晶体管 - 双极 (BJT) - 阵列

ZDT6702TA

Diodes Incorporated

TRANS NPN/PNP DARL 60V 1.75A SM8

• Transistor Type: NPN, PNP Darlington (Dual)
• Current - Collector (Ic) (Max): 1.75A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 1.28V @ 2mA, 1.75A
• Current - Collector Cutoff (Max): 500nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 500mA, 5V / 2000 @ 500mA, 5V
• Power - Max: 2.75W
• Frequency - Transition: 140MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-223-8
• Supplier Device Package: SM8

封装: SOT-223-8

PBSS4140DPN-QX

Nexperia USA Inc.

PBSS4140DPN-Q/SOT457/SC-74

• Transistor Type: 1 NPN, 1 PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V / 300 @ 100mA, 5V
• Power - Max: 370mW
• Frequency - Transition: 150MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: 6-TSOP

封装: -

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BC847BSHE3-TP

Micro Commercial Co

DUAL NPN SMALL SIGNAL TRANSISTOR

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 150MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

封装: -