6V

12GHz

1.5dB ~ 2.5dB @ 2GHz

-

130mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

3-SuperMiniMold (M33)

NE68019-A

CEL

RF TRANSISTOR NPN SOT-523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 9.6dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

封装: SOT-523

库存2,112

10V

10GHz

1.9dB @ 2GHz

9.6dB

100mW

80 @ 5mA, 3V

35mA

150°C (TJ)

Surface Mount

SOT-523

NE52418-A

CEL

IC AMP HBT GAAS LN 4-SMINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 2GHz
Gain: 14dB ~ 16dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: 4-Super Mini Mold

封装: SC-82A, SOT-343

库存3,120

5V

-

1dB ~ 1.5dB @ 2GHz

14dB ~ 16dB

150mW

100 @ 3mA, 2V

40mA

125°C (TJ)

Surface Mount

SC-82A, SOT-343

4-Super Mini Mold

KSC2786RBU

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92S

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: 18dB ~ 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S

封装: TO-226-3, TO-92-3 Short Body

库存276,000

20V

600MHz

3dB ~ 5dB @ 100MHz

18dB ~ 22dB

250mW

40 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 Short Body

TO-92S

SD1446

STMicroelectronics

TRANSISTOR NPN RF BIPO UHF M113

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 183W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 12A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: M113
Supplier Device Package: M113

封装: M113

库存5,728

18V

-

10dB

183W

10 @ 5A, 5V

12A

200°C (TJ)

Surface Mount

M113

BFG590/X,215

NXP

TRANS RF NPN 15V 5GHZ SOT143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

封装: TO-253-4, TO-253AA

库存5,184

15V

5GHz

-

400mW

60 @ 70mA, 8V

200mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

MS2207

Microsemi Corporation

TRANS RF BIPO 24A 65V M216

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 880W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 24A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

封装: M216

库存6,352

65V

1.09GHz

-

8dB

880W

10 @ 5A, 5V

24A

250°C (TJ)

Chassis Mount

M216

MS3022

Microsemi Corporation

TRANS RF BIPO 7W 200MA M210

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Frequency - Transition: 1GHz ~ 2GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 7W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M210
Supplier Device Package: M210

封装: M210

库存2,288

45V

1GHz ~ 2GHz

-

7dB

7W

15 @ 100mA, 5V

200mA

200°C (TJ)

Chassis Mount

M210

BFG520,235

NXP

TRANS RF NPN 9GHZ 15V SOT143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

封装: TO-253-4, TO-253AA

库存7,104

15V

9GHz

1.1dB ~ 2.1dB @ 900MHz

-

300mW

60 @ 20mA, 6V

70mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

MCH4016-TL-H

ON Semiconductor

TRANS NPN 12V 30MA MCPH4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 18dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-MCPH

封装: 4-SMD, Flat Leads

库存4,160

12V

10GHz

1.2dB @ 1GHz

18dB

350mW

60 @ 5mA, 5V

30mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-MCPH

MCH4015-TL-H

ON Semiconductor

TRANS NPN 12V 100MA MCPH4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 17dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-MCPH

封装: 4-SMD, Flat Leads

库存6,608

12V

10GHz

1.2dB @ 1GHz

17dB

450mW

60 @ 50mA, 5V

100mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-MCPH

2SC4915-Y,LF

Toshiba Semiconductor and Storage

TRANS RF NPN 30V 550MHZ SSM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.3dB ~ 5dB @ 100MHz
Gain: 17dB ~ 23dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

封装: SC-75, SOT-416

库存4,400

30V

550MHz

2.3dB ~ 5dB @ 100MHz

17dB ~ 23dB

100mW

100 @ 1mA, 6V

20mA

125°C (TJ)

Surface Mount

SC-75, SOT-416

SSM

2SC5065-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: -
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM

封装: SC-70, SOT-323

库存180,000

12V

7GHz

1dB @ 500MHz

-

100mW

80 @ 10mA, 5V

30mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

USM

ZUMTS17NTA

Diodes Incorporated

TRANS RF 3.2GHZ 11V SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 11V
Frequency - Transition: 3.2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封装: SC-70, SOT-323

库存2,340,000

11V

3.2GHz

-

330mW

56 @ 5mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

BFR93AWH6327XTSA1

Infineon Technologies

TRANS RF NPN 12V 90MA SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 15.5dB
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 90mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封装: SC-70, SOT-323

库存117,048

12V

6GHz

1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

10.5dB ~ 15.5dB

300mW

70 @ 30mA, 8V

90mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

NTE2501

NTE Electronics, Inc

RF TRANS NPN 300V 70MHZ TO126

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 300V
Frequency - Transition: 70MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126

封装: -

Request a Quote

300V

70MHz

-

1.5W

100 @ 10mA, 10V

100mA

150°C (TJ)

Through Hole

TO-225AA, TO-126-3

TO-126

MRF1004MB

MACOM Technology Solutions

TRANS NPN 4W 960MHZ-1215MHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 11dB
Power - Max: 4W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 75mA, 5V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 332A-03
Supplier Device Package: 332A-03, Style 1

封装: -

Request a Quote

20V

-

11dB

4W

10 @ 75mA, 5V

250mA

-

Chassis Mount

332A-03

332A-03, Style 1

BFR949L3E6327

Infineon Technologies

RF BIPOLAR TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
Gain: 21.5dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3-1

封装: -

Request a Quote

10V

9GHz

1dB ~ 2.5dB @ 1GHz

21.5dB

250mW

100 @ 5mA, 6V

50mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3-1

PH8906

MACOM Technology Solutions

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

PH1214-55EL

MACOM Technology Solutions

TRANSISTOR,BIPOLAR,55W,28V,1.20-

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 58V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 6.6dB
Power - Max: 220W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 7A
Operating Temperature: 200°C
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: -

封装: -

Request a Quote

58V

1.4GHz

-

6.6dB

220W

-

7A

200°C

Chassis Mount

2L-FLG

-

SD1309-01H

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

SD1015

Microsemi Corporation

RF TRANS NPN 18V 150MHZ M135

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 10W
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 200mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C
Mounting Type: Stud Mount
Package / Case: M135
Supplier Device Package: M135

封装: -

Request a Quote

18V

150MHz

-

10dB

10W

35 @ 200mA, 5V

1A

200°C

Stud Mount

M135

MMBT918_R1_00001

Panjit International Inc.

VHF/UHF NPN SILICON TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封装: -

库存8,802

15V

600MHz

-

225mW

20 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23